Military Components > Celeritek
Military Components > Celeritek
Designer and manufacturer of defense equipment. The company’s products mainly include noise amplifiers, aerospace defense system, core transmit and receive functions. Celeritek specialized in developing GaAs-based semiconductor components, including RFICs, low noise amplifiers, gain blocks, and power amplifier modules for defense applications. These products were used in electronic warfare, radar, and military systems.
Celeritek, Inc. (NASDAQ: CLTK) was a manufacturer of GaAs semiconductor components and subsystems for the wireless communications market. The company acquired Tavanza, a fabless designer of power amplifier modules and components for cellular and wireless LAN products. Tavanza’s technology positioned Celeritek to better meet the growing demand for high-performance, power-efficient, and cost-effective amplifiers for handsets and WLAN products. Tavanza had already sampled CDMA power amplifiers to several Korean cell phone manufacturers, and Celeritek opened an office in Korea to support this market. Tavanza’s chip designs were expected to contribute to Celeritek’s revenue by the second half of fiscal 2004, while its cost-effective packaging techniques would help Celeritek become a low-cost producer of power amplifier modules. Additionally, Tavanza’s CMOS design expertise would support Celeritek’s 802.11a WLAN product development, particularly in creating integrated multi-band 802.11 a/b/g front-end modules.
In 2004, Teledyne Technologies, through its subsidiary Teledyne Wireless, acquired Celeritek’s defense electronics division, which included its GaAs-based RF and microwave devices and subassemblies. Following this, Celeritek’s remaining GaAs component business was acquired by Mimix Broadband in 2005, marking the company’s complete liquidation. Mimix, founded in 2000, supplied high-performance MMICs for microwave and millimeter-wave wireless applications. In 2010, Mimix was itself acquired by MACOM.
Celeritek’s product range included buffer amplifiers, distributed amplifiers, low noise amplifiers, GaAs FETs, power amplifiers, receivers, transmitters, and various microwave components. The GaAs component operation that Celeritek includes a portfolio of products such as low-noise amplifiers, gain blocks and power amplifier (PA) modules for both commercial and defense applications.
Mimix was acquired by MACOM. MACOM designs and manufactures semiconductor products for Datacenter, Telecommunication and Industrial and Defense applications. Headquartered in Lowell, Massachusetts, MACOM has design centers and sales offices throughout North America, Europe and Asia. MACOM is certified to the ISO9001 international quality standard and ISO14001 environmental management standard.
About MACOM
M/A-COM Technology Solutions (www.macomtech.com) is a leading provider of high-performance RF, microwave, and millimeter-wave products, supporting next-generation Internet and modern battlefield applications. With a broad portfolio of technologies, MACOM serves a wide range of markets, including CATV, wireless and optical communications infrastructure, satellite, radar, automotive, industrial, medical, and mobile devices. A cornerstone of the RF and microwave industry for over 60 years, MACOM is known for solving complex challenges for its customers.
Headquartered in Lowell, Massachusetts, MACOM is certified to ISO9001 for quality management and ISO14001 for environmental management. The company has design centers and sales offices across North America, Europe, Asia, and Australia.
MACOM, M/A-COM and related logos are trademarks of MACOM, with all other trademarks belonging to their respective owners.
MACOM’s Semiconductor offers a comprehensive portfolio of MMIC products fabricated on high performance gallium nitride-on-silicon (GaN-on-Si) and gallium arsenide (GaAs) processes. These technologies allow the delivery of MMIC solutions covering DC to 110GHz. The portfolio of products below are offered as bare die, tabbed and packaged MMIC solutions.
The power amplifier (PA) portfolio is designed and optimized for use in telecommunications, instrumentation, radar, satcom and A&D applications. Our PAs are fabricated using captive short gate length GaAs and GaN-on-Si technology that allows MACOM to deliver differentiated amplifier performance.
| Product | Freq. Min (GHz) | Freq. Max (GHz) | Gain (dB) | (dBm) | PAE (%) | BIAS Currant (A) | Drain Voltage (V) | Package | Board | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2135UH/C1 | 18 | 23 | 25 | 33 | 20.2 | 1.2 | 4 | Die | Yes | D01PH |
|
MAAP-011410-DIE |
27 |
31 |
22 |
40.5 |
22 |
0.93 |
|
Die |
Yes |
D01GH |
|
MAAP-011413-DIE |
32 |
38 |
20 |
40 |
28 |
0.7 |
|
Die |
Yes |
D01GH |
|
MAAP-011422-DIE |
6 |
18 |
20 |
40.5 |
33 |
1.0 |
|
Die |
Yes |
D01GH |
The LNA portfolio is manufactured using pHEMT and mHEMT technologies (ED02AH, D01PH(S), D01MH). MACOM mHEMT LNAs deliver superior noise figure performance up to 110GHz. LNAs fabricated on GaN-on-Si technology are also offered. The higher breakdown voltage and low noise performance makes GaN-on-Si an ideal technology for developing higher power LNAs. GaN-on-Si LNAs have demonstrated survivability with high input power and fast recovery.
