Description
Samsung Semiconductor K4B1G0846G-BCH9000 DRAM Chip DDR3 SDRAM 1G-Bit 128Mx8 1.5V 78-Pin FBGA – Trays
The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3- 1866) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset .
Manufacturer Part Number: K4B1G0846G-BCH9
Manufacturer: Samsung
