background image

Bulletin No

T07 EB0

(Mar.,2001)

Allegro_Power_Transistor_array_MOSFET_array-html.html
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The information in this publication has been carefully checked and is believed to be accurate;
however, no responsibility is assumed for inaccuracies.

Sanken reserves the right to make changes without further notice to any products herein in the
interest of improvements in the performance, reliability, or manufacturability of its products.
Before placing an order, Sanken advises its customers to obtain the latest version of the relevant
information to verify that the information being relied upon is current.

Application and operation examples described in this catalog are quoted for the sole purpose of
reference for the use of the products herein and Sanken can assume no responsibility for any
infringement of industrial property rights, intellectual property rights or any other rights of Sanken
or any third party which may result from its use.

When using the products herein, the applicability and suitability of such products for the intended
purpose or object shall be reviewed at the users’ responsibility.

Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence
of failure and defect of semiconductor products at a certain rate is inevitable.  Users of Sanken
products are requested to take, at their own risk, preventative measures including safety design
of the equipment or systems against any possible injury, death, fires or damages to the society
due to device failure or malfunction.

Sanken products listed in this catalog are designed and intended for the use as components in
general purpose electronic equipment or apparatus (home appliances, office equipment, tel-
ecommunication equipment, measuring equipment, etc.).  Before placing an order, the user’s
written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability is
required (transportation equipment and its control systems, traffic signal control systems or
equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest
Sanken sales representative to discuss and obtain written confirmation of your specifications.
The use of Sanken products without the written consent of Sanken in the applications where
extremely high reliability is required (aerospace equipment, nuclear power control systems, life
support systems, etc.) is strictly prohibited.

Anti radioactive ray design is not considered for the products listed herein.

This publication shall not be reproduced in whole or in part without prior written approval from
Sanken.

Ordering

    Specify the number of standard minimum packaged units when placing an order.

Cardboard Box

Stick

Reel

SLA

50

108

SMA

120

108

STA300

100

STA400

80

STA500

110

SDK

1200

Standard minimum packaged unit

Series

Package Type

     CAUTION / WARNING

Allegro_Power_Transistor_array_MOSFET_array-html.html
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1

Product index by Part Number .................................................... 2

Product index by function (Sink Driver) ......................................... 4

Product index by function (Source Driver)...................................... 6

Product index by function (Motor Driver) ....................................... 8

Product index by applications .................................................. 10

Storage, characteristic inspection, and handling precautions ........... 13

Avalanche energy capability of MOSFET array .............................. 14

Transistor array with built-in avalanche diode .............................. 16

Switching time measurement .................................................. 16

External dimensions ............................................................. 17

SLA packages ..................................................................... 18

SMA packages ................................................................... 122

STA packages .................................................................... 152

SD packages (surface mount) ................................................. 191

Contents

Allegro_Power_Transistor_array_MOSFET_array-html.html
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2

Part Number

Classification

Number of chips V

CEO

 • V

DSS

 (V) I

C

 • I

D

 (A)

h

FE 

(min)

R

DS (ON)

 max (

)

Package

Page

SDA01

Source driver

4

–60

–1.5

2000

SMD 16-pin

191

SDA05

3–phase motor driver

3

–60

–4

2000

SMD 16-pin

192

SDC01

Sink driver

4

50

2

1000

SMD 16-pin

193

SDC03

Sink driver

4

60

±

10

1.5

2000

SMD 16-pin

194

SDC04

Sink driver

4

100

±

15

1.5

2000

SMD 16-pin

195

SDC06

Sink driver

4

30 to 45

2

400

SMD 16-pin

196

SDC07

3–phase motor driver

3

60

4

2000

SMD 16-pin

197

SDH02

Sink driver

4

100

1.5

2000

SMD 16-pin

198

SDH03

H–bridge driver

4

+100/–60

±

1.5

2000

SMD 16-pin

200

SDK02

Sink driver

4

60

2

0.24 SMD 16-pin

202

SDK04

Sink driver

4

100

2

0.8 SMD 16-pin

203

SLA4010

Sink driver

4

60

±

10

4

2000

SIP 12-pin with fin

18

SLA4030

Sink driver

4

100

4

2000

SIP 12-pin with fin

19

SLA4031

Sink driver

4

120

4

2000

SIP 12-pin with fin

20

SLA4041

Sink driver

4

200

3

1000

SIP 12-pin with fin

21

SLA4060

Sink driver

4

120

5

2000

SIP 12-pin with fin

22

SLA4061

Sink driver

4

120

5

2000

SIP 12-pin with fin

23

SLA4070

Source driver

4

–100

–5

1000

SIP 12-pin with fin

24

SLA4071

Source driver

4

–100

–5

2000

SIP 12-pin with fin

25

SLA4310

H–bridge driver

4

±

60

±

4

80

SIP 12-pin with fin

26

SLA4340

H–bridge driver

4

±

60

±

4

2000

SIP 12-pin with fin

28

SLA4390

H–bridge driver

4

±

100

±

5

2000

SIP 12-pin with fin

30

SLA4391

H–bridge driver

4

±

100

±

5

1000

SIP 12-pin with fin

32

SLA5001

Sink driver

4

100

5

0.3 SIP 12-pin with fin

34

SLA5002

Sink driver

4

100

5

0.3 SIP 12-pin with fin

35

SLA5003

Sink driver

4

200

5

0.9 SIP 12-pin with fin

36

SLA5004

Source driver

4

–60

–5

0.3 SIP 12-pin with fin

37

SLA5005

Source driver

4

–100

–5

0.7 SIP 12-pin with fin

38

SLA5006

Source driver

4

–100

–5

0.7 SIP 12-pin with fin

39

SLA5007

H–bridge driver

4

±

60

+5/–4

0.22/0.55 SIP 12-pin with fin

40

SLA5008

H–bridge driver

4

±

100

+4/–3

0.6/1.3 SIP 12-pin with fin

42

SLA5009

3–phase motor driver

6

±

60

+5/–4

0.22/0.55 SIP 12-pin with fin

44

SLA5010

3–phase motor driver

6

±

100

+4/–3

0.6/1.3 SIP 12-pin with fin

46

SLA5011

Sink driver

5

60

5

0.22 SIP 12-pin with fin

48

SLA5012

Source driver

5

–60

–5

0.3 SIP 12-pin with fin

49

SLA5013

H–bridge driver

4

±

100

±

5

0.3/0.7 SIP 12-pin with fin

50

SLA5015

Source driver

5

–60

–4

0.55 SIP 12-pin with fin

52

SLA5017

3–phase motor driver

6

±

60

+5/–4

0.22/0.55 SIP 12-pin with fin

54

SLA5018

H–bridge driver

4

±

60

+5/–4

0.22/0.55 SIP 12-pin with fin

56

SLA5021

Sink driver

5

100

5

0.19 SIP 12-pin with fin

58

SLA5022

3–phase motor driver

6

±

60

±

6

2000

0.22 SIP 12-pin with fin

60

SLA5023

3–phase motor driver

6

±

100

±

6

2000

0.55 SIP 12-pin with fin

62

SLA5024

Source driver

4

–60

–4

0.55 SIP 12-pin with fin

64

SLA5029

Sink driver

5

60

4

0.45 SIP 12-pin with fin

65

SLA5031

Sink driver

4

60

5

0.3 SIP 12-pin with fin

66

SLA5037

Sink driver

4

100

10

0.08 SIP 12-pin with fin

67

SLA5040

Sink driver

4

100

4

0.6 SIP 12-pin with fin

68

SLA5041

Sink driver

4

200

10

0.175 SIP 12-pin with fin

69

SLA5042

Sink driver

5

100

5

0.185 SIP 12-pin with fin

70

SLA5044

Sink driver

4

250

10

0.25 SIP 12-pin with fin

71

SLA5046

Sink driver

5

200

7

0.35 SIP 12-pin with fin

72

SLA5047

Sink driver

4

150

10

0.085 SIP 12-pin with fin

73

SLA5049

Sink driver

5

250

7

0.5 SIP 12-pin with fin

74

SLA5052

Sink driver

4

150

10

0.115 SIP 12-pin with fin

75

SLA5054

Sink driver

6

150

±

7/

±

5/

±

7

0.105/0.44/0.2 SIP 15-pin with fin

76

SLA5055

Sink driver

5

150

±

5/

±

7

0.44/0.2 SIP 12-pin with fin

78

SLA5057

Sink driver

6

200

±

7/

±

7

0.175/0.35 SIP 15-pin with fin

80

SLA5058

Sink driver

5

150

±

7

0.2 SIP 12-pin with fin

81

SLA5059

3–phase motor driver

6

60

±

4

0.55 SIP 12-pin with fin

82

SLA5060

3–phase motor driver

6

60

±

6

0.22 SIP 12-pin with fin

84

SLA5061

3–phase motor driver

6

60

±

10

0.14 SIP 12-pin with fin

86

SLA5064

3–phase motor driver

6

60

±

10

0.14 SIP 12-pin with fin

88

SLA5065

5–phase motor driver

4

60

7

0.1 SIP 15-pin with fin

90

SLA5068

5–phase motor driver

6

60

7

0.1 SIP 15-pin with fin

91

SLA5070

Sink driver

6

150

±

7/

±

7

0.105/0.2 SIP 15-pin with fin

92

SLA5072

3–phase motor driver

6

250

7

0.5 SIP 15-pin with fin

94

SLA5073

5–phase motor driver

6

60

5

0.3 SIP 15-pin with fin

95

SLA5074

5–phase motor driver

4

60

5

0.3 SIP 15-pin with fin

96

SLA5075

3–phase motor driver

6

500

±

5

1.4 SIP 15-pin with fin

97

SLA5077

Sink driver

4

150

±

10

0.2 SIP 12-pin with fin

98

SLA5079

3–phase motor driver

3

–60

–10

0.14 SIP 12-pin with fin

99

Product  index  by  Part  Number

Allegro_Power_Transistor_array_MOSFET_array-html.html
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3

Part Number

Classification

Number of chips V

CEO

 • V

DSS

 (V) I

C

 • I

D

 (A)

h

FE 

(min)

R

DS (ON)

 max (

)

Package

Page

SLA5080

3–phase motor driver

3

60

10

0.14 SIP 12-pin with fin

100

SLA5081

Sink driver

5

150

±

7/

±

7

0.105/0.2 SIP 15-pin with fin

102

SLA5085

Sink driver

5

60

5

0.22 SIP 12-pin with fin

104

SLA5086

Source driver

5

–60

–5

0.22 SIP 12-pin with fin

105

SLA5088

Sink driver

5

150

±

5/

±

7

0.44/0.2 SIP 15-pin with fin

106

SLA6012

3–phase motor driver

6

±

60

±

4

2000

SIP 12-pin with fin

108

SLA6020

3–phase motor driver

6

±

100

±

5

2000

SIP 12-pin with fin

110

SLA6022

3–phase motor driver

6

±

80

±

5

2000

SIP 12-pin with fin

112

SLA6023

3–phase motor driver

6

±

60

±

6

2000

SIP 12-pin with fin

114

SLA6024

3–phase motor driver

6

±

60

±

8

2000

SIP 12-pin with fin

116

SLA6026

3–phase motor driver

6

±

60

±

10

2000

SIP 12-pin with fin

118

SLA8001

H–bridge

4

±

60

±

12

50

SIP 12-pin with fin

120

SMA4020

Source driver

4

–60

–4

2000

SIP 12-pin

122

SMA4021

Source driver

4

–60

–3

2000

SIP 12-pin

123

SMA4030

Sink driver

4

100

3

2000

SIP 12-pin

124

SMA4032

Sink driver

4

100

3

2000

SIP 12-pin

125

SMA4033

Sink driver

4

100

2

2000

SIP 12-pin

126

SMA5101

Sink driver

4

100

4

0.6 SIP 12-pin

127

SMA5102

Sink driver

4

100

4

0.6 SIP 12-pin

128

SMA5103

H–bridge driver

4

±

60

+5/–4

0.22/0.55 SIP 12-pin

130

SMA5104

3–phase motor driver

6

±

60

+5/–4

0.22/0.55 SIP 12-pin

132

SMA5105

Sink driver

4

100

5

0.3 SIP 12-pin

134

SMA5106

Sink driver

4

100

4

0.55 SIP 12-pin

135

SMA5112

3–phase motor driver

6

250

7

0.5 SIP 12-pin

136

SMA5114

Sink driver

4

60

3

0.25 SIP 12-pin

137

SMA5117

3–phase motor driver

6

250

7

0.25 SIP 12-pin

138

SMA5118

3–phase motor driver

6

500

±

5

1.4 SIP 12-pin

139

SMA5125

3–phase motor driver

6

±

60

±

10

0.14 SIP 12-pin

140

SMA5127

3–phase motor driver

6

±

60

±

4

0.55 SIP 12-pin

142

SMA6010

3–phase motor driver

6

±

60

±

4

2000

SIP 12-pin

144

SMA6014

3–phase motor driver

6

±

60

±

2 1500/2000

SIP 12-pin

146

SMA6511

Stepper motor driverr with

5

100

±

15/–60

1.5/–3

2000

SIP 12-pin

148

Dual Supply Voltage Switch

SMA6512

Stepper motor driverr with

5

60

±

10/–60

1.5/–3

2000

SIP 12-pin

150

Dual Supply Voltage Switch

STA301A

Sink driver

3

60

±

10

4

1000

SIP 8-pin

152

STA302A

Source driver

3

–50

–4

1000

SIP 8-pin

153

STA302A

3–phase motor driver

3

–50

–4

1000

SIP 8-pin

153

STA303A

Sink driver

3

100

4

1000

SIP 8-pin

154

STA303A

3–phase motor driver

3

100

4

1000

SIP 8-pin

154

STA304A

3–phase motor driver

3

550

1

200

SIP 8-pin

155

STA305A

3–phase motor driver

3

–550

–1

200

SIP 8-pin

156

STA308A

Source driver

3

–120

–4

2000

SIP 8-pin

157

STA312A

Sink driver

3

60

3

300

SIP 8-pin

158

STA322A

Source driver

3

–50

–3

100

SIP 8-pin

159

STA371A

Sink driver

3

60

±

10

2

2000

SIP 8-pin

160

STA401A

Sink driver

4

60

±

10

4

1000

SIP 10-pin

161

STA402A

Source driver

4

–50

–4

1000

SIP 10-pin

162

STA403A

Sink driver

4

100

4

1000

SIP 10-pin

163

STA404A

Sink driver

4

200

3

1000

SIP 10-pin

164

STA406A

Sink driver

4

60

±

10

6

2000

SIP 10-pin

165

STA408A

Source driver

4

–120

–4

2000

SIP 10-pin

166

STA412A

Sink driver

4

60

3

300

SIP 10-pin

167

STA413A

Sink driver

4

35

±

5

3

500

SIP 10-pin

168

STA421A

Source driver

4

–60

–3

40

SIP 10-pin

169

STA431A

H–bridge driver

4

±

60

±

3

40

SIP 10-pin

170

STA434A

H–bridge driver

4

±

60

±

4

1000

SIP 10-pin

172

STA435A

Sink driver

4

65

±

15

4

1000

SIP 10-pin

174

STA457C

H–bridge driver

4

±

60

±

4

2000

SIP 10-pin

176

STA458C

H–bridge driver

4

±

30

±

5

40

SIP 10-pin

178

STA460C

Sink driver

2

60

±

10

6

700

SIP 10-pin

180

STA471A

Sink driver

4

60

±

10

2

2000

SIP 10-pin

181

STA472A

Source driver

4

–60

–2

2000

SIP 10-pin

182

STA473A

Sink driver

4

100

2

2000

SIP 10-pin

183

STA475A

Sink driver

4

100

±

15

2

2000

SIP 10-pin

184

STA481A

Sink driver

4

60

±

10

1

2000

SIP 10-pin

185

STA485A

Sink driver

4

100

±

15

1

2000

SIP 10-pin

186

STA501A

Sink driver

4

60

5

0.2 SIP 10-pin

187

STA504A

Sink driver

4

60

4

0.45 SIP 10-pin

188

STA505A

Sink driver

4

100

3

0.6 SIP 10-pin

189

STA506A

Sink driver

4

100

2

0.8 SIP 10-pin

190

Allegro_Power_Transistor_array_MOSFET_array-html.html
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4

Product  index  by  function

 Sink driver

Part Number Number of chips V

CEO 

(V)

I

(A)

h

FE 

(min)

R

DS (ON) 

max (

) Equivalent circuit

Package

Page

STA460C

2

60

±

10

6

700

1

SIP 10-pin

180

STA371A

3

60

±

10

2

2000

2

SIP 8-pin

160

STA301A

3

60

±

10

4

1000

2

SIP 8-pin

152

SDC06

4 30 to 45

2

400

3

SMD 16-pin

196

STA413A

4

35

±

5

3

500

4

SIP 10-pin

168

STA481A

4

60

±

10

1

2000

5

SIP 10-pin

185

SDC03

4

60

±

10

1.5

2000

6

SMD 16-pin

194

STA471A

4

60

±

10

2

2000

5

SIP 10-pin

181

STA401A

4

60

±

10

4

1000

5

SIP 10-pin

161

SLA4010

4

60

±

10

4

2000

6

SIP 12-pin with fin

18

STA406A

4

60

±

10

6

2000

5

SIP 10-pin

165

STA435A

4

65

±

15

4

1000

7

SIP 10-pin

174

STA485A

4

100

±

15

1

2000

5

SIP 10-pin

186

SDC04

4

100

±

15

1.5

2000

6

SMD 16-pin

195

STA475A

4

100

±

15

2

2000

5

SIP 10-pin

184

With built-in avalanche diode between collector and base

Part Number Number of chips V

CEO

 • V

DSS

 (V) I

C

 • I

D

 (A)

h

FE

 (min)

R

DS (ON) 

max (

) Equivalent circuit

Package

Page

SDK02

4

60

2

0.24

8

SMD 16-pin

202

SMA5114

4

60

3

0.25

9

SIP 12-pin

137

SLA5031

4

60

5

0.3

10

SIP 12-pin with fin

66

SDH02

4

100

1.5

2000

11

SMD 16-pin

198

SMA4033

4

100

2

2000

12

SIP 12-pin

126

SMA4032

4

100

3

2000

12

SIP 12-pin

125

SLA5040

4

100

4

0.6

10

SIP 12-pin with fin

68

SMA5102

4

100

4

0.6

10

SIP 12-pin

128

SMA5106

4

100

4

0.55

10

SIP 12-pin

135

SLA5002

4

100

5

0.3

10

SIP 12-pin with fin

35

SMA5105

4

100

5

0.3

10

SIP 12-pin

134

SLA4031

4

120

4

2000

12

SIP 12-pin with fin

20

SLA4061

4

120

5

2000

12

SIP 12-pin with fin

23

SLA4041

4

200

3

1000

12

SIP 12-pin with fin

21

SLA5003

4

200

5

0.9

10

SIP 12-pin with fin

36

Part Number Number of chips V

CEO

 • V

DSS

 (V) I

C

 • I

D

 (A)

h

FE

 (min)

R

DS (ON) 

max (

) Equivalent circuit

Package

Page

STA312A

3

60

3

300

13 SIP 8-pin

158

STA303A

3

100

4

100

14 SIP 8-pin

154

SDC01

4

50

2

1000

15 SMD 16-pin

193

STA412A

4

60

3

300

16 SIP 10-pin

167

STA504A

4

60

4

0.45

17 SIP 10-pin

188

STA501A

4

60

5

0.2

18 SIP 10-pin

187

STA473A

4

100

2

2000

19 SIP 10-pin

183

STA506A

4

100

2

0.8

18 SIP 10-pin

190

SDK04

4

100

2

0.8

20 SMD 16-pin

203

SMA4030

4

100

3

2000

21 SIP 12-pin

124

STA505A

4

100

3

0.6

18 SIP 10-pin

189

STA403A

4

100

4

1000

19 SIP 10-pin

163

SLA4030

4

100

4

2000

21 SIP 12-pin with fin

19

SMA5101

4

100

4

0.6

20 SIP 12-pin

127

SLA5001

4

100

5

0.3

20 SIP 12-pin with fin

34

SLA5037

4

100

10

0.08

20 SIP 12-pin with fin

67

SLA4060

4

120

5

2000

21 SIP 12-pin with fin

22

SLA5047

4

150

10

0.085

20 SIP 12-pin with fin

73

SLA5052

4

150

10

0.115

20 SIP 12-pin with fin

75

STA404A

4

200

3

1000

19 SIP 10-pin

164

SLA5041

4

200

10

0.175

20 SIP 12-pin with fin

69

SLA5044

4

250

10

0.25

20 SIP 12-pin with fin

71

SLA5029

5

60

4

0.45

22 SIP 12-pin with fin

65

SLA5011

5

60

5

0.22

22 SIP 12-pin with fin

48

SLA5085

5

60

5

0.22

22 SIP 12-pin with fin

104

SLA5021

5

100

5

0.19

22 SIP 12-pin with fin

58

SLA5042

5

100

5

0.185

22 SIP 12-pin with fin

70

SLA5055

5

150

±

5/

±

7

0.44/0.2

22 SIP 12-pin with fin

78

SLA5088

5

150

±

5/

±

7

0.44/0.2

22 SIP 15-pin with fin

106

SLA5058

5

150

±

7

0.2

22 SIP 12-pin with fin

81

SLA5081

5

150

±

7/

±

7

0.105/0.2

22 SIP 15-pin with fin

102

SLA5046

5

200

7

0.35

22 SIP 12-pin with fin

72

SLA5049

5

250

7

0.5

22 SIP 12-pin with fin

74

SLA5054

6

150

±

7/

±

5/

±

7

0.105/0.44/0.2

23 SIP 15-pin with fin

76

SLA5070

6

150

±

7/

±

7

0.105/0.2

23 SIP 15-pin with fin

92

SLA5057

6

200

±

7/

±

7

0.175/0.35

23 SIP 15-pin with fin

80

General purpose

With built-in flywheel diode

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5

11

10

12

8

5

1

9

4

3

2

7

6

G

H

I

J

K

L

M

1

2

3

4

5

6

7

8

9

0

A

B

C

D

E

F

Equivalent circuit (Sink driver)

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6

Part Number Number of chips V

CEO

 • V

DSS

 (V) I

C

 • I

D

 (A)

h

FE

 (min)

R

DS (ON) 

max (

) Equivalent circuit

Package

Page

SMA4021

4

–60

–3

2000

1 SIP 12-pin

123

SLA4071

4

–100

–5

2000

1 SIP 12-pin with fin

25

SLA5006

4

–100

–5

0.7

2 SIP 12-pin with fin

39

With built-in flywheel diode

Part Number Number of chips V

CEO

 • V

DSS

 (V) I

C

 • I

D

 (A)

h

FE

 (min)

R

DS (ON) 

max (

) Equivalent circuit

Package

Page

STA322A

3

–50

–3

100

3 SIP 8-pin

159

STA302A

3

–50

–4

1000

4 SIP 8-pin

153

STA308A

3

–120

–4

2000

4 SIP 8-pin

157

STA402A

4

–50

–4

1000

5 SIP 10-pin

162

SDA01

4

–60

–1.5

2000

6 SMD 16-pin

191

STA472A

4

–60

–2

2000

5 SIP 10-pin

182

STA421A

4

–60

–3

40

7 SIP 10-pin

169

SMA4020

4

–60

–4

2000

6 SIP 12-pin

122

SLA5024

4

–60

–4

0.55

8 SIP 12-pin with fin

64

SLA5004

4

–60

–5

0.3

8 SIP 12-pin with fin

37

SLA4070

4

–100

–5

1000

6 SIP 12-pin with fin

24

SLA5005

4

–100

–5

0.7

8 SIP 12-pin with fin

38

STA408A

4

–120

–4

2000

9 SIP 10-Pin

166

SLA5015

5

–60

–4

0.55

10 SIP 12-pin with fin

52

SLA5012

5

–60

–5

0.3

10 SIP 12-pin with fin

49

SLA5086

5

–60

–5

0.22

10 SIP 12-pin with fin

105

General purpose

Product  index  by  function

Source driver

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7

Equivalent circuit (Source driver)

1

2

3

4

5

6

7

8

9

0

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8

Part Number Number of chips V

CEO

 • V

DSS

 (V) I

C

 • I

D

 (A) h

FE

 (min) R

DS (ON) 

max (

) Equivalent circuit

Package

Page

STA458C

4

±

30

±

5

40

1 SIP 10-pin

178

STA431A

4

±

60

±

3

40

2 SIP 10-pin

170

STA434A

4

±

60

±

4

1000

3 SIP 10Pin

172

STA457C

4

±

60

±

4

2000

4 SIP 10-pin

176

SLA4310

4

±

60

±

4

80

5 SIP 12-pin with fin

26

SLA4340

4

±

60

±

4

2000

3 SIP 12-pin with fin

28

SLA5007

4

±

60

+5/–4

0.22/0.55

6 SIP 12-pin with fin

40

SLA5018

4

±

60

+5/–4

0.22/0.55

6 SIP 12-pin with fin

56

SMA5103

4

±

60

+5/–4

0.22/0.55

6 SIP 12-pin

130

SLA8001

4

±

60

±

12

50

1 SIP 12-pin with fin

120

SDH03

4

±

100/–60

±

1.5

2000

7 SMD 16-pin

200

SLA5008

4

±

100

+4/–3

0.6/1.3

6 SIP 12-pin with fin

42

SLA4390

4

±

100

±

5

2000

3 SIP 12-pin with fin

30

SLA4391

4

±

100

±

5

1000

8 SIP 12-pin with fin

32

SLA5013

4

±

100

±

5

0.3/0.7

6 SIP 12-pin with fin

50

H-bridge driver

Part Number Number of chips V

CEO

 • V

DSS

 (V) I

C

 • I

D

 (A) h

FE

 (min) R

DS (ON) 

max (

) Equivalent circuit

Package

Page

SDC07

3

60

4

2000

9 SMD 16-pin

197

SLA5080

3

60

10

0.14

10 SIP 12-pin with fin

100

STA303A

3

100

4

1000

11 SIP 8-pin

154

STA304A

3

550

1

200

12 SIP 8-pin

155

STA302A

3

–50

–4

1000

13 SIP 8-pin

153

SDA05

3

–60

–4

2000

14 SMD 16-pin

192

SLA5079

3

–60

–10

0.14

15 SIP 12-pin with fin

99

STA305A

3

–550

–1

200

16 SIP 8-pin

156

SLA5059

6

60

±

4

0.55

17 SIP 12-pin with fin

82

SLA5060

6

60

±

6

0.22

17 SIP 12-pin with fin

84

SLA5061

6

60

±

10

0.14

17 SIP 12-pin with fin

86

SLA5064

6

60

±

10

0.14

18 SIP 12-pin with fin

88

SMA6014

6

±

60

±

2 1500/2000

19 SIP 12-pin

146

SMA6010

6

±

60

±

4

2000

20 SIP 12-pin

144

SLA6012

6

±

60

±

4

2000

19 SIP 12-pin with fin

108

SMA5127

6

±

60

±

4

0.55

21 SIP 12-pin

142

SLA5009

6

±

60

+5/–4

0.22/0.55

21 SIP 12-pin with fin

44

SLA5017

6

±

60

+5/–4

0.22/0.55

21 SIP 12-pin with fin

54

SMA5104

6

±

60

+5/–4

0.22/0.55

21 SIP 12-pin

132

SLA5022

6

±

60

±

6

2000

0.22

22 SIP 12-pin with fin

60

SLA6023

6

±

60

±

6

2000

19 SIP 12-pin with fin

114

SLA6024

6

±

60

±

8

2000

19 SIP 12-pin with fin

116

SLA6026

6

±

60

±

10

2000

19 SIP 12-pin with fin

118

SMA5125

6

±

60

±

10

0.14

18 SIP 12-pin

140

SLA6022

6

±

80

±

5

2000

19 SIP 12-pin with fin

112

SLA5010

6

±

100

+4/–3

0.6/1.3

21 SIP 12-pin with fin

46

SLA6020

6

±

100

±

5

2000

20 SIP 12-pin with fin

110

SLA5023

6

±

100

±

6

2000

0.55

22 SIP 12-pin with fin

62

SLA5072

6

250

7

0.5

23 SIP 15-pin with fin

94

SMA5112

6

250

7

0.5

24 SIP 12-pin

136

SMA5117

6

250

7

0.25

24 SIP 12-pin

138

SLA5075

6

500

±

5

1.4

23 SIP 15-pin with fin

97

SMA5118

6

500

±

5

1.4

24 SIP 12-pin

139

3-phase motor driver

Part Number Number of chips V

CEO

 • V

DSS

 (V) I

C

 • I

D

 (A) h

FE

 (min) R

DS (ON) 

max (

) Equivalent circuit

Package

Page

SMA6511

5

100

±

15/–60

1.5/–3

2000

25 SIP 12-pin

148

SMA6512

5

60

±

10/–60

1.5/–3

2000

25 SIP 12-pin

150

Stepper motor driver with dual supply voltage switch

Product  index  by  function

Motor driver

Part Number Number of chips V

CEO

 • V

DSS

 (V) I

C

 • I

D

 (A) h

FE

 (min) R

DS (ON) 

max (

) Equivalent circuit

Package

Page

SLA5074

4

60

5

0.3

26 SIP 15-pin with fin

96

SLA5065

4

60

7

0.1

26 SIP 15-pin with fin

90

SLA5073

6

60

5

0.3

27 SIP 15-pin with fin

95

SLA5068

6

60

7

0.1

28 SIP 15-pin with fin

91

5-phase motor driver

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9

Equivalent circuit (Motor driver)

J

K

L

M

N

O

P

Q

R

1

2

3

4

5

6

7

8

9

0

A

B

C

D

E

F

G

H

I

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10

Application

Typical circuit example

STA301A

STA460C

STA371A

STA413A

STA401A

SDC06

STA406A

STA435A

STA471A

STA475A

STA481A

STA485A

STA4010

SDC04

SDC03

SLA4031

SLA5002

SLA4041

SLA5003

SLA4060

SLA5031

SMA4032

SLA5040

SMA4033

SMA5102

SDH02

SMA5105

SMA5106

SMA5114

SDK02

SLA4071

SLA5006

SMA4021

STA302A

STA322A

SLA5004

STA308A

STA421A

SLA5005

STA402A

SLA5024

STA408A

STA472A

SLA4070

SMA4020

SDA01

Product type

Transistor

Darlington

Single

MOSFET

Solenoid

Relay

Product  index  by  applications

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11

STA434A

STA431A

STA457C

STA458C

SLA4340

SLA4310

STA4390

SLA8001

SDH03

SLA4391

SLA5007

SLA5008

SLA5013

SLA5018

SMA5103

STA302A+STA303A

SMA6010

SLA6020

SDA05+SDC07

SLA5072

SLA5075

SMA5112

SMA5117

SMA5118

STA304A+STA305A

SLA6012

SLA6022

SLA6023

SLA6024

SLA6026

SMA6014

SLA5022

SLA5023

SLA5009
SLA5010
SLA5017
SLA5059
SLA5060
SLA5061
SLA5064
SLA5079+SLA5080
SMA5104
SMA5125
SMA5127

DC motor

Forward-reverse

control

PWM control

3-phase DC

brushless

motor

100V AC direct drive

200V AC direct drive

200V AC direct drive

PWM control

Application

Typical circuit example

Product type

Transistor

Darlington

Single

MOSFET

Allegro_Power_Transistor_array_MOSFET_array-html.html
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12

STA401A

STA460C

STA406A

STA413A

STA435A

SDC06

STA471A

STA475A

STA481A

STA485A

SLA4010

SDC04

SDC03

SMA6511

SMA6512

STA473A

STA421A

STA506A

STA472A

STA412A

STA505A

STA408A

SDC01

STA504A

STA404A

STA501A

STA403A

SMA5101

STA402A

SLA5024

SMA4030

SLA5005

SMA4020

SLA5004

SLA4070

SLA5001

SLA4060

SLA4030

SDA01

Stepper

Constant voltage

motor

drive

Dual supply voltage

drive

Bipolar drive

Application

Typical circuit example

SLA5011

SLA5012

SLA5029

SLA5015

SLA5065+SLA5068

SLA5086

SLA5073+SLA5074

SLA5085

N–CH

P–CH

5-phase

motor

Application

Typical circuit example

SLA5021

SLA5047

SLA5041

SLA5044

SLA5037

SLA5052

SLA5046

SLA5049

SLA5042

SLA5054

SLA5057

SLA5055
SLA5058
SLA5070
SLA5077
SLA5081
SLA5088

100V

150V

200V

250V

"S" shape

correction

switch

Product  index  by  applications

Application

Typical circuit example

Product type

Transistor

Darlington

Single

MOSFET

Product type

Product type

Allegro_Power_Transistor_array_MOSFET_array-html.html
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13

Inappropriate storage, characteristic inspection, or handling

may impair the reliability of the device.  To ensure high reliabil-

ity, observe the following precautions:

1. Storage precautions

It is recommended to store the device at room temperature

(between 5 and 35

°

C) and relative humidity of 40 to 75%.

Avoid storing the device in a place where the temperature or

humidity is high or changes greatly.

Store the device in a clean place that is not exposed to direct

sunlight, and is free from corrosive or harmful gases.

If the device is stored for a long time, check the solderability

and lead condition before using the device.

2. Precautions on characteristic inspections

When carrying out characteristic inspections on receiving

products or other occasions, take care to avoid applying a surge

voltage from the measuring equipment and check the termi-

nals of the measuring equipment for a short circuit or wiring

errors.  Measure the device within the range of its rated values.

3. Silicone Grease

When attaching a heatsink, apply a small amount of silicone

evenly to the back of the device and both sides of the insulator

to reduce the thermal resistance between the device and

heatsink.

   Recommended silicone grease

G746

SHINETSU SILICONE CO., LTD.

YG6260

GE TOSHIBA SILICONE CO., LTD.

SC102

DOW CORNING TORAY SILICONE CO., LTD.

Please select a silicone grease carefully since the oil in

some grease can penetrate the product, which will result

in an extremely short product life.

4. Screw tightening torque

If screws are not tightened with sufficient torque, this can in-

crease the thermal resistance and reduce the radiation effect.

Tightening screws with too great a torque damage the screw

thread, deform the heatsink, or twist the device frame until it is

damaged.  Therefore, tighten screws with a torque between

0.588 and 0.784 N • m (6 to 8 kgf • cm).

5. Soldering temperature

If soldering is necessary, take care to keep the application of

heat as brief as possible, and within the following limits:

260

±

5

°

C for 10 s max

350

°

C for 3 s max (soldering iron)

6. Heatsink

A large contact area between the device and the heatsink for

effective heat radiation is required.  To ensure a large contact

area, minimize mounting holes and select a heatsink with a

sufficiently smooth surface and that is free from burring or metal

debris.

7. Handling precautions to protect power

MOSFET arrays from static damage

When handling the device, physical grounding is necessary.

Wear a wrist strap with a 1 M

 resistor close to the body in

the wrist strap to prevent electric shock.

Use a conductive tablemat or floor mat at the device han-

dling workbench and to ensure grounding.

When using a curve tracer or other measuring equipment,

ground the equipment as well.

When soldering, ground the bit of the soldering iron and the

dip tank to prevent a leakage voltage from damaging the

device.

Store the device in the shipping container or a conductive

container or use aluminum foil to protect the device from

static electricity.

Storage, characteristic inspection, and handling precautions

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14

1. What is avalanche energy capability ?

When a MOSFET is used for high-speed switching, the in-

ductive load and wiring inductance may cause a counter elec-

tromotive voltage at cutoff that the device cannot withstand.

Avalanche energy capability is the non-clamped ability to with-

stand damage expressed as energy.  As long as the energy

applied to the device at cutoff is within the guaranteed ava-

lanche energy capability, the device will not be damaged even

if the drain-source voltage exceeds the capability.

For example, a drain-source voltage that is within the guaran-

teed capability when electrically stationary may exceed the limit

at startup or cutoff.  Usually, a snubber circuit or similar surge

absorbing circuit is used to keep the drain-source voltage within

the guaranteed capability.  Sanken MOSFETs, however, do not

require this kind of protective circuit because the avalanche

energy capability is guaranteed.  Sanken MOSFETs enable

the number of parts to be reduced, saving board area.

* Consult the engineering department of Sanken when plan-

ning to use MOSFETs in avalanche mode.

2. EAS calculation method

If the current in an inductive load L is I

LP

 at the moment when

the MOSFET is cut off, E

AS

 can be expressed as follows:

*V

DD 

: Supply voltage

If the value of L is not known in an actual circuit, EAS can

also be calculated from the actual voltage and current wave-

forms as follows:

E

AS

 = P

S

 • t .....................................................................

2

*P

S

 : Surge power  *t : Surge time

The following calculation is used to determine E

AS

 where the

voltage and current shown in Fig. A are applied to the MOSFET

in a circuit

Integrate the overlapping section of I

D

 and V

DS

 to calculate

I

D

 • V

DS

 • dt.  When the I

D

 waveform is triangular, E

AS

 will be as

follows:

E

AS 

=       • 10(A) • 550(V) • 10(

µ

s) = 27.5(mJ)

3. Temperature derating for EAS

The E

AS

 value in the specifications is guaranteed when the

channel temperature T

ch

 is 25

°

C.  Since the E

AS

 value drops as

the channel temperature rises, derating depending on the tem-

perature is necessary.

Fig. B shows the derating curve for single avalanche energy

capability.  This is the derating curve of E

AS

 and the channel

temperature (T

ch

 (start)) immediately before the avalanche oc-

curs in the product, with the E

AS

 value (maximum rating) at

25

°

C as 100%.

For example, if the product temperature is 50

°

C, the E

AS

 value

is derated to 64% of the value at 25

°

C.

Fig. A

Fig. B

4. Continuous avalanche energy capability

This section explains the derating method for continuous ava-

lanche.

Considering continuous avalanche as the repetition of a single

avalanche, the safe operating area (SOA) is determined using

the derating curve shown in Fig. B.

Calculate the energy and T

ch

 (start) of avalanche in the worst

condition and determine SOA using the calculated data and

the derating curve shown in Fig. B.  The temperature rise due

to avalanche should not cause the channel temperature to ex-

ceed the maximum rating.

The following is an example of determining SOA judgment by

calculation when a MOSFET enters a transient avalanche state

at power-on then changes to a stationary state

Supposing that the waveform is as shown in Fig. C until the

MOSFET changes to the stationary state, calculate the start

loss and switching (turn-on/off) loss.  To simplify the calcula-

tion, the average loss Pa and the last two waveforms are used

for approximation.  (Fig. D)

First, calculate the channel temperature T

ch

  (

τ

) at time (

τ

)

where the temperature condition is severest.

If the T

ch

 (

τ

) value is within the maximum rating, there is no

problem as far as the temperature is concerned.

10A

550V
(V

DSS

)

550V
(V

DSS

)

0

0

I

D

V

DS

10   s

µ

100

80

60

40

20

0

25

50

75

100

125

150

Tch (start) (

°

C)

E

AS(normalized) 

(%)

I

Lp 

=

 

I

D

 max

E

AS

 – Tch (start)

Avalanche energy capability of MOSFET array

Sanken MOSFETs feature guaranteed
avalanche energy capability.

E

AS

 =

• L • I

LP

 •                    .......................................

1

1
2

V

DSS

V

DSS 

– V

DD

1
2

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

15

T

ch

(

τ

) = T

+ P

• r

ch–c 

(T

+ T + t

+ t

+ t

3

)

+ (P

1

 – P

a

) • r

ch–c 

(T + t

1

 + t

2

 + t

3

)

– (P

1

 – P

2

) • r

ch–c 

(T + t

2

 + t

3

)

+ (P

3

 – P

2

) • r

ch–c 

(T + t

3

)

– P

3

 • r

ch–c 

(T) + P

• r

ch–c 

(t

+ t

+ t

6

)

– (P

4

 – P

5

) • r

ch–c 

(t

+ t

6

)

+ (P

6

 – P

5

) • r

ch–c 

(t

6

)................................................

3

*T

a

:  Ambient temperature

*r

ch-c

 (

t

) :    Transient thermal resistance at pulse width t

Then calculate the channel temperature T

ch

 (

τ

l) immediately

before avalanche.

