Description
MJD127: 8.0 A, 100 V PNP Darlington Bipolar Power Transistor
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.
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- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
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- Straight Lead Version in Plastic Sleeves (“-1” Suffix)
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- Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)
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- Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series
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- Monolithic Construction With Built-in Base-Emitter Shunt Resistors
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- High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
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- Complementary Pairs Simplifies Designs
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- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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- PbFree Packages are Available
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Manufacturer:ON Semiconductor
Datasheet:MJD122-D.PDF
