Description
TK160F10N1L,LQ(O Toshiba Silicon N Channel MOSFET 375W U-MOSVIII-H 100V 160A 122nC Surface Mount TO-220SM(W)RoHS
Specifications
Manufacturer:Toshiba
Product Category:MOSFET
Technology:Si
Mounting Style:SMD/SMT
Package / Case:TO-220SMW-3
Transistor Polarity:N-Channel
Number of Channels:1 Channel
Vds – Drain-Source Breakdown Voltage:100 V
Id – Continuous Drain Current:160 A
Rds On – Drain-Source Resistance:2 mOhms
Vgs – Gate-Source Voltage:- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:2.5 V
Qg – Gate Charge:122 nC
Maximum Operating Temperature:+ 175 C
Pd – Power Dissipation:375 W
Channel Mode:Enhancement
Qualification:AEC-Q101
Tradename:U-MOSVIII-H
Packaging:Cut Tape
Packaging:Reel
Configuration:Single
Series:TK160F10N1L
Transistor Type:1 N-Channel
Brand:Toshiba
Fall Time:40 ns
Product Type:MOSFET
Rise Time:22 ns
Factory Pack Quantity:1000
Subcategory:MOSFETs
Typical Turn-Off Delay Time:140 ns
Typical Turn-On Delay Time:42 ns
Unit Weight:0.063493 oz
Application : DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers
Manufacturer:Toshiba
Datasheet:TK160F10N1L.pdf
