Description
TIP42C JILIN SINO Transistor BIPOLAR TRANSISTOR, PNP, -100V, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-100V, Transition Frequency ft:-, Power Dissipation Pd:65W, DC Collector Current:6A, DC Current Gain hFE:75hFE, No. of Pins:3Pins RoHS
Type Designator: JCS7HN65F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ – Maximum Power Dissipation: 54.34 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Id| ⓘ – Maximum Drain Current: 7 A
Tj ⓘ – Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ – Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ – Total Gate Charge: 32 nC
tr ⓘ – Rise Time: 35 nS
Cossⓘ – Output Capacitance: 251 pF
RDSonⓘ – Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO-220MF
Datasheet:TIP42C-Jilin-Sino.pdf