| PRODUCT | Freq. Min (GHz) | Freq. Max (GHz) | GAIN (dB) | NF (dB) | OP1dB (dBm) | BIAS Current (mA) | BIAS Voltage (V) | Package | Board | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2106XHV | 0.1 | 3 | 19 | 0.45 | 35 | 100 | 5 | QFN 4×4 | D01PH | |
| CGY2105XHV | 0.5 | 4 | 19 | 0.42 | 35 | 100 | 5 | QFN 4×4 | D01PH | |
| CGY2107HV | 0.5 | 6 | 24 | 0.5 | 36 | 100 | 5 | QFN 4×4 | ED02AH | |
| CGY2108GS | 0.5 | 6 | 21 | 0.6 | 36 | 100 | 5 | Hermetic Glass Seal | Yes | ED02AH |
| CGY2108HV | 0.5 | 6 | 22 | 0.5 | 36 | 100 | 5 | QFN 4×4 | D01PH | |
| CGY2220UH/C1 | 1 | 12 | 35 | 1.3 | 12 | 52 | 1.5 | Die | D007IH | |
| CGY2230UH/C1 | 1 | 18 | 35 | 1.5 | 12 | 50 | 1.5 | Die | D007IH | |
| CGY2178UH/C1 | 5 | 6 | 30 | 1 | 15 | 40 | 3 | Die | ED02AH | |
| CGY2120XUH/C1 | 5 | 7 | 13 | 0.5 | 12 | 50 | 1 | Die | ||
| CGY2290SUH/C1 | 6 | 18 | 9 | 3.3 | 13 | 33 | 5 | Die | ED02AH | |
| CGY2221HV/C1 | 7.5 | 13 | 16 | 1.6 | 17 | 82 | 5 | QFN 4×4 | D01PH | |
| CGY2124UH/C1 | 8 | 12 | 33 | 1.1 | 11 | 55 | 5 | Die | Yes | D01PH |
| CGY2221UH/C1 | 8 | 12 | 16 | 1.6 | 17 | 82 | 5 | Die | D01PH | |
| CGY2232UH/C1 | 12 | 15 | 27 | 1.3 | 0 | 50 | 3 | Die | ||
| CGY2125AUH/C1 | 13 | 15 | 25 | 1 | 8 | 20 | 3.3 | Die | D01MH | |
| CGY2121XUH/C2 | 18 | 26 | 19 | 1.5 | 5 | 60 | 0.8 | Die | Yes | D007IH |
| CGY2128UH/C2 | 24 | 34 | 24 | 1.3 | 11 | 47 | 3.5 | Die | D01MH | |
| CGY2260UH/C1 | 25 | 43 | 25.5 | 1.7 | 6 | 50 | 1.5 | Die | Yes | D007IH |
| CGY2122XUH/C2 | 25 | 43 | 32 | 1.5 | 1 | 30 | 1.1 | Die | Yes | D007IH |
| CGY2272UH | 44 | 70 | 25 | 2 | 5 | 40 | 1.1 | Die | Yes | D007IH |
| CGY2190UH/C2 | 75 | 110 | 23 | 2.8 | 1 | 33 | 1 | Die | D007IH | |
|
MAAL-011250-DIE |
8 |
12 |
20 |
1.4 |
15 |
150 |
8 |
Die |
Yes |
D01GH |
|
MAAL-011251-DIE |
24 |
34 |
18 |
1.6 |
5 |
50 |
8 |
Die |
Yes |
D01GH |
The wideband amplifier portfolio is manufactured using 130 nm gate length GaAs pHEMT technology D01PH(S) or 100 nm GaN HEMT technology D01GH. These products are designed for test and measurement, A&D, and optical communications applications.
