Description
SIA445EDJ-T1-GE3 Vishay Semiconductors MOSFET P-Channel -20V Vds 12V Vgs PowerPAK SC-70 RoHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SC-70-6
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 20 V
Id – Continuous Drain Current: 12 A
Rds On – Drain-Source Resistance: 16.5 mOhms
Vgs – Gate-Source Voltage: – 12 V, + 12 V
Vgs th – Gate-Source Threshold Voltage: 1.2 V
Qg – Gate Charge: 48 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 19 W
Channel Mode: Enhancement
Tradename: TrenchFET, PowerPAK
Packaging: Reel
Packaging: Cut Tape
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 20 ns
Forward Transconductance – Min: 29 S
Product Type: MOSFET
Rise Time: 25 ns
Series: SIA
Reel:3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 55 ns
Typical Turn-On Delay Time: 25 ns
Part # Aliases: SIA445EDJ-GE3
Unit Weight: 0.001446 oz
Manufacturer: Vishay
MFG Part #: SIA445EDJ-T1-GE3
