Description
IPW60R041C6FKSA1 Infineon Technologies CoolMOS C6 MOSFET N-Channel 600V 77.5A 481W Through Hole PG-TO247-3 RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 77.5 A
Rds On – Drain-Source Resistance: 37 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.5 V
Qg – Gate Charge: 290 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 481 W
Channel Mode: Enhancement
Tradename: CoolMOS
Packaging: Tube
Configuration: Single
Height: 21.1 mm
Length: 16.13 mm
Series: CoolMOS C6
Transistor Type: 1 N-Channel
Width: 5.21 mm
Brand: Infineon Technologies
Fall Time: 7 ns
Product Type: MOSFET
Rise Time: 10 ns
Factory Pack Quantity: 240
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 130 ns
Typical Turn-On Delay Time: 23 ns
Part # Aliases: IPW60R041C6 SP000718886
Unit Weight: 1.340411 oz
NRND: Not recommended for new designs.
Manufacturer:Infineon Technologies
Datasheet:Infineon/IPW60R041C6-DS-v02_01-en.pdf
