Description
K6X1008C2D-TF55 Samsung Semiconductor Volatile SRAM Parallel Memory 1Mbit 128K x 8 55ns SRAM – Asynchronous 4.5V ~ 5.5V Surface Mount 32-TSOP REVERSE. The K6X1008C2D families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support verious operating temperature ranges and have various pack- age types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
Memory Format: SRAM
Technology: SRAM – Asynchronous
Memory Size: 1Mbit
Memory Organization: 128K x 8
Memory Interface: Parallel
Voltage – Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Device Package: 32-TSOP REVERSE
Package: Tray
Manufacturer Part #: K6X1008C2D-TF55
Manufacturer: Samsung Semiconductor
Datasheet: K6X1008C2D
