Description
Samsung IRFR9010 Transistor MOSFET P-CH 50V 5.3A 3-Pin(2+Tab) DPAK
Mounting Style: SMD/SMT
Package / Case: DPAK-3
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds – Drain-Source Breakdown Voltage: – 50 V
Id – Continuous Drain Current: 5.3 A
Rds On – Drain-Source Resistance: 500 mOhms
Vgs – Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 35 ns
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 25 W
Rise Time: 47 ns
Factory Pack Quantity: 50
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 13 ns
Typical Turn-On Delay Time: 6.1 ns
Manufacturer Part Number: IRFR9010-SAM
Manufacturer: Samsung
