Description
Siliconix SI9407BDY-T1-GE3 Vishay Semiconductors Transistor MOSFET P-Channel 60V 4.7A 5W 8-Pin SOIC N T/R RoHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 4.7 A
Rds On – Drain-Source Resistance: 120 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 14.5 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 5 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Series: SI9
Transistor Type: 1 P-Channel
Brand: Vishay Semiconductors
Forward Transconductance – Min: 8.5 nS
Fall Time: 30 ns
Product Type: MOSFET
Rise Time: 70 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 35 ns, 40 ns
Typical Turn-On Delay Time: 10 ns, 30 ns
Part # Aliases: SI9407BDY-GE3
Unit Weight: 0.026455 oz
Manufacturer: Electronic Components
MFG Part #: SI9407BDY-T1-GE3