T

ch

(

τ

) = T

+ P

• r

ch–c 

(T

+ T

 + t

+ t

+ t

3

)

+ (P

1

 – P

a

) • r

ch–c 

(T

 + t

1

 + t

2

 + t

3

)

– (P

1

 – P

2

) • r

ch–c 

(T

 + t

2

 + t

3

)

+ (P

3

 – P

2

) • r

ch–c 

(T

 + t

3

)

– P

3

 • r

ch–c 

(T

) + P

• r

ch–c 

(t

+ t

+ t

6

)

– (P

4

 – P

5

) • r

ch–c 

(t

+ t

6

)

+ (P

6

 – P

5

) • r

ch–c 

(t

6

)................................................

4

This T

ch

 (

τ

) value becomes T

ch

 (

start

).  If the avalanche energy

(E

AS

 = P

• t

6

) is within the value derated from the guaranteed

E

AS

 value at the temperature, there is no problem as far as the

avalanche energy is concerned.

Fig. E

V

GS

0V

R

G

V

DS

V

DD

I

L

L

(a)  Measuring circuit

(b)  Output waveform

V

(BR)DSS

V

(BR)DSS

V

(BR)DSS 

 

V

DD

1
2

V

DS

V

DD

I

L

I

Lp

E

AS 

=     • L • I

Lp

2

 •    

Fig. C

T

(n)

I

D

V

DS

Avalanche in this section

Transient

Stationary

Fig. D

T

(n)

t

1

t

2

t

3

t

4

t

5

t

6

P

a

P

1

P

2

P

3

P

4

P

5

P

6

τ

1

τ

T

T'

0

5. Avalanche energy capability measuring method

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

16

The Darlington transistor chip with a built-in avalanche diode

is a planar type monolithic Darlington transistor chip having

the equivalent circuit shown in the figure on the right. Surge

Voltage can be absorbed by the avalanche diode provided be-

tween the collector and the base. This eliminated the need for

extra components for absorbing surge caused by counter elec-

tromotive force produced by inductive load switch circuits. These

Darlington transistor arrays are ideal for relay drive, solenoid

drive, and printer wire drive applications.

Transistor array with built-in avalanche diode

SLA4010, STA301A, 371A, 401A, 406A, 413A, 435A,
460C, 471A, 475A, 481A, 485A, SDC03, 04, 0 6

Switching time measurement

1. Transistor array

Fig. 1  PNP

2. MOS FET array

I

B2

R

2

R

1

R

L

I

B1

I

C

+V

BB2

–V

BB1

–V

CC

GND

0

D.U.T

50   s

0

0

t

on

t

stg

t

f

0.1I

C

0.9I

C

I

B2

I

B1

I

C

0

0

0

(a) Measuring circuit

(b) Input-output waveform

Base 
current

Collector 
current

µ

20   s

µ

Fig. 2  NPN

I

B1

R

1

R

2

R

L

I

B2

I

C

+V

BB1

–V

BB2

V

CC

GND

0

D.U.T

0

0

t

on

t

stg

t

f

0.9I

C

0.1I

C

I

B2

I

B1

I

C

0

0

0

(a) Measuring circuit

(b) Input-output waveform

50   s

µ

20   s

µ

Base 
current

Collector 
current

Fig. 3   Nch

Fig. 4  Pch

V

GS

0V

R

G

V

DS

V

DD

I

D

R

L

(a) Measuring circuit

(b) Input-output waveform

P.W.=10   s
Duty cycle

1%

t

d(on)

t

on

t

r

t

d(off)

t

off

t

r

90%

10%

90%

10%

V

GS

V

DS

µ

0V

V

GS

R

G

V

DS

V

DD

I

D

R

L

P.W.=10   s
Duty cycle

1%

t

d(on)

t

on

t

r

t

d(off)

t

off

t

r

10%

90%

10%

90%

V

GS

V

DS

(a) Measuring circuit

(b) Input-output waveform

µ

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

17

External dimensions

  (unit: mm)

A  SLA (12-pin)

31.5max

9.5min

16.0

±

0.2

13.0

±

0.2

2.7

31.0

±

0.2

24.4

±

0.2

Ellipse

3.2

±

0.15

 

×

 

3.8 4.8

±

0.2

1.7

±

0.1

2.2

±

0.7

1.2

±

0.15

1.45

±

0.15

0.55

–0.1

+0.2

0.85

–0.1

+0.2

12

a. Part No.
b. Lot No.

11 

×

 

P2.54

±

0.7

 = 27.94

±

1.0

Pin1

3.2

±

0.15

φ

a

b

31.0

±

0.2

10.2

±

0.2

(10.4)

2.4

1.46

±

0.15

4.0

±

0.2

2.5

±

0.2

1.2

±

0.1

27.94

2.54

0.85

–0.1

+0.2

0.55

–0.1

+0.2

a

b

a. Part No.
b. Lot No.

B  SMA

C  STA (8-pin)

9.0

±

0.2

2.3

±

0.2

11.3

±

0.2

4.7

±

0.5

0.5

±

0.15

1.2

±

0.2

4.0

±

0.2

0.5

±

0.15

C1.5

±

0.5

1.0

±

0.25

(2.54)

9

 

×

 

2.54 = 22.86

±

0.25

25.25

±

0.2

a

b

1

2

3

4

5

6

7

8

9 10

a. Part No.
b. Lot No.

     STA (10-pin)

6.8max

4.0max

3.6

±

0.2

0.25

1.4

±

0.2

8.0

±

0.5

6.3

±

0.2

9.8

±

0.3

1.0

±

0.3

2.54

±

0.25

19.56

±

0.2

20.0max

0.89

±

0.15

0.75

–0.05

+0.15

0.3

0.05

+0.15

16

0~0.1

3.0

±

0.2

a

b

a. Part No.
b. Lot No.

9

8

1

1

C1.5

±

0.5

1.2

±

0.2

0.5

±

0.15

×

 

P2.54=17.78

1.0

±

0.25

0.5

±

0.15

(2.54)

20.4 max

4.7

±

0.5

11.3

±

0.2

2.5 max

9.0

±

0.2

2

3

4

5

6

7

8

4.0

±

0.2

Pin No.

Weight : Approx. 2.0g

Weight : Approx. 2.6g

Weight : Approx. 4.0g

Weight : Approx. 1.05g

D  SD

Weight : Approx. 6.0g

31.3

±

0.2

4.8

±

0.2

1.7

±

0.1

2.45

±

0.2

9.9

±

0.2

13.0

±

0.2

16.0

±

0.2

31.0

±

0.2

24.4

±

0.2

16.4

±

0.2

1.15

–0.1

+0.2

0.55

–0.1

+0.2

9.7

0.5

+1.0

0.65

–0.1

+0.2

3.2

±

0.15

φ

3.2

±

0.15

× 

3.8

φ

14 

× 

P2.03

±

0.7

=28.42

±

1.0

R-End

4.0

±

0.7

(3.0)

6.7

±

0.5

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

     SLA (15-pin)

Weight : Approx. 6.0g

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

18

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

60

±

10

V

V

CEO

60

±

10

V

V

EBO

6

V

I

C

4

A

I

CP

6 (PW

10ms, D

u

50%)

A

I

B

0.5

A

5 (T

a

=25

°

C)

40 (T

c

=25

°

C)

T

j

150

°

C

T

stg

–40 to +150

°

C

SLA4010

Absolute maximum ratings

(T

a

=25

°

C)

Symbol

unit

Conditions

I

CBO

10

µ

A

V

CB

=50V

I

EBO

10

mA

V

EB

=6V

V

CEO

50

60

70

V

I

C

=10mA

h

FE

2000

V

CE

=4V, I

C

=3A

V

CE

(sat)

1.5

V

I

C

=3A, I

B

=10mA

Equivalent circuit diagram

P

T

W

5

4

3

2

1

0

0

1

2

3

4

1.0mA

0.8mA

0.6mA

0.5mA

0.4mA

0.3mA

I

B

=2.0m

A

V

CE

  (V)

I

C

  (A)

20000

0.05

0.1

1

4

I

C

  (A)

10000

5000

1000

500

100

50

0.5

h

FE

(V

CE

=4V) 

typ

20000

10000

5000

1000

500

100

50

0.05

0.1

0.5

1

4

T

a

=125

°

C

25

°

C

–30

°

C

h

FE

I

C

  (A)

(V

CE

=4V)

0.1

2

1

0

0.5

1

4

I

C

  (A)

V

CE

  (sat) (V)

T

a

=–30

°

C

25

°

C

125

°

C

(I

C

 / I

B

=1000)

3

2

1

0

0.2

0.5

1

5

10

50

100

V

CE

  (sat) (V)

I

B

  (mA)

I

C

=4A

I

C

=2A

I

C

=3A

I

C

=1A

20

10

5

1.0

0.5

1

5

10

50 100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

5

3

5

10

50

100

V

CE

  (V)

1

0.5

0.1

I

C

  (A)

10m

s

1ms

100

ms

D.C.T

C

=25

°

C

10

0.05

Single Pulse

Without Heatsink

T

a

=25

°

C

R

1

: 3k

Ω 

typ  R

2

: 150

Ω 

typ

1

R

1

R

2

4

8

11

12

9

5

2

10

7

6

3

NPN Darlington

With built-in avalanche diode

40

30

20

10

0

0

–40

50

100

150

P

T

  (W)

Ta  (

°

C)

Without Heatsink

50

×

50

×

2mm

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

0

1

V

BE

  (V)

2

3

4

2

1

0

I

C

  (A)

(V

CE

=–4V)

T

a

=125

°

C

75

°

C

2

5

°

C

3

0

°

C

Electrical characteristics

Specification

min

typ

max

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

19

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SLA4030

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

120

V

V

CEO

100

V

V

EBO

6

V

I

C

4

A

I

CP

6 (PW

1ms, D

u

50%)

A

I

B

0.5

A

5 (T

a

=25

°

C)

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j-c

 5

°

C/W

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=120V

I

EBO

10

mA

V

EB

=6V

V

CEO

100

V

I

C

=10mA

h

FE

2000

V

CE

=4V, I

C

=2A

V

CE

(sat)

1.5

V

I

C

=2A, I

B

=10mA

P

T

1

2

R

1

R

2

3

5

4

6

9

7

11

10

8

12

R

1

: 3k

Ω 

typ  R

2

: 500

Ω 

typ

4

3

2

1

0

0

1

2

3

V

CE

  (V)

I

C

  (A)

4

5

6

0.8mA

0.6mA

0.5mA

0.4mA

0.3mA

I

B

=1mA

20000

0.02

0.05

0.1

1

4

I

C

  (A)

10000

5000

1000

500

100

50

20

0.5

h

FE

(V

CE

=2V)

typ

20000

0.02

0.05

0.1

1

4

I

C

  (A)

10000

5000

1000

500

100

50

20

0.5

h

FE

(V

CE

=2V)

75

°

C

25

°

C

–30

°

C

T

a

=125

°

C

0.5

3

2

1

0

0.3

1

5

 I

C

  (A)

 V

CE

  (sat) (V)

T

a

=125

°

C

7

5

°

C

25

°

C

–3

0

°

C

(I

C

 / I

B

=500)

3

2

1

0

0.1

0.5

1

5

10

V

CE

  (sat) (V)

I

B

  (mA)

50

I

C

=4A

I

C

=2A

I

C

=1A

4

3

2

1

0

0

1

2

3

V

BE

  (V)

I

C

  (A)

75

°

C

25

°

C

30

°

C

(V

CE

=2V)

T

a

=125

°

C

25

20

15

10

5

0
–40

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

Without Heatsink

NPN Darlington

General purpose

5

3

5

10

50

200

V

CE

  (V)

1

0.5

0.1

I

C

  (A)

10

0.03

0.05

100

1

0

m

s

1m

s

100

µ

s

Single Pulse
Without Heatsink
T

a

=25

°

C

20

10

5

1

0.5

5

1

10

100

1000

500

50

PW  (mS)

θ

j–

a

  (

°

C / W)

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Specification

min

typ

max

External dimensions

A

 • • • 

SLA (12-pin)

W

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

20

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SLA4031

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=120V

I

EBO

10

mA

V

EB

=6V

V

CEO

120

V

I

C

=25mA

h

FE

2000

5000

15000

V

CE

=2V, I

C

=2A

V

CE 

(sat)

1.0

1.5

V

V

BE 

(sat)

1.6

2.0

V

t

on

0.6

µ

s

V

CC

40V,

t

stg

5.0

µ

s

I

C

=2A,

t

f

2.0

µ

s

I

B1

=–I

B2

=10mA

P

T

W

I

C

=2A, I

B

=2mA

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

Equivalent circuit diagram

1

2

3

4

6

5

R

1

R

2

8

9

10

11

7

12

R

1

: 3k

Ω 

typ  R

2

: 500

Ω 

typ

4

3

2

1

0

0

1

2

3

V

CE

  (V)

I

C

  (A)

4

5

0.8m

A

0.6mA

0.5mA

0.4mA

0.3mA

I

B

=1

m

A

20000

0.02

0.05

0.1

1

4

 I

C

  (A)

10000

5000

1000

500

100

50

20

0.5

h

FE

(V

CE

=2V)

typ

20000

0.02

0.05

0.1

1

4

I

C

  (A)

10000

5000

1000

500

100

50

20

0.5

h

FE

(V

CE

=2V)

75

°

C

25

°

C

–3

0

°

C

T

a

=125

°

C

0.5

3

2

1

0

0.3

1

5

 I

C

  (A)

 V

CE

  (sat) (V)

T

a

=125

°

C

7

5

°

C

25

°

C

–3

0

°

C

(I

C

 / I

B

=500)

3

2

1

0

0.1

0.5

1

5

10

V

CE

  (sat) (V)

I

B

  (mA)

50

I

C

=4A

I

C

=2A

I

C

=1A

4

3

2

1

0

0

1

2

3

V

BE

  (V)

I

C

  (A)

T

a

=

125

°

C

7

5

°

C

25

°

C

30

°

C

(V

CE

=2V)

25

20

15

10

5

0
–40

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2

5

3

5

10

50

200

V

CE

  (V)

1

0.5

0.1

 I

C

  (A)

10

0.03

0.05

100

1

0

m

s

1m

s

100

µ

s

Single Pulse
Without Heatsink
T

a

=25

°

C

NPN Darlington

With built-in flywheel diode

Absolute maximum ratings

Electrical characteristics

Specification

min

typ

max

Diode for flyback voltage absorption

Specification

min

typ

max

External dimensions

A

 • • • 

SLA (12-pin)

20

10

5

1

0.5

5

1

10

100

1000

500

50

PW  (mS)

θ

j–

a  (

°

C / W)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

120

V

V

CEO

120

V

V

EBO

6

V

I

C

4

A

I

CP

6 (PW

1ms, D

u

50%)

A

I

B

0.5

A

I

F

4 (PW

0.5ms, D

u

25%)

A

I

FSM

6 (PW

10ms, Single)

A

V

R

120

V

5 (T

a

=25

°

C)

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j-c

 5

°

C/W

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

21

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SLA4041

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

200

V

V

CEO

200

V

V

EBO

6

V

I

C

3

A

I

CP

6 (PW

10ms, D

u

50%)

A

I

B

0.2

A

I

F

3 (PW

0.5ms, D

u

25%)

A

I

FSM

6 (PW

10ms, single)

A

V

R

200

V

5 (T

a

=25

°

C)

25 (T

c

=25

°

C)

T

j

150

°

C

T

stg

–40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=200V

I

EBO

10

mA

V

EB

=6V

V

CEO

200

V

I

C

=10mA

h

FE

1000

6000

15000

V

CE

=4V, I

C

=1.5A

V

CE

(sat)

1.1

1.5

V

V

BE

(sat)

1.7

2.0

V

V

FEC

1.5

V

I

FEC

=2.0A

Equivalent circuit diagram

P

T

W

I

C

=1.5A, I

B

=3mA

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

R

200

V

I

R

=10

µ

A

V

F

1.6

V

I

F

=1A

I

R

10

µ

A

V

R

=200V

t

rr

100

ns

I

F

=

±

100mA

Diode for flyback voltage absorption

6

5

4

3

2

1

0

I

C

  (A)

0

1

2

3

4

5

6

V

CE

  (V)

I

B

=200mA

30m

A

100mA

3mA

10mA

1mA

(V

CE

=4V)

5000

1000

500

100

50

30

0.03

0.05 0.1

0.5

1

5 6

h

FE

I

C

  (A)

5000

1000

500

100

50

30

0.03 0.05

0.1

0.5

5 6

(V

CE

=4V)

h

FE

I

C

  (A)

75

°

C

T

a

=125

°

C

25

°

C

–30

°

C

3

2

1

0

V

CE

  (sat) (V)

0.2

0.5

1

5 6

I

C

  (A)

(I

C

 / I

B

=100)

Ta=125

°

C

25

°

C

30

°

C

75

°

C

3

2

1

0

V

CE

  (sat) (V)

I

C

=3A

I

C

=1.5A

I

C

=1A

0.5

1

5

10

50

100 200

I

B  

(mA)

6

5

4

3

2

1

0

0

1

2

3

I

C

  (A)

V

BE

  (V)

(V

CE

=4V)

T

a

=125

°

C

25

°

C

3

0

°

C

7

5

°

C

20

10

5

1

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

25

20

15

10

5

0
–40

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

10

0

×

10

0

×

2

50

×

50

×

2

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

100

µ

S

1mS

10m

S

10

5

1

0.5

0.1

0.05

0.03

5

10

50

100

200

I

C

  (A)

V

CE

  (V)

Single Pulse
Without Heatsink
T

a

=25

°

C

R

1

: 2k

Ω 

typ  R

2

: 200

Ω 

typ

1

2

3

4

6

5

R

1

R

2

8

9

10

11

7

12

NPN Darlington

With built-in flywheel diode

Absolute maximum ratings

Electrical characteristics

Specification

min

typ

max

Specification

min

typ

max

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

22

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SLA4060

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=120V

I

EBO

10

mA

V

EB

=6V

V

CEO

120

V

I

C

=25mA

h

FE

2000

5000

15000

V

CE

=2V, I

C

=3A

V

CE

(sat)

1.0

1.5

V

V

BE

(sat)

1.6

2.0

V

t

on

0.5

µ

s

V

CC

30V,

t

stg

5.5

µ

s

I

C

=3A,

t

f

1.5

µ

s

I

B1

=–I

B2

=3mA

Equivalent circuit diagram

P

T

W

I

C

=3A, I

B

=3mA

1

2

R

1

R

2

3

5

4

6

9

7

11

10

8

12

R

1

: 2.5k

Ω 

typ  R

2

: 200

Ω 

typ

5

4

0

1

 V

CE

  (V)

I

C

  (A)

3

2

1

0

2

3

4

5

1mA 0.8mA 0.7mA

I

B

=2mA

0.5mA

0.4mA

0.6mA

20000

10000

5000

1000

500

100

0.02

 I

C

  (A)

h

FE

50

20

0.05

0.5

1

5

(V

CE

=2V)

0.1

typ

20000

10000

5000

1000

500

100

0.02

IC  (A)

h

FE

50

20

0.05

0.5

1

5

0.1

75

°

C

25

°

C

T

a

=125

°

C

–3

0

°

C

(V

CE

=2V)

V

CE

  (sat) (V)

0.5

 I

C

  (A)

0

5

2

1

1

(I

C

 / I

B=

1000)

125

°

C

25

°

C

75

°

C

Ta=–30

°

C

3

V

CE

  (sat) (V)

0.2

I

B

  (mA)

0

0.5

10

50

2

1

1

5

I

C

=3A

I

C

=1A

I

C

=5A

5

4

0

V

BE

  (V)

I

C

   (A)

3

2

1

0

1

2

3

(V

CE

=2V)

75

°

C

25

°

C

30

°

C

T

a

=125

°

C

20

10

5

1

0.5

1

5

10

50 100

500 1000

PW  (mS)

θ

j–

a

  (

°

C / W)

25

20

15

10

5

0

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

–40

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2

10

5

1

0.5

0.1

V

CE

  (V)

I

C

  (A)

0.03

0.05

Single Pulse
Without Heatsink
Ta=25

°

C

100

µ

s

1ms

1

0

m

s

3

5

10

50

100

200

NPN Darlington

General purpose

Absolute maximum ratings

Electrical characteristics

Specification

min

typ

max

External dimensions

A

 • • • 

SLA (12-pin)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

120

V

V

CEO

120

V

V

EBO

6

V

I

C

5

A

I

CP

8 (PW

1ms, D

u

50%)

A

I

B

0.5

A

5 (T

a

=25

°

C)

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j-c

 5

°

C/W

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

23

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=120V

I

EBO

10

mA

V

EB

=6V

V

CEO

120

V

I

C

=25mA

h

FE

2000

5000

15000

V

CE

=2V, I

C

=3A

V

CE

(sat)

1.0

1.5

V

V

BE

(sat)

1.6

2.0

V

t

on

0.5

µ

s

V

CC

30V,

t

stg

5.5

µ

s

I

C

=3A,

t

f

1.5

µ

s

I

B1

=–I

B2

=3mA

SLA4061

Equivalent circuit diagram

P

T

W

I

C

=3A, I

B

=3mA

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

Diode for flyback voltage absorption

R

1

: 2.5k

Ω 

typ  R

2

: 200

Ω 

typ

5

4

0

1

V

CE

  (V)

I

C

  (A)

3

2

1

0

2

3

4

5

1mA 0.8mA

0.7mA

0.6mA

I

B

=2mA

0.4mA

0.5mA

20000

10000

5000

1000

500

100

0.02

 I

C

  (A)

 h

FE

50

20

0.05

0.5

1

5

(V

CE

=2V)

0.1

typ

20000

10000

5000

1000

500

100

0.02

50

20

0.05

0.5

1

5

0.1

75

°

C

–30

°

C

T

a

=125

°

C

25

°

C

 I

C

  (A)

 h

FE

(V

CE

=2V)

0

0.5

5

2

1

1

125

°

C

25

°

C

T

a

=–30

°

C

75

°

C

V

CE

  (sat) (V)

 I

C

  (A)

(I

C

 / I

B

=1000)

3

0.2

0

0.5

10

50

2

1

1

5

I

C

=3A

I

C

=1A

I

C

=5A

V

CE

  (sat) (V)

I

 (mA)

5

4

0

3

2

1

0

1

2

3

75

°

C

25

°

C

30

°

C

T

a

=

1

2

5

°

C

V

BE

  (V)

I

C

  (A)

(V

CE

=2V)

20

10

5

1

0.5

1

5

10

50 100

500 1000

PW  (mS)

θ

j–

a

  (

°

C / W)

25

20

15

10

5

0
–40

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

10

5

1

0.5

0.1

0.03

0.05

Single Pulse
Without Heatsink
T

a

=25

°

C

100

µ

s

1

m

s

10m

s

3

5

10

50

100

200

V

CE

  (V)

I

C

  (A)

NPN Darlington

With built-in flywheel diode

1

2

3

4

6

5

R

1

R

2

8

9

10

11

7

12

Specification

min

typ

max

Specification

min

typ

max

External dimensions

A

 • • • 

SLA (12-pin)

Absolute maximum ratings

Electrical characteristics

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

120

V

V

CEO

120

V

V

EBO

6

V

I

C

5

A

I

CP

8 (PW

1ms, D

u

50%)

A

I

B

0.5

A

I

F

5 (PW

0.5ms, D

u

25%)

A

I

FSM

8 (PW

10ms, single)

A

V

R

120

V

5 (T

a

=25

°

C)

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j-c

 5

°

C/W

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

24

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SLA4070

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–10

µ

A

V

CB

=–100V

I

EBO

–10

mA

V

EB

=–6V

V

CEO

–100

V

I

C

=–10mA

h

FE

1000

5000

15000

V

CE

=–2V, I

C

=–3A

V

CE

(sat)

–1.0

–1.5

V

V

BE

(sat)

–1.6

–2.0

V

P

T

W

I

C

=–3A, I

B

=–6mA

R

1

R

2

10

12

7

8

6

5

3

1

11

9

4

2

R

1

: 3k

Ω 

typ  R

2

: 100

Ω 

typ

–8

–6

0

–5

–4

–3

–2

–7

–1

0

–1

–2

–3

–4

–5

–2mA

–1.2mA

–0.8mA

–0.6mA

–0.4mA

I

B

= –4mA

 V

CE

  (V)

I

C

  (A)

10000

5000

1000

500

100

–0.03

50

–0.5

–1

–5

–8

–0.1

typ

 I

C

  (A)

 h

FE

(V

CE

=–4V)

10000

5000

1000

500

100

–0.03

50

–0.5

–1

–5 –8

–0.1

25

°

C

–30

°

C

T

a

=125

°

C

75

°

C

 I

C

  (A)

 h

FE

(V

CE

=–4V)

T

a

= –30

°

C

25

°

C

75

°

C

125

°

C

–3

–0.3

–2

–1

0

–0.5

–1

–5

–8

V

CE

  (sat) (V)

 I

C

  (A)

(I

C

 / I

B

=1000)

I

C

= –5A

I

C

= –3A

I

C

= –1A

–3

–0.3

–1

–5

–10

–50

–100 –200

–2

–1

V

CE

  (sat) (V)

I

B

  (mA)

0

–8

I

C

  (A)

–6

–4

–2

0

V

BE

  (V)

0

–1

–2

–3

75

°

C

25

°

C

30

°

C

T

a

=

1

25

°

C

(V

CE

=–4V)

20

10

5

1

0.5

1

5

10

50 100

500 1000

PW  (mS)

θ

j–

a

  (

°

C/W)

25

20

15

10

5

0
–40

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

W

ith Infinite H

eatsink

Without Heatsink

10

0

×

10

0

×

2

50

×

50

×

2

–5

–8

–1

–0.5

–0.1

V

CE

  (V)

I

C

  (A)

–0.03

–0.05

–3

–5

–10

–50

–100

10

0

µ

s

1m

s

10m

s

Single Pulse
Without Heatsink
T

a

=25

°

C

PNP Darlington

General purpose

Absolute maximum ratings

Electrical characteristics

Specification

min

typ

max

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–100

V

V

CEO

–100

V

V

EBO

–6

V

I

C

–5

A

I

CP

–8 (PW

1ms, D

u

50%)

A

I

B

–0.5

A

5 (T

a

=25

°

C)

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j-c

 5

°

C/W

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

25

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SLA4071

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–10

µ

A

V

CB

=–100V

I

EBO

–10

mA

V

EB

=–6V

V

CEO

–100

V

I

C

=–10mA

h

FE

2000

5000

15000

V

CE

=–2V, I

C

=–3A

V

CE

(sat)

–1.0

–1.5

V

V

BE

(sat)

–1.6

–2.0

V

Equivalent circuit diagram

I

C

=–3A, I

B

=–6mA

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

2

3

4

R

1

R

2

5

6

1

9

10

11

12

7

8

R

1

: 3k

Ω 

typ  R

2

: 100

Ω 

typ

–8

–6

0

I

C

  (A)

–5

–4

–3

–2

–7

–1

0

–1

–2

–3

–4

–5

–2m

A

–1.2mA

–0.8mA

–0.6mA

–0.4mA

I

B

=–

4m

A

 V

CE

  (V)

10000

5000

1000

500

100

–0.03

50

–0.5

–1

–5

–8

–0.1

typ

 I

C

  (A)

 h

FE

(V

CE

=–4V)

10000

5000

1000

500

100

–0.03

 I

C

  (A)

50

–0.5

–1

–5

–8

–0.1

25

°

C

–30

°

C

T

a

=12

5

°

C

75

°

C

 h

FE

(V

CE

=–4V)

T

a

=–30

°

C

25

°

C

75

°

C

125

°

C

–3

–0.3

–2

–1

0

–0.5

–1

–5

8

V

CE  

(sat)  (V)

 I

C

  (A)

(I

C

 / I

B

=1000)

I

C

=–5A

I

C

=–3A

I

C

=1A

–3

V

CE

  (sat) (V)

I

B

  (mA)

–0.3 –0.5

–1

–5

–10

–50 –100 –200

–2

–1

0

–8

I

C

  (A)

–6

–4

–2

0

V

BE

  (V)

0

–1

–2

–3

7

5

°

C

25

°

C

30

°

C

T

a

=125

°

C

(V

CE

=–4V)

20

10

5

1

0.5

1

5

10

50 100

500 1000

θ

j–

a

  (

°

C / W)

P

W

  (mS)

25

20

15

10

5

0
–40

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2

–10

–5

–1

–0.5

–0.1

V

CE

  (V)

I

C

  (A)

–0.03

–0.05

Single Pulse
Without Heatsink
T

a

=25

°

C

–3

–5

–10

–50

–100

100

µ

s

1ms

10ms

PNP Darlington

With built-in flywheel diode

Absolute maximum ratings

Electrical characteristics

P

T

W

Specification

min

typ

max

Diode for flyback voltage absorption

Specification

min

typ

max

External dimensions

A

 • • • 

SLA (12-pin)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–100

V

V

CEO

–100

V

V

EBO

–6

V

I

C

–5

A

I

CP

–8 (PW

1ms, D

u

50%)

A

I

B

–0.5

A

I

F

–5 (PW

0.5ms, D

u

25%)

A

I

FSM

–8 (PW

10ms, single)

A

V

R

120

V

5 (T

a

=25

°

C)

25 (T

c

=25

°

)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j-c

 5

°

C/W

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

26

Characteristic curves

SLA4310

P

T

W

Ratings

NPN

PNP

0

0

1

2

4

3

1

2

3

V

CE

  (V)

I

C

  (A)

5

4

6

I

B

=70mA

60mA

50mA

40mA

30mA

20mA

10mA

5mA

0.01

I

C

  (A)

0.1

1

4

0.5

0.05

20

100

50

500

h

FE

(V

CE

=4V)

typ

0

V

BE

  (V)

0.5

1.5

1.0

0

2

3

1

4

I

C

  (A)

(V

CE

=4V)

T

a

=

1

2

5

°

C

7

5

°

C

2

5

°

C

30

°

C

0

–1

–2

0

–1

–2

–3

–4

–3

V

CE

  (V)

I

C

  (A)

–4

–5

–6

I

B

=–

80mA

–6

0m

A

–50mA

–40m

A

–30mA

–20mA

–10mA

–5mA

–0.01

I

C

  (A)

–0.1

typ

–1

–4

–0.5

–0.05

20

100

50

500

h

FE

(V

CE

=–4V)

–0.01

I

C

  (A)

0.1

–1

–4

–0.5

–0.05

20

100

50

500

h

FE

(V

CE

=–4V)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

0

V

BE

  (V)

–0.5

–1.5

–1.0

0

–2

–3

–1

–4

I

C

  (A)

(V

CE

=–4V)

T

a

=

1

2

5

°

C

7

5

°

C

2

5

°

C

3

0

°

C

1

2

3

8

7

9

4

11

6

10

5

12

PNP + NPN

H-bridge

0.01

I

C

  (A)

0.1

1

0.5

4

0.05

20

100

50

500

h

FE

(V

CE

=4V)

Ta=125

°

C

75

°

C

25

°

C

–30

°

C

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

(T

a

=25

°

C)

Symbol

Unit

V

CBO

60

–60

V

V

CEO

60

–60

V

V

EBO

6

–6

V

I

C

4

–4

A

I

CP

6 (PW

1ms, D

u

50%)

–6 (PW

1ms, D

u

50%)

A

I

B

1

–1

A

5 (T

a

=25

°

C)

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j-c

 5

°

C/W

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

27

Characteristic curves

SLA4310

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=60V

–10

µ

A

V

CB

=–60V

I

EBO

10

µ

A

V

EB

=6V

–10

µ

A

V

EB

=–6V

V

CEO

60

V

I

C

=25mA

–60

V

I

C

=–25mA

h

FE

80

V

CE

=4V, I

C

=1A

80

V

CE

=–4V, I

C

=–1A

V

CE

(sat)

0.6

V

I

C

=2A, I

B

=0.2A

–0.6

V

I

C

=–2A, I

B

=–0.2A

1.0

0.05

 I

C

  (A)

0.5

0

0.1

0.5

1

V

CE 

(sat) 

• V

BE  

(sat) (V)

3

V

BE 

(sat)

V

CE 

(sat)

(I

C

 / I

B

=10)

0.005

I

B

  (A)

0.1

1

0.5

0.05

0.01

0

1.0

0.5

1.5

V

CE

  (sat) (V)

I

C

=3A

2A

1A

20

10

5

1

0.5

5

1

10

100

1000

500

50

PW  (mS)

θ

j–

a  (

°

C / W)

25

20

15

10

5

0
–40

0

50

100

150

Ta  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2

5

V

CE

  (V)

10

50

100

1

5

0.05

0.1

0.5

10

I

C

  (A)

3

1ms

10ms

Single Pulse

Without Heatsink

T=25

°

C

–1.0

 V

CE

(sat) 

• V

BE

(sat) (V)

(I

C

 / I

B

=10)

–0.05

–0.5

0

–0.1

–0.5

–1

–3

I

C

  (A)

V

BE 

(sat)

V

CE 

(sat)

–0.005

I

B

  (A)

–0.1

–1

–0.5

–0.05

–0.01

0

–1.0

–0.5

–1.5

V

CE

  (sat) (V)

I

C

=3A

2A

1A

–5

V

CE

  (V)

–10

–50

–100

–1

–5

–0.05

–0.1

–0.5

–10

I

C

  (A)

–3

1m

s

10m

s

Single Pulse
Without Heatsink
T

a

=25

°

C

Electrical characteristics

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

θ

j-a

-PW Characteristics

V

CE

(sat) • V

BE

(sat)-I

C

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

28

Characteristic curves

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

SLA4340

P

T

W

Ratings

NPN

PNP

6

4

2

0

0

2

4

6

I

C

  (A)

V

CE

  (V)

I

B

=4.0mA

2.0mA

1.2mA

0.8mA

0.6mA

0.5mA

0.4mA

0.03

 h

FE

 I

C

  (A)

10000

1000

500

100

50

0.1

0.5

1

5 6

5000

typ

(V

CE

=4V)

0.03

10000

1000

500

100

0.1

0.5

1

5 6

50

5000

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

 I

C

  (A)

 h

FE

(V

CE

=4V)

6

5

4

3

2

1

0

0

1

2

3

T

a

=

1

2

5

°

C

3

0

°

C

75

°

C

25

°

C

V

BE

  (V)

I

C

  (A)

(V

CE

=4V)

–6

–4

–2

0

0

–2

–4

–6

I

C

  (A)

V

CE

  (V)

–1.5mA

–1.2mA

–1.0mA

–0.9mA

–0.8mA

–1.8mA

I

B

=

–2.2mA

–0.03

10000

1000

500

100

50

–0.1

–0.5

–1

–5 –6

5000

typ

 I

C

  (A)

 h

FE

(V

CE

=–4V)

–0.03

10000

1000

500

100

50

–0.1

–0.5

–1

–5 –6

5000

T

a

=125

°

C

–30

°

C

75

°

C

25

°

C

 I

C

  (A)

 h

FE

(V

CE

=–4V)

–6

–5

–4

–3

–2

–1

0

0

–1

–2

–3

T

a

=

1

2

5

°

C

3

0

°

C

75

°

C

25

°

C

V

BE

  (V)

I

C

  (A)

(V

CE

=–4V)

R

1

: 3k

Ω 

typ  R

2

: 200

Ω 

typ  R

3

: 3k

Ω 

typ  R

4

: 150

Ω 

typ

8

9

R

3

R

4

12

11

7

2

4

1

5

6

R

1

R

2

PNP + NPN Darlington

H-bridge

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

(T

a

=25

°

C)

Symbol

Unit

V

CBO

60

–60

V

V

CEO

60

–60

V

V

EBO

6

–6

V

I

C

4

–4

A

I

CP

6 (PW

1ms, D

u

50%)

–6 (PW

1ms, D

u

50%)

A

I

B

0.5

–0.5

A

5 (T

a

=25

°

C)

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j-c

 5

°

C/W

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

29

Characteristic curves

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

θ

j-a

-PW Characteristics

V

CE

(sat)-I

C

 Temperature Characteristics (Typical)

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SLA4340

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=60V

–10

µ

A

V

CB

=–60V

I

EBO

10

mA

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

60

V

I

C

=10mA

–60

V

I

C

=–10mA

h

FE

2000

V

CE

=4V, I

C

=3A

2000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

1.5

V

I

C

=3A, I

B

=6mA

–1.5

V

I

C

=–3A, I

B

=–6mA

3

0.5

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

2

1

0

1

5

6

T

a

=125

°

C

75

°

C

2

5

°

C

–30

°

C

3

V

CE

  (sat) (V)

0.2

0.5

1

5

10

50

100

2

1

I

C

=1A

I

C

=2A

I

C

=4A

0

I

B

  (mA)

20

10

5

1

0.5

5

1

10

100

1000

500

50

PW  (mS)

θ

j–

a  (

°

C / W)

25

20

15

10

5

0
–40

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2

10

3

 

I

C

  (A)

V

CE

  (V)

5

1

0.5

0.1

0.05

0.03

5

10

50

100

Single Pulse
Without Heatsink
T

a

=25

°

C

1m

s

10ms

–3

–0.5

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

–2

–1

0

–1

–5 –6

125

°

C

25

°

C

75

°

C

T

a

=–30

°

C

–3

V

CE

  (sat) (V)

I

B

  (mA)

–0.2

–0.5

–1

–5

–10

–50 –100

–2

–1

0

I

C

=–4A

I

C

=–2A

I

C

=–1A

–10

–3

I

C

  (A)

–5

–1

–0.5

–0.1

–0.05

–0.03

–5

–10

–50

–100

Single Pulse
Without Heatsink
T

a

=25

°

C

1m

s

10ms

V

CE

  (V)

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

30

Characteristic curves

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

SLA4390

8

9

R

3

R

4

12

11

7

2

4

1

5

6

R

1

R

2

R

1

: 2.5k

Ω 

typ  R

2

: 200

Ω 

typ  R

3

: 3k

Ω 

typ  R

4

: 100

Ω 

typ

P

T

W

Ratings

NPN

PNP

8

I

C

  (A)

7

6

5

4

3

2

1

0

0

1

2

3

4

5

I

B

=2mA

1mA

0.8mA

0.7mA

0.6mA

0.5m

A

0.4mA

 V

CE

  (V)

20000

10000

5000

1000

500

100

50

30

0.03

0.1

0.5

1

5

8

typ

 I

C

  (A)

 h

FE

(V

CE

=4V)

20000

10000

5000

1000

500

100

50

30

0.03

0.1

0.5

1

5

8

T

a

=1

25

°

C

75

°

C

–30

°

C

0.05

25

°

C

 I

C

  (A)

 h

FE

(V

CE

=4V)

–8

I

C

  (A)

V

CE

  (V)

–7

–6

–5

–4

–3

–2

–1

0

0

–1

–2

–3

–4

–5

I

B

=–4mA

–2mA

–1.2mA

–0.8mA

–0.6mA

–0.4mA

(V

CE

=–4V)

20000

10000

5000

1000

500

100

50

30

–0.03

–0.1

–0.5

–1

–5

h

FE

I

C

  (A)

–8

typ

–0.05

20000

10000

5000

1000

500

100

50

30

–0.03

–0.1

–0.5

–1

–5

–8

T

a

=125

°

C

–30

°

C

75

°

C

25

°

C

(V

CE

=–4V)

h

FE

I

C  

(A)

(V

CE

=–4V)

–8

I

C

  (A)

V

BE

  (V)

–6

–4

–2

0

0

–1

–2

–3

T

a

=125

°

C

75

°

C

25

°

C

3

0

°

C

PNP + NPN Darlington

H-bridge

(V

CE

=4V)

8

I

C

  (A)

V

BE

  (V)

6

4

2

0

0

1

2

3

T

a

=125

°

C

30

°

C

2

5

°

C

7

5

°

C

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

(T

a

=25

°

C)

Symbol

Unit

V

CBO

100

–100

V

V

CEO

100

–100

V

V

EBO

6

–6

V

I

C

5

–5

A

I

CP

8 (PW

1ms, D

u

50%)

–8 (PW

1ms, D

u

50%)

A

I

B

0.5

–0.5

A

5 (T

a

=25

°

C)

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j-c

 5

°

C/W

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

31

Characteristic curves

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

θ

j-a

-PW Characteristics

V

CE

(sat)-I

C

 Temperature Characteristics (Typical)

