Description
Diodes Inc. PN2222A Bipolar (BJT) Transistor NPN 40V 800mA 300MHz 625mW Through Hole TO-92
BJT Transistor 600mA 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
Product Category: Bipolar Transistors – BJT
RoHS:
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 40 V
Collector- Base Voltage VCBO: 75 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 1 V
Pd – Power Dissipation: 625 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Packaging: Ammo Pack
Manufacturer:Diodes Inc.
Datasheet:Diodes/PN2222A.pdf
