Description
SI4599DY-T1-GE3 Vishay Semiconductors Dual N/P-channel MOSFET Transistor,4.7 A,6.8 A,40V,8-Pin SOIC RoHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8
Transistor Polarity: N-Channel, P-Channel
Number of Channels: 2 Channel
Vds – Drain-Source Breakdown Voltage: 40 V
Id – Continuous Drain Current: 5.8 A, 6.8 A
Rds On – Drain-Source Resistance: 35.5 mOhms, 45 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1.2 V, 1.4 V
Qg – Gate Charge: 11.7 nC, 25 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 3 W, 3.1 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Cut Tape
Packaging: Reel
Configuration: Dual
Height: 1.75 mm
Length: 4.9 mm
Series: SI4
Transistor Type: 1 N-Channel, 1 P-Channel
Width: 3.9 mm
Brand: Vishay Semiconductors
Forward Transconductance – Min: 14 S, 22 S
Fall Time: 9 ns, 9 ns
Product Type: MOSFET
Rise Time: 10 ns, 12 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 15 ns, 30 ns
Typical Turn-On Delay Time: 7 ns, 7 ns
Part # Aliases: SI4599DY-GE3
Unit Weight: 0.019048 oz
Features:
Halogen-Free According to IEC 61249-2-21 Definition
TrenchFET Gen IV Power MOSFET
100% Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
Applications:
Switch Mode Power Supplies
Personal Computers and Servers
Telecom Bricks
VRMs and POL
Manufacturer: Vishay
MFG Part #: SI4599DY-T1-GE3