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SLA4390

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=100V

–10

µ

A

V

CB

=–100V

I

EBO

10

mA

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

100

V

I

C

=10mA

–100

V

I

C

=–10mA

h

FE

2000

V

CE

=4V, I

C

=3A

2000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

1.5

V

I

C

=3A, I

B

=6mA

–1.5

V

I

C

=–3A, I

B

=–6mA

3

0.2

0.5

2

1

0

1

5

10

50

I

C

=3A

I

C

=1A

I

C

=5A

V

CE

  (sat) (V)

I

B

  (mA)

3

0.3

0.5

2

1

0

1

5

8

T

a

=125

°

C

25

°

C

–30

°

C

75

°

C

V

CE

  (sat) (V)

 I

C

  (A)

(I

C

 / I

B

=1000)

20

10

5

1

0.5

1

5

10

50 100

500 1000

PW  (mS)

θ

j–

a

  (

°

C / W)

25

20

15

10

5

0
–40

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

Without Heatsink

10

0

×

10

0

×

2

50

×

50

×

2

10

5

5

1

0.5

0.1

0.05

0.03

100

50

10

3

Single Pulse
Without Heatsink
T

a

=25

°

C

10ms

1ms

100

µ

s

V

CE

  (V)

I

C

  (A)

–3

–0.2

–0.5

V

CE

  (sat) (V)

I

B

  (mA)

–2

–1

0

–1

–5

–10

–50 –100

–500

I

C

=–3A

I

C

=–5A

I

C

=–1A

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

–3

–0.3

–0.5

–2

–1

0

–1

–5

–8

125

°

C

75

°

C

25

°

C

T

a

=–30

°

C

–10

–5

I

C

  (A)

V

CE

  (V)

–5

–1

–0.5

–0.1

–0.05

–0.03

–100

–50

–10

–3

Single Pulse
Without Heatsink
T

a

=25

°

C

10

m

s

1m

s

100

µ

s

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

32

Characteristic curves

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

SLA4391

1

R

3

R

4

3

2

10

11

12

5

R

1

R

2

4

6

9

7

8

R

1

: 2.5k

Ω 

typ  R

2

: 200

Ω 

typ  R

3

: 3k

Ω 

typ  R

4

: 100

Ω 

typ

(T

a

=25

°

C)

Symbol

Unit

V

CBO

100

–100

V

V

CEO

100

–100

V

V

EBO

6

–6

V

I

C

5

–5

A

I

CP

8 (PW

1ms, D

u

50%)

–8 (PW

1ms, D

u

50%)

A

I

B

0.5

–0.5

A

I

F

5 (PW

0.5ms, D

u

25%)

A

I

FSM

8 (PW

10ms, single)

A

V

R

120

V

5 (T

a

=25

°

C)

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

 –40 to +150

°

C

θ

j-c

5

°

C/W

P

T

W

Ratings

NPN

PNP

8

I

C

  (A)

7

6

5

4

3

2

1

0

0

1

2

3

4

5

I

B

=2mA

1mA

0.8mA

0.7m

A

0.6m

A

0.5mA

0.4mA

 V

CE

  (V)

20000

10000

5000

1000

500

100

50

30

0.03

0.1

0.5

1

5

8

typ

(V

CE

=4V)

h

FE

I

C

  (A)

20000

10000

5000

1000

500

100

50

30

0.03

0.1

0.5

1

5

8

T

a

=125

°

C

–30

°

C

75

°

C

25

°

C

(V

CE

=4V)

h

FE

I

C

  (A)

8

6

4

2

0

0

1

2

3

T

a

=

125

°

C

75

°

C

2

5

°

C

30

°

C

(V

CE

=4V)

I

C

  (A)

V

BE

  (V)

–8

I

C

  (A)

V

CE

  (V)

–7

–6

–5

–4

–3

–2

–1

0

0

–1

–2

–3

–4

–5

I

B

=–4mA

–2mA

–1.2mA

–0.8mA

–0.6mA

–0.4mA

20000

10000

5000

1000

500

100

50

30

–0.03

–0.1

–0.5

–1

–5

–8

typ

(V

CE

=–4V)

h

FE

I

C

  (A)

20000

10000

5000

1000

500

100

50

30

–0.03

–0.1

–0.5

–1

–5

–8

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

(V

CE

=–4V)

h

FE

I

C  

(A)

–8

–6

–4

–2

0

0

–1

–2

–3

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

(V

CE 

=–4V)

I

C

  (A)

V

BE

  (V)

PNP + NPN Darlington

H-bridge

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

33

Characteristic curves

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

θ

j-a

-PW Characteristics

V

CE

(sat)-I

C

 Temperature Characteristics (Typical)

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=100V

SLA4391

Specification

min

typ

max

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=100V

–10

µ

A

V

CB

=–100V

I

EBO

10

mA

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

100

V

I

C

=10mA

–100

V

I

C

=–10mA

h

FE

1000

V

CE

=4V, I

C

=3A

1000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

1.5

V

I

C

=3A, I

B

=6mA

–1.5

V

I

C

=–3A, I

B

=–6mA

3

0.2

0.5

2

1

0

1

5

10

50

I

C

=3A

I

C

=1A

I

C

=5A

V

CE

  (sat) (V)

I

B

  (mA)

3

0.3

0.5

2

1

0

1

5

8

T

a

=125

°

C

75

°

C

–30

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

25

°

C

20

10

5

1

0.5

1

5

10

50 100

500 1000

PW  (mS)

θ

j–

a

  (

°

C / W)

25

20

15

10

5

0
–40

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

W

ith Infinite H

eatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2

10

5

5

1

0.5

0.1

0.05

0.03

100

50

10

3

Single Pulse
Without Heatsink
T

a

=25

°

C

10ms

1ms

1

0

0

µ

s

I

C

  (A)

V

CE

  (V)

–3

–0.2

–0.5

–2

–1

0

–1

–5

–10

–50 –100

–500

I

C

=–3A

I

C

=–5A

I

C

=–1A

V

CE

  (sat) (V)

I

B

  (mA)

–3

–0.3

–0.5

–2

–1

0

–1

–5

–8

125

°

C

75

°

C

25

°

C

T

a

=–30

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

–10

–5

–5

–1

–0.5

–0.1

–0.05

–0.03

–100

–50

–10

–3

Single Pulse
Without Heatsink
T

a

=25

°

C

10ms

1ms

100

µ

s

I

C

  (A)

V

CE

  (V)

Electrical characteristics

Diode for flyback voltage absorption

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

34

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5001

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

I

DSS

250

µ

A

V

DS

=100V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

2.4

3.7

S

V

DS

=10V, I

D

=5A

R

DS(

ON

)

0.27

0.30

V

GS

=10V, I

D

=5A

Ciss

350

pF

V

DS

=25V, f=1.0MHz,

Coss

130

pF

V

GS

=0V

t

on

60

ns

I

D

=5A, V

DD

50V,V

GS

=10V,

t

off

40

ns

see Fig. 3 on page 16.

V

SD

1.1

1.8

V

I

SD

=5A, V

GS

=0V

t

rr

330

ns

I

SD

=

±

100mA

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

100

V

V

GSS

±

20

V

I

D

±

5

A

I

D(

pulse

)

±

10(

PW

1ms

)

A

E

AS

*

30

mJ

5 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

35 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

–40 to +150

°

C

*

 : V

DD

=20V, L=10mH, I

D

=2.5A, unclamped, see Fig. E on page 15.

P

T

1

2

3

5

4

6

8

9

7

12

11

10

0

2

10

10

6

0

V

GS

=4V

6V

V

DS

  (V)

I

D

  (A)

4

6

8

4

2

8

7V

5V

10V

25

°

C

125

°

C

0

2

4

6

8

T

C

=–40

°

C

10

6

0

4

2

8

(V

DS

=10V)

V

GS

  (V)

I

D

  (A)

(V

GS

=10V)

0

0

2

0.1

0.2

0.3

0.4

 I

D

  (A)

R

DS  (ON)

 (

)

4

6

8

10

0.3

0.05

0.5

1

1

5

7

(V

DS

=10V)

I

D

  (A)

Re  (yfs) (S)

5

10

0.5

0.1

25

°

C

125

°

C

T

C

=–40

°

C

–40

0

0

50

100

150

0.2

0.3

0.4

0.5

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.1

I

D

=5A

V

GS

=10V

0

10

20

30

40

50

50

100

1000

Ciss

Coss

Crss

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

0

1.0

1.5

5V

 I

DR

  (A)

V

SD

  (V)

0.5

10

V

10

6

0

4

2

8

V

G

S

=

 0V

0.5

0.1

1

5

10

50

100

1

10

20

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

10

ms (1shot)

R

DS (ON)

 I

D

  (A)

V     (V)

DS

0.5

5

LIMITED      

100

µ

s

25

30

35

40

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

W

ith In

finite H

eatsink

Without Heatsink

N-channel

General purpose

Electrical characteristics

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

35

Characteristic curves

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

I

DSS

250

µ

A

V

DS

=100V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

2.4

3.7

S

V

DS

=10V, I

D

=5A

R

DS(

ON

)

0.27

0.30

V

GS

=10V, I

D

=5A

Ciss

350

pF

V

DS

=25V, f=1.0MHz,

Coss

130

pF

V

GS

=0V

t

on

60

ns

I

D

=5A, V

DD

50V,V

GS

=10V,

t

off

40

ns

 see Fig. 3 on page 16.

V

SD

1.1

1.8

V

I

SD

=5A, V

GS

=0V

t

rr

330

ns

I

SD

=

±

100mA

SLA5002

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

100

V

V

GSS

±

20

V

I

D

±

5

A

I

D(

pulse

)

±

10 (

PW

1ms

)

A

E

AS

*

30

mJ

I

F

5 (

PW

0.5ms, Du

25%

)

A

I

FSM

10 (

PW

10ms, Single Pulse

)

A

V

R

120

V

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

–40 to +150

°

C

*

 : V

DD

=20V, L=10mH, I

D

=2.5A, unclamped, see Fig. E on page 15

P

T

Specification

min

typ

max

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.0

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

Specification

min

typ

max

1

2

5

4

6

3

8

9

12

11

10

7

0

2

10

10

6

0

V

DS

  (V)

I

D

  (A)

4

6

8

4

2

8

5V

6V

7V

10V

V

GS

=4V

0

2

4

6

8

 I

D

  (A)

V

GS

  (V)

10

6

0

4

2

8

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

2

0.1

0.2

0.3

0.4

I

D

  (A)

R

DS  (ON)

 (

)

4

6

8

10

(V

GS

=10V)

0.3

0.05

0.5

1

1

5

7

I

D

  (A)

Re  (yfs) (S)

5

10

0.5

0.1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

–40

0

0

50

100

150

0.2

0.3

0.4

0.5

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.1

I

D

=5A

V

GS

=10V

0

10

20

30

40

50

50

100

1000

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

Ciss

Crss

Coss

0

1.0

1.5

 I

DR

  (A)

V

SD

  (V)

0.5

10

6

0

4

2

8

5V

10

V

V

G

S

=

0

V

0.5

0.1

1

5

10

50

100

1

10

20

 I

D

  (A)

V

DS

  (V)

0.5

5

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

10

ms (1shot)

R

DS  (ON)

LIMITED      

100

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

N-channel

With built-in flywheel diode

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Diode for flyback voltage absorption

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

36

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5003

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

200

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

I

DSS

250

µ

A

V

DS

=200V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

1.3

2.5

S

V

DS

=10V, I

D

=5A

R

DS(ON)

0.67

0.9

V

GS

=10V, I

D

=5A

Ciss

260

pF

V

DS

=25V, f=1.0MHz,

Coss

100

pF

V

GS

=0V

t

on

50

ns

I

D

=5A, V

DD

100V,V

GS

=10V,

t

off

60

ns

 see Fig. 3 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

t

rr

700

ns

I

SD

=

±

100mA

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

200

V

V

GSS

±

20

V

I

D

±

5

A

I

D(

pulse

)

±

10 

(PW

1ms

)

A

E

AS

*

60

mJ

I

F

5(

PW

0.5ms, Du

25%

)

A

I

FSM

10(

PW

10ms, Single pulse

)

A

V

R

200

V

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

*

 : V

DD

=20V, L=10mH, I

D

=3.5A, unclamped, see Fig. E on page 15.

P

T

Specification

min

typ

max

Symbol

Unit

Conditions

V

R

200

V

I

R

=10

µ

A

1.0

1.2

V

I

F

=1A

1.5

2.0

V

I

F

=5A

I

R

10

µ

A

V

R

=200V

t

rr

100

ns

I

F

=

±

100mA

Specification

min

typ

max

V

F

1

2

5

4

6

3

8

9

12

11

10

7

0

5

20

8

6

0

V

DS

  (V)

I

D

  (A)

10

15

4

2

6V

7V

10V

V

GS

=5V

0

2

4

6

8

 I

D

  (A)

V

GS

  (V)

8

6

0

4

2

10

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

1

2

3

0.5

1.0

1.5

I

D

  (A)

R

DS  (ON)

 (

)

4

5

6

7

8

(V

GS

=10V)

0.2

0.05

0.5

1

1

5

I

D

  (A)

Re  (yfs) (S)

5

10

0.5

0.1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

–40

0

0

50

100

150

1.0

1.5

2.0

2.5

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.5

I

D

=5A

V

GS

=10V

0

10

20

30

40

50

5

50

100

1000

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

1.0

1.5

I

DR

  (A)

V

SD

  (V)

0.5

8

6

0

4

2

5V

10V

V

GS

=0V

3

0.03

5

10

200

1

5

20

I

D

  (A)

V

DS

  (V)

0.5

0.1

0.05

50

100

10

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

10

ms

  (1

sho

t)

R

DS

  (

ON

)

LIMITED      

100

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

N-channel

With built-in flywheel diode

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Diode for flyback voltage absorption (1 circuit)

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

37

Characteristic curves

SLA5004

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

–60

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

500

nA

V

GS

= 20V

I

DSS

–250

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(

yfs

)

2.3

3.5

S

V

DS

=–10V, I

D

=–5A

R

DS(ON)

0.22

0.30

V

GS

=–10V, I

D

=–5A

Ciss

570

pF

V

DS

=–25V, f=1.0MHz,

Coss

360

pF

V

GS

=0V

t

on

100

ns

I

D

=–5A, V

DD

–30V,V

GS

=–10V,

t

off

60

ns

 see Fig. 4 on page 16.

V

SD

–4.5

–5.5

V

I

SD

=–5A

t

rr

150

ns

I

SD

=   100mA

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

–60

V

V

GSS

20

V

I

D

5

A

I

D(

pulse

)

     10 (

PW

1ms

)

A

5

 (Ta=25

°

C, with all circuits operating, without heatsink)

W

35

 (Tc=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

j-a

25

 (

J

unction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

3.57

 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

–40 to +150

°

C

P

T

1

3

2

5

6

4

8

7

9

12

10

11

0

---2

---10

-–10

---6

0

V

DS

  (V)

 I

D

  (A)

---4

---6

---8

---2

---4

---8

–5V

–6V

–7V

–10V

V

GS

=–4V

 I

D

  (A)

V

GS

  (V)

0

---2

---4

---6

---8

---10

---6

0

---2

---4

---8

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

---2

0.05

0.15

0.20

0.25

I

D

  (A)

R

DS  (ON)

 (

)

---4

---6

---8

0.10

---10

(V

GS

=–10V)

0.3

---0.5

---1

1

8

I

D

  (A)

Re  (yfs) (S)

---5

---10

0.5

---0.1

5

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

---40

0

0

50

100

150

0.2

0.3

0.4

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.1

I

D

=–5A

V

GS

=–10V

0

---10

---20

---30

---40

---50

50

100

2000

V

DS

  (V)

Capacitance  (pF)

1000

30

500

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

I

DR

  (A)

V

SD

  (V)

–1

–2

–4

–10

–6

0

–2

–4

–8

–5V

1

0

V

V

G

S

=0V

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

W

ith Infinite H

eatsink

Without Heatsink

---0.5

---0.1

---1

---5

---10

---50 ---100

---1

---5

---10

I

D

  (A)

V

DS

  (V)

---0.5

---20

(T

C

=25

°

C)

I

D

  (pulse)  max

1m

s

10

m

s  (1

sh

ot)

R

DS  (ON)

LIM

IT

E

D

      

10

0

µ

s

P-channel

General purpose

Absolute maximum ratings

Electrical characteristics

±

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

38

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5005

(T

a

=25

°

C)

Symbol

Unit

Condition

V

(BR)DSS

–100

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

500

nA

V

GS

= 20V

I

DSS

–250

µ

A

V

DS

=–100V, V

GS

=0V

V

TH

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(

yfs

)

0.9

2.0

S

V

DS

=–10V, I

D

=–5A

R

DS(ON)

0.55

0.7

V

GS

=–10V, I

D

=–5A

Ciss

300

pF

V

DS

=–25V, f=1.0MHz,

Coss

200

pF

V

GS

=0V

t

on

150

ns

I

D

=–5A, V

DD

–50V, V

GS

=–10V,

t

off

200

ns

see Fig. 4 on page 16.

V

SD

–4.5

–5.5

V

I

SD

=–5A, V

GS

=0V

t

rr

220

ns

I

SD

= 100mA

Specifications

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

–100

V

V

GSS

    20

V

I

D

    5

A

I

D(

pulse

)

10 (

PW

1ms

)

A

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

1

3

2

5

6

4

8

7

9

12

10

11

0

–2

–10

V

DS

  (V)

 I

D

  (A)

–4

–6

–8

–8

–6

0

–2

–4

–10

–5V

–6V

–7V

–10V

V

GS

=–4V

I

D

  (A)

V

GS

  (V)

0

–2

–10

–4

–6

–8

–8

–6

0

–2

–4

–10

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

---2

0.2

0.6

0.8

1.0

I

D

  (A)

R

DS  (ON)

 (

)

---4

---6

---8

0.4

---10

(V

GS

=–10V)

0.3

---0.5

---1

1

5

I

D

  (A)

Re  (yfs) (S)

---5

---10

0.5

---0.1

---0.05

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

---40

0

0

50

100

150

0.6

0.8

1.2

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.2

1.0

0.4

I

D

=–5A

V

GS

=–10V

0

---10

---20

---30

---40

---50

50

100

1000

V

DS

  (V)

Capacitance  (pF)

500

20

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

---3

I

DR

  (A)

V

SD

  (V)

---1

---10

---6

0

---4

---2

---2

---4

---8

–5V

–1

0V

V

GS

=0V

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

---0.5

---0.1

–1

---5

---10

---50

---100

---1

---5

---20

I

D

  (A)

V

DS  

(V)

---0.5

---10

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

10

ms  (1shot)

R

D

S

  (

O

N

)

LIMITED      

100

µ

s

P-channel

General purpose

Equivalent circuit diagram

Electrical characteristics

Absolute maximum ratings

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

39

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

–100

V

V

GSS

   20

V

I

D

   5

A

I

D(

pulse

)

    10(

PW

1ms

)

A

I

F

5(

PW

0.5ms, Du

25%

)

A

I

FSM

10(

PW

10ms, Single pulse

)

A

V

R

120

V

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

SLA5006

(T

a

=25

°

C)

Symbol

Unit

Condition

V

(BR)DSS

–100

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

500

nA

V

GS

= 20V

I

DSS

–250

µ

A

V

DS

=–100V, V

GS

=0V

V

TH

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(

yfs

)

0.9

2.0

S

V

DS

=–10V, I

D

=–5A

R

DS(ON)

0.55

0.7

V

GS

=–10V, I

D

=–5A

Ciss

300

pF

V

DS

=–25V, f=1.0MHz,

Coss

200

pF

V

GS

=0V

t

on

150

ns

I

D

=–5A, V

DD

–50V, V

GS

=–10V,

t

off

200

ns

 see Fig. 4 on page 16.

V

SD

–4.5

–5.5

V

I

SD

=–5A, V

GS

=0V

t

rr

220

ns

I

SD

=  100mA

P

T

Specification

min

typ

max

Symbol

Unit

Condition

V

R

120

V

I

R

=10

µ

A

V

F

1.0

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=  100mA

Specification

min

typ

max

7

6

1

5

8

11

10

9

4

3

2

12

0

–2

–10

V

DS

  (V)

I

D

  (A)

–4

–6

–8

–8

–6

0

–2

–4

–10

–5V

–6V

–7V

–10V

V

GS

=–4V

I

D

  (A)

 V

GS

  (V)

0

–2

–10

–4

–6

–8

–8

–6

0

–2

–4

–10

(V

DS

=–10V)

2

5

°

C

125

°

C

T

C

=

40

°

C

0

0

---2

0.2

0.6

0.8

1.0

I

D

  (A)

R

DS  (ON)

 (

)

---4

---6

---8

0.4

---10

(V

GS

=–10V)

0.3

---0.5

---1

1

5

I

D

  (A)

Re  (yfs) (S)

---5

---10

0.5

---0.1

---0.05

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

–40

0

0

50

100

150

0.6

0.8

1.2

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.2

1.0

0.4

I

D

=–5A

V

GS

=–10V

0

---10

---20

---30

---40

---50

50

100

1000

V

DS

  (V)

Capacitance  (pF)

500

20

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

---3

I

DR

  (A)

V

SD

  (V)

---1

---10

---6

0

---4

---2

---2

---4

---8

–5V

–10V

V

G

S

=0V

---0.5

---0.1

---1

---5

---10

---50 ---100

---1

---5

---20

I

D

  (A)

V

DS

  (V)

---0.5

---10

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

LIM

ITED

      

100

µ

s

10

ms  (1shot)

R

D

S  (O

N

)

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

W

ith

 In

fin

ite

 H

ea

tsin

k

Without Heatsink

P-channel

With built-in flywheel diode

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Diode for flyback voltage absorption

±

±

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

40

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

SLA5007

12

10

11

1

2

3

7

9
4

6

8

5

Pch

Nch

(T

a

=25

°

C)

Symbol

Unit

V

DSS

60

–60

V

V

GSS

±

20

20

V

I

D

±

5

4

A

I

D(pulse)

±

10 (PW

1ms)

  8 (PW

1ms)

A

E

AS

*

2

mJ

5 (Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (Tc=25

°

C,with all circuits operating, with infinite heatsink)

W

θ

j-a

25 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

3.57 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

–40 to +150

°

C

*

 : V

DD

=20V, L=1mH, I

D

=2A, unclamped,  see Fig. E on page 15.

P

T

Ratigs

N channel

P channel

0

2

10

10

8

2

0

V

DS

  (V)

I

D

  (A)

4

6

8

6

4

V

GS

=4V

6V

7V

5V

10V

0

0

2

4

10

0.05

0.10

0.15

0.20

I

D

  (A)

R

DS  (ON)

 (

)

6

8

(V

GS

=10V)

--- 40

0

0

50

100

150

0.1

0.2

0.3

R

DS  (ON)

 (

)

T

C

  (

°

C)

I

D

=5A

V

GS

=10V

6

0

8

10

0

2

4

8

 I

D

  (A)

V

GS

  (V)

4

2

6

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

–2

–10

–8

–6

0

V

DS

  (V)

I

D

  (A)

–4

–6

–8

–2

–4

–6V

–5V

–7V

–10V

V

GS

=–4V

0

0

---2

0.2

0.4

0.5

0.6

I

D

  (A)

R

DS  (ON)

 (

)

---4

---6

---8

0.3

0.1

(V

GS

=–10V)

---40

0

0

50

100

150

0.6

0.8

1.0

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.4

0.2

I

D

=–4A

V

GS

=–10V

I

D

  (A)

 V

GS

  (V)

0

–2

–10

–4

–6

–8

–8

–6

0

–2

–4

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

N-channel + P-channel

H-bridge

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

41

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5007

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

60

V

I

D

=250

µ

A, V

GS

=0V

–60

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

500

nA

V

GS

= 20V

I

DSS

250

µ

A

V

DS

=60V, V

GS

=0V

–250

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

2.2

3.3

S

V

DS

=10V, I

D

=5A

1.6

2.2

S

V

DS

=–10V, I

D

=–4A

R

DS(ON)

0.17

0.22

V

GS

=10V, I

D

=5A

0.38

0.55

V

GS

=–10V, I

D

=–4A

Ciss

300

pF

V

DS

=25V, f=1.0MHz,

270

pF

V

DS

=–25V, f=1.0MHz,

Coss

160

pF

V

GS

=0V

170

pF

V

GS

=0V

t

on

35

ns

I

D

=5A, V

DD

30V,V

GS

=10V

60

ns

I

D

=–4A, V

DD

–30V,V

GS

=10V,

t

off

35

ns

see Fig. 3 on page 16.

60

ns

see Fig. 4 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

–4.4

–5.5

V

I

SD

=–4A, V

GS

=0V

t

rr

140

ns

I

SD

=

±

100mA

150

ns

I

SD

=  100mA

0.3

0.08

0.5

1

1

5

10

I

D

  (A)

 Re  (yfs) (S)

5

10

0.5

(V

DS

=10V)

25

°

C

T

C

=–

40

°

C

125

°

C

0

10

20

30

40

50

10

100

1000

V

DS

  (V)

Capacitance  (pF)

500

50

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0

1.0

1.5

2

8

10

I

DR

  (A)

 V

SD

  (V)

0.5

4

6

5V

10V

V

GS

=0V

0.5

0.1

1

5

10

50

100

0.5

1

5

10

20

 I

D

  (A)

V

DS

  (V)

(T

C

=25

°

C)

I

D

  (pulse)  max

1m

s

LIMITED

10

m

s  (1sho

t)

R

DS  (ON)

10

0

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

0.3

---0.5

---1

1

5

I

D

  (A)

Re  (yfs) (S)

---5

---8

0.5

---0.1

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–

40

°

C

0

---10

---20

---30

---40

---50

50

100

700

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

–5

 I

DR

  (A)

V

SD

  (V)

–1

–8

–6

0

–4

–2

–2

–4

–5V

–10V

V

GS

=0V

---0.5

---0.1

---1

---5

---10

---50 ---100

---1

---5

---10

I

D

  (A)

V

DS

  (V)

---0.5

I

D

  (pulse)  max

1m

s

10

ms  (1shot)

R

DS  (ON)

LIM

ITED

100

µ

s

(T

C

=25

°

C)

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

42

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

(T

a

=25

°

C)

Symbol

Unit

V

DSS

100

–100

V

V

GSS

±

20

20

V

I

D

±

4

3

A

I

D(pulse)

±

8 (PW

1ms)

6 (PW

1ms)

A

E

AS

*

15

mJ

5 (Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (Tc=25

°

C,with all circuits operating, with infinite heatsink)

W

θ

j-c

3.57

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

*

 : V

DD

=20V, L=1mH, I

D

=5A, unclamped, see Fig. E on page 15.

SLA5008

12

10

11

1

2

3

7

9
4

6

8

5

Pch

Nch

P

T

Ratings

N channel

P channel

0

20

8

7

3

0

V

DS

  (V)

I

D

  (A)

10

6

5

4

2

1

V

GS

=5V

6V

7V

10V

0

0

1

2

8

0.2

0.4

0.6

0.8

I

D

  (A)

R

DS  (ON)

 (

)

3

4

5

6

7

(V

GS

=10V)

--- 40

0

0

50

100

150

0.2

0.8

1.0

1.2

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.6

0.4

I

D

=4A

V

GS

=10V

0

2

4

6

10

 I

D

  (A)

V

GS

  (V)

8

8

7

3

0

6

5

4

2

1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=

40

°

C

0

–5

–20

V

DS

  (V)

I

D

  (A)

–10

–15

–6

0

–1

–3

–5

–4

–2

–6V

–7V

–10V

V

GS

=–5V

0

0

–2

1.0

1.5

I

D

  (A)

R

DS  (ON)

 (

)

–3

–4

–6

0.5

–5

–1

(V

GS

=–10V)

–40

0

0

50

100

150

1.5

2.0

R

DS  (ON)

 (

)

T

C

  (

°

C)

1.0

0.5

I

D

=–3A

V

GS

=–10V

I

D

  (A)

V

GS

  (V)

0

–2

–10

–4

–6

–8

–6

0

–1

–3

–5

–4

–2

(V

DS

=–10V)

2

5

°

C

125

°

C

T

C

=

40

°

C

N-channel + P-channel

H-bridge

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

43

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5008

(T

a

=25

°

C)

N channel

P channel

Symbol

Specifications

Unit

Conditions

Specifications

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

100

V

I

D

=250

µ

A, V

GS

=0V

–100

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

  500

nA

V

GS

= 20V

I

DSS

250

µ

A

V

DS

=100V, V

GS

=0V

–250

µ

A

V

DS

=–100V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

1.1

1.7

S

V

DS

=10V, I

D

=4A

0.7

1.1

S

V

DS

=–10V, I

D

=–3A

R

DS(ON)

0.50

0.60

V

GS

=10V, I

D

=4A

1.1

1.3

V

GS

=–10V, I

D

=–3A

Ciss

180

pF

V

DS

=25V, f=1.0MHz,

180

pF

V

DS

=–25V, f=1.0MHz,

Coss

82

pF

V

GS

=0V

85

pF

V

GS

=0V

t

on

40

ns

I

D

=4A, V

DD

50V, V

GS

=–10V,

90

ns

I

D

=–3A, V

DD

–50V, V

GS

=–10V,

t

off

40

ns

 see Fig. 3 on page 16.

80

ns

 see Fig. 4 on page 16.

V

SD

1.2

2.0

V

I

SD

=4A

–4.0

–5.5

V

I

SD

=–3A

t

rr

250

ns

I

SD

=

±

100mA

250

ns

I

SD

= 100mA

0.2

0.05

0.5

1

1

5

I

D

  (A)

Re  (yfs) (S)

5

8

0.5

0.1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–

40

°

C

0

10

20

30

40

50

10

50

100

600

V

DS

  (V)

Capacitance  (pF)

5

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0

1.0

1.5

2

7

8

 I

DR

  (A)

V

SD

  (V)

0.5

1

3

4

6

5

5V

10V

V

G

S

=0V

0.5

0.1

1

5

10

50

100

1

5

10

I

D

  (A)

V

DS

  (V)

0.5

(T

C

=25

°

C)

I

D

  (pulse)  max

1m

s

10

ms  (1shot)

R

D

S

  (

O

N

)

LIMITED

100

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

0.2

–0.5

–1

1

5

I

D  

(A)

Re  (yfs) (S)

–6

0.5

–0.1

–0.05

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–

40

°

C

0

---10

---20

---30

---40

---50

50

100

700

V

DS

  (V)

Capacitance  (pF)

500

5

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

I

DR

  (A)

V

SD

  (V)

–1

---5

0

---3

–1

–2

–4

---6

---4

---2

–5

V

–10V

V

G

S

=0

V

---0.5

---0.1

---1

---5

---10

---50

---100

---1

---5

---10

 I

D

  (A)

 V

DS

  (V)

---0.5

(T

C

=25

°

C)

I

D

  (pulse)  max

1m

s

10

m

s  (1

sh

ot)

R

DS  (ON)

LIMITED

100

µ

s

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

44

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

SLA5009

2

4

3

8

6

5

7

9

11

12

10

1

Pch

Nch

(T

a

=25

°

C)

Symbol

Unit

V

DSS

60

–60

V

V

GSS

±

20

20

V

I

D

±

5

4

A

I

D(pulse)

±

10 (PW

1ms)

8 (PW

1ms)

A

E

AS

*

2

mJ

5 (Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (Tc=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

j-a

25 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

3.57 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

*

 : V

DD

=20V, L=1mH, I

D

=2A, unclamped, see Fig. E on page 15.

P

T

Ratings

N channel

P channel

0

2a

10

10

8

2

0

V

DS

  (V)

I

D

  (A)

4

6

8

6

4

V

GS

=V

6V

7V

5V

10V

0

0

2

4

10

0.05

0.10

0.15

0.20

I

D

  (A)

R

DS  (ON)

 (

)

6

8

(V

GS

=10V)

–40

0

0

50

100

150

0.1

0.2

0.3

R

DS  (ON)

 (

)

T

C

  (

°

C)

I

D

=5A

V

GS

=10V

6

0

8

10

0

2

4

8

I

D

  (A)

V     (V)

GS

4

2

6

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

–2

–10

–8

–6

0

V

DS

  (V)

I

D

  (A)

–4

–6

–8

–2

–4

–5V

–6V

–7V

–10V

V

GS

=–4V

0

0

–2

0.2

0.4

0.5

0.6

 I

D

  (A)

R

DS  (ON)

 (

)

–4

–6

–8

0.3

0.1

(V

GS

=–10V)

–40

0

0

0.6

0.8

1.0

0.4

0.2

50

100

150

R

DS  (ON)

 (

)

 T

C

  (

°

C)

I

D

=–4A

V

GS

=–10V

I

D

  (A)

V

GS

  (V)

0

–2

–10

–4

–6

–8

–8

–6

0

–2

–4

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

N-channel + P-channel

3-phase motor drive

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

45

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5009

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

60

V

I

D

=250

µ

A, V

GS

=0V

–60

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

500

nA

V

GS

= 20V

I

DSS

250

µ

A

V

DS

=60V, V

GS

=0V

–250

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

2.2

3.3

S

V

DS

=10V, I

D

=5A

1.6

2.2

S

V

DS

=–10V, I

D

=–4A

R

DS(ON)

0.17

0.22

V

GS

=10V, I

D

=5A

0.38

0.55

V

GS

=–10V, I

D

=–4A

Ciss

300

pF

V

DS

=25V, f=1.0MHz,

270

pF

V

DS

=–25V, f=1.0MHz,

Coss

160

pF

V

GS

=0V

170

pF

V

GS

=0V

t

on

35

ns

I

D

=5A, V

DD

30V, V

GS

=–10V,

60

ns

I

D

=–4A, V

DD

–30V, V

GS

=–10V,

t

off

35

ns

 

see Fig. 3 on page 16.

60

ns

 see Fig. 4 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

–4.4

–5.5

V

I

SD

=–4A, V

GS

=0V

t

rr

140

ns

I

SD

=

±

100mA

150

ns

I

SD

= 100mA

0.3

0.08

0.5

1

1

5

10

I

D

  (A)

 Re  (yfs) (S)

5

10

0.5

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–

40

°

C

0

10

20

30

40

50

10

100

1000

V

DS

  (V)

Capacitance  (pF)

500

50

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0

1.0

1.5

2

8

10

 I

DR

  (A)

V

SD

  (V)

0.5

4

6

5V

10V

V

G

S

=0V

0.5

0.1

1

5

10

50

100

0.5

1

5

10

20

I

D

  (A)

V

DS

  (V)

(T

C

=25

°

C)

I

D

  (pulse)  max

1m

s

10

m

s  (1shot)

R

DS  (ON)

LIMITED

100

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

0.3

–0.5

–1

1

5

I

D

  (A)

 Re  (yfs) (S)

–5

–8

0.5

–0.1

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–

40

°

C

0

–10

–20

–30

–40

–50

50

100

700

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

–5

I

DR

  (A)

V

SD

  (V)

–1

–8

–6

0

–4

–2

–2

–4

–5V

–10V

V

G

S

=0V

–0.5

–0.1

–1

–5

–10

–50 –100

–1

–5

–10

I

D

  (A)

V

DS

  (V)

–0.5

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

10

ms  (1shot)

R

DS

  (O

N)

LIM

ITED

100

µ

s

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

46

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

(T

a

=25

°

C)

Symbol

Unit

V

DSS

100

–100

V

V

GSS

±

20

20

V

I

D

±

4

3

A

I

D(pulse)

±

8 (PW

1ms)

6 (PW

1ms)

A

E

AS

*

16

mJ

5 (Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (Tc=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

j

–a

25 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j

–c

3.57 (Junction-Case, Tc=25

°

C, with all circuits operating )

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

*

 : V

DD

=20V, L=1mH, I

D

=5A, unclamped, see Fig. E on page 15.

SLA5010

2

4

3

8

6

5

7

9

11

12

10

1

Pch

Nch

P

T

Ratings

N channel

P channel

0

20

8

7

3

0

V

DS

  (V)

I

D

  (A)

10

6

5

4

2

1

V

GS

=5V

7V

6V

10V

0

0

1

2

8

0.2

0.4

0.6

0.8

 I

D

  (A)

R

DS  (ON)

 (

)

3

4

5

6

7

(V

GS

=10V)

–40

0

0

50

100

150

0.2

0.8

1.0

1.2

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.6

0.4

I

D

=4A

V

GS

=10V

0

–5

–20

V

DS

  (V)

I

D  

(A)

–10

–15

–6

0

–1

–3

–5

–4

–2

–6V

–7V

–10V

V

GS

=–5V

0

0

–2

1.0

1.5

I

D

  (A)

R

DS  (ON)

 (

)

–3

–4

–6

0.5

–5

–1

(V

GS

=–10V)

0

2

4

6

10

I

D

  (A)

V

GS

  (V)

8

8

7

3

0

6

5

4

2

1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

I

D

  (A)

V

GS

  (V)

0

 –2

 –10

 –4

 –6

 –8

 –6

0

 –1

 –3

 –5

 –4

 –2

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

–40

0

0

50

100

150

1.5

2.0

R

DS  (ON)

 (

)

T

C

  (

°

C)

1.0

0.5

I

D

=–3A

V

GS

=–10V

N-channel + P-channel

3-phase motor drive

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

47

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5010

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

100

V

I

D

=250

µ

A, V

GS

=0V

–100

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

± 

500

nA

V

GS

=

±

20V

500

nA

V

GS

= 20V

I

DSS

250

µ

A

V

DS

=100V, V

GS

=0V

–250

µ

A

V

DS

=–100V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

1.1

1.7

S

V

DS

=10V, I

D

=4A

0.7

1.1

S

V

DS

=–10V, I

D

=–3A

R

DS(ON)

0.50

0.60

V

GS

=10V, I

D

=4A

1.1

1.3

V

GS

=–10V, I

D

=–3A

Ciss

180

pF

V

DS

=25V, f=1.0MHz,

180

pF

V

DS

=–25V, f=1.0MHz,

Coss

82

pF

V

GS

=0V

85

pF

V

GS

=0V

t

on

40

ns

I

D

=4A, V

DD

50V, V

GS

=10V,

90

ns

I

D

=–3A, V

DD

–50V, V

GS

=–10V,

t

off

40

ns

 see Fig. 3 on page 16.

80

ns

 see Fig. 4 on page 16.

V

SD

1.2

2.0

V

I

SD

=4A, V

GS

=0V

–4.0

–5.5

V

I

SD

=–3A

t

rr

250

ns

I

SD

=

±

100mA

250

ns

I

SD

= 100mA

0.2

0.05

0.5

1

1

5

I

D

  (A)

Re  (yfs) (S)

5

8

0.5

0.1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

10

20

30

40

50

10

50

100

600

V

DS

  (V)

Capacitance  (pF)

5

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0

1.0

1.5

2

7

8

 I

DR

  (A)

V

SD

  (V)

0.5

1

3

4

6

5

5V

10V

V

GS

=0V

0.5

0.1

1

5

10

50

100

1

5

10

I

D

  (A)

V

DS

  (V)

0.5

(T

C=

25

°

C)

I

D

  (pulse)  max

1ms

10

ms  (1shot)

R

D

S

  (O

N

)

LIM

ITED

10

0

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

W

ith Infinite H

eatsink

Without Heatsink

0.2

–0.5

–1

1

5

I

D

  (A)

Re  (yfs) (S)

–6

0.5

–0.1

–0.05

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–

40

°

C

0

–10

–20

–30

–40

–50

50

100

700

V

DS

  (V)

Capacitance  (pF)

500

5

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

I

DR

  (A)

V

SD

  (V)

–1

–5

0

–3

–1

–2

–4

–6

–4

–2

–5V

–1

0V

V

G

S

=0

V

–0.5

–0.1

–1

–5

–10

–50

–100

–1

–5

–10

I

D  

(A)

V

DS

  (V)

–0.5

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

10

ms  (1shot)

R

D

S  (O

N)

LIM

ITE

D

100

µ

s

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

48

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5011

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

I

DSS

250

µ

A

V

DS

=60V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

2.2

3.3

S

V

DS

=10V, I

D

=5A

R

DS(ON)

0.17

0.22

V

GS

=10V, I

D

=5A

Ciss

300

pF

V

DS

=25V, f=1.0MHz,

Coss

160

pF

V

GS

=0V

t

on

35

ns

I

D

=5A, V

DD

30V, V

GS

=10V,

t

off

35

ns

 see Fig. 3 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A

t

rr

150

ns

I

SD

=

±

100mA

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

20

V

I

D

±

5

A

I

D(

pulse

)

±

10(

PW

1ms

)

A

E

AS

*

2

mJ

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=1mH, I

D

=1.5A, unclamped, see Fig. E on page 15.

