Description
Infineon Technologies AG SPB20N60C3 N CHANNEL MOSFET, 650V, 20.7A, P-TO-263, Transistor Polarity:N Channel, Continuous Drain Current Id:20.7A, Drain Source Voltage Vds:650V, On Resistance Rds(on):190mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V , RoHS
Manufacturer: Infineon
Product Category: MOSFET
RoHS: RoHS Compliant Details
Brand: Infineon Technologies
Id – Continuous Drain Current: 20.7 A
Vds – Drain-Source Breakdown Voltage: 650 V
Rds On – Drain-Source Resistance: 190 mOhms
Transistor Polarity: N-Channel
Vgs – Gate-Source Breakdown Voltage: 30 V
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 208 W
Mounting Style: SMD/SMT
Package / Case: D2PAK-3
Packaging: Reel
Channel Mode: Enhancement
Configuration: Single
Fall Time: 4.5 ns
Minimum Operating Temperature: – 55 C
Rise Time: 5 ns
Series: CoolMOS C3
Factory Pack Quantity: 1000
Tradename: CoolMOS
Typical Turn-Off Delay Time: 67 ns
Typical Turn-On Delay Time: 10 ns
Part # Aliases: SP000013520 SPB20N60C3ATMA1 SPB20N60C3XT
Manufacturer Part Number: SPB20N60C3
Manufacturer: Electronic Components