| PRODUCT | Freq. Min (GHz) | Freq. Max (GHz) | Gain (dB) | NF (dB) | P1dB OUT (dBm) | Supply Current (A) | Supply Voltage (V) | Package | Process |
|---|---|---|---|---|---|---|---|---|---|
| CGY2141UH/C1 | 0.01 | 46 | 16 | 4 | 21 | 195 | 5 | Die | D01PH |
| CGY2144UH/C2 | 0.01 | 54 | 13 | 2.5 | 15 | 100 | 5 | Die | D01PH |
| CGY2145UH/C1 | 0.5 | 45 | 13 | 2.6 | 18 | 85 | 5 | Die | D01PH |
| CGY2160UH/C1 | 1.5 | 47 | 15 | 2.5 | 19 | 103 | 5 | Die | D01PH |
The gain block amplifiers portfolio is designed for industrial, wireless infrastructure and A&D applications. These gain block amplifiers are manufactured using GaAs technology (D01PH(S)).
| PRODUCT | Freq. Min (GHz) | Freq. Max (GHz) | Gain (dB) | NF (dB) | Psat (dBm) | Package | Process |
|---|---|---|---|---|---|---|---|
| CGY2731UH/C1 | 12 | 15 | 19 | 4 | 10 | Die | D01PH |
Core chips integrate digital phase shifter, digital attenuator, LNAs, MPAs and switches for phased array antenna applications. Phase and gain are controlled through a serial to parallel interface on the die (SIPO).
| Product | Access | Freq. Min (GHz) | Freq. Max (GHz) | Interface | BITS | RMS | Attentuation / Phase Range | Package | Board | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2175AHV/C1 | 3 ports | 4.5 | 6.5 | CMOS, Serial | 6 | 0.5 dB / 2° | 31.5 dB / 360° | QFN 7×7 | Yes | ED02AH |
| CGY2175AUH/C1 | 3 ports | 4.5 | 6.5 | CMOS, Serial | 6 | 0.2 dB / 1.3° | 31.5 dB / 360° | Die | Yes | ED02AH |
| CGY2170YHV/C1 | 3 ports | 8 | 12 | CMOS, Serial | 6 | 0.5 dB / 4° | 31.5 dB / 360° | QFN 7×7 | Yes | ED02AH |
| CGY2170YUH/C1 | 3 ports | 8 | 12 | CMOS, Serial | 6 | 0.4 dB / 3° | 31.5 dB / 360° | Die | Yes | ED02AH |
| CGY2330UH/C1 | 2 Ports | 12 | 15 | Serial | 6 | 0.5 dB / 11.25° | 15 dB / 348.8° | Die | ED02AH | |
| CGY2351UH/C1 | 2 Ports | 26.5 | 30.5 | Serial | 6 | 0.5 dB / 4° | 22 dB / 360° | Die | ED02AH | |
| CGY2350UH/C1 | 2 Ports | 34 | 36 | Serial | 5 | 0.5 dB / 5° | 15 dB / 348.8° | Die | Yes | ED02AH |
| PRODUCT | Function | Freq. Min (GHz) | Freq. Max (GHz) | Gain (dB) | NF (dB) | OP1dB (dBm) | BITS | Phase Error RMS (°) | Package | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2179HV/C1 | 4 bits PS+LNA | 10.7 | 12.75 | 12 | 2 | 3 | 4 | 7 | QFN | ED02AH |
| CGY2179UH/C1 | 4 bit PS+LNA | 10.7 | 12.75 | 12 | 2 | 3 | 4 | 7 | Die | ED02AH |
True time delay functions, with 1-bit and 5-bit control, operating from 6 to 18 GHz and with delays from 10ps to 330 ps are also offered in the portfolio.
| PRODUCT | Freq. Min (GHz) | Freq. Max (GHz) | BITS | Min Delay (ps) | Full Delay (ps) | Isertion Loss (dB) | CTRL Interface (V) | Package | Board | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2393SUH/C1 | 6 | 18 | 5 | 10 | 310 | 6 | 0 / +4 | Die | Yes | ED02AH |
| CGY2394SUH/C1 | 6 | 18 | 1 | 330 | 330 | 6 | 0 / +4 | Die | Yes | ED02AH |
Digital phase shifters from 4.8 GHz to 18 GHz manufactured using the ED02AH GaAs pHEMT process are also offered. Phase shifters are designed for communications, and A&D applications.
