Description
SI4435DDY-T1-E3 Siliconix Vishay Semiconductors MOSFET -30V Vds 20V Vgs SO-8 8SOIC ROHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 11.4 A
Rds On – Drain-Source Resistance: 24 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 3 V
Qg – Gate Charge: 32 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 5 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Reel
Packaging: Cut Tape
Brand: Vishay Semiconductors
Product Type: MOSFET
Series: SI4
Reel:2500
Subcategory: MOSFETs
Part # Aliases: SI4435DDY-E3
Unit Weight: 0.006596 oz
