Description
K4A4G085WE-BCRC Samsung Semiconductor Volatile DRAM Parallel Memory 4Gbit 512M x 8, 1.2V Surface Mount 78-FBGA. The K4A4G085WE-BCRC is a DDR4 SDRAM module with a capacity of 4 gigabits (Gb), organized as 256M x 16 bits. It operates at a maximum frequency of 2666MHz (DDR4-2666) and is designed to operate between -40°C to +85°C. This device uses B-die components and has a maximum voltage of 1.2V.
Brand：Samsung
Model : K4A4G085WE-BCRC
Mounting type: surface mount type
eStorage Version: DDR4
Storage capacity: 4Gbit
Package size: FBGA
Added parameter: 2023+
Product series: DRAM
Packing method: Box
Production lot number: 2022+
Output current: standard
Output voltage: standard
Memory Format: DRAM
Memory Size: 4Gbit
Memory Organization: 512M x 8
Memory Interface: Parallel
Voltage – Supply: 1.2V
Operating Temperature: 0°C ~ 95°C
Mounting Type: Surface Mount
Device Package: 78-FBGA
Package: Tape & Reel (TR)
Manufacturer Part #: K4A4G085WE-BCRC
Manufacturer: Samsung Semiconductor