| Product | Freq. Min (GHz) | Freq. Max (GHz) | Phase Control (°) | Insertion Loss (dB) | IP1dB (dBm) | BITS | Phase Error RMS (°) | Interface | Package | Board | Process |
|---|---|---|---|---|---|---|---|---|---|---|---|
| CGY2177AUH/C1 | 4.8 | 6.8 | 360 | 5 | 20 | 6 | 2 | 0 / +5 V | Die | ED02AH | |
| CGY2173UH/C2 | 6 | 18 | 360 | 13 | 27 | 6 | 4 | 0 / -3 V | Die | Yes | ED02AH |
| CGY2392SHV/C1 | 6 | 18 | 360 | 10.8 | 20 | 6 | 1.09 | 0 / +5 V | QFN 5×5 | ED02AH | |
| CGY2392SUH/C1 | 6 | 18 | 360 | 10.8 | 20 | 6 | 1.7 | 0 / +5 V | Die | Yes | ED02AH |
| CGY2172XAUH/C1 | 8 | 12 | 360 | 8 | 18 | 6 | 2 | 0 / -3 V | Die | Yes | ED02AH |
| CGY2172XBUH/C1 | 8 | 12 | 360 | 8 | 18 | 6 | 3 | 0 / +5 V | Die | ED02AH | |
| CGY2174UH/C1 | 14 | 16 | 360 | 8 | 20 | 6 | 6 | 0 / -3 V | Die | ED02AH |
Attenuators from 1 to 18 GHz manufactured using the ED02AH GaAs pHEMT process are also offered.
| Product | Freq. Min (GHz) | Freq. Max (GHz) | Amplitude Control (dB) | Insertion Loss (dB) | IP1dB (dBm) | BITS | RMS Atten. (dB) | CTRL Interface (V) | Package | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2171XBUH/C1 | 1 | 15 | 31.5 | 5 | 20 | 6 | 0.25 | 0 / +3 V | Die | ED02AH |
| CGY2176AUH/C1 | 1 | 8 | 31.5 | 5.6 | – | 6 | 0.2 | 0 / +5 V | Die | ED02AH |
| CGY2390SUH/C1 | 6 | 18 | 35 | 2.2 | – | 3 | 0.2 | 0 / +5 V | Die | ED02AH |
| CGY2169UH/C1 | 10 | 18 | 23.5 | 4 | 20 | 6 | 0.4 | 0 / -3 V | Die | ED02AH |
Switches include discrete components from single-pole-single-throw (SPST) to single-pole-dual-throw (SPDT). These switch products showcase high isolation, low loss and large power handling. They are designed using GaAs or GaN HEMT technologies.
| Product | Freq. Min (GHz) | Freq. Max (GHz) | Isolation(dB) | Insertion Loss (dB) | Switching Speed (ns) | Package | Process |
|---|---|---|---|---|---|---|---|
| CGY2890SUH/C1 | 6 | 18 | > 50 | 1.5 | Die | ED02AH |
Wideband mixers that are manufactured using GaAs 180 nm E/D pHEMT (ED02AH) and 70 nm mHEMT (D007IH) technologies are also offered. These wideband mixers feature high isolation and are designed for radar, telecommunications and instrumentation applications.
| Product | Converter | Freq. Min (GHz) | Freq. Max (GHz) | LO Freq (GHz) | IF Freq (GHz) | LO Input Power (dBm) | Conv. Gain (dB) | OP1dB (dBm) | Package | Process |
|---|---|---|---|---|---|---|---|---|---|---|
| CGY2183UH/C1 | Active Down | 0.1 | 6 | 0.1 – 6 | DC – 3 | -5 | 11 | -5 | Die | ED02AH |
| CGY2184UH/C1 | Active Down | 0.1 | 6 | 0.1 – 6 | DC – 3 | 0 | 18 | 3 | Die | ED02AH |
| CGY2180UH/C1 | Up & Down | 0.7 | 3.7 | 0.7 – 4 | DC – 2 | 12 | -7 | 5 | Die | ED02AH |
| CGY2181UH/C1 | Up & Down | 1 | 4.5 | 1 – 5 | DC – 2 | 15 | -7 | 6 | Die | ED02AH |
| CGY2182UH/C1 | Up & Down | 3 | 10 | 3 – 10 | DC – 3 | 15 | -7 | 5 | Die | ED02AH |
The portfolio includes transimpedance amplifiers (TIAs) supporting data rates up to 43 Gb/s for optical fiber communications applications.
| PRODUCT | Function | DATA RATE (Gb/s) | DIFF GAIN (dBΩ) | INPUT OVER-LOAD (mApp) | ON CHIP AGC | CURRENT (mA) | POWER SUPPLY (V) | Package | Board | Status | Process |
|---|---|---|---|---|---|---|---|---|---|---|---|
| CGY2110UH/C1/S2 | Differential Output TIA | 10 | 72 | 2 | Yes | 70 | 5 | Die | Prod | ED02AH | |
| CGY2116UH/C1 | Differential Output TIA | 10.7 | 74 | 2.5 | Yes | 83 | 5 | Die | Prod | ED02AH | |
| CGY2144UH/C2 | TIA | 43 | 49 | 3.5 | No | 100 | 5 | Die | Prod | D01PH |