MMUN2211LT1G ON Semiconductor Transistor Digital BJT NPN 50V 100mA 3-Pin SOT-23

ON Semiconductor MMUN2211LT1G Pre-Biased Bipolar Transistor (BJT) NPN – Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Description

MMUN2211LT1G – ON Semiconductor Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R RoHS

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features
   
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Specifications
Product Category: Bipolar Transistors – Pre-Biased
Manufacturer: ON Semiconductor
RoHS: RoHS Compliant
Configuration: Single
Transistor Polarity: NPN
Typical Input Resistor: 10 kOhms
Typical Resistor Ratio: 1
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
DC Collector/Base Gain hfe Min: 35, 60
Collector- Emitter Voltage VCEO Max: 50 V
Continuous Collector Current: 0.1 A
Peak DC Collector Current: 100 mA
Pd – Power Dissipation: 246 mW
Maximum Operating Temperature: + 150 C
Series: MMUN2211L
Packaging: Reel
Brand: ON Semiconductor
DC Current Gain hFE Max: 35
Height: 0.94 mm
Length: 2.9 mm
Minimum Operating Temperature: – 55 C
Factory Pack Quantity: 3000
Width: 1.3 mm
Unit Weight: 0.050717 oz
Manufacturer Part Number: MMUN2211LT1G
Manufacturer: ON Semiconductor

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