Description
MMBT5551-7-F Diodes Incorporated Bipolar Transistors NPN 160V 600mA 300MHz 300mW Surface Mount SOT-23-3 RoHS
Specifications
Manufacturer: Diodes Incorporated
Product Category: Bipolar Transistors – BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 160 V
Collector- Base Voltage VCBO: 180 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 0.2 V
Maximum DC Collector Current: 0.6 A
Pd – Power Dissipation: 300 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: MMBT5551
Packaging: Cut Tape
Packaging: Reel
DC Current Gain hFE Max: 250
Height: 1 mm
Length: 3.05 mm
Technology: Si
Width: 1.4 mm
Brand: Diodes Incorporated
Continuous Collector Current: 0.6 A
DC Collector/Base Gain hfe Min: 80
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 0.001164 oz
Manufacturer: Diodes Inc.
MFG Part #: MMBT5551-7-F