P

T

2

3

1

4

5

6

7

8

9

10

11

12

0

2

10

10

8

2

0

V

DS

  (V)

I

D

  (A)

4

6

8

6

4

V

GS

=4V

6V

7V

5V

10V

6

0

8

10

0

2

4

8

I

D

  (A)

V

GS

  (V)

4

2

6

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

2

4

10

0.05

0.10

0.15

0.20

I

D

  (A)

R

DS  (ON)

 (

)

6

8

(V

GS

=10V)

0.3

0.08

0.5

1

1

5

10

 I

D

  (A)

Re  (yfs) (S)

5

10

0.5

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–

40

°

C

–40

0

0

50

100

150

0.1

0.2

0.3

R

DS  (ON)

 (

)

T

C

  (

°

C)

I

D

=5A

V

GS

=10V

0

10

20

30

40

50

10

100

1000

V

DS

  (V)

Capacitance  (pF)

500

50

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0

1.0

1.5

2

8

10

I

DR

  (A)

V

SD

  (V)

0.5

4

6

5V

10V

V

G

S

=0V

0.5

0.1

1

5

10

50

100

0.5

1

5

10

20

I

D

  (A)

V

DS

  (V)

(T

C

=25

°

C)

I

D

  (pulse)  max

1m

s

10

m

s  (1

sh

ot)

R

D

S

  (

O

N

)

LIM

ITED

10

0

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T  

(W)

With Silicone Grease
Natural Cooling
All Circuits Operating

W

ith Infinite Heatsink

Without Heatsink

N-channel

General purpose

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

49

Characteristic curves

SLA5012

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

–60

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

500

nA

V

GS

= 20V

I

DSS

–250

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(

yfs

)

2.3

3.5

S

V

DS

=–10V, I

D

=–5A

R

DS(ON)

0.22

0.30

V

GS

=–10V, I

D

=–5A

Ciss

570

pF

V

DS

=–25V, f=1.0MHz,

Coss

360

pF

V

GS

=0V

t

on

100

ns

I

D

=–5A, V

DD

–30V, V

GS

=–10V,

t

off

60

ns

see Fig. 3 on page 16.

V

SD

–4.5

–5.5

V

I

SD

=–5A

t

rr

150

ns

I

SD

= 100mA

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

–60

V

V

GSS

20

V

I

D

5

A

I

D(

pulse

)

10 (

PW

1ms

)

A

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

–40 to +150

°

C

P

T

2

1

3

4

5

10

12

11

6

7

8

9

0

–2

–10

–10

–6

0

V

DS

  (V)

I

D

  (A)

–4

–6

–8

–2

–4

–8

–5V

–6V

–7V

–10V

V

GS

=–4V

I

D

  (A)

V

GS

  (V)

0

–2

–4

–6

–8

–10

–6

0

–2

–4

–8

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

–2

0.05

0.15

0.20

0.25

I

D

  (A)

R

DS  (ON)

 (

)

–4

–6

–8

0.10

–10

(V

GS

=–10V)

0.3

–0.5

–1

1

8

I

D

  (A)

Re  (yfs) (S)

–5

–10

0.5

–0.1

5

(V

DS

=–10V)

25

°

C

12

5

°

C

T

C

=–

40

°

C

–40

0

0

50

100

150

0.2

0.3

0.4

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.1

I

D

=–5A

V

GS

=–10V

0

---10

---20

---30

---40

---50

50

100

2000

V

DS

  (V)

Capacitance  (pF)

1000

30

500

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

 

I

DR

  (A)

V

SD

  (V)

–1

–2

–4

–10

–6

0

–2

–4

–8

–5

V

10V

V

G

S

=0V

–0.5

–0.1

–1

–5

–10

–50

–100

–1

–5

–10

 I

D

  (A)

V

DS

  (V)

–0.5

–20

(T

C

=25

°

C)

I

D  

(pulse) max

1m

s

10

m

s  (1shot)

R

DS(ON)

LIMITED

100

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

P-channel

General purpose

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

50

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

SLA5013

12

10

11

1

2

3

7

9
4

6

8

5

Pch

Nch

(T

a

=25

°

C)

Symbol

Unit

V

DSS

100

–100

V

V

GSS

±

20

20

V

I

D

±

5

5

A

I

D(pulse)

   

±

10 (PW

1ms)

10 (PW

1ms)

A

E

AS

*

30

mJ

5 (Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (Tc=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

j-a

25 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

3.57 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=10mH, I

D

=2.5A, unclamped, see Fig. E on page 15.

P

T

Ratings

N channel

P channel

0

2

10

10

6

0

V

DS

  (V)

I

D

  (A)

4

6

8

4

2

8

V

GS

=4V

6V

7V

5V

10V

0

0

2

0.1

0.2

0.3

0.4

I

D

  (A)

R

DS  (ON)

 (

)

4

6

8

10

(V

GS

=10V)

–40

0

0

50

100

150

0.2

0.3

0.4

0.5

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.1

I

D

=5A

V

GS

=10V

0

2

4

6

8

 I

D

  (A)

V

GS

  (V)

10

6

0

4

2

8

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

–2

–10

V

DS

  (V)

I

D

  (A)

–4

–6

–8

–8

–6

0

–2

–4

–10

–5V

–6V

–7V

–10V

V

GS

=–4V

0

0

–2

0.2

0.6

0.8

1.0

I

D

  (A)

R

DS  (ON)

 (

)

–4

–6

–8

0.4

–10

(V

GS

=–10V)

–40

0

0

50

100

150

0.6

0.8

1.2

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.2

1.0

0.4

I

D

=–5A

V

GS

=–10V

I

D

  (A)

V

GS

  (V)

0

–2

–10

–4

–6

–8

–8

–6

0

–2

–4

–10

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=

40

°

C

N-channel + P-channel

H-bridge

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

51

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5013

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

100

V

I

D

=250

µ

A, V

GS

=0V

–100

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

500

nA

V

GS

= 20V

I

DSS

250

µ

A

V

DS

=100V, V

GS

=0V

–250

µ

A

V

DS

=–100V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

2.4

3.7

S

V

DS

=10V, I

D

=5A

0.9

2.0

S

V

DS

=–10V, I

D

=–5A

R

DS(ON)

0.27

0.30

V

GS

=10V, I

D

=5A

0.55

0.7

V

GS

=–10V, I

D

=–5A

Ciss

350

pF

V

DS

=25V, f=1.0MHz,

300

pF

V

DS

=–25V, f=1.0MHz,

Coss

130

pF

V

GS

=0V

200

pF

V

GS

=0V

t

on

60

ns

I

D

=5A, V

DD

50V, V

GS

=10V,

150

ns

I

D

=–5A, V

DD

–50V, V

GS

=–10V,

t

off

40

ns

 see Fig. 3 on page 16.

200

ns

 

see Fig. 4 on page 16.

V

SD

1.1

1.8

V

I

SD

=5A, V

GS

=0V

–4.5

–5.5

V

I

SD

=–5A, V

GS

=0V

t

rr

330

ns

I

SD

=

±

100mA

220

ns

I

SD

= 100mA

0.3

0.05

0.5

1

1

5

7

I

D

  (A)

Re  (yfs) (S)

5

10

0.5

0.1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–

40

°

C

0

10

20

30

40

50

50

100

1000

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

1.0

1.5

I

DR

  (A)

V

SD

  (V)

0.5

10

6

0

4

2

8

5V

10V

V

GS

=0V

0.5

0.1

1

5

10

50

100

1

10

20

I

D

  (A)

V

DS

  (V)

0.5

5

(T

C

=25

°

C)

I

D

  (pulse)  max

1m

s

10

m

s  (1

sh

ot)

R

DS  (ON)

LIM

IT

ED

10

0

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

W

ith

 In

fin

ite

 H

ea

ts

in

k

Without Heatsink

0.3

–0.5

–1

1

5

I

D

  (A)

Re  (yfs) (S)

–5

–10

0.5

–0.1

–0.05

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–

40

°

C

0

–10

–20

–30

–40

–50

50

100

1000

V

DS

  (V)

Capacitance  (pF)

500

20

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

I

DR

  (A)

V

SD

  (V)

–1

–10

–6

0

–4

–2

–2

–4

–8

–5V

–10V

V

G

S

=0V

–0.5

–0.1

–1

–5

–10

–50 –100

–1

–5

–20

I

D

  (A)

V

DS

  (V)

–0.5

–10

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

10

ms  (1shot)

R

D

S

  (O

N

)

LIM

IT

E

D

100

µ

s

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

52

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5015

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

–60

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

500

nA

V

GS

= 20V

I

DSS

–250

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(

yfs

)

1.6

2.2

S

V

DS

=–10V, I

D

=–4A

R

DS(ON)

0.38

0.55

V

GS

=–10V, I

D

=–4A

Ciss

270

pF

V

DS

=–25V, f=1.0MHz,

Coss

170

pF

V

GS

=0V

t

on

60

ns

I

D

=–4A, V

DD

–30V, V

GS

=–10V,

t

off

60

ns

 see Fig. 4 on page 16.

V

SD

–4.5

–5.5

V

I

SD

=–4A

t

rr

150

ns

I

SD

= 100mA

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

–60

V

V

GSS

20

V

I

D

4

A

I

D(

pulse

)

8 (

PW

1ms

)

A

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (T

c=25

°

C, with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits op1erating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

2

1

3

4

5

10

12

11

6

7

8

9

0

–2

–10

–8

–6

0

V

DS

  (V)

I

D

  (A)

–4

–6

–8

–2

–4

–5V

–6V

–7V

–10V

V

GS

=–4V

I

D

  (A)

V

GS

  (V)

0

–2

–10

–4

–6

–8

–8

–6

0

–2

–4

(V

DS

=–10V)

25

°

C

1

25

°

C

T

C

=

40

°

C

0

0

–2

0.2

0.4

0.5

0.6

I

D

  (A)

R

DS  (ON)

 (

)

–4

–6

–8

0.3

0.1

(V

GS

=–10V)

0.3

–0.5

–1

1

5

 I

D

  (A)

Re  (yfs) (S)

–5 ---8

0.5

–0.1

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–

40

°

C

–40

0

0

50

100

150

0.6

0.8

1.0

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.4

0.2

I

D

=–4A

V

GS

=–10V

0

–10

–20

–30

–40

–50

50

100

700

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

–5

I

DR

  (A)

V

SD

  (V)

–1

–8

–6

0

–4

–2

–2

–4

–5

V

–10V

V

GS

=

0

V

–0.5

–0.1

–1

–5

–10

–50 –100

–1

–5

–10

I

D

  (A)

V

DS

  (V)

–0.5

(T

C

=25

°

C)

I

D

  (pulse)  max

1m

s

10

ms  (1shot)

R

DS  (ON)

LIMITED

100

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

W

ith Infinite Heatsink

Without Heatsink

P-channel

General purpose

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

54

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

SLA5017

2

4

3

8

6

5

7

9

11

12

10

1

Pch

Nch

(T

a

=25

°

C)

Symbol

Unit

V

DSS

60

–60

V

V

GSS

±

10

20

V

I

D

±

5

4

A

I

D(pulse)

±

10 (PW

1ms)

8 (PW

1ms)

A

E

AS

*

2

mJ

5 (Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (Tc=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

j-a

25 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

3.57 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

*

 : V

DD

=20V, L=1mH, I

D

=2A, unclamped, see Fig. E on page 15.

P

T

Ratings

N channel

P channel

0

2

10

10

8

4

0

 V

DS

  (V)

 I

D

  (A)

4

6

8

6

2

V

GS

=3V

4V

3.5V

10V

0

0

1

7

10

0.1

0.2

0.3

I

D

  (A)

R

DS  (ON)

 (

)

2

3

4

5

6

8

9

4V

V

GS

=10V

–40

0

0

50

100

150

0.1

0.2

0.3

0.4

R

DS  (ON)

 (

)

T

C

  (

°

C)

(I

D

=2.5A)

4V

V

GS

=10V

0

–2

–10

–8

–6

0

V

DS

  (V)

I

D

  (A)

–4

–6

–8

–2

–4

–5V

–6V

–7V

–10V

V

GS

=–4V

0

0

–2

0.2

0.4

0.5

0.6

I

D

  (A)

R

DS  (ON)

 (

)

–4

–6

–8

0.3

0.1

(V

GS

=–10V)

–40

0

0

50

100

150

0.6

0.8

1.0

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.4

0.2

I

D

=–4A

V

GS

=–10V

I

D

  (A)

V

GS

  (V)

0

–2

–10

–4

–6

–8

–8

–6

–0

–2

–4

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

6

0

8

10

0

1

2

3

4

I

D

  (A)

V

GS

  (V)

5

4

2

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

N-channel + P-channel

3-phase motor drive

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

55

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5017

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

60

V

I

D

=250

µ

A, V

GS

=0V

–60

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

10V

500

nA

V

GS

= 20V

I

DSS

250

µ

A

V

DS

=60V, V

GS

=0V

–250

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

3.1

4.6

S

V

DS

=10V, I

D

=5A

1.6

2.2

S

V

DS

=–10V, I

D

=–4A

R

DS(ON)

0.17

0.22

V

GS

=10V, I

D

=5A

0.38

0.55

V

GS

=–10V, I

D

=–4A

0.25

0.30

V

GS

=4V, I

D

=5A

Ciss

400

pF

V

DS

=25V, f=1.0MHz,

270

pF

V

DS

=–25V, f=1.0MHz,

Coss

160

pF

V

GS

=0V

170

pF

V

GS

=0V

t

on

80

ns

I

D

=5A, V

DD

30V, V

GS

=5V,

60

ns

I

D

=–4A, V

DD

–30V, V

GS

=–10V,

t

off

50

ns

see Fig. 3 on page 16.

60

ns

 see Fig. 4 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

–4.4

–5.5

V

I

SD

=–4A, V

GS

=0V

t

rr

150

ns

I

SD

=

±

100mA

150

ns

I

SD

= 100mA

0.3

0.05

0.5

1

1

5

10

I

D

  (A)

Re  (yfs) (S)

5

10

0.5

0.1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–

40

°

C

0

10

20

30

40

50

10

100

1000

V

DS

  (V)

Capacitance  (pF)

500

50

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0

1.0

1.5

6

8

10

I

DR

  (A)

V

SD

  (V)

0.5

4

2

4V

10V

V

GS

=0V

0.5

0.1

1

5

10

50

100

1

5

10

20

 I

D

  (A)

V

DS

  (V)

0.5

(T

C

=25

°

C)

I

D

  (pulse)  max

1m

s

10

m

s  (1s

hot)

R

DS  (ON)

LIMITED

100

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

0.3

–0.5

–1

1

5

I

D

  (A)

Re  (yfs) (S)

–5

–8

0.5

–0.1

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–

40

°

C

0

–10

–20

–30

–40

–50

50

100

700

V

DS

  (V)

 Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

–5

 I

DR

  (A)

V

SD

  (V)

–1

–8

–6

0

–4

–2

–2

–4

–5V

–10V

V

GS

=0V

–0.5

–0.1

–1

–5

–10

–50

–100

–1

–5

–10

I

D

  (A)

V

DS

  (V)

–0.5

(T

C

=25

°

C)

I

D

  (pulse)  max

1m

s

10

m

s  (1shot)

R

D

S  (O

N

)

LIMITED

100

µ

s

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

56

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

(T

a

=25

°

C)

Symbol

Unit

V

DSS

60

–60

V

V

GSS

±

10

20

V

I

D

±

5

4

A

I

D(pulse)

±

10 (PW

1ms)

8 (PW

1ms)

A

E

AS

*

2

mJ

5 (Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (Tc=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

j-a

25 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

3.57 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

*

 : V

DD

=20V, L=1mH, I

D

=2A, unclamped, see Fig. E on page 15.

SLA5018

12

10

11

1

2

3

7

9
4

6

8

5

Pch

Nch

P

T

Ratings

N channel

P channel

0

2

10

10

8

4

0

V

DS

  (V)

I

D

  (A)

4

6

8

6

2

V

GS

=3V

4V

3.5V

10V

0

0

1

7

10

0.1

0.2

0.3

I

D

  (A)

R

DS  (ON)

 (

)

2

3

4

5

6

8

9

4V

V

GS

=10V

–40

0

0

50

100

150

0.1

0.2

0.3

0.4

R

DS  (ON)

 (

)

T

C

  (

°

C)

(I

D

=2.5A)

4V

V

GS

=10V

6

0

8

10

0

1

2

3

4

I

D  

(A)

V

GS

  (V)

5

4

2

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

–2

–10

–8

–6

0

V

DS

  (V)

I

D

  (A)

–4

–6

–8

–2

–4

–5V

–6V

–7V

–10V

V

GS

=–4V

0

0

–2

0.2

0.4

0.5

0.6

I

D

  (A)

R

DS  (ON)

 (

)

–4

–6

–8

0.3

0.1

(V

GS

=–10V)

–40

0

0

50

100

150

0.6

0.8

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.4

0.2

I

D

=–2A

V

GS

=–10V

 I

D

  (A)

V

GS

  (V)

0

–2

–10

–4

–6

–8

–8

–6

0

–2

–4

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

N-channel + P-channel

H-bridge

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Absolute maximum ratings

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

57

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5018

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

60

V

I

D

=250

µ

A, V

GS

=0V

–60

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

10V

500

nA

V

GS

= 20V

I

DSS

250

µ

A

V

DS

=60V, V

GS

=0V

–250

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

3.1

4.6

S

V

DS

=10V, I

D

=5A

1.6

2.2

S

V

DS

=–10V, I

D

=–4A

R

DS(ON)

0.17

0.22

V

GS

=10V, I

D

=2.5A

0.38

0.55

V

GS

=–10V, I

D

=–2A

0.25

0.30

V

GS

=4V, I

D

=2.5A

Ciss

400

pF

V

DS

=25V, f=1.0MHz,

270

pF

V

DS

=–25V, f=1.0MHz,

Coss

160

pF

V

GS

=0V

170

pF

V

GS

=0V

t

on

80

ns

I

D

=5A, V

DD

30V, V

GS

=5V,

60

ns

I

D

=–4A, V

DD

–30V, V

GS

=–10V,

t

off

50

ns

 see Fig. 3 on page 16.

60

ns

 see Fig. 4 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

–4.4

–5.5

V

I

SD

=–4A, V

GS

=0V

t

rr

150

ns

I

SD

=

±

100mA

150

ns

I

SD

= 100mA

0.3

0.05

0.5

1

1

5

10

I

D

  (A)

Re  (yfs) (S)

5

10

0.5

0.1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–

40

°

C

0

10

20

30

40

50

10

100

1000

V

DS

  (V)

Capacitance  (pF)

500

50

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0

1.0

1.5

6

8

10

I

DR

  (A)

V

SD

  (V)

0.5

4

2

4V

10V

V

GS

=0V

0.5

0.1

1

5

10

50

100

1

5

10

20

I

D

  (A)

V

DS

  (V)

0.5

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

10

m

s  (1shot)

R

DS  (O

N)

LIM

IT

E

D

100

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

W

ith

 In

fin

ite

 H

ea

tsin

k

Without Heatsink

0.3

–0.5

–1

1

5

I

D

  (A)

Re  (yfs) (S)

–5

–8

0.5

–0.1

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–

40

°

C

0

–10

–20

–30

–40

–50

50

100

700

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

–5

I

DR

  (A)

V

SD

  (V)

–1

–8

–6

0

–4

–2

–2

–4

–5V

–10V

V

GS

=0V

–0.5

–0.1

–1

–5

–10

–50 –100

–1

–5

–10

I

D

  (A)

V

DS

  (V)

–0.5

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

10

ms  (1shot)

R

D

S

  (

O

N

)

LIMITED

100

µ

s

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

58

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5021

(T

a

=25

°

C)

Symbol

Unit

Conditins

V

(BR)DSS

100

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

10V

I

DSS

250

µ

A

V

DS

=100V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

4

6

S

V

DS

=10V, I

D

=5A

0.18

0.19

V

GS

=10V, I

D

=2.5A

0.19

0.25

V

GS

=4V, I

D

=2.5A

Ciss

880

pF

V

DS

=25V, f=1.0MHz,

Coss

240

pF

V

GS

=0V

t

on

90

ns

I

D

=5A, V

DD

50V, V

GS

=5V,

t

off

75

ns

 see Fig. 3 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

t

rr

500

ns

I

SD

=

±

100mA

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

100

V

V

GSS

±

10

V

I

D

±

5

A

I

D(

pulse

)

±

10 (

PW

1ms

)

A

E

AS

*

60

mJ

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

–40 to +150

°

C

* : V

DD

=20V, L=10mH, I

D

=3A, unclamped, see Fig. E on page 15.

P

T

R

DS(ON)

2

3

1

4

5

6

7

8

9

10

11

12

0

2

10

8

6

0

V

DS

  (V)

I

D

  (A)

4

6

8

4

2

10

VGS

=

2.5V

3.0V

3.5V

4.0V

10V

0

1

2

3

4

I

D

  (A)

V

GS

  (V)

8

6

0

4

2

10

5

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

2

0.05

0.15

0.20

0.25

I

D

  (A)

R

DS  (ON)

 (

)

4

6

10

0.10

8

V

GS

=4V

V

GS

=10V

0.3

0.05

0.5

1

1

5

20

I

D

  (A)

Re  (yfs) (S)

5

10

0.5

0.1

10

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

–40

0

0

50

100

150

0.3

0.4

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.1

0.2

(I

D

=2.5A)

V

GS

=4V

V

GS

=10V

0

10

20

30

40

50

20

50

100

3000

V

DS

  (V)

Capacitance  (pF)

1000

500

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

1.0

1.5

I

DR

  (A)

V

SD

  (V)

0.5

8

6

0

4

2

10

4V

10V

V

GS

=0V

0.5

0.1

1

5

10

50

100

1

5

20

I

D

  (A)

V

DS

  (V)

0.5

10

(T

C

=25

°

C)

I

D

  (pulse)  max

1m

s

10

m

s  (1shot)

R

DS  (ON)

LIMITED

100

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

W

ith Infinite H

eatsink

Without Heatsink

N-channel

General purpose

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

60

Characteristic curves (N-channel)

R

1

R

2

2

4

3

OUT

1

8

6

7

OUT

2

9

11

10

OUT

3

5

12

V

M

1

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

M

60

V

I

O

±

6 (PW

100ms)

A

I

OP

±

10 (PW

1ms)

A

V

GSS

±

10

V

I

B

–0.5

A

5 (T

a

=25

°

C)

35 (T

c

=25

°

C)

θ

j-a

25

°

C/W

θ

j-c

3.57

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

P

T

W

SLA5022

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

10V

I

DSS

250

µ

A

V

DS

=60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re(yfs)

3.1

4.6

S

V

DS

=10V, I

D

=4A

0.17

0.22

V

GS

=10V, I

D

=4A

0.25

0.30

V

GS

=4V, I

D

=4A

C

iss

400

pF

V

DS

=25V, f=1.0MHz,

C

oss

160

pF

V

GS

=0V

t

on

80

ns

I

D

=4A, V

DD

=30V,

t

off

50

ns

V

GS

=5V

V

SD

1.1

1.5

V

I

SD

=4A, V

GS

=0V

t

rr

150

ns

I

F

=

±

100mA

Specification

min

typ

max

R

DS(ON)

R

1

: 3k

Ω 

typ  R

2

: 80

Ω 

typ

0

2

10

10

8

4

0

V

GS

=3V

4V

3.5V

4

6

8

10V

6

2

V

DS

  (V)

I

D

  (A)

6

0

8

10

(V

DS

=10V)

25

°

C

125

°

C

0

1

2

3

4

I

D

  (A)

V

GS

  (V)

T

C

=–40

°

C

5

4

2

V

GS

=10V

0

0

1

7

10

0.1

0.2

0.3

I

D

  (A)

R

DS  (ON)

 (

)

2

3

4

5

6

8

9

4V

0.3

0.05

0.5

1

1

5

10

V

DS

=10V

25

°

C

125

°

C

I

D

  (A)

Re  (yfs) (S)

5

10

0.5

T

C

=–

40

°

C

0.1

–40

0

0

50

100

150

0.1

0.2

0.3

0.4

R

DS  (ON)

 (

)

T

C

  (

°

C)

V

GS

=10V

 4V

(I

D

=2.5A)

0

10

20

30

40

50

10

100

1000

Ciss

Coss

Crss

V

DS

  (V)

Capacitance  (pF)

500

50

V

GS

=0V

f=1MHz

0

0

1.0

1.5

6

8

10

VGS=0V

4V

I

DR

  (A)

V

SD

  (V)

0.5

10V

4

2

0.5

0.1

1

5

10

50

100

1

5

10

20

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

100

µ

s

10

ms

(1shot)

R

D

S

  (

O

N

)

  LIMITED

I

D

  (A)

V

DS

  (V)

0.5

PNP Darlington + N-channel MOSFET

3-phase motor drive

Absolute maximum ratings

Electrical characteristics (Sink : N channel MOSFET)

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

V

DS

-I

D

 Characteristics (Typical)

V

GS

-I

Temperature Characteristics (Typical)

I

DS

-R

DS(ON)

 Characteristics (Typical)

I

D

-Re

(yfs) 

Temperature Characteristics (Typical)

T

C

-R

DS(ON)

 Characteristics (Typical)

V

DS

-Cpacitance Characteristics (Typical)

V

SD

-I

DR

 Characteristics (Typical)

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

61

Characteristic curves (PNP)

SLA5022

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–10

µ

A

V

CB

=–60V

I

EBO

–1

–5

mA

V

EB

=–6V

V

CEO

–60

V

I

C

=–25mA

h

FE

2000

5000

12000

V

CE

=–4V, I

C

=–4A

V

CE

(sat)

–1.5

V

V

BE

(sat)

–2.0

V

V

FEC

2.0

V

I

FEC

=4A

t

rr

1.0

µ

s

I

F

=

±

0.5A

t

on

1.0

µ

s

V

CC

–25V,

t

stg

1.4

µ

s

I

C

=–4A,

t

f

0.6

µ

s

I

B1

=–I

B2

=–10mA

f

T

120

MHz

V

CE

=–12V, I

E

=1A

C

ob

150

pF

V

CB

=–10V, f=1MHz

Specification

min

typ

max

Electrical characteristics (Source: PNP transistor)

I

C

=–4A, I

B

=–10mA

–12

–10

–8

–6

–4

–2

0

0

–2

–4

–6

I

B

=–10mA

–1mA

–0.5mA

–2mA

–3mA

–5mA

I

C

  (A)

V

CE

  (V)

20000

10000

5000

1000

500

200

–0.1

–0.5

–1

–5

–10

typ

(V

CE

=–4V)

h

FE

I

C

  (A)

20000

10000

5000

1000

500

200

–0.1

–0.5

–1

–5

T

a

=125

°

C

75

°

C

25

°

C

–3

0

°

C

–10

(V

CE

=–4V)

h

FE

I

C

  (A)

–3

–0.1

–0.5

–2

–1

0

–1

–5

–10

125

°

C

75

°

C

25

°

C

–20

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

T

a

=–30

°

C

–3

–0.3 –0.5

–2

–1

0

–1

–5

–10

–50

–100 –200

I

C

=–2A

I

C

=–4A

I

C

=–8A

V

CE

  (sat) (V)

I

B

  (mA)

0

–1

–2

–3

75

°

C

25

°

C

30

°

C

T

a

=

1

2

5

°

C

–12

–10

–8

–6

–4

–2

0

(V

CE

=–4V)

I

C

  (A)

V

BE

  (V)

20

10

5

1

0.5

1

5

10

50 100

500 1000

PW  (mS)

θ

ch-c

  (

°

C / W)

–5

V

CE

  (V)

–100

–50

–10

–3

–20

I

C

  (A)

–5

–1

–0.5

–0.1

Single Pulse
Without Heatsink
T

a

=25

°

C

10ms

1ms

100

µ

s

–10

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

C

 Characteristics (Typical)

h

FE

-I

C

 Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

62

Characteristic curves (N-channel)

V

DS

-I

D

 Characteristics (Typical)

V

GS

-I

Temperature Characteristics (Typical)

I

DS

-R

DS(ON)

 Characteristics (Typical)

I

D

-Re

(yfs) 

Temperature Characteristics (Typical)

T

C

-R

DS(ON)

 Characteristics (Typical)

V

DS

-Cpacitance Characteristics (Typical)

V

SD

-I

DR

 Characteristics (Typical)

Safe Operating Area (SOA)

θ

ch-c

-PW Characteristics

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

M

100

V

I

O

±

6 (PW

100ms)

A

I

OP

±

8 (PW

1ms)

A

V

GSS

±

10

V

I

B

–0.5

A

5 (T

a

=25

°

C)

35 (T

c

=25

°

C)

θ

j-a

25

°

C/W

θ

j-c

3.57

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

10V

I

DSS

250

µ

A

V

DS

=100V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re(yfs)

1.1

1.7

S

V

DS

=10V, I

D

=4A

0.47

0.55

V

GS

=10V, I

D

=2A

0.60

0.78

V

GS

=4V, I

D

=2A

C

iss

230

pF

V

DS

=25V, f=1.0MHz,

C

oss

60

pF

V

GS

=0V

t

on

60

ns

I

D

=4A, V

DD

=50V,

t

off

50

ns

V

GS

=10V

V

SD

1.2

2.0

V

I

SD

=4A, V

GS

=0V

t

rr

250

ns

I

F

=

±

100mA

Specification

min

typ

max

P

T

W

R

DS(ON)

SLA5023

0

2

10

8

7

6

0

V

GS

=3V

4V

4.5V

V

DS

  (V)

I

D

  (A)

4

6

8

10V

5

4

3

2

1

3.5V

V

DS

=10V

25

°

C

125

°

C

0

2

4

6

8

I

D

  (A)

V

GS

  (V)

T

C

=

40

°

C

8

7

6

0

5

4

3

2

1

V

GS

=10V

0

0

1

2

3

0.2

0.4

0.6

0.8

I

D

  (A)

R

DS  (ON)

 (

)

4

5

6

7

8

V

GS

=4V

0.3

0.05

0.5

1

1

5

7

V

DS

=10V

25

°

C

125

°

C

I

D

  (A)

Re  (yfs) (S)

5

8

0.5

T

C

=4

0

°

C

0.1

0

10

20

30

40

50

5

50

100

700

Ciss

Coss

Crss

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

0

1.0

1.5

V

G

S

=0V

4V

 I

DR

  (A)

V

SD

  (V)

0.5

10V

8

7

6

0

5

4

3

2

1

R

1

R

2

2

4

3

OUT

1

8

6

7

OUT

2

9

11

10

OUT

3

5

12

V

M

1

R

1

: 3k

Ω 

typ  R

2

: 80

Ω 

typ

PNP Darlington + N-channel MOSFET

3-phase motor drive

0.1

1

0.5

10

5

100

50

1000

500

10000

5000

PW  (mS)

20

10

5

1

0.5

0.2

θ

ch-c

  (

°

C / W)

–40

0

0

50

100

150

0.6

0.8

1.0

1.2

V

GS

=10

V

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.4

0.2

V

GS

=4

V

(I

D

=2A)

0.5

0.1

1

5

10

50

100

1

5

10

(Tc=25

°

C)

D

I   (pulse) max

1ms

100

µ

s

10

ms  (1shot)

I

D

  (A)

V

DS

  (V)

LIMITED

0.5

R

D

S

  (O

N

)

Absolute maximum ratings

Electrical characteristics (Sink: N-channel MOSFET)

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

63

Characteristic curves (PNP)

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

C

 Characteristics (Typical)

h

FE

-I

C

 Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–10

µ

A

V

CB

=–100V

I

EBO

–10

mA

V

EB

=–6V

V

CEO

–100

V

I

C

=–10mA

h

FE

2000

5000

12000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

–1.5

V

V

BE

(sat)

–2.2

V

V

FEC

1.3

V

I

FEC

=–1A

t

rr

2.0

µ

s

I

F

=

±

100mA

t

on

0.6

µ

s

V

CC

–30V

t

stg

1.6

µ

s

I

C

=–3A

t

f

0.5

µ

s

I

B1

=–I

B2

=–6mA

f

T

90

MHz

V

CE

=–12V, I

E

=1A

C

ob

100

pF

V

CB

=–10V, f=1MHz

Specification

min

typ

max

SLA5023

I

C

=–3A, I

B

=–6mA

–8

–7

–6

–5

–4

–3

–2

–1

0

0

–1

–2

–3

–4

–5

–2mA

–1.2mA

–0.8mA

–0.6mA

–0.4mA

I

B

=–4mA

I

C

  (A)

V

CE

  (V)

(V

CE

=–4V)

20000

10000

5000

1000

500

100

50

30

–0.03

–0.1

–0.5

–1

–5

h

FE

I

C

  (A)

–8

typ

–0.05

20000

10000

5000

1000

500

100

50

30

–0.03

–0.1

–0.5

–1

–5 –8

T

a

=125

°

C

–30

°

C

–0.05

75

°

C

25

°

C

(V

CE

=–4V)

h

FE

I

C  

(A)

–3

–0.3

–0.5

–2

–1

0

–1

–5

–10

125

°

C

75

°

C

25

°

C

T

a

=–30

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

–3

–0.2

–0.5

V

CE

  (sat) (V)

I

B

  (mA)

–2

–1

0

–1

–5 –10

–50 –100

–500

I

C

=–1A

I

C

=–3A

I

C

=–5A

–8

–6

–4

–2

0

0

–1

–2

–3

T

a

=

1

2

5

°

C

30

°

C

75

°

C

25

°

C

(V

CE

=–4V)

I

C

  (A)

V

BE

  (V)

–10

–5

–5

–1

–0.5

–0.1

–0.05

–0.03

–100

–50

–10

–3

Single Pulse
Without Heatsink
Ta=25

°

C

10ms

1ms

100

µ

s

I

C

  (A)

V

CE

  (V)

20

10

5

1

0.5

1

5

10

50 100

500 1000

PW  (mS)

θ

ch-c

  (

°

C / W)

Electrical characteristics (Source: PNP transistor)

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

W

ith Infinite Heatsink

Without Heatsink

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

64

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5024

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

–60

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

500

nA

V

GS

= 20V

I

DSS

–250

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(

yfs

)

1.6

2.2

S

V

DS

=–10V, I

D

=–4A

R

DS(ON)

0.38

0.55

V

GS

=–10V, I

D

=–4A

Ciss

270

pF

V

DS

=–25V, f=1.0MHz,

Coss

170

pF

V

GS

=0V

t

on

60

ns

I

D

=–4A, V

DD

–30V, V

GS

=–10V,

t

off

60

ns

 see Fig. 4 on page 16.

V

SD

–4.4

–5.5

V

I

SD

=–4A

t

rr

150

ns

I

SD

= 100mA

Specification

min

typ

max

1

3

2

5

6

4

8

7

9

12

10

11

0

–2

–10

–8

–6

0

V

DS

  (V)

I

D

  (A)

–4

–6

–8

–2

–4

–5V

–6V

–7V

–10V

V

GS

=–4V

I

D

  (A)

V

GS

  (V)

0

–2

–10

–4

–6

–8

–8

–6

0

–2

–4

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=

4

0

°

C

0

0

–2

0.2

0.4

0.5

0.6

I

D

  (A)

R

DS  (ON)

 (

)

–4

–6

–8

0.3

0.1

(V

GS

=–10V)

0.3

–0.5

–1

1

5

I

D

  (A)

Re  (yfs) (S)

–5 –8

0.5

–0.1

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–

40

°

C

–40

0

0

50

100

150

0.6

0.8

1.0

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.4

0.2

I

D

=–4A

V

GS

=–10V

0

–10

–20

–30

–40

–50

50

100

700

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

–5

I

DR

  (A)

V

SD

  (V)

–1

–8

–6

0

–4

–2

–2

–4

–5

V

–1

0V

V

G

S

=0V

–0.5

–0.1

–1

–5

–10

–50 –100

–1

–5

–10

I

D

  (A)

V

DS

  (V)

–0.5

(T

C

=25

°

C)

I

D

  (pulse)  max

1m

s

10

ms  (1shot)

R

DS  (ON)

LIMITED

100

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

P-channel

General purpose

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

–60

V

V

GSS

20

V

I

D

4

A

I

D(

pulse

)

8 (

PW

1ms

)

A

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between finand lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

65

Characteristic curves

SLA5029

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

1.5

2.4

S

V

DS

=10V, I

D

=4A

R

DS(ON)

0.33

0.45

V

GS

=10V, I

D

=4A

Ciss

120

pF

V

DS

=25V, f=1.0MHz,

Coss

60

pF

V

GS

=0V

t

on

115

ns

I

D

=4A, V

DD

30V, V

GS

=10V,

t

off

35

ns

 see Fig. 3 on page 16.

V

SD

1.1

1.5

V

I

SD

=4A

t

rr

100

ns

I

SD

=

±

100mA

Specification

min

typ

max

2

3

1

4

5

6

7

8

9

10

11

12

N-channel

General purpose

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

20

V

I

D

±

4

A

I

D(

pulse

)

±

8 (

PW

1ms

)

A

E

AS

*

1

mJ

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=1mH, I

D

=1.2A, unclamped, see Fig. E on page 15.

P

T

Absolute maximum ratings

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

66

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5031

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

10V

I

DSS

250

µ

A

V

DS

=60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

3.1

4.6

S

V

DS

=10V, I

D

=5A

0.17

0.22

V

GS

=10V, I

D

=2.5A

0.25

0.30

V

GS

=4V, I

D

=2.5A

Ciss

400

pF

V

DS

=25V, f=1.0MHz,

Coss

160

pF

V

GS

=0V

t

on

80

ns

I

D

=5A, V

DD

30V, V

GS

=5V,

t

off

50

ns

 see Fig. 3 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

t

rr

150

ns

I

SD

=

±

100mA

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

10

V

I

D

±

5

A

I

D(

pulse

)

±

10 (

PW

1ms

)

A

E

AS

*

2

mJ

I

F

5 (

PW

0.5ms, Du

25%

)

A

I

FSM

10 (

PW

10ms, Single pulse

)

A

V

R

120

V

P

T

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=1mH, I

D

=1.7A, unclamped, see Fig. E on page 15.

Specification

min

typ

max

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.0

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

Speciication

min

typ

max

R

DS(ON)

1

2

5

4

6

3

8

9

12

11

10

7

0

2

10

10

8

4

0

V

DS

  (V)

I

D

  (A)

4

6

8

6

2

V

GS

=3V

4V

3.5V

10V

6

0

8

10

0

1

2

3

4

 I

D

  (A)

V

GS

  (V)

5

4

2

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

1

7

10

0.1

0.2

0.3

I

D

  (A)

R

DS  (ON)

 (

)

2

3

4

5

6

8

9

4V

V

GS

=10V

0.3

0.05

0.5

1

1

5

10

I

D

  (A)

Re  (yfs) (S)

5

10

0.5

0.1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–

40

°

C

–40

0

0

50

100

150

0.1

0.2

0.3

0.4

R

DS  (ON)

 (

)

T

C

  (

°

C)

(I

D

=2.5A)

4V

V

GS

=10V

0

10

20

30

40

50

10

100

1000

V

DS

  (V)

Capacitance  (pF)

500

50

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0

1.0

1.5

6

8

10

I

DR

  (A)

V

SD

  (V)

0.5

4

2

4V

10V

V

GS

=0V

0.5

0.1

1

5

10

50

100

1

5

10

20

I

D

  (A)

V

DS

  (V)

0.5

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

10

ms  (1shot)

R

D

S

  (O

N

)

LIMITED

100

µ

s

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

W

ith

 In

fin

ite

 H

ea

ts

in

k

Without Heatsink

N-channel

With built-in flywheel diode

Absolute maximum ratings

Electrical characteristics

Diode for flyback voltage absorption

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

67

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5037

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=100V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

8

13

S

V

DS

=10V, I

D

=5A

60

80

m

V

GS

=10V, I

D

=5A

75

95

m

V

GS

=4V, I

D

=5A

Ciss

1630

pF

V

DS

=10V, f=1.0MHz,

Coss

480

pF

V

GS

=0V

td

(

on

)

30

ns

I

D

=5A,

t

r

45

ns

V

DD

50V,

td

(

off

)

100

ns

R

L

=10

, V

GS

=5V,

t

f

40

ns

see Fig. 3 on page 16.

