Description
SI7172DP-T1-GE3 Vishay Semiconductors Transistor MOSFET N-CH 200V 5.9A 8-Pin PowerPAK SO T/R RoHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerPAK-SO-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 200 V
Id – Continuous Drain Current: 25 A
Rds On – Drain-Source Resistance: 70 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 77 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 96 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Reel
Packaging: Cut Tape
Brand: Vishay Semiconductors
Configuration: Single
Height: 1.04 mm
Length: 6.15 mm
Product Type: MOSFET
Series: SI7
Reel:3000
Subcategory: MOSFETs
Width: 5.15 mm
Part # Aliases: SI7172DP-GE3
Unit Weight: 0.017870 oz
Manufacturer: Vishay
MFG Part #: SI7172DP-T1-GE3
