Description
IRFR120NTRPBF Infineon / IR MOSFET N-Channel 100 V 9.4A 48W Surface Mount D-Pak RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 9.4 A
Rds On – Drain-Source Resistance: 210 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1.8 V
Qg – Gate Charge: 25 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 48 W
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Type: HEXFET Power MOSFET
Width: 6.22 mm
Brand: Infineon / IR
Fall Time: 23 ns
Product Type: MOSFET
Rise Time: 23 ns
Factory Pack Quantity: 2000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 32 ns
Typical Turn-On Delay Time: 4.5 ns
Unit Weight: 0.011640 oz
Manufacturer: Infineon Technologies
MFG Part #: IRFR120NTRPBF