V

SD

1.1

1.5

V

I

SD

=10A, V

GS

=0V

t

rr

300

ns

I

SD

=

±

100mA

Specifications

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

100

V

V

GSS

±

20

V

I

D

±

10

A

I

D(

pulse

)

±

40 (

PW

1ms

)

A

E

AS

*

200

mJ

(Ta=25

°

C, with all circuits operating, without heatsink)

W

40 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.13 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=25V, L=3mH, I

D

=10A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

R

DS(ON)

1

3

2

4

6

5

9

7

8

12

10

11

0

10

2

4

0

V

DS

  (V)

I

D

  (A)

10

6

8

2

4

6

8

V

GS

=2V

2.8V

10V

3V

4V

2.6V

2.4V

2.2V

0

10

8

6

4

2

0

1

2

3

4

I

D

  (A)

V

GS

  (V)

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

10

40

20

60

100

80

I

D

  (A)

R

DS  (ON)

 (m

)

2

4

6

8

V

GS

=4V

V

GS

=10V

0.05

0.3

0.5

0.1

0.5

1

1

I

D

  (A)

Re  (yfs) (S)

30

10

5

10

5

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

–40

0

0

50

100

150

100

50

150

R

DS  (ON)

 (m

)

T

C

  (

°

C)

(I

D

=5A)

V

GS

=4V

V

GS

=10V

0

10

20

30

40

50

50

100

500

5000

1000

V

DS

  (V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0

0.5

1.0

1.5

10

8

6

I

DR

  (A)

V

SD

  (V)

4

2

5V

V

G

S

=0V

0.5

1

5

10

50

100

0.5

1

5

50

10

I

D

  (A)

V

DS

  (V)

I

D

  (pulse)  max

1m

s

10

m

s  (1shot)

R

DS  (ON)

LIM

ITED

      

100

µ

s

(T

C

=25

°

C)

N-channel

General purpose

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

68

Characteristic curves

SLA5040

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

I

DSS

250

µ

A

V

DS

=100V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

1.1

1.7

S

V

DS

=10V, I

D

=4A

R

DS(ON)

0.50

0.60

V

GS

=10V, I

D

=4A

Ciss

180

pF

V

DS

=25V, f=1.0MHz,

Coss

82

pF

V

GS

=0V

t

on

40

ns

I

D

=4A, V

DD

=50V, V

GS

=10V,

t

off

40

ns

 see Fig. 3 on page 16.

V

SD

1.2

2.0

V

I

SD

=4A, V

GS

=0V

t

rr

250

ns

I

SD

=

±

100mA

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

100

V

V

GSS

±

20

V

I

D

±

4

A

I

D(

pulse

)

±

8 (

PW

1ms

)

A

E

AS

*

16

mJ

I

F

4 (

PW

0.5ms, Du

25%

)

A

I

FSM

8 (

PW

10ms, Single pulse

)

A

V

R

120

V

P

T

5 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

35 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

 25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

–40 to +150

°

C

* : V

DD

=20V, L=1mH, I

D

=5A, unclamped, see Fig. E on page 15.

Specification

min

typ

max

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.0

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

Diode for flyback voltage absorption

Specification

min

typ

max

1

2

5

4

6

3

8

9

12

11

10

7

N-channel

With built-in flywheel diode

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

69

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5041

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

200

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=200V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=1mA

Re

(

yfs

)

5.0

8.5

S

V

DS

=10V, I

D

=5A

R

DS(ON)

130

175

m

V

GS

=10V, I

D

=5A

Ciss

850

pF

V

DS

=10V, f=1.0MHz,

Coss

550

pF

V

GS

=0V

td

(

on

)

20

ns

I

D

=5A,

t

r

25

ns

V

DD

100V,

td

(

off

)

70

ns

R

L

=20

, V

GS

=10V,

t

f

70

ns

 see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=10A, V

GS

=0V

t

rr

500

ns

I

SD

=

±

100mA

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

200

V

V

GSS

±

20

V

I

D

±

10

A

I

D(

pulse

)

±

40 (

PW

1ms, Du

1%

)

A

E

AS

*

120

mJ

(Ta=25

°

C, with all circuits operating, without heatsink)

W

40 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.13 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=25V, L=2.1mH, I

D

=10A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

1

3

2

4

6

5

9

7

8

12

10

11

0

2

4

0

4

2

6

8

10

6

V

GS

  (V)

I

D

  (A)

8

(V

DS

=10V)

25

°

C

40

°

C

125

°

C

0

2

0

50

100

150

200

I

D

  (A)

R

DS  (ON)

 (m

)

4

10

8

6

(V

GS

=10V)

–40

0

400

300

200

100

T

C

  (

°

C)

R

DS  (ON)

 (m

)

150

100

50

0

I

D

=5A

V

GS

=10V

0

10

50

40

30

20

10

100

50

500

1000

3000

V

DS

  (V)

Capacitance  (pF)

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

0

0.5

1.0

1.5

0

4

2

6

8

10

V

SD

  (V)

I

DR

  (A)

V

GS

=5

.1

0V

V

GS

=0V

0.5

1

5

50

10

0.01

0.05

0.1

0.5

5

1

10

50

100

500

V

DS

  (V)

(T

C

=25

°

C)

I

D

  (A)

10

m

s  (1

sh

ot)

1ms

100

µ

s

 R

DS

  (

O

N)

  

LIMITED

I

D

  (pulse)  max

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

N-channel

General purpose

Absolute maximum ratings

External dimensions

A

 • • • 

SLA (12-pin)

Equivalent circuit diagram

Electrical characteristics

0

2

4

0

4

2

6

8

10

6

V

DS

  (V)

I

D

  (A)

8

10

5

.5

V

6V

10V

5V

4.5V

V

GS

=4V

0.05

0.1

0.5

0.3

1

0.5

5

10

20

1

I

D

  (A)

Re  (yfs) (S)

5

10

T

C

=25

°

C

T

C

=125

°

C

T

C

=–

40

°

C

(V

DS

=10V)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

70

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

D

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5042

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=100V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

4

6

S

V

DS

=10V, I

D

=2.5A

130

185

m

V

GS

=10V, I

D

=2.5A

155

230

m

V

GS

=4V, I

D

=2.5A

Ciss

740

pF

V

DS

=10V, f=1.0MHz,

Coss

240

pF

V

GS

=0V

td

(

on

)

20

ns

I

D

=2.5A,

t

r

30

ns

V

DD

50V,

td

(

off

)

60

ns

R

L

=20

, V

GS

=5V,

t

f

20

ns

 see Fig. 3 on page 16.

V

SD

1.0

1.4

V

I

SD

=5A, V

GS

=0V

t

rr

180

ns

I

SD

=

±

100mA

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

100

V

V

GSS

±

20

V

I

D

±

5

A

I

D(

pulse

)

±

10 (

PW

1ms, Du

1%

)

A

E

AS

*

70

mJ

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

W

θ

j–a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j–c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=25V, L=4.2mH, I

D

=5A, unclamped, R

G

=50

,see Fig. E on page 15.

P

T

R

DS(ON)

2

3

1

4

5

6

7

8

9

10

11

12

0

10

5

1

0

V

DS

  (V)

I

D

  (A)

4

2

3

2

4

6

8

3V

4V

10V

V

GS

=2.2V

2.8V

2.6V

2.4V

0

5

4

3

2

1

25

°

C

125

°

C

0

1

2

3

4

I

D

  (A)

V

GS

  (V)

T

C

=–40

°

C

(V

DS

=10V)

V

GS

=4V

V

GS

=10V

0

0

100

50

200

150

I

D

  (A)

R

DS  (ON)

 (m

)

1

2

3

4

5

0.05

0.3

0.5

0.1

0.5

1

1

I

D

  (A)

Re  (yfs) (S)

10

5

5

25

°

C

125

°

C

T

C

=–40

°

C

(V

DS

=10V)

–40

50

0

50

100

150

300

100

150

200

250

350

R

DS  (ON)

 (m

)

T

C

  (

°

C)

V

GS

=10V

V

GS

=4V

(I

D

=2.5A)

0

10

20

30

40

50

20

50

100

500

2000

1000

Ciss

Coss

Crss

V

DS

  (V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

0

0

0.5

1.0

1.5

5

4

3

I

DR

  (A)

V

SD

  (V)

2

1

5V

10V

V

GS

= 0V

0.5

1

5

10

50

200

100

0.1

0.5

1

5

20

10

I

D

  (pulse)  max

100

µ

s

I

D

  (A)

V

DS

  (V)

1ms

10ms  (1shot)

R

DS  (ON)  

LIMITED

T

C

=25

°

C

1-Circuit Operation

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

N-channel

General purpose

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

71

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5044

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(

BR)DSS

250

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=250V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=1mA

Re

(

yfs

)

5.0

8.5

S

V

DS

=10V, I

D

=5A

R

DS(ON)

200

250

m

V

GS

=10V, I

D

=5A

Ciss

850

pF

V

DS

=10V, f=1.0MHz,

Coss

550

pF

V

GS

=0V

td

(

on

)

20

ns

I

D

=5A,

t

r

25

ns

V

DD

100V,

td

(

off

)

70

ns

R

L

=20

, V

GS

=10V,

t

f

70

ns

 see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=10A, V

GS

=0V

t

rr

700

ns

I

SD

=

±

100mA

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

250

V

V

GSS

±

20

V

I

D

±

10

A

I

D(

pulse

)

±

40 (

PW

1ms, Du

1%

)

A

E

AS

*

120

mJ

(Ta=25

°

C, with all circuits operating, without heatsink)

W

40 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.13 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=25V, L=2.2mH, I

D

=10A, unclamped, R

G

=50

,see Fig. E on page 15.

P

T

1

3

2

4

6

5

9

7

8

12

10

11

0

2

4

0

4

2

6

8

10

6

V

DS

  (V)

I

D

  (A)

8

10

4.5V

V

GS

=4V

6V

5V

1

0

V

0

2

4

0

4

2

6

8

10

6

V

GS

  (V)

I

D

  (A)

8

(V

DS

=10V)

T

C

=–40

°

C

T

C

=25

°

C

T

C

=125

°

C

0

0

150

100

50

200

250

300

I

D

  (A)

R

DS  (ON)

 (m

)

10

8

6

4

2

(V

GS

=10V)

0.05

0.5

0.1

0.3

1

0.5

5

10

20

I

D

  (A)

Re  (yfs) (S)

1

10

5

(V

DS

=10V)

T

C

=–40

°

C

T

C

=25

°

C

T

C

=125

°

C

–40

0

0

200

100

300

400

500

T

C

  (

°

C)

R

DS  (ON)

 (m

)

100

50

150

I

D

=5A

V

GS

=10V

0

20

10

30

10

100

50

500

1000

3000

40

50

V

DS

  (V)

Capacitance  (pF)

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

0

0.5

1.0

1.5

0

4

2

6

8

10

V

SD

  (V)

I

DR

  (A)

5.1

0V

V

G

S

=

0V

0.5

1

5

100

50

10

0.01

0.05

0.1

0.5

5

1

10

50

500

V

DS

  (V)

I

D

  (A)

10ms  (1shot)

100

µ

s

1ms

(T

C

=25

°

C)

I

D  (

pulse)  max

R

DS

  (O

N)

LIMITED

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

N-channel

General purpose

External dimensions

A

 • • • 

SLA (12-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

72

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

D

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5046

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

200

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=200V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=1mA

Re

(

yfs

)

2.5

5.0

S

V

DS

=10V, I

D

=3.5A

R

DS(ON)

270

350

m

V

GS

=10V, I

D

=3.5A

Ciss

450

pF

V

DS

=10V,

Coss

280

pF

f=1.0MHz,

Crss

120

pF

V

GS

=0V

td

(

on

)

20

ns

I

D

=3.5A,

t

r

30

ns

V

DD

100V,

td

(

off

)

55

ns

R

L

=28.6

, V

GS

=10V,

t

f

75

ns

 see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=7A, V

GS

=0V

t

rr

450

ns

I

SD

=

±

100mA

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

200

V

V

GSS

±

20

V

I

D

±

7

A

I

D(

pulse

)

±

15 (

PW

1ms, Du

1%

)

A

E

AS

*

55

mJ

(Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=25V, L=2.0mH, I

D

=7A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

2

3

1

4

5

6

7

8

9

10

11

12

0

2

4

6

8

0

3

2

1

4

5

7

6

10

V

DS

  (V)

I

D

  (A)

10V

6

V

5.5V

5V

4.5V

V

GS

=4V

0

2

4

0

4

3

2

1

5

6

7

6

V

GS

  (V)

I

D

  (A)

8

(V

DS

=10V)

T

C

=–40

°

C

25

°

C

125

°

C

0

2

1

3

4

0

0.2

0.1

0.3

0.4

0.5

5

I

D

  (A)

R

DS  (ON)

 (

)

6

7

(V

GS

=10V)

0.05

0.5

0.1

0.3

1

0.5

5

10

I

D

  (A)

Re  (yfs) (S)

1

7

5

(V

DS

=10V)

T

c

=–

40

°

C

25

°

C

125

°

C

–40

0

0

0.4

0.2

0.6

0.8

1.0

50

T

C

  (

°

C)

R

DS  (ON)

 (

)

100

150

I

D

=3.5A

V

GS

=10V

0

20

10

30

10

5

3

100

50

500

1000

2000

40

50

V

DS

  (V)

Capacitance  (pF)

Ciss

Coss

Crss

V

GS

=0V

f=1MH

Z

0

0.5

1.0

1.5

0

4

3

2

1

5

6

7

V

SD

  (V)

I

DR

  (A)

V

G

S

=

0

V

5.10V

5

3

10

100

50

0.1

0.05

1

0.5

5

10

20

500

V

DS

  (V)

I

D

  (A)

1m

s

10ms  (1shot)

100

µ

s

R

DS  (ON)

 LIMITED

ID  (pulse)  max

(T

C

=25

°

C)

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

N-channel

General purpose

External dimensions

A

 • • • 

SLA (12-pin)

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

73

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5047

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

150

V

V

GSS

±

20

V

I

D

±

10

A

I

D(

pulse

)

±

40 (

PW

1ms, Du

1%

)

A

E

AS

*

280

mJ

(Ta=25

°

C, with all circuits operating, without heatsink)

W

40 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.13 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=25V, L=4.7mH, I

D

=10A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

(T

a

=25

°

C)

Symbol

Unit

Specification

V

(BR)DSS

150

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=150V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

10

15

S

V

DS

=10V, I

D

=5A

70

85

m

V

GS

=10V, I

D

=5A

80

100

m

V

GS

=4V, I

D

=5A

Ciss

2000

pF

V

DS

=10V, f=1.0MHz,

Coss

470

pF

V

GS

=0V

td

(

on

)

35

ns

I

D

=5A,

t

r

40

ns

V

DD

70V,

td

(

off

)

150

ns

R

L

=14

, V

GS

=5V,

t

f

50

ns

 

see Fig. 3 on page 16.

V

SD

0.9

1.5

V

I

SD

=10A, V

GS

=0V

t

rr

500

ns

I

SD

=

±

100mA

Specification

min

typ

max

R

DS(ON)

1

3

2

4

6

5

7

9

8

10

12

11

0

2

4

6

8

0

4

2

10

8

6

10

V

DS

  (V)

I

D

  (A)

V

GS

=10V

3V

2.8V

2.6V

2.4V

0

1

2

0

6

4

2

8

10

3

V

GS

  (V)

I

D

  (A)

4

(V

DS

=10V)

TC=

40

°

C

25

°

C

125

°

C

0

4

2

6

0

50

100

150

8

I

D

  (A)

R

DS  (ON)

 (m

)

10

V

GS

=4V

10V

0.05

1

0.5

0.1

0.3

5

1

0.5

10

50

I

D

  (A)

Re  (yfs) (S)

10

5

T

C

=–40

°

C

25

°

C

125

°

C

(V

DS

=10V)

–40

0

0

50

100

150

200

50

T

C

  (

°

C)

R

DS  (ON)

 (m

)

100

150

V

GS

=4V

10V

(I

D

=5A)

0

20

10

30

50

100

500

1000

8000

5000

40

50

V

DS

  (V)

Capacitance  (pF)

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

0

0.5

1.0

1.5

0

4

2

6

8

10

V

SD

  (V)

I

DR

  (A)

0V

V

GS

=5V

5

1

0.5

10

200

100

50

0.1

0.05

0.01

1

0.5

5

10

50

V

DS

  (V)

I

D

  (A)

1ms

10ms  (1shot)

100

µ

s

R

DS (ON)  

LIMITED

I

D

 (pulse) max

(T

C

=25

°

C)

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

W

ith

 In

fin

ite

 H

ea

ts

in

k

Without Heatsink

N-channel

General purpose

External dimensions

A

 • • • 

SLA (12-pin)

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

74

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

D

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5049

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

250

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=250V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=1mA

Re

(

yfs

)

2.5

5.0

S

V

DS

=10V, I

D

=3.5A

R

DS(ON)

400

500

m

V

GS

=10V, I

D

=3.5A

Ciss

450

pF

V

DS

=10V, f=1.0MHz,

Coss

280

pF

V

GS

=0V

td

(

on

)

20

ns

I

D

=3.5A,

t

r

30

ns

V

DD

100V,

td

(off)

55

ns

R

L

=28.6

, V

GS

=10V,

t

f

75

ns

 see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=7A, V

GS

=0V

t

rr

600

ns

I

SD

=

±

100mA

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

250

V

V

GSS

±

20

V

I

D

±

7

A

I

D(

pulse

)

±

15 (

PW

1ms, Du

1%

)

A

E

AS

*

55

mJ

5 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

35 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=25V, L=2.0mH, I

D

=7A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

2

3

1

4

5

6

7

8

9

10

11

12

0

2

4

6

8

0

3

2

1

4

5

7

6

10

V

DS

  (V)

I

D

  (A)

10V

6V

5.5V

5V

V

GS

=4V

4.5V

0

2

4

6

0

5

4

3

2

1

6

7

8

V

GS

  (V)

I

D

  (A)

(V

DS

=10V)

T

C

=–40

°

C

25

°

C

125

°

C

0

2

1

3

4

0

0.2

0.1

0.3

0.4

0.5

5

I

D

  (A)

R

DS  (ON)

 (

)

6

7

(V

GS

=10V)

0.05

1

0.5

0.1

0.3

1

0.5

5

10

I

D

  (A)

Re  (yfs) (S)

7

5

T

C

=–

40

°

C

25

°

C

125

°

C

(V

DS

=10V)

–40

0

0

0.4

0.2

0.6

0.8

1.0

T

C

  (

°

C)

R

DS  (ON)

 (

)

100

50

150

I

D

=3.5A

V

GS

=10V

0

20

10

30

2

10

5

50

100

2000

1000

500

40

50

V

DS

  (V)

Capacitance  (pF)

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

0

0.5

1.0

1.5

0

3

2

1

5

4

6

7

V

SD

  (V)

I

DR

  (A)

V

GS

=0V

5.10V

3

5

10

50

0.05

0.1

5

1

0.5

10

20

100

500

V

DS

  (V)

I

D

  (A)

(T

C

=25

°

C)

10ms  (1shot)

1ms

100

µ

s

 R

DS

 (on)  LIMITED

 I

D

  (pulse)  max

25

30

35

40

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

N-channel

General purpose

External dimensions

A

 • • • 

SLA (12-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

75

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5052

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

150

V

V

GSS

±

20

V

I

D

±

10

A

I

D(

pulse

)

±

40 (

PW

1ms, Du

1%

)

A

E

AS

*

160

mJ

5 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

40 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j–a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j–c

3.13 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=25V, L=2.7mH, I

D

=10A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

150

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=150V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

8

13.5

S

V

DS

=10V, I

D

=5A

90

115

m

V

GS

=10V, I

D

=5A

105

130

m

V

GS

=4V, I

D

=5A

Ciss

1500

pF

V

DS

=10V, f=1.0MHz,

Coss

360

pF

V

GS

=0V

td

(

on

)

30

ns

I

D

=5A,

t

r

35

ns

V

DD

70V,

td

(

off

)

100

ns

R

L

=14

, V

GS

=5V,

t

f

40

ns

 

see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=10A, V

GS

=0V

t

rr

420

ns

I

SD

=

±

100mA

Specification

min

typ

max

R

DS(ON)

0

2

4

0

4

2

6

8

10

6

V

DS

  (V)

I

D

  (A)

8

10

V

GS

=10V

3.5V

3V

2.8V

2.6V

0

1

2

0

4

2

6

8

10

3

V

GS

  (V)

I

D

  (A)

4

5

T

C

=–40

°

C

25

°

C

125

°

C

(V

DS

=10V)

0

2

4

6

0

100

50

150

I

D

  (A)

R

DS  (ON)

 (m

)

8

10

V

GS

=4V

10V

0.05

1

0.5

0.1

0.5

0.3

5

1

10

50

I

D

  (A)

Re  (yfs) (S)

10

5

T

C

=–40

°

C

25

°

C

125

°

C

(V

DS

=10V)

–40

0

0

100

50

150

200

250

300

T

C

  (

°

C)

R

DS  (ON)

 (m

)

150

100

50

V

GS

=4V

10V

(I

D

=5A)

0

20

10

30

30

100

50

500

1000

5000

40

50

V

DS

  (V)

Capacitance  (pF)

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

0

0.5

1.0

1.5

0

4

2

6

8

10

V

SD

  (V)

I

DR

  (A)

V

G

S

=

0

V

5V

0.5

1

5

100

200

50

10

0.01

0.05

0.1

0.5

5

1

10

50

V

DS

  (V)

I

D

  (A)

(T

C

=25

°

C)

10

m

s  (1

sh

ot)

10

0

µ

s

1ms

R

DS (ON)

 LIMITED

I

D

 (pulse) max 

25

30

35

40

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

1

3

2

4

6

5

7

9

8

10

12

11

N-channel

General purpose

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

76

FET1

FET2

FET3

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

min

typ

max

V

(BR)DSS

150

V

I

D

=100

µ

A, V

GS

=0V

150

V

I

D

=100

µ

A, V

GS

=0V

150

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

100

nA

V

GS

=20V

100

nA

V

GS

=20V

100

nA

V

GS

=20V

I

DSS

100

µ

A

V

DS

=150V, V

GS

=0V

100

µ

A

V

DS

=150V, V

GS

=0V

100

µ

A

V

DS

=150V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

7

12

S

V

DS

=10V, I

D

=3.5A

3

5.5

S

V

DS

=10V, I

D

=2.5A

4

9

S

V

DS

=10V, I

D

=3.5A

R

DS(ON)

80

105

m

V

GS

=10V, I

D

=3.5A

330

440

m

V

GS

=10V, I

D

=2.5A

150

200

m

V

GS

=10V, I

D

=3.5A

85

115

m

V

GS

=4V, I

D

=3.5A

370

480

m

V

GS

=4V, I

D

=2.5A

170

230

m

V

GS

=4V, I

D

=3.5A

Ciss

1900

pF

V

DS

=10V,

380

pF

V

DS

=10V,

870

pF

V

DS

=10V,

Coss

630

pF

f=1.0MHz,

95

pF

f=1.0MHz,

320

pF

f=1.0MHz,

Crss

420

pF

V

GS

=0V

25

pF

V

GS

=0V

210

pF

V

GS

=0V

td

(

on

)

35

ns

I

D

=3.5A,

25

ns

I

D

=2.5A,

25

ns

I

D

=3.5A,

t

r

70

ns

V

DD

70V,

50

ns

V

DD

70V,

55

ns

V

DD

70V,

td

(

off

)

140

ns

R

L

=20

,

55

ns

R

L

=28

,

80

ns

R

L

=20

,

t

f

90

ns

V

GS

=5V, see Fig.3 on page 16.

40

ns

V

GS

=5V, see Fig.3 on page 16.

50

ns

V

GS

=5V, see Fig.3 on page 16.

V

SD

1.0

1.5

V

I

SD

=7A, V

GS

=0V

1.1

1.5

V

I

SD

=5A, V

GS

=0V

1.0

1.5

V

I

SD

=7A, V

GS

=0V

t

rr

620

ns

I

F

=

±

100mA

180

ns

I

F

=

±

100mA

500

ns

I

F

=

±

100mA

Symbol

Ratings

Unit

FET1

FET2

FET3

V

DSS

150

V

V

GSS

+20, –10

V

I

D

±

7

±

5

±

7

A

I

D(

pulse

)

*1

±

15

±

10

±

15

A

E

AS

*2

15

mJ

I

AS

5

A

P

T

5 (T

a

=25

°

C, with all circuits operating, without heatsink)

W

35 (T

c

=25

°

C, with all circuits operating, with infinite heatsink)

W

θ 

j-a

25 (Junction-Air, T

a

=25

°

C, with all circuits operating)

°

C/W

θ  

j-c

3.57 (Junction-Case, T

c

=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

–40 to +150

°

C

SLA5054

External dimensions

A

 • • • 

SLA (15-pin)

N-channel

General purpose

Absolute maximum ratings

Equivalent circuit diagram

*1 : PW

100

µ

s, duty

50%

*2 : V

DD

=25V, L=1.0mH, I

L

=5A unclamped, R

G

=50

, see Fig. E on page 15.

(T

a

=25

°

C)

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

FET1

FET2

FET3

I

D  

(A)

5

6

7

4

3

2

1

0

V

DS  

(V)

0

2

4

6

8

10

V

GS

=2.0V

2.2V

2.4V

2.6V

3.0V

1

0

V

I

D

-V

GS

 Characteristics (Typical)

FET1

FET2

FET3

R

DS(ON)

-I

D

 Characteristics (Typical)

FET1

FET2

FET3

V

GS

  (V)

I

D

  (A)

T

c=

1

2

5

°

C

25

°

C

5

4

3

2

1

0

0

1

2

3

4

(V

DS

=10V)

40

°

C

V

DS

  (V)

I

D

  (A)

10V

4V

2.8V

2.6V

2.4V

5

4

3

2

1

0

0

2

4

6

8

10

V

GS

=2.2V

V

DS

  (V)

I

D

  (A)

10V

4V

2.8V

2.6V

2.4V

7

6

5

4

3

2

1

0

0

2

4

6

8

10

V

GS

=2.2V

V

GS  

(V)

0

1

2

3

4

I

D  

(A)

5

6

7

4

3

2

1

0

25

°

C

40

°

C

T

C

=125

°

C

V

GS

  (V)

I

D

  (A)

Tc=125

°

C

25

°

C

5

4

7

6

3

2

1

0

0

1

2

3

4

(V

DS

=10V)

40

°

C

I

D  

(A)

0

1

2

3

4

5

6

7

100

90

80

70

60

50

R

DS  (ON) 

(m

)

4V

V

GS

=10V

I

D

  (A)

R

DS  (ON)

  (m

)

4V

400

500

300

200

100

0

0

1

2

3

4

5

V

GS

=10V

R

DS  (ON)

 (m

)

200

150

100

50

0

0

1

2

3

4

5

6

7

I

D

  (A)

V

GS

=10V

4V

Electrical characteristics

(T

a

=25

°

C)

Pin 4 : NC

2

3

1

5

6

7

8

9

10

11

12

15

13

14

FET-1

FET-1

FET-2

FET-2

FET-3

FET-3

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

77

SLA5054

Re

(

yfs

)

-I

Characteristics (Typical)

FET1

FET2

FET3

R

DS(ON)

-T

Characteristics (Typical)

FET1

FET2

FET3

I

DR

-V

SD

 Characteristics (Typical)

FET1

FET2

FET3

P

T

-T

a

 Characteristics

I

D  

(A)

Re  (yfs) (S)

125

°

C

25

°

C

T

C

=–

40

°

C

100

10

0.1

1

0.05

0.1

0.5

1

5

7

(V

DS

=10V)

I

D

  (A)

Re  (yfs) (S)

T

C

=–

40

°

C

  25

°

C

12

5

°

C

10

5

1

0.5

0.3

0.05

0.1

0.5

1

5

(V

DS

=10V)

V

SD

  (V)

I

DR

  (A)

10V

4V

V

GS

=0V

7

6

5

4

3

2

1

0

0

0.5

1.0

1.5

V

SD

  (V)

I

DR

  (A)

10V

4V

V

GS

=0V

5

4

3

2

1

0

0

0.5

1.0

1.5

V

SD

  (V)

I

DR

  (A)

10

V

4V

V

GS

=0V

5

4

7

6

3

2

1

0

0

0.5

1.0

1.5

25

30

35

40

20

15

10

5

0

Without Heatsink

With Infinite Heatsink

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

Capacitance-V

DS

 Characteristics (Typical)

FET1

FET2

FET3

Safe Operating Area (SOA)

FET1

FET2

FET3

V

DS

  (V)

(T

C

=25

°

C)

I

D

  (A)

I

D

  (pulse)  MAX

1-Circuit Operation

R

DS  (

on

)

  LIMITED

10ms  (1shot)

1ms

100

µ

s

20

10

5

1

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

V

DS

  (V)

I

D

  (A)

I

D

  (pulse)  MAX

R

DS

  (o

n)  L

IM

IT

ED

10ms  (1shot)

1ms

100

µ

s

20

10

5

1

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

(T

C

=25

°

C)

1-Circuit Operation

V

DS

  (V)

I

D

  (A)

10ms  (1shot)

1ms

100

µ

s

20

10

5

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

I

 (pulse)  MAX

R

DS  

(on)  LIMITED

(T

C

=25

°

C)

1-Circuit Operation

I

D

  (A)

Re  (yfs) (S)

T

C

=–

40

°

C

20

10

5

1

0.5

0.3

0.05

0.1

0.5

1

5

7

125

°

C

  25

°

C

(V

DS

=10V)

T

C  

(

°

C)

R

DS  (ON) 

(m

)

200

100

0

–40

0

50

100

150

(I

D

=3.5A)

4V

V

GS

=10V

T

C

  (

°

C)

R

DS  (ON)

  (

)

4V

V

GS

=10V

1.0

0.5

0

–40

0

50

100

150

(I

D

=2.5A)

T

C

  (

°

C)

R

DS  (ON)

 (m

)

4V

V

GS

=10V

500

400

200

100

300

0

–40

0

50

100

150

(I

D

=3.5A)

V

DS  

(V)

0

10

20

30

40

50

Capacitance  (pF)

10000

1000

100

50

V

GS

=0V

f=1MHz

Coss

Crss

Ciss

Capacitance  (pF)

Coss

Crss

1000

100

500

10

50

0

10

20

30

40

50

V

DS

  (V)

Ciss

V

GS

=0V

f=1MHz

Capacitance  (pF)

Coss

Crss

5000

500

1000

40

50

100

0

10

20

30

40

50

V

DS

  (V)

Ciss

V

GS

=0V

f=1MHz

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

78

FET 1

FET 2

FET 1

FET 1

FET 2

FET 2

FET 1

FET 2

Characteristic curves

(T

a

=25

°

C)

Symbol

Unit

V

DSS

150

V

V

GSS

+20, –10

V

I

D

±

5

±

7

A

I

D (pulse)

*

±

10

±

15

A

5 (T

a

=25

°

C, with all circuits operating, without heatsink)

W

35 (T

c

=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

 

j-a

25  (Junction-Air, T

a

=25

°

C, with all circuits operating)

°

C/W

θ

 

j-c

3.57 (Junction-Case, T

c

=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000  (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : PW

100

µ

s, duty

50%

SLA5055

External dimensions

A

 • • • 

SLA (12-pin)

Equivalent circuit diagram

Absolute maximum ratings

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

V

DS

  (V)

I

D

  (A)

10V

4V

2.8V

2.6V

2.4V

V

GS

=2.2V

5

4

3

2

1

0

0

2

4

6

8

10

I

D

 (A)

R

DS  (ON)

 (m

)

4V

400

500

300

200

100

0

0

1

2

3

4

5

V

GS

=10V

T

C

  (

°

C)

(I

D

=2.5A)

R

DS  (ON)

 (

)

4V

V

GS

=10V

1.0

0.5

0

–40

0

50

100

150

V

GS

  (V)

I

D

  (A)

Tc=125

°

C

2

5

°

C

5

4

3

2

1

0

0

1

2

3

4

(V

DS

=10V)

40

°

C

V

DS

  (V)

I

D

  (A)

10V

4V

2.8V

2.6V

2.4V

7

6

5

4

3

2

1

0

0

2

4

6

8

10

V

GS

=2.2V

R

DS  (ON)

 (m

)

200

150

100

50

0

0

1

2

3

4

5

6

7

I

D

  (A)

V

GS

=10V

4V

T

C

  (

°

C)

R

DS  (ON)

  (m

)

4V

V

GS

=10V

500

400

200

100

300

0

-40

0

50

100

150

(I

D=

3.5A)

V

GS

  (V)

I

D

  (A)

Tc=12

5

°

C

25

°

C

5

4

3

2

1

0

0

1

2

3

4

(V

DS

=10V)

40

°

C

N-channel

General purpose

P

T

2

3

1

4

5

6

7

8

9

10

FET-1

FET-2

FET-2

FET-2

FET-2

11

12

Ratings

FET 1

FET 2

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

79

FET 1

FET 2

FET 1

FET 1

FET 2

FET 2

FET 1

FET 2

Characteristic curves

(T

a

=25

°

C)

FET 1

FET 2

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

150

V

I

D

=100

µ

A, V

GS

=0V

150

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

100

nA

V

GS

=20V

100

nA

V

GS

=20V

I

DSS

100

µ

A

V

DS

=150V, V

GS

=0V

100

µ

A

V

DS

=150V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(yfs)

3

5.5

S

V

DS

=10V, I

D

=2.5A

4

9

S

V

DS

=10V, I

D

=3.5A

330

440

m

V

GS

=10V, I

D

=2.5A

150

200

m

V

GS

=10V, I

D

=3.5A

370

480

m

V

GS

=4V, I

D

=2.5A

170

230

m

V

GS

=4V, I

D

=3.5A

Ciss

380

pF

V

DS

=10V,

870

pF

V

DS

=10V,

Coss

95

pF

f=1.0MHz,

320

pF

f=1.0MHz,

Crss

25

pF

V

GS

=0V

210

pF

V

GS

=0V

td 

(on)

25

ns

I

D

=2.5A,

25

ns

I

D

=3.5A,

t

r

50

ns

V

DD

70V,

55

ns

V

DD

70V,

td 

(off)

55

ns

R

L

=28

,

80

ns

R

L

=20

, V

GS

=5V,

t

f

40

ns

V

GS

=5V, see Fig.3 on page 16.

50

ns

see Fig.3 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

1.0

1.5

V

I

SD

=7A, V

GS

=0V

t

rr

180

ns

I

F

=

±

100mA

500

ns

I

F

=

±

100mA

SLA5055

Electrical characteristics

Re

(yfs)

-I

D

 Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

Characteristics

I

D

  (A)

Re  (yfs) (S)

T

C

=–

40

°

C

  25

°

C

12

5

°

C

10

5

1

0.5

0.3

0.05

0.1

0.5

1

5

(V

DS

=10V)

Capacitance  (pF)

Coss

Crss

1000

100

500

10

50

0

10

20

30

40

50

V

DS

  (V)

Ciss

V

GS

=0V

f=1MHz

V

SD

  (V)

I

DR

  (A)

10V

4V

V

GS

=0V

5

4

3

2

1

0

0

0.5

1.0

1.5

V

DS

  (V)

(T

C

=25

°

C)

I

D

  (A)

I

D

  (pulse)  MAX

1-Circuit Operation

R

DS

 (on) LIMITED

10ms  (1shot)

1ms

100

µ

s

20

10

5

1

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

25

30

35

40

20

15

10

5

0

Without Heatsink

With Infinite Heatsink

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

I

D

  (A)

Re  (yfs) (S)

T

C

=–

40

°

C

20

10

5

1

0.5

0.3

0.05

0.1

0.5

1

5

7

125

°

C

  25

°

C

(V

DS

=10V)

Capacitance  (pF)

Coss

Crss

5000

500

1000

40

50

100

0

10

20

30

40

50

V

DS

  (V)

Ciss

V

GS

=0V

f=1MHz

V

SD

  (V)

I

DR

  (A)

10V

4V

V

GS

=0V

5

4

7

6

3

2

1

0

0

0.5

1.0

1.5

V

DS

  (V)

I

D

  (A)

10m

s  (1shot)

1ms

100

µ

s

20

10

5

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

I

D

  (pulse)  MAX

R

DS

 (on) LIMITED

(T

C

=25

°

C)

1-Circuit Operation

R

DS(ON)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

80

(T

a

=25

°

C)

Symbol

Unit

V

DSS

200

V

V

GSS

±

20

V

I

D

±

7

A

I

D(pulse) *

±

15

A

5 (T

a

=25

°

C, with all circuits operating, without heatsink)

W

35 (T

c

=25

°

C, with all circuits operating, with infinite heatsink)

W

θ 

j-a

25 (Junction-Air, T

a

=25

°

C, with all circuits operating)

°

C/W

θ 

j-c

3.57 (Junction-Case, T

c

=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

–40 to +150

°

C

* : PW

100

µ

s, duty

50%

SLA5057

External dimensions

A

 • • • 

SLA (15-pin)

Equivalent circuit diagram

Absolute maximum ratings

N-channel

General purpose

P

T

Pin 4 : NC

Ratings

FET 1

FET 2

2

3

1

5

6

7

8

9

10

11

12

15

13

14

FET-1

FET-1

FET-2

FET-2

FET-2

FET-2

(T

a

=25

°

C)

FET 1

FET 2

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

200

V

I

D

=100

µ

A, V

GS

=0V

200

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=200V, V

GS

=0V

100

µ

A

V

DS

=200V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=1mA

2.0

4.0

V

V

DS

=10V, I

D

=1mA

Re

(yfs)

4.5

6.5

S

V

DS

=10V, I

D

=3.5A

2.5

5.0

S

V

DS

=10V, I

D

=3.5A

R

DS(ON)

130

175

m

V

GS

=10V, I

D

=3.5A

270

350

m

V

GS

=10V, I

D

=3.5A

Ciss

850

pF

V

DS

=10V,

450

pF

V

DS

=10V,

Coss

550

pF

f=1.0MHz,

280

pF

f=1.0MHz,

Crss

250

pF

V

GS

=0V

120

pF

V

GS

=0V

td 

(on)

20

ns

I

D

=3.5A,

20

ns

I

D

=3.5A,

t

r

25

ns

V

DD

100V,

30

ns

V

DD

100V,

td 

(off)

90

ns

R

L

=28.6

,

55

ns

R

L

=28.6

,

t

f

70

ns

V

GS

=10V, see Fig. 3 on page 16.

