Description
MT29F1G01ABAFDWB-IT:F TR Micron FLASH – NAND Memory IC 1Gb (1G x 1) SPI 8-U-PDFN
Technical Attributes
Maximum Processing Temperature 260C
Architecture Sectored
Screening Level Industrial
Timing Type Synchronous
Pin Count 8
Page Size 2 KB
Program Current 25 mA
Interface Type Serial-SPI
Supplier Package UPDFN
Package Dimensions 8 x 6 x 0.515 mm
Lead Finish Matte Tin
Density 1 Gb
Mounting Surface Mount
Typical Operating Supply Voltage 3.3 V
Number of Bits per Word 1/2/4 Bit
Command Compatible No
Cell Type SLC NAND
ECC Support Yes
Simultaneous Read/Write Support No
Block Organization Symmetrical
Maximum Erase Time 0.01/Block s
Sector Size 128Kbyte x 1024
Support of Common Flash Interface No
Support of Page Mode No
Maximum Operating Supply Voltage 3.6 V
Programming Voltage 2.7 to 3.6 V
Boot Block No
Maximum Operating Current 35 mA
Page Read Current 35 mA
Maximum Random Access Time 5|6 ns
Minimum Operating Supply Voltage 2.7 V
Operating Temperature -40 to 85C
Maximum Programming Time 0.6/Page ms
Erase Suspend/Resume Modes Support No
Number of Words 1024/512/256 MWords
Manufacturer Part Number: MT29F1G01ABAFDWB-IT
Manufacturer: Electronic Components
