Description
IRF1405STRLPBF Infineon Technologies ^Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK T/R RoHS
Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 55 V
Id – Continuous Drain Current: 131 A
Rds On – Drain-Source Resistance: 5.3 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 4 V
Qg – Gate Charge: 170 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 200 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Brand: Infineon / IR
Configuration: Single
Fall Time: 110 ns
Forward Transconductance – Min: 69 S
Height: 2.3 mm
Length: 6.5 mm
Product Type: MOSFET
Rise Time: 190 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 130 ns
Typical Turn-On Delay Time: 13 ns
Width: 6.22 mm
Part # Aliases: IRF1405STRLPBF SP001571200
Unit Weight: 0.011640 oz
Manufacturer: Infineon Technologies
MFG Part #: IRF1405STRLPBF