75

ns

V

GS

=10V, see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=7A, V

GS

=0V

1.0

1.5

V

I

SD

=7A, V

GS

=0V

t

rr

500

ns

I

F

=

±

100mA

450

ns

I

F

=

±

100mA

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

81

SLA5058

External dimensions

A

 • • • 

SLA (12-pin)

N-channel

General purpose

Absolute maximum ratings

Electrical characteristics

(T

a

=25

°

C)

Equivalent circuit diagram

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

D

 Characteristics (Typical)

Re (yfs)-I

D

 Characteristics (Typical)

R

DS (ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-Ta Characteristics

V

DS

  (V)

I

D

  (A)

10V

4V

2.8V

2.6V

2.4V

V

GS

=2.2V

7

6

5

4

3

2

1

0

0

2

4

6

8

10

V

GS

  (V)

I

D

  (A)

T

c=

1

2

5

°

C

25

°

C

5

4

7

6

3

2

1

0

0

1

2

3

4

(V

DS

=10V)

40

°

C

R

DS (ON)

 (m

)

4V

V

GS

=10V

200

150

100

50

0

0

1

2

3

4

5

6

7

I

D

  (A)

I

D

  (A)

(V

DS

=10V)

Re  (yfs) (S)

T

C

=–

40

°

C

20

10

5

1

0.5

0.3

0.05

0.1

0.5

1

5

7

12

5

°

C

  25

°

C

T

C

  (

°

C)

(I

D

=3.5A)

R

DS  (ON)

 (m

)

4V

V

GS

=1

0V

500

400

200

100

300

0

–40

0

50

100

150

Capacitance  (pF)

Coss

Crss

5000

500

1000

40

50

100

0

10

20

30

40

50

V

DS

  (V)

Ciss

V

GS

=0V

f=1MHz

V

SD

 (V)

I

DR

  (A)

10V

4V

V

GS

=0V

5

4

7

6

3

2

1

0

0

0.5

1.0

1.5

V

DS

  (V)

I

D

  (A)

T

C

=25

°

C

1-Circuit Operation

10ms (1shot)

1ms

100

µ

s

20

10

5

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

I

D

 (pulse) MAX

R

DS

 (on) LIMITED

25

30

35

40

20

15

10

5

0

Without Heatsink

With Infinite Heatsink

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

2

3

1

4

5

6

7

8

9

10

11

12

* : V

DD

=25V, L=3.4mH, I

D

=7A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

Symbol

Ratings

Unit

V

DSS

150

V

V

GSS

+20, –10

V

I

D

±

7A

A

I

D (pulse)

±

15 (PW

1ms, Du

1%)

A

E

AS

*

100

mJ

(T

a

=25

°

C, with all circuits operating, without heatsink)

W

35 

(T

c

=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

 

j-a

25  

(Junction-Air, T

a

=25

°

C, with all circuits operating)

°

C/W

θ

 

j-c

3.57 

(Junction-Case, T

c

=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000  (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

Symbol

Specification

Unit

Conditions

min

typ

max

V

(BR)DSS

150

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

100

nA

V

GS

=20V

I

DSS

100

µ

A

V

DS

=150V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

4

9

S

V

DS

=10V, I

D

=3.5A

R

DS(ON)

150

200

m

V

GS

=10V, I

D

=3.5A

170

230

m

V

GS

=4V, I

D

=3.5A

Ciss

870

pF

V

DS

=10V,

Coss

320

pF

f=1.0MHz,

Crss

210

pF

V

GS

=0V

td

(

on

)

25

ns

I

D

=3.5A,

t

r

55

ns

V

DD

70V,

td

(

off

)

80

ns

R

L

=20

,

t

f

50

ns

V

GS

=5V, see Fig. 3 in page 16.

V

SD

1.0

1.5

V

I

SD

=7A, V

GS

=0V

t

rr

500

ns

I

SD

=

±

100mA

(T

a

=25

°

C)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

82

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

8

6

2

4

0

0

2

4

6

8

10

V

DS

  (V)

I

D

  (A)

4.5V

4.0V

3.5V

V

GS

=3.0V

10V

0

6

8

0

2

6

4

10

I

D

  (A)

V

GS

  (V)

4

2

8

25

°

C

T

a

=40

°

C

(V

DS

=10V)

125

°

C

0.5

0.6

0.4

0.3

0.2

0.1

0

0

2

6

4

8

I

D

  (A)

(T

a

=25

°

C)

R

DS  (ON)

  (

)

V

GS

=4V

V

GS

=10V

–40

0.2

–25

50

25

0

100

125

75

150

0.4

0.3

0.6

0.5

0.8

0.7

T

c

  (

°

C)

I

D

=2A

V

GS

=4V

R

DS  (ON)

  (

)

0

–10

–8

–6

0

V

DS

  (V)

I

D

  (A)

–2

–6

–4

–8

–2

–4

–4.5V

–10V

–4.0V

–3.6V

–3.2V

V

GS

=–2.7V

0

0

–2

0.2

0.4

0.5

0.6

I

D

  (A)

R

DS  (ON)

  (

)

–4

–6

–8

0.3

0.1

(T

a

=25

°

C)

V

GS

= –4V

V

GS

= –10V

–40

0.2

0

0.4

0.6

0.7

0.8

T

c

  (

°

C)

R

DS  (ON)

  (

)

50

100

150

–25

25

75

125

0.5

0.3

I

D

= –2A

V

GS

=–10V

I

D

  (A)

V

GS

  (V)

0

–10

–4

–2

–6

–8

–8

–6

0

–2

–4

T

c

= –40

°

C

125

°

C

25

°

C

(V

DS

=–10V)

SLA5059

10

12

1

7

5

8

3

6

2

4

9

11

(T

a

=25

°

C)

Symbol

Unit

V

DSS

60

–60

V

V

GSS

±

20

20

V

I

D

4

–4

A

I

D(pulse)

8 (PW

1ms, Duty

25%)

–8 (PW

1ms, Duty

25%)

A

5 (Ta=25

°

C, with all circuits operating, without heatsink)

W

30 (Tc=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

j-a

25 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

4.17 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

Ratings

N channel

P channel

N-channel + P-channel

3-phase motor drive

External dimensions

B

 • • • 

SLA (12-pin)

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

83

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5059

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

–60

V

I

D

=–100

µ

A, V

GS

=0V

I

GSS

±

10

µ

A

V

GS

=

±

20V

10

µ

A

V

GS

= 20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

–100

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

–1.0

–2.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

2.5

S

V

DS

=10V, I

D

=2A

3

S

V

DS

=–10V, I

D

=–2A

R

DS(ON)

0.55

V

GS

=4V, I

D

=2A

0.55

V

GS

=–10V, I

D

=–2A

Ciss

150

pF

V

DS

=10V, f=1.0MHz,

320

pF

V

DS

=–10V, f=1.0MHz,

Coss

70

pF

V

GS

=0V

130

pF

V

GS

=0V

Crss

15

pF

40

pF

td

(on)

12

ns

I

D

=2A, V

DD

20V,

20

ns

I

D

=–2A, V

DD

–20V,

t

r

40

ns

 

R

L

=10

, V

GS

=5V,

95

ns

R

L

=10

, V

GS

=–5V,

td

(off)

40

ns

see Fig. 3 on page 16.

70

ns

  

see Fig. 4 on page 16.

tf

25

ns

60

ns

V

SD

1.2

V

I

SD

=4A, V

GS

=0V

–1.1

V

I

SD

=–4A, V

GS

=0V

I

SD

=2A, V

GS

=0V,

I

SD

=–2A, V

GS

=0V,

t

rr

75

ns

di/dt=100A/

µ

s

75

ns

di/dt=100A/

µ

s

Electrical characteristics

0.1

0.005

0.1

1

1

10

I

D

  (A)

Re  (yfs) (S)

8

T

c

= –40

°

C

25

°

C

125

°

C

(V

DS

=10V)

0

10

20

30

40

50

1

100

1000

V

DS

  (V)

Capacitance  (pF)

10

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

0.0

1.0

2.0

1.5

2

0

8

I

DR

  (A)

V

SD

  (V)

0.5

4

6

V

GS

=10V

4V

0V

1

10

100

1

0.1

10

I

D

  (A)

V

DS

  (V)

R

DS  (on)  

LIMITED

10ms

 (T

c

=25

°

C)

1ms

100

µ

s

0.1

–0.1

1

10

I

D

  (A)

Re  (yfs) (S)

–1

–8

–0.005

T

c

=–40

°

C

25

°

C

125

°

C

(V

DS

=–10V)

0

–10

–20

–30

–40

–50

10

100

1000

V

DS

  (V)

Capacitance  (pF)

1

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

0.0

–1.0

–2.0

–1.5

–2

0

–8

I

DR

  (A)

V

SD

  (V)

–0.5

–4

–6

V

GS

=–10V

–4V

0V

–1

–0.1

–10

–100

–1

 –10

I

D

  (A)

V

DS

  (V)

100

µ

s

1ms

10ms

R

DS  (ON)  

LIMITED

(T

c

=25

°

C)

25

30

35

40

20

15

10

5

0

Without Heatsink

With Infinite Heatsink

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

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background image

84

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

SLA5060

10

12

1

7

5

8

3

6

2

4

9

11

(T

a

=25

°

C)

Symbol

Unit

V

DSS

60

–60

V

V

GSS

±

20

±

20

V

I

D

6

–6

A

I

D(pulse)

10 (PW

1ms, duty

25%)

–10 (PW

1ms, duty

25%)

A

,

5 (Ta=25

°

C, with all circuits operating, without heatsink)

W

35 (Tc=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

j-a

25 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

3.57 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

Ratings

N channel

P channel

N-channel + P-channel

3-phase motor drive

External dimensions

A

 • • • 

SLA (12-pin)

Absolute maximum ratings

Equivalent circuit diagram

0

2

10

10

8

4

0

V

DS 

(V)

I

(A)

4

6

8

6

2

(T

a

=25

°

C)

V

GS

=2.5V

2.7V

3.0V

3.3V

3.5V

3.7V

4V

10V

0

1

7

10

I

D  

(A)

2

3

4

5

6

8

9

0

0.10

0.05

0.15

0.25

0.20

0.30

R

DS  (ON) 

(

)

4V

V

GS

=10V

(T

a

=25

°

C)

---40

0

50

100

150

T

C  

(

°

C)

0

0.10

0.05

0.20

0.15

0.30

0.25

0.35

R

DS (ON) 

(

)

(I

D

=3A)

4V

V

GS

=10V

0

1

2

3

4

V

GS  

(V)

5

6

0

8

10

I

D  

(A)

4

2

(V

DS

=10V)

25

°

C

–40

°

C

T

a

=125

°

C

0

---2

---10

V

DS  

(V)

---4

---6

---8

–2.7V

–3.0V

–3.3V

–3.5V

–3.7V

10V

4

V

V

GS

=–2.5V

(T

a

=25

°

C)

---10

---8

---4

0

I

D  

(A)

---6

---2

V

GS  

(V)

0

---1

---5

---2

---3

---4

I

D  

(A)

---10

---8

---9

0

---2

---1

---3

---4

---5

---6

---7

T

a

=–40

°

C

25

°

C

–40

°

C

(V

DS

=---10V)

0

0.10

0.20

0.25

0.30

R

DS (ON) 

(

)

0.15

0.05

0

---2

I

D  

(A)

---4

---6

---8

---10

–10V

V

GS

=–4V

(T

a

=25

°

C)

---40

0

50

100

150

T

C  

(

°

C)

0

0.20

0.25

0.30

0.35

R

DS (ON) 

(

)

0.10

0.15

0.05

(I

D

=---3A)

V

GS

=–

4V

–10V

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background image

85

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

0.1

1

10

Re (yfs) (S)

0.05

1

I

D  

(A)

10

0.1

25

°

C

125

°

C

T

a

=–40

°

C

(V

DS

=10V)

–0.1

–1

–10

I

D  

(A)

–0.05

0.1

1

10

Re (yfs) (S)

(V

DS

=---10V)

25

°

C

125

°

C

T

a

=–40

°

C

0

1.0

1.5

V

SD  

(V)

0.5

0

6

8

10

I

DR  

(A)

4

2

4V

0V

V

G

S

=–

10V

(T

a

=25

°

C)

0

---1.5

V

SD  

(V)

---1.0

---0.5

I

DR  

(A)

---10

---8

0

---6

---2

---4

–4

V

0V

V

G

S

=–

10V

(T

a

=25

°

C)

0.1

1

10

100

V

DS  

(V)

0.1

1

10

20

I

D  

(A)

R

DS (ON)

LIM

IT

E

D

      

100

µ

s

1ms

10

m

s

T

C

=25

°

C

SINGLE PULSE

–0.1

–1

–10

–100

V

DS  

(V)

–0.1

–10

–20

I

D  

(A)

–1

T

C

=25

°

C

SINGLE PULSE

R

D

S

 (O

N

)

      

LIM

IT

E

D

1ms

10

m

s

100

µ

s

25

30

35

40

20

15

10

5

0

Without Heatsink

With Infinite Heatsink

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

With Silicon Grease
Natural Cooling
All Circuits Operating

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

–60

V

I

D

=–100

µ

A, V

GS

=0V

I

GSS

±

10

µ

A

V

GS

=

±

20V

±

10

µ

A

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

–100

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

–1.0

–2.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

5.5

S

V

DS

=10V, I

D

=3A

6

S

V

DS

=–10V, I

D

=–3A

R

DS(ON)

0.22

V

GS

=4V, I

D

=3A

0.22

V

GS

=–10V, I

D

=–3A

Ciss

320

pF

V

DS

=10V, f=1.0MHz,

790

pF

V

DS

=–10V, f=1.0MHz,

Coss

160

pF

V

GS

=0V

310

pF

V

GS

=0V

Crss

35

pF

90

pF

td

(on)

16

ns

I

D

=3A, V

DD

=20V,

40

ns

I

D

=–3A, V

DD

=20V,

t

r

65

ns

 

R

L

=6.67

, V

GS

=5V,

110

ns

R

L

=6.67

, V

GS

=–5V,

td

(off)

70

ns

see Fig. 3 on page 16.

160

ns

  

see Fig. 4 on page 16.

t

f

45

ns

80

ns

V

SD

1.2

V

I

SD

=6A, V

GS

=0V

–1.1

V

I

SD

=–6A, V

GS

=0V

I

SD

=3A, V

GS

=0V,

I

SD

=–3A, V

GS

=0V,

t

rr

65

ns

di/dt=100A/

µ

s

85

ns

di/dt=100A/

µ

s

Electrical characteristics

SLA5060

0

10

20

30

40

50

V

DS 

(V)

10

100

2000

Capacitance (pF)

1000

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

(T

a

=25

°

C)

0

–10

–20

–30

–40

–50

V

DS  

(V)

100

1000

2000

Capacitance (pF)

10

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

N-ch

P-ch

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

86

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

SLA5061

External dimensions

A

 • • • 

SLA (12-pin)

N-channel+P-channel

3-phase motor drive

(T

a

=25

°

C)

Symbol

Unit

V

DSS

60

–60

V

V

GSS

±

20

±

20

V

I

D

10

–6

A

I

D(pulse)

15 (PW

1ms, duty

25%)

–15 (PW

1ms, duty

25%)

A

5 (Ta=25

°

C, with all circuits operating, without heatsink)

W

40 (Tc=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

j-a

25 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

3.125 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

Ratings

N channel

P channel

Absolute maximum ratings

Equivalent circuit diagram

10

12

1

7

5

8

3

6

2

4

9

11

0

2

10

 V

DS  

(V)

4

6

8

15

12

14

4

6

0

 I

D  

(A)

8

10

2

V

GS

=2.7V

3.0V

3.3V

3.5V

4.0V

10V

(T

a

=25

°

C)

0

1

2

3

4

V

GS  

(V)

5

0

I

D  

(A)

2

4

6

8

10

12

14

15

(V

DS

=10V)

25

°

C

–40

°

C

T

C

=125

°

C

0

1

7

10 11 12 13 14 15

 I

D  

(A)

2 3

4

5

6

8

9

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

 R

DS (ON) 

(

)

T

a

=25

°

C

V

GS

=4V

---40

0

50

100

150

T

C  

(

°

C)

0.00

0.02

R

DS (ON) 

(

)

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

I

D

=5A

V

GS

=4V

0

–2

–10

 V

DS  

(V)

–4

–6

–8

0

 I

D  

(A)

–2

–4

–6

–8

–10

–12

–14

–15

V

GS

=–2.7V

–3.0V

–3.3V

–3.5V

–4.0V

1

0

V

(T

a

=25

°

C)

0

–1

–2

–3

–4

V

GS  

(V)

–5

0

I

D  

(A)

–2

–4

–6

–8

–10

–12

–14

–15

(V

DS

=–10V)

25

°

C

–40

°

C

T

C

=125

°

C

0

–1

–7

–10–11 –12–13–14–15

 I

D  

(A)

–2 –3 –4 –5 –6

–8 –9

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

 R

DS (ON) 

(

)

T

a

=25

°

C

V

GS

=–10V

---40

0

50

100

150

T

C  

(

°

C)

0.00

0.02

R

DS (ON) 

(

)

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

I

D

=–5A

V

GS

=–10V

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

87

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5061

0

1.0

1.5

V

SD  

(V)

0.5

0

15

I

DR  

(A)

1

2

3

4

5

6

7

8

9

10

11

12

13

14

0V

4V

V

GS

=10V

(T

a

=25

°

C)

0.05

1

I

D  

(A)

10

20

0.1

0.1

1

10

20

Re (yfs) (S)

25

°

C

125

°

C

T

C

=–40

°

C

(V

DS

=10V)

0.1

1

10

100

V

DS  

(V)

0.1

1

10

20

 I

D  

(A)

1m

s

10

m

s

R

D

S

 (O

N

)

      

LIMITED      

100

µ

s

T

C

=25

°

C

SINGLE PULSE

25

30

35

40

20

15

10

5

0

Without Heatsink

With Infinite Heatsink

With Silicon Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

0

–1.0

–1.5

V

SD  

(V)

–0.5

0

–15

I

DR  

(A)

–1

–2

–3

–4

–5

–6

–7

–8

–9

–10

–11

–12

–13

–14

(T

a

=25

°

C)

0V

–4V

V

GS

=–

10V

–0.1

–1

–10

–100

V

DS  

(V)

–0.1

–1

–10

–20

 I

D  

(A)

1ms

10

m

s

R

DS (ON

)

      

LIMITED      

100ms

T

C

=25

°

C

SINGLE PULSE

–0.05

–1

I

D  

(A)

–10

–20

–0.1

0.1

1

10

20

Re (yfs) (S)

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

–60

V

I

D

=–100

µ

A, V

GS

=0V

I

GSS

±

10

µ

A

V

GS

=

±

20V

10

µ

A

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

–100

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

–1.0

–2.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

8

S

V

DS

=10V, I

D

=5A

8.7

S

V

DS

=–10V, I

D

=–5A

R

DS(ON)

0.14

V

GS

=4V, I

D

=5A

0.14

V

GS

=–10V, I

D

=–5A

Ciss

460

pF

V

DS

=10V, f=1.0MHz,

1200

pF

V

DS

=–10V, f=1.0MHz,

Coss

225

pF

V

GS

=0V

440

pF

V

GS

=0V

Crss

50

pF

120

pF

td

(on)

25

ns

I

D

=5A, V

DD

20V,

50

ns

I

D

=–5A, V

DD

20V,

t

r

110

ns

 

R

L

=4

, V

GS

=5V,

170

ns

R

L

=4

, V

GS

=–5V

td

(off)

90

ns

see Fig. 3 on page 16.

180

ns

  

see Fig. 4 on page 16.

tf

55

ns

100

ns

V

SD

1.15

V

I

SD

=10A, V

GS

=0V

–1.25

V

I

SD

=–10A, V

GS

=0V

I

SD

=5A, V

GS

=0V

I

SD

=–5A, V

GS

=0V

t

rr

75

ns

di/dt=100A/

µ

s

100

ns

di/dt=100A/

µ

s

Electrical characteristics

0

10

20

30

40

50

V

DS  

(V)

10

100

5000

Capacitance  (pF)

1000

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

0

–10

–20

–30

–40

–50

V

DS  

(V)

10

100

5000

Capacitance  (pF)

1000

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

N-ch

P-ch

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

88

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

SLA5064

External dimensions

A

 • • • 

SLA (12-pin)

N-channel+P-channel

3-phase motor drive

(T

a

=25

°

C)

Symbol

Unit

V

DSS

60

–60

V

V

GSS

±

20

±

20

V

I

D

10

–10

A

I

D(pulse)

15 (PW

1ms, duty

25%)

–15 (PW

1ms, duty

25%)

A

5 (Ta=25

°

C, with all circuits operating, without heatsink)

W

40 (Tc=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

j-a

25 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

3.125 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000 (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

Ratings

N channel

P channel

Absolute maximum ratings

Equivalent circuit diagram

5

3

2

4

7

8

6

10

12

11

9

1

0

2

10

 V

DS  

(V)

4

6

8

15

12

14

4

6

0

 I

D  

(A)

8

10

2

V

GS

=2.7V

3.0V

3.3V

3.5V

4.0V

10V

(T

a

=25

°

C)

0

1

2

3

4

V

GS  

(V)

5

0

I

D  

(A)

2

4

6

8

10

12

14

15

(V

DS

=10V)

25

°

C

–40

°

C

T

C

=125

°

C

0

1

7

10 11 12 13 14 15

 I

D  

(A)

2 3

4

5

6

8

9

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

 R

DS  (ON) 

(

)

T

a

=25

°

C

V

GS

=4V

---40

0

50

100

150

T

C  

(

°

C)

0.00

0.02

R

DS  (ON) 

(

)

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

I

D

=–5A

V

GS

=–10V

---40

0

50

100

150

T

C  

(

°

C)

0.00

0.02

R

DS  (ON) 

(

)

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

I

D

=5A

V

GS

=4V

0

–2

–10

 V

DS  

(V)

–4

–6

–8

0

 I

D  

(A)

–2

–4

–6

–8

–10

–12

–14

–15

V

GS

=–2.7V

–3.0V

–3.3V

–3.5V

–4.0V

10V

(T

a

=25

°

C)

0

–1

–2

–3

–4

V

GS  

(V)

–5

0

I

D  

(A)

–2

–4

–6

–8

–10

–12

–14

–15

(V

DS

=10V)

25

°

C

–40

°

C

T

C

=125

°

C

0

–1

–7

–10–11 –12–13–14–15

 I

D  

(A)

–2 –3 –4 –5 –6

–8 –9

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

 R

DS  (ON) 

(

)

T

a

=25

°

C

V

GS

=–10V

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

89

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5064

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

–60

V

I

D

=–100

µ

A, V

GS

=0V

I

GSS

±

10

µ

A

V

GS

=

±

20V

10

µ

A

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

–100

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

–1.0

–2.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

8

S

V

DS

=10V, I

D

=5A

8.7

S

V

DS

=–10V, I

D

=–5A

R

DS(ON)

0.14

V

GS

=4V, I

D

=5A

0.14

V

GS

=–10V, I

D

=–5A

Ciss

460

pF

V

DS

=10V, f=1.0MHz,

1200

pF

V

DS

=–10V, f=1.0MHz,

Coss

225

pF

V

GS

=0V

440

pF

V

GS

=0V

Crss

50

pF

120

pF

td

(on)

25

ns

I

D

=5A, V

DD

20V,

50

ns

I

D

=–5A, V

DD

20V,

t

r

110

ns

 

R

L

=4

, V

GS

=5V,

170

ns

R

L

=4

, V

GS

=–5V,

td

(off)

90

ns

see Fig. 3 on page 16.

180

ns

  

see Fig. 4 on page 16.

t

f

55

ns

100

ns

V

SD

1.15

V

I

SD

=10A, V

GS

=0V

–1.25

V

I

SD

=–10A, V

GS

=0V

I

SD

=5A, V

GS

=0V,

I

SD

=–5A, V

GS

=0V,

t

rr

75

ns

di/dt=100A/

µ

s

100

ns

di/dt=100A/

µ

s

Electrical characteristics

0

1.0

1.5

V

SD  

(V)

0.5

0

15

I

DR  

(A)

1

2

3

4

5

6

7

8

9

10

11

12

13

14

0

V

4V

V

GS

=1

0V

(T

a

=25

°

C)

0.05

1

I

D  

(A)

10

20

0.1

0.1

1

10

20

Re  (yfs) (S)

25

°

C

125

°

C

T

C

=–40

°

C

(V

DS

=10V)

0.1

1

10

100

V

DS  

(V)

0.1

1

10

20

 I

D

(A)

1m

s

10

m

s

R

D

S

 (O

N

)

      

LIMITED

100

µ

s

T

C

=25

°

C

SINGLE PULSE

0

–1.0

–1.5

V

SD  

(V)

–0.5

0

–15

I

DR  

(A)

–1

–2

–3

–4

–5

–6

–7

–8

–9

–10

–11

–12

–13

–14

(T

a

=25

°

C)

0V

–4V

V

GS

=–

10

V

–0.05

–1

I

D  

(A)

–10

–20

–0.1

0.1

1

10

20

Re  (yfs) (S)

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

–0.1

–1

–10

–100

V

DS  

(V)

–0.1

–1

–10

–20

 I

D  

(A)

1ms

10

m

s

R

DS  (ON)

      

LIMITED      

100

µ

s

T

C

=25

°

C

SINGLE PULSE

0

50

100

150

T

a  

(

°

C)

25

25

30

30

35

40

20

15

10

5

0

P

T  

(W)

Without Heatsink

W

ith Infinite H

eatsink

All Circuits Operating

0

10

20

30

40

50

V

DS  

(V)

10

100

5000

Capacitance  (pF)

1000

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

0

–10

–20

–30

–40

–50

V

DS  

(V)

10

100

5000

Capacitance  (pF)

1000

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

N-ch

P-ch

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

90

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

D

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5065

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

6

S

V

DS

=10V, I

D

=3.5A

R

DS(ON)

0.1

V

GS

=10V, I

D

=3.5A

Ciss

660

pF

V

DS

=10V,

Coss

310

pF

f=1.0MHz,

Crss

75

pF

V

GS

=0V

td

(

on

)

30

ns

I

D

=3.5A,

t

r

90

ns

V

DD

20V,

td

(off)

140

ns

R

L

=5.7

, V

GS

=5V,

t

f

65

ns

 see Fig. 3 on page 16.

V

SD

1.1

V

I

SD

=7A, V

GS

=0V

t

rr

80

ns

I

SD

=3.5A, di/dt=100A/

µ

A

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

20

V

I

D

7

A

I

D(

pulse

)

15 (

PW

100

µ

s, Du

1%

)

A

E

AS

*

60

mJ

I

AS

7

A

4.8 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

35 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

θ

j-a

26 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=20mH, I

D

=2A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

N-channel

5-phase motor drive

External dimensions

A

 • • • 

SLA (15-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

3

1

5

4

2

7

8

10

9

6

0

2

4

6

8

10

V

DS  

(V)

0

3

10

15

I

D  

(A)

V

GS

=2.5V

2.7V

3.0V

3.3V

3.5V

3.8V

4.0V

10V

(T

a

=25

°

C)

0

1

2

0

8

6

4

2

10

12

14

15

3

V

GS  

(V)

I

D  

(A)

4

5

25

°

C

–40

°

C

T

C

=125

°

C

(V

DS

=10V)

0

0

15

0.05

0.10

0.15

I

D  

(A)

R

DS  (ON) 

(

)

5

10

10V

V

GS

=4V

(T

a

=25

°

C)

0

0

0.5

1.0

1.5

15

I

DR  

(A)

V

SD  

(V)

5

10

4V

0V

V

GS

=10V

(T

a

=25

°

C)

–40

0

50

100

150

T

C  

(

°

C)

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

R

DS  (ON) 

(

)

(I

D

=3.5A)

V

GS

=4V

10V

0.05

0.1

0.1

1

1

I

D  

(A)

Re  (yfs) (S)

20

10

20

10

(V

DS

=10V)

T

C

= –40

°

C

25

°

C

125

°

C

0

10

20

30

40

50

10

100

5000

1000

V

DS  

(V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

C

iss

C

oss

C

rss

0.1

1

10

100

V

DS  

(V)

0.1

1

10

20

 I

D  

(A)

1ms

10

ms

R

DS (O

N)

      

LIM

IT

E

D

      

100

µ

s

T

C

=25

°

C

SINGLE PULSE

0

50

100

150

T

a  

(

°

C)

40

10

20

30

0

P

T  

(W)

All Circuits Operating

With Infinite Heatsink

Without Heatsink

Pins 11, 12, 13, 14, 15 : NC

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

91

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5068

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

6

S

V

DS

=10V, I

D

=3.5A

R

DS(ON)

0.1

V

GS

=10V, I

D

=3.5A

Ciss

660

pF

V

DS

=10V,

Coss

310

pF

f=1.0MHz,

Crss

75

pF

V

GS

=0V

td

(

on

)

30

ns

I

D

=3.5A,

t

r

90

ns

V

DD

20V,

td

(off)

140

ns

R

L

=5.7

, V

GS

=5V,

t

f

65

ns

 see Fig. 3 on page 16.

V

SD

1.1

V

I

SD

=7A, V

GS

=0V

t

rr

80

ns

I

SD

=3.5A, di/dt=100A/

µ

A

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

20

V

I

D

7

A

I

D(

pulse

)

15 (

PW

100

µ

s, Du

1%

)

A

E

AS

*

60

mJ

I

AS

7

A

5 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

50 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

2.5 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=20mH, I

D

=2A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

N-channel

5-phase motor drive

External dimensions

A

 • • • 

SLA (15-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

Pins 8, 9 : NC

3

5

4

2

7

10

1

11

6

15

12

13

14

0

2

4

6

8

10

V

DS  

(V)

0

3

10

15

I

D  

(A)

V

GS

=2.5V

2.7V

3.0V

3.3V

3.5V

3.8V

4.0V

10V

(T

a

=25

°

C)

0

1

2

0

8

6

4

2

10

12

14

15

3

V

GS  

(V)

I

D  

(A)

4

5

25

°

C

–40

°

C

T

C

=125

°

C

(V

DS

=10V)

0

0

15

0.05

0.10

0.15

I

D  

(A)

R

DS  (ON) 

(

)

5

10

10V

V

GS

=4V

(T

a

=25

°

C)

0

0

0.5

1.0

1.5

15

I

DR  

(A)

V

SD  

(V)

5

10

4V

0

V

V

GS

=10V

(T

a

=25

°

C)

–40

0

50

100

150

T

C  

(

°

C)

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

R

DS  (ON) 

(

)

(I

D

=3.5A)

V

GS

=4V

10V

0.05

0.1

0.1

1

1

I

D  

(A)

Re  (yfs) (S)

20

10

20

10

(V

DS

=10V)

T

C

= –40

°

C

25

°

C

125

°

C

0

10

20

30

40

50

10

100

5000

1000

V

DS  

(V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

C

iss

C

oss

C

rss

0.1

1

10

100

V

DS  

(V)

0.1

1

10

20

 I

D  

(A)

1ms

10

ms

R

DS (ON)

      

LIM

IT

E

D

      

100

µ

s

T

C

=25

°

C

SINGLE PULSE

0

50

100

150

T

a  

(

°

C)

60

10

20

30

40

50

0

P

T  

(W)

All Circuits Operating

Without Heatsink

With Infinite Heatsink

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

92

FET 1

FET 2

FET 1

FET 1

FET 2

FET 2

FET 1

FET 2

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

(T

a

=25

°

C)

Symbol

Unit

V

DSS

150

V

V

GSS

+20, –10

V

I

D

±

7

A

I

D(pulse)

±

15 (PW

100

µ

s, duty

1%)

A

E

AS

*

100

mJ

5 (T

a

=25

°

C, with all circuits operating, without heatsink)

W

60 (T

c

=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

 

j-a

25  (Junction-Air, T

a

=25

°

C, with all circuits operating)

°

C/W

θ

 

j-c

2.08 (Junction-Case, T

c

=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000  (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=25V, L=3.4mH, I

D

=7A, unclamped, R

G

=50

, see Fig. E on page 15.

SLA5070

External dimensions

A

 • • • 

SLA (15-pin)

Equivalent circuit diagram

Absolute maximum ratings

N-channel

General purpose

P

T

Ratings

FET 1

FET 2

2

3

1

5

6

7

8

9

10

11

12

15

13

14

FET-1

FET-1

FET-2

FET-2

FET-2

FET-2

Pin 4 : NC

I

D  

(A)

5

6

7

4

3

2

1

0

V

DS  

(V)

0

2

4

6

8

10

V

GS

=2.0V

2.2V

2.4V

2.6V

3.0V

1

0

V

V

GS  

(V)

I

D  

(A)

Tc=125

°

C

25

°

C

40

°

C

7

6

5

4

3

2

1

0

0

1

2

3

4

(V

DS

=10V)

I

D  

(A)

0

1

2

3

4

5

6

7

100

90

80

70

60

50

R

DS  (ON) 

(m

)

4V

V

GS

=10V

T

C  

(

°

C)

R

DS  (ON) 

(m

)

200

100

0

–40

0

50

100

150

(I

D

=3.5A)

4V

V

GS

=10V

V

DS  

(V)

I

D  

(A)

10V

4V

2.8V

2.6V

2.4V

7

6

5

4

3

2

1

0

0

2

4

6

8

10

V

GS

=2.2V

V

GS  

(V)

I

D  

(A)

Tc=125

°

C

25

°

C

5

4

7

6

3

2

1

0

0

1

2

3

4

(V

DS

=10V)

4

0

°

C

R

DS  (ON) 

(m

)

200

150

100

50

0

0

1

2

3

4

5

6

7

I

D  

(A)

V

GS

=10V

4V

T

C  

(

°

C)

R

DS  (ON) 

(m

)

4V

V

GS

=10V

500

400

200

100

300

0

–40

0

50

100

150

(I

D

=3.5A)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

93

FET 1

FET 2

FET 1

FET 1

FET 2

FET 2

FET 1

FET 2

Characteristic curves

Re

(yfs)

-I

D

 Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

Characteristics

(T

a

=25

°

C)

FET 1

FET 2

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

150

V

I

D

=100

µ

A, V

GS

=0V

150

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=20V, –10V

±

100

nA

V

GS

=20V, –10V

I

DSS

100

µ

A

V

DS

=150V, V

GS

=0V

100

µ

A

V

DS

=150V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(yfs)

7

12

S

V

DS

=10V, I

D

=3.5A

4

9

S

V

DS

=10V, I

D

=3.5A

80

105

m

V

GS

=10V, I

D

=3.5A

150

200

m

V

GS

=10V, I

D

=3.5A

85

115

m

V

GS

=4V, I

D

=3.5A

170

230

m

V

GS

=4V, I

D

=3.5A

Ciss

1900

pF

V

DS

=10V,

870

pF

V

DS

=10V,

Coss

630

pF

f=1.0MHz,

320

pF

f=1.0MHz,

Crss

420

pF

V

GS

=0V

210

pF

V

GS

=0V

td 

(on)

35

ns

I

D

=3.5A

25

ns

I

D

=3.5A,

t

r

70

ns

V

DD

70V,

55

ns

V

DD

70V,

td

(off)

140

ns

R

L

=20

80

ns

R

L

=20

,

t

f

90

ns

V

GS

=5V, see Fig.3 on page 16.

50

ns

V

GS

=5V, see Fig.3 on page 16.

V

SD

1.0

1.5

V

I

SD

=7A, V

GS

=0V

1.0

1.5

V

I

SD

=7A, V

GS

=0V

t

rr

620

ns

I

F

=

±

100mA

500

ns

I

F

=

±

100mA

SLA5070

Electrical characteristics

R

DS(ON)

I

D  

(A)

Re  (yfs) (S)

125

°

C

25

°

C

T

C

=–

40

°

C

100

10

0.1

1

0.05

0.1

1

5

0.5

7

(V

DS

=10V)

V

DS  

(V)

0

10

20

30

40

50

Capacitance  (pF)

10000

1000

100

50

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

V

SD  

(V)

I

DR  

(A)

10V

4V

V

GS

=0V

7

6

5

4

3

2

1

0

0

0.5

1.0

1.5

V

DS  

(V)

(T

C

=25

°

C)

I

D  

(A)

I

(pulse) MAX

R

DS (

on

)

 LIMITED

10ms (1shot)

1ms

100

µ

s

20

10

5

1

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

1-Circuit Operation

40

60

20

5

0

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

Without Heatsink

W

ith

 In

fin

ite

 H

ea

ts

in

k

With Silicon Grease
Natural Cooling
All Circuits Operating

I

D  

(A)

Re  (yfs) (S)

T

C

=–

40

°

C

20

10

5

1

0.5

0.3

0.05

0.1

0.5

1

5

7

125

°

C

25

°

C

(V

DS

=10V)

Capacitance  (pF)

Coss

Crss

5000

500

1000

40

50

100

0

10

20

30

40

50

V

DS  

(V)

Ciss

V

GS

=0V

f=1MHz

V

SD  

(V)

I

DR  

(A)

10V

4V

V

GS

=0V

5

4

7

6

3

2

1

0

0

0.5

1.0

1.5

V

DS  

(V)

I

D  

(A)

10

m

s (

1s

ho

t)

1m

s

10

0

µ

s

20

10

5

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

I

(pulse) MAX

R

DS (

on

LIMITED

(T

C

=25

°

C)

1-Circuit Operation

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

94

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

D

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5072

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

250

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=250V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=1mA

Re

(

yfs

)

2.5

5.0

S

V

DS

=10V, I

D

=3.5A

R

DS(ON)

400

500

m

V

GS

=10V, I

D

=3.5A

Ciss

450

pF

V

DS

=10V, f=1.0MHz,

Coss

280

pF

V

GS

=0V

td

(

on

)

20

ns

I

D

=3.5A,

t

r

30

ns

V

DD

=100V,

td

(off)

55

ns

R

L

=28.6

, V

GS

=10V,

t

f

75

ns

 see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=7A, V

GS

=0V

t

rr

75

ns

I

SD

=3.5A, V

GS

=0V, di/dt=100A/

µ

s

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

250

V

V

GSS

±

20

V

I

D

7

A

I

D(

pulse

)

15 (PW

1ms, Du

1%)

A

E

AS

*

55

mJ

I

AS

7

A

5 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

40 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.125 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=25V, L=2mH, I

D

=7A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

N-channel

3-phase DC motor 100V AC direct drive

External dimensions

A

 • • • 

SLA (15-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

Pins 8,9 : NC

3

5

4

2

7

10

1

11

6

15

12

13

14

0

2

4

6

8

10

V

DS  

(V)

0

1

2

3

4

5

6

7

I

D  

(A)

V

GS

=4V

4.5V

5V

6V

5.5V

10V

3

5

10

100

300

50

0.03

0.1

0.05

0.5

5

1

10

20

V

DS  

(V)

I

D  

(A)

(T

C

=25

°

C)

R

DS

 (O

N) 

LIM

IT

ED

I

(pulse) max 

10ms (1shot)

100

m

s

1ms

0

20

10

30

2

10

5

50

100

2000

1000

500

40

50

V

DS  

(V)

Capacitance  (pF)

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

0.05

1

0.5

0.1

0.3

1

0.5

5

10

I

D  

(A)

Re  (yfs) (S)

7

5

T

C

=–

40

°

C

25

°

C

125

°

C

(V

DS

=10V)

–40

0

0

0.4

0.2

0.6

0.8

1.0

T

C  

(

°

C)

R

DS  (ON) 

(

)

100

50

150

I

D

=3.5A

V

GS

=10V

0

2

1

3

4

0

0.2

0.1

0.3

0.4

0.5

5

I

D  

(A)

R

DS  (ON) 

(

)

6

7

(V

GS

=10V)

0

2

4

6

0

5

4

3

2

1

6

7

8

V

GS  

(V)

I

D  

(A)

(V

DS

=10V)

T

C

=–40

°

C

25

°

C

125

°

C

0

0.5

1.0

1.5

0

3

2

1

5

4

6

7

V

SD  

(V)

I

DR  

(A)

(V

GS

=0V)

25

30

35

40

20

15

10

5

0

Without Heatsink

With Infinite Heatsink

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

With Silicon Grease
Natural Cooling
All Circuits Operating

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

95

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5073

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

5.5

S

V

DS

=10V, I

D

=3A

R

DS(ON)

0.3

V

GS

=4V, I

D

=3A

Ciss

320

pF

V

DS

=10V,

Coss

160

pF

f=1.0MHz,

Crss

35

pF

V

GS

=0V

td

(

on

)

16

ns

I

D

=3A,

t

r

65

ns

V

DD

20V,

td

(off)

70

ns

R

L

=6.67

, V

GS

=5V,

t

f

45

ns

 see Fig. 3 on page 16.

