Description
MT58L64L32FT-10 Samsung Semiconductor Volatile SRAM Parallel Memory 2Mbit 64K x 32 10ns SRAM – Synchronous 3.3V Surface Mount 100-TQFP
FEATURES
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (VDD)
• Separate +3.3V or +2.5V isolated output buffer
supply (VDD Q)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL
WRITE
• Three chip enables for simple depth expansion and
address pipelining
• Clock-controlled and registered addresses, data
I/Os and control signals
• Internally self-timed WRITE cycle
• Burst control pin (interleaved or linear burst)
• Automatic power-down
• 100-pin TQFP package
• Low capacitive bus loading
• x18, x32, and x36 versions available
Memory Format: SRAM
Technology: SRAM – Synchronous
Memory Size: 2Mbit
Memory Organization: 64K x 32
Memory Interface: Parallel
Voltage – Supply: 3.3V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Device Package: 100-TQFP
Package: Tray
Manufacturer Part #: MT58L64L32FT-10
Manufacturer: Samsung Semiconductor
