Description
Raytheon 2N696 Bipolar Transistors – BJT NPN Transistor
This bipolar junction transistor’s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
Manufacturer Part Number: 2N696
