Description
CSD88539ND Texas Instruments MOSFET 60-V Dual N-Channel Power MOSFET 60V 15A 2.1W Surface Mount 8-SOIC 0.023 ohm, 10 V, 3 V
The CSD88539ND is a NexFET dual N-channel Power MOSFET designed to serve as a half bridge in low current motor control applications.
Specifications
Manufacturer: Texas Instruments
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOIC-8
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 15 A
Rds On – Drain-Source Resistance: 28 mOhms
Vgs th – Gate-Source Threshold Voltage: 2.6 V
Vgs – Gate-Source Voltage: 10 V
Qg – Gate Charge: 7.2 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 2.1 W
Configuration: Dual
Channel Mode: Enhancement
Tradename: NexFET
Packaging: Cut Tape
Packaging: Reel
Height: 1.75 mm
Length: 4.9 mm
Series: CSD88539ND
Transistor Type: 2 N-Channel Power MOSFET
Width: 3.9 mm
Brand: Texas Instruments
Fall Time: 4 ns
Product Type: MOSFET
Rise Time: 9 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 14 ns
Typical Turn-On Delay Time: 5 ns
Unit Weight: 0.019048 oz
Manufacturer Part Number: CSD88539ND
Manufacturer: Electronic Components
