Description
K6F2016U4E-EF70T Samsung Semiconductor Volatile SRAM Parallel Memory 2Mbit 128K x 16 70ns SRAM – Asynchronous 2.7V ~ 3.6V Surface Mount 48-TFBGA (6×7). The K6F2016U4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current
Memory Format: SRAM
Technology: SRAM – Asynchronous
Memory Size: 2Mbit
Memory Organization: 128K x 16
Memory Interface: Parallel
Voltage – Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Device Package: 48-TFBGA (6×7)
Package: Tape & Reel (TR)
Manufacturer Part #: K6F2016U4E-EF70T
Manufacturer: Samsung Semiconductor
Datasheet: K6F2016U4E
