Description
TK110P10PL,RQ(S2 Toshiba Transistor MOSFET N-CH 1MHz 75W 100V 40A 3-Pin DPAK RoHS
Specifications
Manufacturer: Toshiba
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: DPAK-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 40 A
Rds On – Drain-Source Resistance: 16 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.5 V
Qg – Gate Charge: 33 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 75 W
Channel Mode: Enhancement
Tradename: U-MOSIX-H
Packaging: Reel
Packaging: Cut Tape
Brand: Toshiba
Configuration: Single
Fall Time: 9 ns
Product Type: MOSFET
Rise Time: 6 ns
Reel:2500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 43 ns
Typical Turn-On Delay Time: 20 ns
Unit Weight: 0.012699 oz