V

SD

1.2

V

I

SD

=4A, V

GS

=0V

t

rr

65

ns

I

SD

=3A, V

GS

=0V, di/dt=100A/

µ

s

Specification

min

typ

max

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

20

V

I

D

5

A

I

D(

pulse

)

8 (

PW

1ms, Du

25%

)

A

5 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

30 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

4.17 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

N-channel

5-phase motor drive

External dimensions

A

 • • • 

SLA (15-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

3

5

4

2

7

10

8

11

6

1

13

12

15

14

11

0

2

4

6

8

0

3

2

1

4

5

8

7

6

10

V

DS  

(V)

I

D  

(A)

V

GS

=2.7V

3.0V

3.3V

3.5V

3.8V

10V

4V

(T

a

=25

°

C)

0

1

2

3

4

0

5

4

3

2

1

6

8

7

5

V

GS  

(V)

I

D  

(A)

T

C

=125

°

C

25

°

C

–40

°

C

(V

DS

=10V)

0

2

1

3

4

0

0.10

0.15

0.05

0.20

0.25

0.30

5

I

D  

(A)

R

DS  (ON) 

(

)

6

7

8

T

a

=25

°

C

V

GS

=4V

0

0.5

1.0

1.5

0

3

2

1

5

4

6

7

8

V

SD  

(V)

I

DR  

(A)

0V

V

G

S

=10V 4V

(T

a

=25

°

C)

0.05

1

0.1

0.1

1

10

20

I

D  

(A)

Re  (yfs) (S)

10

(V

DS

=10V)

T

a

=–40

°

C

25

°

C

125

°

C

0

10

20

30

40

50

10

100

1000

V

DS  

(V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

(T

a

=25

°

C)

25

30

35

40

20

15

10

5

0

Without Heatsink

With Infinite Heatsink

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

With Silicon Grease
Natural Cooling
All Circuits Operating

–40

0

0.00

0.10

0.15

0.05

0.20

0.30

0.25

0.35

T

C  

(

°

C)

R

DS  (ON) 

(

)

100

50

150

I

D

=3A

V

GS

=4V

0.1

1

10

100

0.1

1

10

I

D  

(A)

V

DS  

(V)

(T

C

=25

°

C, SINGLE PULSE)

1m

s

10

m

s

R

DS (ON)

      

LIMITED      

100

µ

s

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

96

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5074

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

20

V

I

D

5

A

I

D(

pulse

)

8 (

PW

1ms, Du

25%

)

A

4.8 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

25 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

θ

j-a

26 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

5 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

N-channel

5-phase motor drive

External dimensions

A

 • • • 

SLA (15-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

3

1

5

4

2

7

8

10

9

6

Pins 11, 12, 13, 14, 15 : NC

150

25

30

20

15

10

5

0

0

50

100

T

a  

(

°

C)

P

T  

(W)

Without Heatsink

With Infinite Heatsink

All Circuits Operating

0

2

4

6

8

0

3

2

1

4

5

8

7

6

10

V

DS  

(V)

I

D  

(A)

V

GS

=2.7V

3.0V

3.3V

3.5V

3.8V

10V

4V

(T

a

=25

°

C)

0

1

2

3

4

0

5

4

3

2

1

6

8

7

5

V

GS  

(V)

I

D  

(A)

T

C

=125

°

C

25

°

C

–40

°

C

(V

DS

=10V)

0

2

1

3

4

0

0.10

0.15

0.05

0.20

0.25

0.30

5

I

D  

(A)

R

DS  (ON) 

(

)

6

7

8

T

a

=25

°

C

V

GS

=4V

0

0.5

1.0

1.5

0

3

2

1

5

4

6

7

8

V

SD  

(V)

I

DR  

(A)

0V

V

GS

=10V 4V

(T

a

=25

°

C)

0.05

1

0.1

0.1

1

10

20

I

D  

(A)

Re  (yfs) (S)

10

(V

DS

=10V)

T

a

=–40

°

C

25

°

C

125

°

C

0

10

20

30

40

50

10

100

1000

V

DS  

(V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

(T

a

=25

°

C)

–40

0

0.00

0.10

0.15

0.05

0.20

0.30

0.25

0.35

T

C  

(

°

C)

R

DS  (ON) 

(

)

100

50

150

I

D

=3A

V

GS

=4V

0.1

1

10

100

0.1

1

10

I

D  

(A)

V

DS  

(V)

(T

C

=25

°

C, SINGLE PULSE)

1ms

10

ms

R

D

S

 (O

N

)

      

LIMITED      

100

µ

s

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

5.5

S

V

DS

=10V, I

D

=3A

R

DS(ON)

0.3

V

GS

=4V, I

D

=3A

Ciss

320

pF

V

DS

=10V,

Coss

160

pF

f=1.0MHz,

Crss

35

pF

V

GS

=0V

td

(

on

)

16

ns

I

D

=3A,

t

r

65

ns

V

DD

20V,

td

(off)

70

ns

R

L

=6.67

, V

GS

=5V,

t

f

45

ns

 see Fig. 3 on page 16.

V

SD

1.2

V

I

SD

=4A, V

GS

=0V

t

rr

65

ns

I

SD

=3A, V

GS

=0V, di/dt=100A/

µ

s

Specification

min

typ

max

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

97

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5075

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

500

V

V

GSS

±

30

V

I

D

±

5

A

I

D(

pulse

)

±

10 (

PW

1ms, Du

1%

)

A

E

AS

*

45

mJ

5 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

60 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

2.08 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

N-channel

3-phase DC motor 200V AC direct drive

External dimensions

A

 • • • 

SLA (15-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

Pins 8, 9 : NC

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

500

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

30V

I

DSS

100

µ

A

V

DS

=500V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=1mA

Re

(

yfs

)

2.4

4.0

S

V

DS

=10V, I

D

=2.5A

R

DS(ON)

1.05

1.4

V

GS

=10V, I

D

=2.5A

Ciss

770

pF

V

DS

=10V, f=1.0MHz,

Coss

290

pF

V

GS

=0V

td

(

on

)

20

ns

I

D

=2.5A,

t

r

25

ns

V

DD

200V,

td

(off)

70

ns

R

L

=80

, V

GS

=10V,

t

f

65

ns

 see Fig. 3 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

t

rr

75

ns

I

SD

=2.5A, di/dt=100A/

µ

s

Specification

min

typ

max

3

5

4

2

7

10

1

11

6

15

12

13

14

* : V

DD

=30V, L=3.4mH, I

D

=5A, unclamped, R

G

=50

, see Fig. E on page 15.

0

5

10

15

1

0

2

3

4

5

20

V

DS  

(V)

I

D  

(A)

V

GS

=3.5V

4V

4.5V

5

V

1

0

V

0

2

4

0

5

4

3

2

1

6

V

GS  

(V)

I

D  

(A)

(V

DS

=20V)

T

C

=125

°

C

25

°

C

–40

°

C

0

2

1

3

4

0

1.0

0.5

1.5

2.0

5

I

D  

(A)

R

DS  (ON) 

(

)

(V

GS

=10V)

0.05

1

0.1

0.5

0.2

0.5

1

5

10

I

D  

(A)

Re  (yfs) (S)

5

(V

DS

=20V)

125

°

C

25

°

C

T

a

=–

40

°

C

–40

0

0

3.0

2.5

2.0

1.5

1.0

0.5

T

C  

(

°

C)

R

DS  (ON) 

(

)

100

50

150

I

D

=2.5A

V

GS

=10V

0

10

20

30

40

50

10

500

100

50

2000

1000

V

DS  

(V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0.5

1.0

1.5

0

3

2

1

5

4

V

SD  

(V)

I

DR  

(A)

(T

a

=25

°

C)

3

5

10

100

50

600

0.05

0.1

1

0.5

20

10

5

I

D  

(A)

V

DS  

(V)

1ms

R

D

S (O

N

)

      

LIMITED      

10

0

µ

s

I

D

(pulse) max

(T

C

=25

°

C)

40

60

20

5

0

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

With Silicon Grease
Natural Cooling
All Circuits Operating

Without Heatsink

W

ith

 In

fin

ite

 H

ea

ts

in

k

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

98

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5077

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

150

V

V

GSS

+20, –10

V

I

D

±

10

A

I

D(

pulse

)

±

40 (

PW

100

µ

s, duty

1%

)

A

E

AS

*

100

mJ

I

AS

10

A

(Ta=25

°

C, with all circuits operating, without heatsink)

W

50 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

2.5 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

N-channel

General purpose

External dimensions

A

 • • • 

SLA (12-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

150

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=20V, –10V

I

DSS

100

µ

A

V

DS

=150V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

5

10

S

V

DS

=10V, I

D

=5A

R

DS(ON)

150

200

m

V

GS

=10V, I

D

=5A

170

230

m

V

GS

=4V, I

D

=5A

Ciss

870

pF

V

DS

=10V,

Coss

320

pF

f=1.0MHz,

Crss

210

pF

V

GS

=0V

td

(

on

)

25

ns

I

D

=5A,

t

r

50

ns

V

DD

70V,

td

(off)

75

ns

R

L

=14

, V

GS

=5V,

t

f

40

ns

 see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=10A, V

GS

=0V

t

rr

500

ns

I

F

=

±

100mA

Specification

min

typ

max

* : V

DD

=25V, L=1.7mH, I

D

=10A, unclamped, R

G

=50

, see Fig. E on page 15.

1

3

2

4

6

5

9

7

8

12

10

11

V

DS  

(V)

I

D  

(A)

10V

4V

2.8V

2.6V

2.4V

7

6

5

4

3

2

1

0

0

2

4

6

8

10

V

GS

=2.2V

V

GS  

(V)

I

D  

(A)

Tc=125

°

C

2

5

°

C

5

4

7

6

3

2

1

0

0

1

2

3

4

(V

DS

=10V)

4

0

°

C

R

DS  (ON) 

(m

)

200

150

100

50

0

0

1

2

3

4

5

6

7

I

D  

(A)

V

GS

=10V

4V

I

D  

(A)

Re  (yfs) (S)

T

C

=–

40

°

C

20

10

5

1

0.5

0.3

0.05

0.1

0.5

1

5

7

125

°

C

  25

°

C

(V

DS

=10V)

T

C  

(

°

C)

R

DS  (ON) 

(m

)

4V

V

GS

=1

0V

500

400

200

100

300

0

–40

0

50

100

150

(I

D

=3.5A)

Capacitance  (pF)

Coss

Crss

5000

500

1000

40

50

100

0

10

20

30

40

50

V

DS  

(V)

Ciss

V

GS

=0V

f=1MHz

V

SD  

(V)

I

DR  

(A)

10

V

4V

V

GS

=0V

5

4

7

6

3

2

1

0

0

0.5

1.0

1.5

V

DS  

(V)

I

D  

(A)

10

m

s (1

sh

ot)

1m

s

10

0

µ

s

20

10

5

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

I

(pulse) MAX

R

DS (

on

)

 LIMITED

(T

C

=25

°

C)

1-Circuit Operation

All Circuits Operating

30

40

50

60

20

10

0

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

Without Heatsink

With Infinite Heatsink

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

99

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SLA5079

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

–60

V

V

GSS

±

20

V

I

D

–10

A

I

D(

pulse

)

–15 (

PW

1ms, duty

25%

)

A

4.5 

(Ta=25

°

C, with all circuits operating, without heatsink)

W

30 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

θ

j-a

27.8 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

4.17 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

P-channel

3-phase motor drive

External dimensions

A

 • • • 

SLA (12-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

–60

V

I

D

=–100

µ

A, V

GS

=0V

I

GSS

±

10

nA

V

GS

=

±

20V

I

DSS

–100

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

–1.0

–2.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(

yfs

)

8.7

S

V

DS

=–10V, I

D

=–5A

R

DS(ON)

0.14

V

GS

=–10V, I

D

=–5A

Ciss

1200

pF

V

DS

=–10V,

Coss

440

pF

f=1.0MHz,

Crss

120

pF

V

GS

=0V

td

(

on

)

50

ns

I

D

=–5A, V

DD

–20V,

t

r

170

ns

R

L

=4

, V

GS

=–5V,

td

(off)

180

ns

R

G

=50

Ω,

t

f

100

ns

 see Fig. 4 on page 16.

V

SD

–1.25

V

I

SD

=–10A, V

GS

=0V

t

rr

100

ns

I

SD

=–5A, di/dt=100A/

µ

s

Specification

min

typ

max

2

1

3

6

5

7

11

12

10

0

–2

–4

–6

–8

0

–2

–4

–6

–8

–10

–12

–14

–15

–10

V

DS  

(V)

I

D  

(A)

(T

a

=25

°

C)

V

GS

=–2.7V

–3.0V

–3.3V

–3.5V

–4.0V

1

0

V

0

–1

–2

–3

–4

0

–4

–2

–6

–10

–8

–12

–14

–15

–5

V

GS  

(V)

I

D  

(A)

T

C

=

1

2

5

°

C

25

°

C

40

°

C

(V

DS

=–10V)

0

0.08

0.04

0.12

0.16

0.20

I

D  

(A)

R

DS  (ON) 

(

)

–15

–2

0

–4

–6

–8

–10

–12

–14

T

a

=25

°

C

V

GS

=–10V

0.0

–0.5

–1.0

–1.5

0

–2

–4

–6

–8

–10

–12

–14

–15

V

SD  

(V)

I

DR  

(A)

0V

V

GS

=–

10V

–4V

(T

a

=25

°

C)

–40

0

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

T

C  

(

°

C)

R

DS  (ON) 

(

)

100

50

150

I

D

=–5A

V

GS

=–10V

–1

–10

–0.1

–0.1

–1

–10

–20

I

D  

(A)

Re  (yfs) (S)

–20

T

c

=–

40

°

C

25

°

C

125

°

C

(V

DS

=–10V)

–0

–10

–20

–30

–40

–50

10

100

1000

3000

V

DS  

(V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

Ciss

Coss

Crss

–0.1

–1

–10

–100

–0.1

–1

–20

–10

I

D  

(A)

V

DS  

(V)

1ms

10

ms

100

µ

s

R

D

S (O

N

)

      

LIM

IT

E

D

      

(T

C

=25

°

C, SINGLE PULSE)

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

With Infinite Heatsink

Without Heatsink

All Circuits Operating

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

100

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5080

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

20

V

I

D

10

A

I

D(

pulse

)

15 (

PW

1ms, Du

25%

)

A

4.5 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

30 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

θ

j-a

27.8 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

4.17 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

N-channel

3-phase motor drive

External dimensions

A

 • • • 

SLA (12-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

10

µ

A

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

8.0

S

V

DS

=10V, I

D

=5A

R

DS(ON)

0.14

V

GS

=4V, I

D

=5A

Ciss

460

pF

V

DS

=10V,

Coss

225

pF

f=1.0MHz,

Crss

50

pF

V

GS

=0V

td

(

on

)

25

ns

I

D

=5A, V

DD

20V,

t

r

110

ns

R

L

=4

,

td

(off)

90

ns

V

GS

=5V,

t

f

55

ns

 see Fig. 4 on page 16.

V

SD

1.15

V

I

SD

=10A, V

GS

=0V

t

rr

75

ns

I

SD

=5A, di/dt=100A/

µ

s

Specification

min

typ

max

2

3

1

6

7

5

11

10

12

0

2

4

6

8

2

0

4

6

8

10

14

12

15

10

V

DS  

(V)

I

D  

(A)

V

GS

=2.7V

3.0V

3.3V

3.5V

4.0V

10V

(T

a

=25

°

C)

0

1

2

3

4

5

V

GS  

(V)

0

12

15

14

10

6

8

4

2

I

D  

(A)

T

C

=25

°

C

25

°

C

–40

°

C

(V

DS

=20V)

0

4

2

6

8

0

0.08

0.04

0.12

0.16

0.20

10

I

D  

(A)

R

DS  (ON) 

(

)

12

14 15

T

a

=25

°

C

V

GS

=4V

0

0

0.5

1.0

1.5

15

12

9

I

DR  

(A)

V

SD  

(V)

6

3

V

G

S

=1

0V

4V

0V

(T

a

=25

°

C)

–40

0

50

100

150

T

C  

(

°

C)

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

R

DS  (ON) 

(

)

I

D

=5A

V

GS

=4V

0.05

0.1

0.1

1

10

1

I

D  

(A)

Re  (yfs) (S)

20

10

20

(V

DS

=10V)

T

C

=–40

°

C

125

°

C

25

°

C

0

10

20

30

40

50

10

100

2000

1000

V

DS  

(V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

Ciss

Coss

Crss

0.1

1

10

100

0.1

1

20

10

I

D  

(A)

V

DS  

(V)

T

C

=25

°

C

Single Pulse

10

0

µ

s

1m

s

10ms

R

DS (ON) 

LIMITED

25

30

35

40

20

15

10

5

0

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

W

ith Infinite H

eatsink

Without Heatsink

All Circuits Operating

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

102

FET 1

FET 2

FET 1

FET 1

FET 2

FET 2

FET 1

FET 2

Characteristic curves

(T

a

=25

°

C)

Symbol

Unit

V

DSS

150

V

V

GSS

+20, –10

V

I

D

±

7

A

I

D (pulse)

*1

±

15

A

E

AS

*2

100

mJ

5 (T

a

=25

°

C, with all circuits operating, without heatsink)

W

47 (T

c

=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

 

j-a

25  (Junction-Air, T

a

=25

°

C, with all circuits operating)

°

C/W

θ

 

j-c

2.66 (Junction-Case, T

c

=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000  (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

*1 : PW

100

µ

s, duty

1%

*2 : V

DD

=25V, L=3.4mH, I

D

=7A, unclamped, R

G

=50

, see Fig. E on page 15.

SLA5081

External dimensions

A

 • • • 

SLA (15-pin)

Equivalent circuit diagram

Absolute maximum ratings

N-channel

General purpose

P

T

Ratings

FET 1

FET 2

2

3

FET1

FET2

FET2

FET2

FET2

1

7

8

9

10

11

12

13

14

15

Pins 4, 5, 6 : NC

I

D  

(A)

5

6

7

4

3

2

1

0

V

DS  

(V)

0

2

4

6

8

10

V

GS

=2.0V

2.2V

2.4V

2.6V

3.0V

1

0

V

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

V

GS  

(V)

0

1

2

3

4

I

D  

(A)

5

6

7

4

3

2

1

0

25

°

C

40

°

C

T

C

=

1

2

5

°

C

I

D  

(A)

0

1

2

3

4

5

6

7

100

90

80

70

60

50

R

DS  (ON) 

(m

)

4V

V

GS

=10V

T

C  

(

°

C)

R

DS  (ON) 

(m

)

200

100

0

–40

0

50

100

150

(I

D

=3.5A)

4V

V

GS

=10V

V

DS  

(V)

I

D  

(A)

10V

4V

2.8V

2.6V

2.4V

7

6

5

4

3

2

1

0

0

2

4

6

8

10

V

GS

=2.2V

V

GS  

(V)

I

D  

(A)

Tc=125

°

C

25

°

C

5

4

7

6

3

2

1

0

0

1

2

3

4

(V

DS

=10V)

40

°

C

R

DS  (ON) 

(m

)

200

150

100

50

0

0

1

2

3

4

5

6

7

I

D  

(A)

V

GS

=10V

4V

T

C  

(

°

C)

R

DS  (ON) 

(m

)

4V

V

GS

=1

0V

500

400

200

100

300

0

–40

0

50

100

150

(I

D

=3.5A)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

103

FET 1

FET 2

FET 1

FET 1

FET 2

FET 2

FET 1

FET 2

Characteristic curves

SLA5081

Electrical characteristics

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

I

D  

(A)

Re  (yfs) (S)

125

°

C

25

°

C

T

C

=–

40

°

C

100

10

0.1

1

0.05

0.1

1

7

(V

DS

=10V)

V

SD  

(V)

I

DR  

(A)

10V

4V

V

GS

=0V

7

6

5

4

3

2

1

0

0

0.5

1.0

1.5

V

DS  

(V)

(T

C

=25

°

C)

I

D  

(A)

I

(pulse) MAX

1-Circuit Operation

R

DS (

on

LIMITED

10

m

s (

1s

ho

t)

1m

s

10

0

µ

s

20

10

5

1

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

V

DS  

(V)

0

10

20

30

40

50

Capacitance  (pF)

10000

1000

100

50

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

I

D  

(A)

Re  (yfs) (S)

T

C

=–

40

°

C

20

10

5

1

0.5

0.3

0.05

0.1

0.5

1

5

7

125

°

C

  25

°

C

(V

DS

=10V)

Capacitance  (pF)

Coss

Crss

5000

500

1000

40

50

100

0

10

20

30

40

50

V

DS  

(V)

Ciss

V

GS

=0V

f=1MHz

V

SD  

(V)

I

DR  

(A)

10

V

4V

V

GS

=0V

5

4

7

6

3

2

1

0

0

0.5

1.0

1.5

V

DS  

(V)

I

D  

(A)

10ms (1shot)

1ms

100

µ

s

20

10

5

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

I

(pulse) MAX

R

DS (

on

)

 LIMITED

(T

C

=25

°

C)

1-Circuit Operation

30

50

40

20

10

0

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

All Circuits Operating

W

ith Infinite H

eatsink

Without Heatsink

R

DS(ON)

(T

a

=25

°

C)

FET 1

FET 2

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

150

V

I

D

=100

µ

A, V

GS

=0V

150

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=20V, –10V

±

100

nA

V

GS

=20V, –10V

I

DSS

100

µ

A

V

DS

=150V, V

GS

=0V

100

µ

A

V

DS

=150V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(yfs)

7

12

S

V

DS

=10V, I

D

=3.5A

4

9

S

V

DS

=10V, I

D

=3.5A

80

105

m

V

GS

=10V, I

D

=3.5A

150

200

m

V

GS

=10V, I

D

=3.5A

85

115

m

V

GS

=4V, I

D

=3.5A

170

230

m

V

GS

=4V, I

D

=3.5A

Ciss

1600

pF

V

DS

=10V,

870

pF

V

DS

=10V

Coss

380

pF

f=1.0MHz,

320

pF

f=1.0MHz

Crss

90

pF

V

GS

=0V

210

pF

V

GS

=0V

td 

(on)

35

ns

I

D

=3.5A,

25

ns

I

D

=3.5A

t

r

70

ns

V

DD

70V,

55

ns

V

DD

70V

td 

(off)

125

ns

R

L

=20

,

80

ns

R

L

=20

t

f

90

ns

V

GS

=5V, see Fig.3 on page 16.

50

ns

V

GS

=5V, see Fig.3 on page 16.

V

SD

1.0

1.5

V

I

SD

=7A, V

GS

=0V

1.0

1.5

V

I

SD

=7A, V

GS

=0V

t

rr

320

ns

I

F

=

±

100mA

500

ns

I

F

=

±

100mA

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

104

Characteristic curves

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

SLA5085

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

20

V

I

D

10

A

I

D(

pulse

)

10 (

PW

1ms, duty

25%

)

A

E

AS

*

30

mJ

5 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

30 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

4.17 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

N-channel

General purpose

External dimensions

A

 • • • 

SLA (12-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

3.7

5.5

S

V

DS

=10V, I

D

=3A

R

DS(ON)

0.16

0.22

V

GS

=4V, I

D

=3A

Ciss

320

pF

V

DS

=10V,

Coss

160

pF

f=1.0MHz,

Crss

35

pF

V

GS

=0V

td

(

on

)

16

ns

I

D

=3A, V

DD

20V,

t

r

65

ns

R

L

=6.67

,

td

(off)

70

ns

V

GS

=5V,

t

f

45

ns

 see Fig. 3 on page 16.

V

SD

1.05

1.5

V

I

SD

=5A, V

GS

=0V

t

rr

65

ns

I

SD

=3A, V

GS

=0V, di/dt=100A/

µ

s

Specification

min

typ

max

* : V

DD

=40V, L=20mH, I

D

=1A, unclamped, R

G

=50

, see Fig. E on page 15.

2

3

1

4

5

6

7

8

9

10

11

12

0

2

4

6

8

2

0

4

6

8

10

10

V

DS  

(V)

I

D  

(A)

V

GS

=2.5V

2.7V

3.0V

3.3V

3.5V

3.7V

4V

10V

(T

a

=25

°

C)

0

1

2

3

4

5

V

GS  

(V)

0

6

8

10

4

2

I

D  

(A)

T

a

=125

°

C

25

°

C

(V

DS

=10V)

–40

°

C

0

6

8

2

4

10

0

0.10

0.05

0.15

0.20

0.30

0.25

I

D  

(A)

R

DS  (ON) 

(

)

(T

a

=25

°

C)

V

GS

=10V

4V

0

0

0.5

1.0

1.5

10

8

6

I

DR  

(A)

V

SD  

(V)

4

2

V

GS

=10V

4V

0V

(T

a

=25

°

C)

–40

0

50

100

150

T

C  

(

°

C)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

R

DS  (ON) 

(

)

(I

D

=3A)

V

GS

=10V

10V

0.05

0.1

0.1

1

1

I

D  

(A)

Re  (yfs) (S)

50

10

10

T

a

= –

40

°

C

25

°

C

125

°

C

(V

DS

=10V)

0

10

20

30

40

50

10

100

1000

V

DS  

(V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

Ciss

Coss

Crss

25

40

35

30

15

20

10

5

0

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

 With Infinite Heatsink

Without Heatsink

All Circuits Operating

0.1

1

10

100

0.1

1

20

10

I

D  

(A)

V

DS  

(V)

T

C

=25

°

C

1-Circuit Operation

1ms

10m

s (1shot)

R

DS (ON) 

LIMITED

100

µ

s

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

105

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

–60

V

V

GSS

±

20

V

I

D

–5

A

I

D(

pulse

)

–10 (

PW

1ms, duty

25%

)

A

5 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

30 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

θ

j-a

25 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

4.17 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

V

ISO

1000 (

Between fin and lead pin, AC

)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

–60

V

I

D

=–100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

–100

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

–1.0

–2.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(

yfs

)

4

6

S

V

DS

=–10V, I

D

=–3A

R

DS(ON)

0.14

0.22

V

GS

=–10V, I

D

=–3A

Ciss

790

pF

V

DS

=–10V,

Coss

310

pF

f=1.0MHz,

Crss

90

pF

V

GS

=0V

td

(

on

)

40

ns

I

D

=–3A, V

DD

–20V,

t

r

110

ns

R

L

=6.67

,

td

(off)

160

ns

V

GS

=–5V,

t

f

80

ns

 see Fig. 4 on page 16.

V

SD

–1.0

–1.5

V

I

SD

=–5A, V

GS

=0V

t

rr

85

ns

I

SD

=3A, V

GS

=0V, di/dt=100A/

µ

s

Specification

min

typ

max

SLA5086

P-channel

General purpose

External dimensions

A

 • • • 

SLA (12-pin)

2

1

3

4

5

10

12

11

6

7

8

9

0

–2

–4

–6

–8

–2

0

–4

–6

–8

–10

–10

V

DS  

(V)

I

D  

(A)

(T

a

=25

°

C)

V

GS

=–2.5V

–2.7V

–3.0V

–3.3V

–3.5V

–3.7V

10V

4V

0

–1

–2

–3

–4

–5

V

GS  

(V)

0

–6

–8

–10

–4

–2

I

D  

(A)

T

a

=125

°

C

25

°

C

–40

°

C

(V

DS

=–10V)

0

–6

–8

–2

–4

–10

0

0.10

0.05

0.15

0.20

0.30

0.25

I

D  

(A)

R

DS  (ON) 

(

)

(T

a

=25

°

C)

V

GS

=–10V

–4V

0

0

–0.5

–1.0

–1.5

–10

–8

–6

I

DR  

(A)

V

SD  

(V)

–4

–2

(T

a

=25

°

C)

–4V

0V

V

G

S

= –

10V

–40

0

50

100

150

T

C  

(

°

C)

0

0.05

0.10

0.15

0.20

0.25

0.30

0.35

R

DS  (ON) 

(

)

V

GS 

= –

4V

–10V

(I

D

=–3A)

–0.05

0.1

–0.1

–1

1

I

D  

(A)

Re  (yfs) (S)

50

10

–10

(V

DS

=–10V)

T

= –

40

°

C

125

°

C

25

°

C

0

–10

–20

–30

–40

–50

10

100

1000

5000

V

DS  

(V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

Ciss

Coss

Crss

–0.1

–1

–10

–100

–0.1

–1

–20

–10

I

D  

(A)

V

DS  

(V)

1m

s

10

m

s

R

D

S (O

N

LIM

IT

E

D

100

µ

s

T

C

=25

°

C

1-Circuit Operation

25

40

35

30

15

20

10

5

0

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

With Infinite Heatsink

Without Heatsink

All Circuits Operating

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

106

FET 1

FET 2

FET 1

FET 1

FET 2

FET 2

FET 1

FET 2

Characteristic curves

(T

a

=25

°

C)

Symbol

Unit

V

DSS

150

V

V

GSS

+20, –10

V

I

D

±

5

±

7

A

I

D (pulse)

*1

±

10

±

15

A

5 (T

a

=25

°

C, with all circuits operating, without heatsink)

W

43 (T

c

=25

°

C, with all circuits operating, with infinite heatsink)

W

θ

 

j-a

25  (Junction-Air, T

a

=25

°

C, with all circuits operating)

°

C/W

θ

 

j-c

2.91 (Junction-Case, T

c

=25

°

C, with all circuits operating)

°

C/W

V

ISO

1000  (Between fin and lead pin, AC)

Vrms

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : PW

100

µ

s, duty

50%

SLA5088

External dimensions

A

 • • • 

SLA (15-pin)

Equivalent circuit diagram

Absolute maximum ratings

N-channel

General purpose

P

T

Ratings

FET 1

FET 2

Pins 4, 5, 6 : NC

2

3

FET1

FET2

FET2

FET2

FET2

1

7

8

9

10

11

12

13

14

15

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

V

DS  

(V)

I

D  

(A)

10V

4V

2.8V

2.6V

2.4V

7

6

5

4

3

2

1

0

0

2

4

6

8

10

V

GS

=2.2V

V

GS  

(V)

I

D  

(A)

T

c=

1

2

5

°

C

25

°

C

5

4

7

6

3

2

1

0

0

1

2

3

4

(V

DS

=10V)

4

0

°

C

R

DS  (ON) 

(m

)

200

150

100

50

0

0

1

2

3

4

5

6

7

I

D  

(A)

V

GS

=10V

4V

T

C  

(

°

C)

R

DS  (ON) 

(m

)

4V

V

GS

=10V

500

400

200

100

300

0

–40

0

50

100

150

(I

D

=3.5A)

V

DS  

(V)

I

D  

(A)

10V

4V

2.8V

2.6V

2.4V

5

4

3

2

1

0

0

2

4

6

8

10

V

GS

=2.2V

V

GS  

(V)

I

D  

(A)

T

c=

1

2

5

°

C

25

°

C

5

4

3

2

1

0

0

1

2

3

4

(V

DS

=10V)

40

°

C

I

D  

(A)

R

DS  (ON) 

(m

)

4V

400

500

300

200

100

0

0

1

2

3

4

5

V

GS

=10V

T

C  

(

°

C)

R

DS  (ON) 

(

)

4V

V

GS

=1

0V

1.0

0.5

0

–40

0

50

100

150

(I

D

=2.5A)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

107

FET 1

FET 2

FET 1

FET 1

FET 2

FET 2

FET 1

FET 2

Characteristic curves

SLA5088

Electrical characteristics

R

DS(ON)

(T

a

=25

°

C)

FET 1

FET 2

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

150

V

I

D

=100

µ

A, V

GS

=0V

150

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

100

nA

V

GS

=20V

100

nA

V

GS

=20V

I

DSS

100

µ

A

V

DS

=150V, V

GS

=0V

100

µ

A

V

DS

=150V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(yfs)

3

5.5

S

V

DS

=10V, I

D

=2.5A

4

9

S

V

DS

=10V, I

D

=3.5A

330

440

m

V

GS

=10V, I

D

=2.5A

150

200

m

V

GS

=10V, I

D

=3.5A

370

480

m

V

GS

=4V, I

D

=2.5A

170

230

m

V

GS

=4V, I

D

=3.5A

Ciss

380

pF

V

DS

=10V,

870

pF

V

DS

=10V,

Coss

95

pF

f=1.0MHz,

320

pF

f=1.0MHz,

Crss

25

pF

V

GS

=0V

210

pF

V

GS

=0V

td 

(on)

25

ns

I

D

=2.5A,

25

ns

I

D

=3.5A,

t

r

50

ns

V

DD

70V,

55

ns

V

DD

70V,

td 

(off)

55

ns

R

L

=28

,

80

ns

R

L

=20

,

t

f

40

ns

V

GS

=5V, see Fig.3 on page 16.

50

ns

V

GS

=5V, see Fig.3 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

1.0

1.5

V

I

SD

=7A, V

GS

=0V

t

rr

180

ns

I

F

=

±

100mA

500

ns

I

F

=

±

100mA

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

I

D  

(A)

Re  (yfs) (S)

T

C

=–

40

°

C

20

10

5

1

0.5

0.3

0.05

0.1

0.5

1

5

7

125

°

C

  25

°

C

(V

DS

=10V)

Capacitance  (pF)

Coss

Crss

5000

500

1000

40

50

100

0

10

20

30

40

50

V

DS  

(V)

Ciss

V

GS

=0V

f=1MHz

V

SD  

(V)

I

DR  

(A)

10V

4V

V

GS

=0V

5

4

7

6

3

2

1

0

0

0.5

1.0

1.5

V

DS  

(V)

I

D  

(A)

10

m

s (1

sh

ot)

1m

s

10

0

µ

s

20

10

5

1

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

I

(pulse) MAX

R

D

(on) LIM

ITE

D

(T

C

=25

°

C)

1-Circuit Operation

10

20

30

40

50

0

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

With Infinite Heatsink

Without Heatsink

All Circuits Operating

I

D  

(A)

Re  (yfs) (S)

T

C

=–

40

°

C

  25

°

C

125

°

C

10

5

1

0.5

0.3

0.05

0.1

0.5

1

5

(V

DS

=10V)

Capacitance  (pF)

Coss

Crss

1000

100

500

10

50

0

10

20

30

40

50

V

DS  

(V)

Ciss

V

GS

=0V

f=1MHz

V

SD  

(V)

I

DR  

(A)

10V

4V

V

GS

=0V

5

4

3

2

1

0

0

0.5

1.0

1.5

V

DS  

(V)

I

D  

(A)

10m

s (1shot)

1m

s

100

µ

s

20

10

5

0.5

0.1

0.05

0.01

0.5

1

5

10

50

200

100

I

(pulse) MAX

R

DS 

(on) LIMITED

(T

C

=25

°

C)

1-Circuit Operation

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

108

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

SLA6012

2

R

2

R

3

4

R

1

8

6

9

11

10

1

3

7

5

12

R

1

: 3k

Ω 

typ  R

2

: 2k

Ω 

typ  R

3

: 150

Ω 

typ

(T

a

=25

°

C)

Symbol

Unit

V

CBO

60

–60

V

V

CEO

60

–60

V

V

EBO

6

–6

V

I

C

4

–4

A

I

B

0.5

–0.5

A

P

T

5 (T

a

=25

°

C)

W

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

 –40 to +150

°

C

θ

j–c

 5

°

C/W

Ratings

NPN

PNP

6

4

2

0

0

2

4

6

IB=4.0mA

1.0mA

0.6mA

0.4mA

0.3mA

2.0mA

I

C

  (A)

V

CE

  (V)

20000

10000

5000

1000

500

100

50

30

0.03

0.1

0.5

1

5 6

typ

0.05

(V

CE

=4V)

h

FE

I

C

  (A)

0.03

0.1

0.5

1

5 6

0.05

20000

10000

5000

1000

500

100

50

30

75

°

C

25

°

C

Ta=125

°

C

–30

°

C

(V

CE

=4V)

h

FE

I

C

  (A)

6

4

2

0

0

1

2

3

T

a

=125

°

C

7

5

°

C

25

°

C

30

°

C

5

3

1

(V

CE

=4V)

I

C

  (A)

V

BE

  (V)

–6

–4

–2

0

0

–2

–4

–6

I

B

=

2.2m

A

–1.8mA

–1.5m

A

–1.2m

A

–1.0m

A

–0.9m

A

–0.8mA

I

C

  (A)

V

CE

  (V)

20000

10000

5000

1000

500

100

50

30
–0.03

–0.1

–0.5

–1

–5 –6

typ

–0.05

(V

CE

=–4V)

h

FE

I

C

  (A)

–0.03

–0.1

–0.5

–1

–5 –6

–0.05

20000

10000

5000

1000

500

100

50

30

T

a

=125

°

C

–3

0

°

C

75

°

C

25

°

C

(V

CE

=–4V)

h

FE

I

C

  (A)

–6

–4

–2

–3

0

0

–1

–2

–3

75

°

C

25

°

C

30

°

C

–5

–1

T

a

=125

°

C

(V

CE

=–4V)

I

C

  (A)

V

BE

  (V)

PNP + NPN Darlington

3-phase motor drive

External dimensions

A

 • • • 

SLA (12-pin)

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

109

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

θ

j-a

-PW Characteristics

V

CE

(sat)-I

Temperature Characteristics (Typical)

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Characteristic curves

SLA6012

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=60V

–10

µ

A

V

CB

=–60V

I

EBO

10

µ

A

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

60

V

I

C

=10mA

–60

V

I

C

=–10mA

h

FE

2000

V

CE

=4V, I

C

=3A

2000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

1.5

V

I

C

=3A, I

B

=6mA

–1.5

V

I

C

=–3A, I

B

=–6mA

3

0.1

0.5

2

1

0

1

5

10

50

100

I

C

=4A

I

C

=2A

I

C

=1A

V

CE

  (sat) (V)

I

B

  (mA)

3

0.5

2

1

0

1

5

6

T

a

=

12

5

°

C

75

°

C

25

°

C

–30

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

10

5

5

1

0.5

0.1

0.05

0.03

100

50

10

3

Single Pulse
Without Heatsink
T

a

=25

°

C

10

m

s

1ms

I

C

  (A)

V

CE

  (V) 

25

20

15

10

5

0

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

–40

0

50

100

150

Ta  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2

–3

–0.3 –0.5

–2

–1

0

–1

–5

–10

–50 –100

I

C

=–2A

I

C

=–1A

I

C

=–4A

V

CE

  (sat) (V)

I

B

  (mA)

–3

–0.5

–2

–1

0

–1

–5 –6

125

°

C

T

a

=–30

°

C

25

°

C

75

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

–10

–5

–5

–1

–0.5

–0.1

–0.05

–0.03

–100

–50

–10

–3

Single Pulse
Without Heatsink
T

a

=25

°

C

10m

s

1ms

I

C

  (A)

V

CE

  (V)

20

10

5

1

0.5

5

1

10

100

1000

500

50

PW  (mS)

θ

j–

a  (

°

C / W)

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

110

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

SLA6020

R

1

: 2.5k

Ω 

typ  R

2

: 200

Ω 

typ  R

3

: 3k

Ω 

typ  R

4

: 100

Ω 

typ

R

3

R

4

2

8

9

1

3

4

R

1

7

6

10

11

5

12

R

2

(T

a

=25

°

C)

Symbol

Unit

V

CBO

100

–100

V

V

CEO

100

–100

V

V

EBO

6

–6

V

I

C

5

–5

A

I

CP

8 (PW

1ms, D

u

50%)

–8 (PW

1ms, D

u

50%)

A

I

B

0.5

–0.5

A

5 (T

a

=25

°

C)

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j–c

 5

°

C/W

P

T

W

Ratings

NPN

PNP

20000

10000

5000

1000

500

100

50

30

0.03

0.1

0.5

1

5

8

typ

0.05

I

C

  (A)

h

FE

(V

CE

=4V)

20000

10000

5000

1000

500

100

50

30

0.02

0.1

0.5

1

5

8

0.05

75

°

C

25

°

C

T

a

=125

°

C

–30

°

C

(V

CE

=4V)

h

FE

I

C

  (A)

4

2

0

0

1

2

3

5

3

1

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

(V

CE

=2V)

I

C

  (A)

V

BE

  (V)

–8

–7

–6

–5

–4

–3

–2

–1

0

0

–1

–2

–3

–4

–5

–2mA

–1.2mA

–0.8mA

–0.6mA

–0.4mA

I

B

=–4mA

I

C

  (A)

V

CE

  (V)

(V

CE

=–4V)

20000

10000

5000

1000

500

100

50

30

–0.03

–0.1

–0.5

–1

–5

h

FE

I

C

  (A)

–8

typ

–0.05

20000

10000

5000

1000

500

100

50

30

–0.03

–0.1

–0.5

–1

–5

–8

T

a

=125

°

C

–3

0

°

C

–0.05

75

°

C

25

°

C

(V

CE

=–4V)

h

FE

I

C

  (A)

–8

–6

–4

–2

0

0

–1

–2

–3

T

a

=125

°

C

3

0

°

C

75

°

C

25

°

C

(V

CE

=–4V)

I

C  

(A)

