UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC/DC converters, and traction drives, as well as telecom/server power supplies, variable-speed motor drives, and solar photovoltaic (PV) inverters.
United Silicon Carbide’s product portfolio now spans more than 80 SiC FETs, JFETs and Schottky diode devices. Based on a unique cascode configuration, the recently announced Generation 4 SiC FETs are specified at an industry-leading 750V at 5.9 milliohm RDS(on), enabling new levels of SiC efficiency and performance critical for EV chargers, DC-DC converters and traction drives, as well as telecom/server power supplies, variable speed motor drives and solar photovoltaic (PV) inverters.
Greensboro, NC, November, 2021 – Qorvo (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, announced that it has acquired United Silicon Carbide (UnitedSiC), a leading manufacturer of silicon carbide (SiC) power semiconductors. The acquisition of United Silicon Carbide expands Qorvo’s reach into the fast-growing markets for electric vehicles (EVs), industrial power, circuit protection, renewables and data center power. United Silicon Carbide will become part of Qorvo’s Infrastructure & Defense Products (IDP) business and will be led by Dr. Chris Dries, who was formerly United Silicon Carbide’s president and CEO and is now general manager of Qorvo’s Power Device Solutions.
