Description
TLP591B(C,F) TOSHIBA OPTOISOLATOR 2.5KV PHVOLT 6-DIP RoHS
The TOSHIBA TLP591B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a series-connected photo-diode array in a six-lead plastic DIP package. The TLP591B is suitable for MOS FET gate drivers. The TLP591B has an internal shunt resistor to optimize switching speed.
| Specifications | |
| Manufacturer | Toshiba |
| Product Category | Photodiode Output Optocouplers |
| RoHS | Details |
| Configuration | 1 Channel |
| Maximum Forward Diode Voltage | 1.7 V |
| Maximum Reverse Diode Voltage | 3 V |
| Maximum Rise Time | 0.2 ms |
| Maximum Fall Time | 3 ms |
| Package / Case | PDIP-6 |
| Maximum Operating Temperature | + 85 C |
| Minimum Operating Temperature | – 40 C |
| Input Type | AC |
| Isolation Voltage | 2500 Vrms |
| Maximum Input Diode Current | 50 mA |
| Output Device | Photovoltaic |
| Factory Pack Quantity | 50 |
Specifications
Manufacturer: Toshiba
Product Category: Photodiode Output Optocouplers
RoHS: RoHS Compliant
Brand: Toshiba
Package / Case: PDIP-6
Output Type: Photo-Diode Array
Number of Channels: 1 Channel
Isolation Voltage: 2500 Vrms
If – Forward Current: 25 mA
Vf – Forward Voltage: 1.7 V
Vr – Reverse Voltage: 3 V
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: – 40 C
Packaging: Bulk
Fall Time: 3 ms
Rise Time: 0.2 ms
Factory Pack Quantity: 50
Manufacturer:Toshiba
Datasheet:Toshiba/TLP591B_datasheet_en_20140901.pdf
