Description
INTEL – INTEL E28F320J5-120 Flash Mem Parallel 5V 32M-Bit 4M x 8/2M x 16 120ns 56-Pin TSOP
Manufacturer Part Number: E28F320J5-120
Manufacturer: Intel
Case/Package TSOP
Number of Pins 56
Access Time 120 ns
Density 32 Mb
Frequency 120 GHz
Interface Parallel
Max Operating Temperature 70 °C
Memory Size 30.5 MB
Memory Type NOR
Min Operating Temperature 0 °C
Operating Supply Voltage 5 V
Packaging Bulk
Capitalizing on two-bit-per-cell technology, Intel StrataFlash™ memory products provide 2X the bits in 1X the space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory devices are the first to bring reliable, two-bit-per-cell storage technology to the flash market. Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices, support for code and data storage, and easy migration to future devices. Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash memory devices take advantage of 400 million units of manufacturing experience since 1988. As a result, Intel StrataFlash components are ideal for code or data applications where high density and low cost are required. Examples include networking, telecommunications, audio recording, and digital imaging. By applying FlashFile™ memory family pinouts, Intel StrataFlash memory components allow easy design migrations from existing 28F016SA/SV, 28F032SA, and Word-Wide FlashFile memory devices (28F160S5 and 28F320S5). Intel StrataFlash memory components deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and the Scaleable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices. Manufactured on Intel’s 0.4 micron ETOX™ V process technology, Intel StrataFlash memory provides the highest levels of quality and reliability
