Description
2N5550G onsemi Bipolar (BJT) Transistor NPN 140 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)
Specifications
Manufacturer: onsemi
Product Category: Bipolar Transistors – BJT
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 140 V
Collector- Base Voltage VCBO: 160 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 0.25 V
Maximum DC Collector Current: 0.6 A
Pd – Power Dissipation: 625 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: 2N5550
Packaging: Bulk
Brand: onsemi
Continuous Collector Current: 0.6 A
DC Collector/Base Gain hfe Min: 60
Height: 5.33 mm
Length: 5.2 mm
Product Type: BJTs – Bipolar Transistors
Reel: 5000
Subcategory: Transistors
Technology: Si
Width: 4.19 mm
Lifecycle:Obsolete
Manufacturer: ON Semiconductor
MFG Part #: 2N5550G
