Description
BSZ100N06LS3G Infineon Trans MOSFET N-CH 60V 11A 8-Pin TSDSON T/R, RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PG-TSDSON-8
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 20 A
Rds On – Drain-Source Resistance: 10 mOhms
Vgs th – Gate-Source Threshold Voltage: 1.2 V
Vgs – Gate-Source Voltage: 10 V
Qg – Gate Charge: 34 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 50 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Height: 1.1 mm
Length: 3.3 mm
Series: OptiMOS 3
Transistor Type: 1 N-Channel
Width: 3.3 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 20 S
Fall Time: 8 ns
Product Type: MOSFET
Rise Time: 58 ns
Factory Pack Quantity: 5000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 8 ns
Part # Aliases: BSZ100N06LS3 BSZ1N6LS3GXT G SP000453672
Unit Weight: 0.002681 oz
Manufacturer Part Number: BSZ100N06LS3G
Infineon Technologies
