Description
K4B4G1646E-BYK000 Samsung Semiconductor Volatile DRAM Parallel Memory 4Gbit 256M x 16 1.35V Surface Mount 96-TFBGA. The Samsung DDR3L 4Gb x 8 memory module is designed to deliver high-speed performance and energy efficiency for a variety of computing applications. With a low operating voltage of 1.35V and a frequency of 933MHz, this synchronous dynamic random-access memory (SDRAM) module ensures optimal power consumption while maintaining excellent data transfer rates. Its compact FBGA-96 package makes it suitable for space-constrained environments, providing reliable performance across a wide temperature range from 0°C to 85°C.
Key Features
Low Operating Voltage 1.35V
High Frequency 933MHz
Synchronous Memory Technology DDR3L
Compact FBGA-96 Package
Wide Operating Temperature Range 0°C to 85°C
Data Bus Width 8b
Memory Format: DRAM
Technology:
Memory Size: 4Gbit
Memory Organization: 256M x 16
Memory Interface: Parallel
Voltage – Supply: 1.35V
Operating Temperature: 0°C ~ 95°C
Mounting Type: Surface Mount
Device Package: 96-TFBGA
Package: Tray
Manufacturer Part #: K4B4G1646E-BYK000
Manufacturer: Samsung Semiconductor
