Description
AP6P250N series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
AP6P250N Advanced Power Electronics POWER MOSFET -60V -1.6A 250mohm LL SOT-23S-3P SMD RoHS^
Type Designator: AP6P250N
Marking Code: A08SS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 1.6 A
Maximum Junction Temperature (Tj): 150C
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 37 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: SOT23S
Manufacturer:Electronic Components
Datasheet:Others/AP6P250N.pdf
