Description
STP10NK60Z STMicroelectronics MOSFET N-Channel 600 V 10A (Tc) 115W (Tc) Through Hole TO-220 RoHS
Specifications
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 10 A
Rds On – Drain-Source Resistance: 750 mOhms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 3 V
Qg – Gate Charge: 70 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 115 W
Channel Mode: Enhancement
Tradename: SuperMESH
Packaging: Tube
Configuration: Single
Height: 9.15 mm
Length: 10.4 mm
Series: STP10NK60Z
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.6 mm
Brand: STMicroelectronics
Forward Transconductance – Min: 7.8 S
Fall Time: 30 ns
Product Type: MOSFET
Rise Time: 20 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 55 ns
Typical Turn-On Delay Time: 20 ns
Unit Weight: 0.068784 oz
Manufacturer: STMicroelectronics
MFG Part #: STP10NK60Z
