Description
IRFB52N15DPBF, Infineon Technologies MOSFET 150V 60A 32mOhm 60nC SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE, ROHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 150 V
Id – Continuous Drain Current: 60 A
Rds On – Drain-Source Resistance: 32 mOhms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 1.8 V
Qg – Gate Charge: 60 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 320 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon / IR
Product Type: MOSFET
Factory Pack Quantity: 50
Subcategory: MOSFETs
Part # Aliases: IRFB52N15DPBF SP001572332
Unit Weight: 0.068784 oz
Manufacturer: Infineon Technologies
MFG Part #: IRFB52N15DPBF