V

BE

  (V)

5

4

3

2

1

0

0

1

2

3

4

5

I

B

=2mA

1mA

0.8mA

0.7mA

0.6mA

0.5m

A

0.4mA

I

C

  (A)

V

CE

  (V)

PNP + NPN Darlington

3-phase motor drive

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

111

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

θ

j-a

-PW Characteristics

V

CE

(sat)-I

Temperature Characteristics (Typical)

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Characteristic curves

SLA6020

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=100V

–10

µ

A

V

CB

=–100V

I

EBO

10

mA

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

100

V

I

C

=10mA

–100

V

I

C

=–10mA

h

FE

2000

V

CE

=4V, I

C

=3A

2000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

1.5

V

I

C

=3A, I

B

=6mA

–1.5

V

I

C

=–3A, I

B

=–6mA

3

0.2

0.5

2

1

0

1

5

10

50

I

C

=1A

I

C

=3A

I

C

=5A

V

CE

  (sat) (V)

I

B

  (mA)

0.5

2

1

0

1

5

125

°

C

75

°

C

25

°

C

T

a

=–30

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

10

5

5

1

0.5

0.1

0.05

0.03

100

50

10

3

10ms

1

m

s

100

µ

s

I

C

  (A)

V

CE

  (V)

Single Pulse
Without Heatsink
T

a

=25

°

C

20

10

5

1

0.5

1

5

10

50

100

500 1000

PW  (mS)

θ

j–

a  

(

°

C / W)

25

20

15

10

5

0

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

–40

0

50

100

150

Ta  (

°

C)

P

T

  (W)

W

ith Infinite Heatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2

–3

–0.2

–0.5

V

CE

  (sat) (V)

I

B

  (mA)

–2

–1

0

–1

–5 –10

–50 –100

–500

I

C

=–1A

I

C

=–3A

I

C

=–5A

–3

–0.3

–0.5

–2

–1

0

–1

–5

–8

125

°

C

75

°

C

25

°

C

T

a

=–30

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

–10

–5

–5

–1

–0.5

–0.1

–0.05

–0.03

–100

–50

–10

–3

Single Pulse
Without Heatsink
T

a

=25

°

C

10ms

1ms

100

µ

s

I

C

  (A)

V

CE

  (V)

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

112

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

SLA6022

2

R

2

R

3

4

R

1

8

6

9

11

10

1

3

7

5

12

R

1

: 2.5k

Ω 

typ  R

2

: 2.5k

Ω 

typ  R

3

: 200

Ω 

typ

(T

a

=25

°

C)

Symbol

Unit

V

CBO

100

–100

V

V

CEO

80

–100

V

V

EBO

6

–6

V

I

C

5

–5

A

I

B

0.5

–0.5

A

P

T

5 (T

a

=25

°

C)

W

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

 –40 to +150

°

C

θ

j–c

 5

°

C/W

Ratings

NPN

PNP

8

7

6

5

4

3

2

1

0

0

1

2

3

4

5

I

B

=

2

0

m

A

1mA

0.6mA

0.4mA

2m

A

6m

A

I

C

  (A)

V

CE

  (V)

20000

10000

5000

1000

500

100

50

0.03

0.1

0.5

1

5

8

typ

0.05

(V

CE

=4V)

h

FE

I

C

  (A)

20000

10000

5000

1000

500

100

50

0.03

0.1

0.5

1

5

8

75

°

C

25

°

C

T

a

=1

25

°

C

-30

°

C

(V

CE

=4V)

h

FE

I

C

  (A)

I

C

  (A)

V

BE

  (V)

(V

CE

=4V)

8

6

4

2

0

0

1

2

3

T

a

=125

°

C

75

°

C

25

°

C

3

0

°

C

–8

–7

–6

–5

–4

–3

–2

–1

0

0

–1

–2

–3

–4

–5

I

B

=–

4mA

–2m

A

–1.2mA

–0.8mA

–0.6mA

–0.4mA

I

C

  (A)

V

CE

  (V)

20000

10000

5000

1000

500

100

50

–0.03

–0.1

–0.5

–1

–5 –8

typ

–0.05

(V

CE

=–4V)

h

FE

I

C

  (A)

20000

10000

5000

1000

500

100

50

–0.03

–0.1

–0.5

–1

–5

–8

75

°

C

–30

°

C

25

°

C

T

a

=1

25

°

C

(V

CE

=–4V)

h

FE

I

C

  (A)

–8

–6

–4

–2

0

0

–1

–2

–3

7

5

°

C

25

°

C

30

°

C

T

a

=12

5

°

C

(V

CE

=–4V)

I

C

  (A)

V

BE  

(V)

PNP + NPN Darlington

3-phase motor drive

External dimensions

A

 • • • 

SLA (12-pin)

Equivalent circuit diagram

Absolute maximum ratings

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

113

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

θ

j-a

-PW Characteristics

V

CE

(sat)-I

Temperature Characteristics (Typical)

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Characteristic curves

SLA6022

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=100V

–10

µ

A

V

CB

=–100V

I

EBO

10

µ

A

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

80

V

I

C

=10mA

–100

V

I

C

=–10mA

h

FE

2000

V

CE

=4V, I

C

=3A

2000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

1.5

V

I

C

=3A, I

B

=6mA

–1.5

V

I

C

=–3A, I

B

=–6mA

V

FEC

V

1.3

V

I

FEC

=1A

t

rr

µ

s

2.0

µ

s

I

FEC

=

±

100mA

3

0.2

0.5

2

1

0

1

5

10

50

100

I

C

=5A

I

C

=3A

I

C

=1A

V

CE

  (sat) (V)

I

B

  (mA)

3

0.3

0.5

2

1

0

1

5

8

75

°

C

25

°

C

T

a

=125

°

C

30

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

10

5

5

1

0.5

0.1

0.05

0.03

100

50

10

3

10ms

1

m

s

Single Pulse
Without Heatsink
T

a

=25

°

C

I

C

  (A)

V

CE

  (V)

20

10

5

1

0.5

1

5

10

50 100

500 1000

PW  (mS)

θ

j–

a

  (

°

C / W)

25

20

15

10

5

0

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

–40

0

50

100

150

Ta  (

°

C)

P

T

  (W)

W

ith Infinite Heatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2

–3

–0.2

–0.5

–2

–1

0

–1

–5

–10

–50

–100

I

C

=–1A

I

C

=–3A

I

C

=–5A

V

CE

  (sat) (V)

I

B

  (mA)

–3

–0.3

–0.5

–2

–1

0

–1

–5

–8

125

°

C

75

°

C

25

°

C

T

a

=–30

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

–10

–5

–5

–1

–0.5

–0.1

–0.05

–0.03

–100

–50

–10

–3

10ms

1

m

s

I

C

  (A)

V

CE

  (V)

Single Pulse
Without Heatsink
T

a

=25

°

C

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

114

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

SLA6023

2

R

2

R

3

4

R

1

8

6

9

11

10

1

3

7

5

12

R

1

: 2k

Ω 

typ  R

2

: 3k

Ω 

typ  R

3

: 80

Ω 

typ

(T

a

=25

°

C)

Symbol

Unit

V

CBO

60

–60

V

V

CEO

60

–60

V

V

EBO

6

–6

V

I

C

6

–6

A

I

CP

12 (PW

1ms, D

u

50%)

–12 (PW

1ms, D

u

50%)

A

I

B

0.5

–0.5

A

P

T

5 (T

a

=25

°

C)

W

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j-c

 5

°

C/W

Ratings

NPN

PNP

6

4

2

0

0

2

4

6

1mA

8

10

12

0.5mA

2mA

5mA

30

m

A

10mA

I

B

=

1

0

0

m

A

I

C

  (A)

V

CE

  (V)

20000

10000

5000

1000

500

0.1

0.5

1

5

10

200

12

typ

(V

CE

=4V)

h

FE

I

C

  (A)

20000

10000

5000

1000

500

0.1

0.5

1

5

10

200

12

75

°

C

25

°

C

–3

0

°

C

T

a

=1

25

°

C

(V

CE

=4V)

h

FE

I

C

  (A)

2

0

0

1

2

3

75

°

C

25

°

C

30

°

C

4

6

8

10

12

T

a

=125

°

C

(V

CE

=4V)

I

C

  (A)

V

BE

  (V)

–6

–4

–2

0

0

–2

–4

–6

–1mA

–8

–10

–12

–0.5mA

–2mA

–3mA

I

B

=–10mA

–5mA

I

C

  (A)

V

CE

  (V)

20000

10000

5000

1000

500

–0.1

–0.5

–1

–5

–10

200

–12

typ

(V

CE

=–4V)

h

FE

I

C

  (A)

20000

10000

5000

1000

500

–0.1

–0.5

–1

–5

–10

200

–12

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

(V

CE

=–4V)

h

FE

I

C

  (A)

–2

0

0

–1

–2

–3

75

°

C

2

5

°

C

–4

–6

–8

–10

–12

30

°

C

T

a

=125

°

C

(V

CE

=–4V)

I

C

  (A)

V

BE

  (V)

PNP + NPN Darlington

3-phase motor drive

External dimensions

A

 • • • 

SLA (12-pin)

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

115

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

θ

j-a

-PW Characteristics

V

CE

(sat)-I

Temperature Characteristics (Typical)

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Characteristic curves

SLA6023

I

C

=5A, I

B

=10mA

I

C

=–5A, I

B

=–10mA

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=60V

–10

µ

A

V

CB

=–60V

I

EBO

10

µ

A

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

60

V

I

C

=25mA

–60

V

I

C

=–25mA

h

FE

2000

5000

12000

V

CE

=4V, I

C

=5A

2000

5000

12000

V

CE

=–4V, I

C

=–5A

V

CE

(sat)

1.5

V

–1.5

V

V

BE

(sat)

2.0

V

–2.0

V

V

FEC

V

2.0

V

I

FEC

=5A

t

rr

µ

s

1.0

µ

s

I

FEC

=

±

0.5A

t

on

0.8

µ

s

V

CC

25V,

1.0

µ

s

V

CC

–25V,

t

stg

6.0

µ

s

I

C

=5A,

1.4

µ

s

I

C

=–5A,

t

f

2.0

µ

s

I

B1

=–I

B2

=10mA

0.6

µ

s

I

B1

=–I

B2

=–10mA

f

T

80

MHz

V

CE

=12V, I

E

=–1A

120

MHz

V

CE

=–12V, I

E

=1A

C

ob

100

pF

V

CB

=10V, f=1MHz

150

pF

V

CB

=–10V, f=1MHz

3

0.2

0.5

2

1

1

5

10

50 100 200

I

C

=4A

I

C

=2A

I

C

=8A

0.6

V

CE

  (sat) (V)

I

B

  (mA)

3

0.1

0.5

2

1

0

1

5

10

20

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

20

10

5

1

0.5

1

5

10

50 100

500 1000

PW  (mS)

θ

j–

a

  (

°

C / W)

25

20

15

10

5

0

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

–40

0

50

100

150

Ta  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

10

0

×

10

0

×

2

50

×

50

×

2

–3

–0.2

–0.5

–2

–1

–1

–5

–10

–50 –100 –200

I

C

=–8A

I

C

=–4A

I

C

=–2A

0.6

V

CE

  (sat) (V)

I

B

  (mA)

–0.1

–0.5

–2

–3

–1

0

–1

–5

–10

–20

T

a

=–30

°

C

25

°

C

75

°

C

125

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

–10

–5

–5

–1

–0.5

–0.1

–100

–50

–10

–3

–20

10m

s

1m

s

1

0

0

µ

s

Single Pulse
Without Heatsink
T

a

=25

°

C

I

C

  (A)

V

CE

  (V)

Electrical characteristics

10

5

5

1

0.5

0.1

100

50

10

3

20

Single Pulse
Without Heatsink
T

a

=25

°

C

10ms

1ms

1

0

0

µ

s

I

C

  (A)

V

CE

  (V)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

116

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

SLA6024

(T

a

=25

°

C)

Symbol

Unit

V

CBO

60

–60

V

V

CEO

60

–60

V

V

EBO

6

–6

V

I

C

8

–8

A

I

CP

12 (PW

1ms, D

u

50%)

–12 (PW

1ms, D

u

50%)

A

I

FEC

–8

A

I

FECP

–12

A

I

B

0.5

–0.5

A

5 (T

a

=25

°

C)

25 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j–c

 5

°

C/W

P

T

W

Ratings

NPN

PNP

8

7

6

5

4

3

2

1

0

2

3

4

5

6

1

I

C

  (A)

V

CE

  (V)

I

B

=5mA

1.0mA

0.7mA

0.5mA

10000

1000

100

10

0.01

0.1

1

10 12

h

FE

I

C

  (A)

(V

CE

=4V)

typ

10000

1000

100

10

0.01

0.1

1

1012

h

FE

I

C

  (A)

–20

°

C

75

°

C

25

°

C

T

a

=125

°

C

(V

CE

=4V)

8

7

6

5

4

3

2

1

0

0

0.5

1

1.5

2

2.5

3

V

BE

  (V)

I

C

  (A)

T

a

=

20

°

C

(V

CE

=4V)

25

°

C

75

°

C

125

°

C

–8

–7

–6

–5

–4

–3

–2

–1

0

–1

0

–2

–3

–4

–5

–6

V

CE

  (V)

I

C

  (A)

I

B

=–5mA

I

B

=–2mA

I

B

=–1mA

I

B

=–0.6mA

10000

1000

100

10

–0.01

–0.1

–1

–10 –12

typ

h

FE

I

C

  (A)

(V

CE

=–4V)

10000

1000

100

10

–0.01

–0.1

–1

–10–12

(V

CE

=–4V)

h

FE

I

C

  (A)

–20

°

C

T

a

=125

°

C

75

°

C

25

°

C

–8

–7

–6

–5

–4

–3

–2

–1

0

0

–0.5

–1

–1.5

–2

–2.5

–3

V

BE

  (V)

I

C

  (A)

T

a

=

20

°

C

(V

CE

=–4V)

25

°

C

75

°

C

125

°

C

PNP + NPN Darlington

3-phase motor drive

2

R

1

R

2

4

R

3

8

6

9

11

10

1

3

7

5

12

R

1

: 2k

Ω 

typ  R

2

: 80

Ω 

typ  R

3

: 2k

Ω 

typ

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

A

 • • • 

SLA (12-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

117

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

V

CE

(sat)-I

Temperature Characteristics (Typical)

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Characteristic curves

SLA6024

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=60V

–10

µ

A

V

CB

=–60V

I

EBO

10

µ

A

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

60

V

I

C

=10mA

–60

V

I

C

=–10mA

h

FE

2000

5000

12000

V

CE

=4V, I

C

=5A

2000

5000

12000

V

CE

=–4V, I

C

=–5A

V

CE

(sat)

1.5

V

–1.5

V

V

BE

(sat)

2.0

V

–2.0

V

V

FEC

V

2.0

V

I

FEC

=5A

t

rr

µ

s

1.0

µ

s

I

FEC

=

±

0.5A

t

on

0.5

µ

s

V

CC

25V,

0.5

µ

s

V

CC

–25V,

t

stg

2.0

µ

s

I

C

=5A,

1.4

µ

s

I

C

=–5A,

t

f

1.2

µ

s

I

B1

=–I

B2

=10mA

0.6

µ

s

I

B1

=–I

B2

=–10mA

f

T

50

MHz

V

CE

=12V, I

E

=–1A

100

MHz

V

CE

=–12V, I

E

=1A

C

ob

100

pF

V

CB

=10V, f=1MHz

130

pF

V

CB

=–10V, f=1MHz

I

C

=5A, I

B

=10mA

I

C

=–5A, I

B

=–10mA

3

2.5

2

1.5

1

0.5

0

0.5

1

10

100

T

a

=25

°

C

T

a

=–20

°

C

T

a

=125

°

C

T

a

=75

°

C

(I

C

=5A)

V

CE

  (sat) (V)

I

B

  (mA)

1.5

2

1

0.5

0

0.01

0.1

1

10 12

(I

B

=10mA)

I

C

  (A)

V

CE

  (sat) (V)

T

a

=25

°

C

T

a

=–20

°

C

T

a

=75

°

C

T

a

=125

°

C

20

10

1

0.1

0.01

1

5

10

50

100

V

CE

  (V)

I

C

  (A)

Single Pulse
Without Heatsink
T

a

=25

°

C

10

m

S

1m

S

100

µ

s

20

10

5

1

0.5

1

5

10

50 100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

25

20

15

10

5

0

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

–40

0

50

100

150

Ta  (

°

C)

P

T

  (W)

W

ith Infinite Heatsink

Without Heatsink

10

0

×

10

0

×

2

50

×

50

×

2

(I

C

=–5A)

–3

–2.5

–2

–1.5

–1

–0.5

0

–0.5

–1

–10

–100

V

CE

  (sat) (V)

I

B

  (mA)

T

a

=–20

°

C

T

a

=25

°

C

T

a

=75

°

C

T

a

=125

°

C

–2

–1.5

–1

–0.5

0

–0.01

–0.1

–1

–10 –12

T

a

=25

°

C

T

a

=–20

°

C

T

a

=75

°

C

T

a

=125

°

C

V

CE

  (sat) (V)

I

C

  (A)

(I

B

=–10mA)

–20

–10

–1

–0.1

–0.01

–1

–5

–10

–100

–50

V

CE

  (V)

I

C

  (A)

Single Pulse
Without Heatsink
T

a

=25

°

C

10mS

1mS

100

µ

s

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

118

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

SLA6026

(T

a

=25

°

C)

Symbol

Unit

V

CBO

60

–60

V

V

CEO

60

–60

V

V

EBO

6

–6

V

I

C

10

–10

A

I

CP

15 (PW

1ms, D

u

50%)

–15 (PW

1ms, D

u

50%)

A

I

FEC

–10

A

I

FECP

–15

A

I

B

0.5

–0.5

A

5 (T

a

=25

°

C)

35 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

 –40 to +150

°

C

θ

j–c

 3.57

°

C/W

P

T

W

Ratings

NPN

PNP

10

8

9

7

5

3

1

0

6

4

2

1

0

2

3

4

5

6

I

B

=2mA

1mA

0.8mA

0.6mA

0.4mA

V

CE

  (V)

I

C

  (A)

20000

10000

5000

1000

500

100

0.1

1

10 15

h

FE

I

C

  (A)

(V

CE

=4V)

typ

20000

10000

1000

100

(V

CE

=4V)

0.1

1

10 15

h

FE

I

C

  (A)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

15

10

5

0

0

1

2

3

I

C

  (A)

V

BE

  (V)

(V

CE

=2V)

T

a

=

1

2

5

°

C

75

°

C

2

5

°

C

30

°

C

–10

–9

–8

–7

–6

–5

–4

–3

–2

–1

0

0

–1

–2

–3

–4

–5

–6

–3mA

–2mA

–1mA

–0.6mA

I

C

  (A)

V

CE

  (V)

I

B

=

5

m

A

20000

10000

5000

1000

500

100

–0.1

–1

–10 –15

I

C

  (A)

h

FE

(V

CE

=–4V)

typ

20000

10000

1000

100

h

FE

–0.1

–1

–10

–15

I

C

  (A)

(V

CE

=–4V)

I

B

=125

°

C

75

°

C

25

°

C

–30

°

C

(V

CE

=–2V)

–15

–10

–5

0

0

–1

–2

–3

V

BE

  (V)

I

C

  (A)

T

a

=

1

2

5

°

C

7

5

°

C

25

°

C

30

°

C

2

R

1

R

2

4

R

3

8

6

9

11

10

1

3

7

5

12

R

1

: 2k

Ω 

typ  R

2

: 80

Ω 

typ  R

3

: 2k

Ω 

typ

PNP + NPN Darlington

3-phase motor drive

External dimensions

A

 • • • 

SLA (12-pin)

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

119

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

V

CE

(sat)-I

Temperature Characteristics (Typical)

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Characteristic curves

SLA6026

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=60V

–10

µ

A

V

CB

=–60V

I

EBO

10

µ

A

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

60

V

I

C

=10mA

–60

V

I

C

=–10mA

h

FE

2000

5000

12000

V

CE

=4V, I

C

=6A

2000

5000

12000

V

CE

=–4V, I

C

=–6A

V

CE

(sat)

1.5

V

–1.5

V

V

BE

(sat)

2.0

V

–2.0

V

V

FEC

V

2.0

V

I

FEC

=–6A

t

rr

µ

s

4.0

µ

s

I

FEC

=

±

0.5A

t

on

0.6

µ

s

V

CC

24V,

0.7

µ

s

V

CC

–24V,

t

stg

2.0

µ

s

I

C

=6A,

1.2

µ

s

I

C

=–6A,

t

f

1.5

µ

s

I

B1

=–I

B2

=12mA

0.7

µ

s

I

B1

=–I

B2

=–12mA

f

T

50

MHz

V

CE

=12V, I

E

=–1A

50

MHz

V

CE

=–12V, I

E

=1A

C

ob

100

pF

V

CB

=10V, f=1MHz

180

pF

V

CB

=–10V, f=1MHz

I

C

=6A, I

B

=12mA

I

C

=–6A, I

B

=–12mA

3

2

2.5

1

1.5

0

0.5

0.3

1

10

100

500

(I

C

=5A)

V

CE

  (sat) (V)

I

B

  (mA)

I

B

=125

°

C

–30

°

C

75

°

C

25

°

C

3

2

1

0

0.01

0.1

1

10 15

V

CE

  (sat) (V)

I

C

  (A)

(I

B

=10mA)

–30

°

C

25

°

C

75

°

C

T

a

=125

°

C

20

10

1

0.1

1

5

10

50

100

100

µ

S

1ms

V

CE

  (V)

I

C

  (A)

Single Pulse
Without Heatsink
T

a

=25

°

C

20

10

1

0.3

1

10

100

1000 2000

θ

j–

a

  (

°

C / W)

PW  (mS)

40

30

20

10

0
–40

0

50

100

150

Ta  (

°

C)

P

T

  (W)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2

–3

–2

–2.5

–1

–1.5

0

–0.5

–0.3

–1

–10

–100

–500

V

CE

  (sat) (V)

I

B

  (mA)

(I

C

=–5A)

T

a

=125

°

C

25

°

C

75

°

C

–30

°

C

–3

–2

–1

0

V

CE

  (sat) (V)

I

C

  (A)

–0.01

–0.1

–1

–10 –15

(I

B

=–10mA)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

–20

–10

–1

–0.1

–1

–5

–10

–50

–100

10

0

µ

S

1ms

V

CE

  (V)

I

C

  (A)

Single Pulse
Without Heatsink
T

a

=25

°

C

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

120

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

SLA8001

R

1

: 500k

Ω 

typ  R

2

: 350

Ω 

typ

5

R

2

2

3
6

4

8

7

10

9

12

11

1

R

1

(T

a

=25

°

C)

Symbol

Unit

V

CBO

60

–60

V

V

CEO

60

–60

V

V

EBO

6

–6

V

I

C

12

–12

A

I

B

3

–3

A

P

T

5 (T

a

=25

°

C)

W

40 (T

c

=25

°

C)

V

ISO

1000 (Between fin and lead pin, AC)

V

rms

T

j

150

°

C

T

stg

 –40 to +150

°

C

θ

j–c

3.12

°

C/W

Ratings

NPN

PNP

12

10

8

6

4

2

0

0

1

2

3

4

5

6

V

CE

  (V)

I

C

  (A)

I

B

=200m

A

150m

A

100mA

60mA

40mA

20mA

 10mA

500

100

50

10

5

0.02

0.1

5

10

2

12

0.05

0.5

1

typ

(V

CE

=1V)

h

FE

I

C  

(A)

500

100

50

10

5

0.02

0.1

5

10

2

12

0.05

0.5

1

75

°

C

25

°

C

–30

°

C

T

a

=125

°

C

(V

CE

=1V)

h

FE

I

C

  (A)

2

0

0

0.5

1.0

1.5

4

6

8

10

12

T

a

=125

°

C

7

5

°

C

25

°

C

30

°

C

(V

CE

=1V)

I

C

  (A)

V

BE

  (V)

–12

–10

–8

–6

–4

–2

0

0

–1

–2

–3

–4

–5

–6

V

CE

  (V)

I

C

  (A)

I

B

=

200mA

–150m

A

–100mA

–60mA

–40mA

–20mA

–10mA

500

100

50

10

5

–0.02

–0.1

–5

–10

2

–12

–0.05

–0.5

–1

typ

(V

CE

=–1V)

h

FE

I

C

  (A)

500

100

50

10

5

–0.02

–0.1

–5 –10

2

–12

–0.05

–0.5

–1

T

a

=125

°

C

75

°

C

25

°

C

–3

0

°

C

(V

CE

=–1V)

h

FE

I

C

  (A)

–2

0

0

–0.5

–1.0

–1.5

–4

–6

–8

–10

–12

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

(V

CE

=–1V)

I

C

  (A)

V

BE  

(V)

PNP + NPN

H-bridge

External dimensions

A

 • • • 

SLA (12-pin)

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

121

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

θ

j-a

-PW Characteristics

V

CE

(sat)-I

Temperature Characteristics (Typical)

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Characteristic curves

SLA8001

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

100

µ

A

V

CB

=60V

–100

µ

A

V

CB

=–60V

I

EBO

60

mA

V

EB

=6V

–60

mA

V

EB

=–6V

V

CEO

60

V

I

C

=25mA

–60

V

I

C

=–25mA

h

FE

50

V

CE

=1V, I

C

=6A

50

V

CE

=–1V, I

C

=–6A

V

CE

(sat)

0.35

V

I

C

=6A, I

B

=0.3A

–0.35

V

I

C

=–6A, I

B

=–0.3A

V

FEC

2.5

V

I

FEC

=10A

2.5

V

I

FEC

=10A

1.5

5

1.0

0.5

0

10

50

100

500 1000

5000

3A

6A

9A

I

C

=12A

1A

V

CE

  (sat) (V)

I

B

  (mA)

(I

C

 / I

B

=20)

1.0

0.5

0

0.02

0.05 0.1

0.5 1

5

1012

V

CE

  (sat) (V)

I

C

  (A)

Ta=125

°

C

75

°

C

25

°

C

–30

°

C

10

5

5

1

0.5

0.2

100

50

10

3

1m

s

30

Single Pulse
Without Heatsink
T

a

=25

°

C

10ms

I

C

  (A)

V

CE

  (V)

10

5

1

0.5

0.3

1

10

5

50

100

500

1000

PW  (mS)

θ

j–

a

  (

°

C / W)

40

30

20

10

0

0

–40

50

100

150

P

T

  (W)

Ta  (

°

C)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2mm

–1.5

–5

–1.0

–0.5

0

–10

–50 –100

–500 –1000

I

C

=–12A

–1A

–5000

–3A

–6A

–9A

V

CE

  (sat) (V)

I

B

  (mA)

–1.0

–0.5

0

–0.02 –0.05 –0.1

–1

–5 –10–12

–0.5

I

C

  (A)

V

CE

  (sat) (V)

(I

C

 / I

B

=20)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

–10

–5

–5

–1

–0.5

–0.2

–100

–50

–10

–3

1ms

–30

Single Pulse
Without Heatsink
T

a

=25

°

C

10ms

I

C

  (A)

V

CE

  (V)

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

122

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–60

V

V

CEO

–60

V

V

EBO

–6

V

I

C

–4

A

I

B

–1

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–10

µ

A

V

CB

=–60V

I

EBO

–10

mA

V

EB

=–6V

V

CEO

–60

V

I

C

=–10mA

h

FE

2000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

–1.5

V

I

C

=–3A, I

B

=–6mA

P

T

W

SMA4020

Specification

min

typ

max

R

1

: 2k

Ω 

typ  R

2

: 150

Ω 

typ

R

1

R

2

10

12

7

8

6

5

3

1

11

9

4

2

–6

–4

–2

0

0

–1

–2

–3

–4

–5

–6

–0.8mA

–1.0mA

–1.2mA

–1.5mA

–1.8mA

I

B

=

2.2m

A

I

C

  (A)

V

CE

  (V)

–0.9mA

10000

5000

1000

500

100

–0.03

50

–0.1

–0.5

–1

–5 –6

typ

(V

CE

=–4V)

h

FE

I

C

  (A)

10000

5000

1000

500

100

–0.03

50

–0.1

–0.5

–1

–5 –6

–30

°

C

T

a

=1

25

°

C

75

°

C

25

°

C

(V

CE

=–4V)

h

FE

I

C

  (A)

–3

–1

0
–0.5

–1

–5 –6

–2

T

a

=–30

°

C

25

°

C

125

°

C

75

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

–0.2

–3

–2

–1

0

–0.5

–1

–5

–10

–50

–100

I

C

=–4A

I

C

=–2A

I

C

=–1A

V

CE

  (sat) (V)

I

B

  (mA)

0

–1

–2

–3

–6

–5

–4

–3

–2

–1

0

3

0

°

C

T

a

=125

°

C

75

°

C

25

°

C

(V

CE

=–4V)

I

C

  (A)

V

BE

  (V)

20

10

5

1

0.5

1

5

10

50

100

500 1000

PW  (mS)

θ

j–

a

  (

°

C / W)

20

15

10

5

0
–40

0

50

100

150

P

T

  (W)

T

a

  (

°

C)

With Infinite Heatsink

Without Heatsink

–10

–5

–1

–0.5

–0.1

–0.05

–0.03

–3

–5

–10

–50

–100

Single Pulse
Without Heatsink
T

a

=25

°

C

10m

s

1m

s

I

C

  (A)

V

CE

  (V)

PNP Darlington

General purpose

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

123

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SMA4021

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–60

V

V

CEO

–60

V

V

EBO

–6

V

I

C

–3

A

I

CP

–6 (PW

1ms, D

u

50%)

A

I

B

–0.5

A

I

F

–6 (PW

0.5ms, D

u

25%)

A

I

FSM

–8 (PW

10ms, Single pulse)

A

V

R

100

V

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–10

µ

A

V

CB

=–60V

I

EBO

–10

mA

V

EB

=–6V

V

CEO

–60

V

I

C

=–10mA

h

FE

2000

5000

12000

V

CE

=–4V, I

C

=–2A

V

CE

(sat)

–1.5

V

V

BE

(sat)

–2.0

V

P

T

W

I

C

=–2A, I

B

=–4mA

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

R

100

V

I

R

=10

µ

A

V

F

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=100V

t

rr

100

ns

I

F

=

±

100mA

Specification

min

typ

max

Specification

min

typ

max

R

1

: 2k

Ω 

typ  R

2

: 150

Ω 

typ

2

3

4

R

1

R

2

5

6

1

9

10

11

12

7

8

–6

–4

–2

0

0

–1

–2

–3

–4

–5

–6

–0.8mA

–1.0mA

–1.2m

A

–1.5m

A

–1.8m

A

I

B

=

2

.2

m

A

I

C

  (A)

V

CE

  (V)

–0.9mA

–0.03

10000

5000

1000

500

100

50

–0.05 –0.1

–0.5

–1

–5 –6

typ

(V

CE

=–4V)

h

FE

I

C

  (A)

–0.03

10000

5000

1000

500

100

50

–0.05 –0.1

–0.5

–1

–5 –6

T

a

=125

˚C

–30

˚C

75˚C

25˚C

(V

CE

=–4V)

h

FE

I

C

  (A)

–3

–1

0
–0.5

–1

–5 –6

–2

T

a

=–30

°

C

25

°

C

125

°

C

75

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

I

C

=–4A

–3

–0.2

–0.5 –1

–5

–10

–50

–2

–1

0

–100

I

C

=–2A

I

C

=–1A

V

CE

  (sat) (V)

I

B

  (mA)

–6

–4

–2

0

0

–1

–2

–3

–1

–3

–5

3

0

°

C

T

a

=125

°

C

75

°

C

25

°

C

(V

CE

=–4V)

I

C

  (A)

V

BE

  (V)

20

10

5

1

0.5

1

5

10

50

100

500 1000

PW  (mS)

θ

j–

a

  (

°

C / W)

20

15

10

5

0
–40

0

50

100

150

P

T

  (W)

T

a

  (

°

C)

W

ith

 In

fin

ite

 H

ea

ts

in

k

Without Heatsink

–10

–0.1

–0.03

–5

–1

–0.5

–0.05

–5

–3

–10

–50

–100

10ms

1m

s

100

µ

s

Single Pulse
Without Heatsink
T

a

=25

°

C

10

µ

s

I

C

  (A)

V

CE

  (V)

PNP Darlington

With built-in flywheel diode

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Diode for flyback voltage absorption

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

124

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

120

V

V

CEO

100

V

V

EBO

6

V

I

C

3

A

I

CP

5 (PW

1ms, D

u

50%)

A

I

B

0.2

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=120V

I

EBO

10

mA

V

EB

=6V

V

CEO

100

V

I

C

=25mA

h

FE

2000

6000

15000

V

CE

=4V, I

C

=1.5A

V

CE

(sat)

1.1

1.5

V

V

BE

(sat)

1.7

2.0

V

t

on

0.5

µ

s

V

CC

30V

t

stg

2.2

µ

s

I

C

=1.5A

t

f

0.9

µ

s

I

B1

=–I

B2

=3mA

f

T

40

MHz

V

CE

=12V, I

E

=–0.5A

C

ob

30

pF

V

CB

=10V, f=1MHz

P

T

W

SMA4030

Specification

min

typ

max

I

C

=1.5A, I

B

=3mA

R

1

: 3k

Ω 

typ  R

2

: 200

Ω 

typ

1

2

R

1

R

2

3

5

4

6

9

7

11

10

8

12

0

0

5

4

3

1

2

3

2

1

4

5

6

1mA

2m

A

0.6m

A

0.4mA

0.3mA

I

B

=10mA

I

C

  (A)

V

CE

  (V)

20000

0.03

10000

5000

1000

500

100

50

0.05

0.1

0.5

1

5

typ

(V

CE

=4V)

h

FE

I

C

  (A)

20000

0.03

10000

5000

1000

500

100

50

0.05 0.1

0.5

1

5

–3

0

°

C

T

a

=125

°

C

75

°

C

25

°

C

(V

CE

=4V)

h

FE

I

C

  (A)

0.5

0

1

2

3

1

5

25

°

C

75

°

C

T

a

=–30

°

C

125

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

0.1

0

1

2

3

0.5

1

5

10

50

I

C

=3A

I

C

=1.5A

I

C

=1A

V

CE

  (sat) (V)

I

B

  (mA)

0

0

5

4

3

1

2

1

2

3

30

°

C

T

a

=125

°

C

75

°

C

25

°

C

(V

CE

=4V)

I

C

  (A)

V

BE

  (V)

20

10

1

5

0.5

0

5

10

50

100

500 1000

PW  (mS)

θ

j–

a

  (

°

C / W)

20

15

10

5

0
–40

0

50

100

150

P

T

  (W)

T

a

  (

°

C)

W

ith Infinite

 H

eatsink

Without Heatsink

10

0.1

0.03

5

1

0.5

0.05

5

3

10

50

100

100

µ

s

1m

s

10ms

I

C

  (A)

V

CE

  (V)

Single Pulse
Without Heatsink
T

a

=25

°

C

NPN Darlington

General purpose

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

125

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SMA4032

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

120

V

V

CEO

100

V

V

EBO

6

V

I

C

3

A

I

CP

5 (PW

1ms, D

u

50%)

A

I

B

0.2

A

I

F

3 (PW

0.5ms, D

u

25%)

A

I

FSM

5 (PW

10ms, Single pulse)

A

V

R

120

V

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=120V

I

EBO

10

mA

V

EB

=6V

V

CEO

100

V

I

C

=25mA

h

FE

2000

6000

15000

V

CE

=4V, I

C

=1.5A

V

CE

(sat)

1.1

1.5

V

V

BE

(sat)

1.7

2.0

V

t

on

0.5

µ

s

V

CC

30V,

t

stg

2.2

µ

s

I

C

=1.5A,

t

f

0.9

µ

s

I

B1

=–I

B2

=3mA

f

T

40

MHz

V

CE

=12V, I

E

=–0.5A

C

ob

30

pF

V

CB

=10V, f=1MHz

P

T

W

I

C

=1.5A, I

B

=3mA

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.6

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

Specification

min

typ

max

Specification

min

typ

max

R

1

: 3k

Ω 

typ  R

2

: 200

Ω 

typ

1

2

3

4

6

5

R

1

R

2

8

9

10

11

7

12

0

0

5

4

3

1

2

3

2

1

4

5

6

1mA

2m

A

0.6m

A

0.4mA

0.3mA

I

B

=10m

A

I

C

  (A)

V

CE

  (V)

20000

0.03

10000

5000

1000

500

100

50

0.05

0.1

0.5

1

5

typ

(V

CE

=4V)

h

FE

I

C

  (A)

20000

0.03

10000

5000

1000

500

100

50

0.05 0.1

0.5

1

5

–3

0

°

C

T

a

=125

°

C

75

°

C

25

°

C

(V

CE

=4V)

h

FE

I

C

  (A)

0.5

0

1

2

3

1

5

25

°

C

75

°

C

T

a

=–30

°

C

125

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

0.1

0

1

2

3

0.5

1

5

10

50

I

C

=3A

I

C

=1.5A

I

C

=1A

V

CE

  (sat) (V)

I

B

  (mA)

0

0

5

4

3

1

2

1

2

3

30

°

C

T

a

=

1

2

5

°

C

75

°

C

25

°

C

(V

CE

=4V)

I

C

  (A)

V

BE

  (V)

20

10

1

5

0.5

0

5

10

50

100

500 1000

PW  (mS)

θ

j–

a

  (

°

C / W)

20

15

10

5

0
–40

0

50

100

150

P

T

  (W)

T

a

  (

°

C)

With Infinite Heatsink

Without Heatsink

10

0.1

0.03

5

1

0.5

0.05

5

3

10

50

100

100

µ

s

1

m

s

10

m

s

I

C

  (A)

V

CE

  (V)

Single Pulse
Without Heatsink
T

a

=25

°

C

NPN Darlington

With built-in flywheel diode

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

External dimensions

B

 • • • 

SMA

Diode for flyback voltage absorption

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

126

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SMA4033

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

120

V

V

CEO

100

V

V

EBO

6

V

I

C

2

A

I

CP

4 (PW

1ms, D

u

50%)

A

I

B

0.2

A

I

F

2 (PW

0.5ms, D

u

25%)

A

I

FSM

4 (PW

10ms, Single pulse)

A

V

R

120

V

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=120V

I

EBO

10

mA

V

EB

=6V

V

CEO

100

V

I

C

=25mA

h

FE

2000

6000

15000

V

CE

=4V, I

C

=1A

V

CE

(sat)

1.1

1.5

V

V

BE

(sat)

1.7

2.0

V

P

T

W

I

C

=1A, I

B

=2mA

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.8

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

Specification

min

typ

max

Specification

min

typ

max

R

1

: 4k

Ω 

typ  R

2

: 150

Ω 

typ

1

2

3

4

6

5

R

1

R

2

8

9

10

11

7

12

4

2

0

0

1

I

C

  (A)

V

CE

  (V)

2

3

1.2mA

0.6mA

0.4mA

0.3mA

I

B

=4mA

1

3

4

5

6

3mA

2mA

20

0.02

0.05

h

FE

I

C

  (A)

0.1

0.5

1

4

(V

CE

=4V)

10000

5000

1000

500

100

50

typ

20

0.02

0.05

h

FE

I

C

  (A)

0.1

0.5

1

4

(V

CE

=4V)

10000

5000

1000

500

100

50

75

°

C

25

°

C

–3

0

°

C

T

a

=125

°

C

30

°

C

T

a

=

12

5

°

C

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

0

1

2

3

0.2

I

C

  (A)

0.5

1

4

25

°

C

7

5

°

C

0.1

I

B  (

mA)

5

1

0.5

0

2

1

3

V

CE

  (sat) (V)

(I

C

=1A)

T

a

=125

°

C

3

0

°

C

2

5

°

C

75

°

C

4

2

0

0

(V

CE

=4V)

I

C

  (A)

V

BE

  (V)

1

3

1

2

3

75

°

C

25

°

C

30

°

C

T

a

=125

°

C

20

15

10

5

0
–40

0

50

100

150

P

T

  (W)

T

a

  (

°

C)

W

ith Infinite H

eatsink

Without Heatsink

PW  (mS)

0.5

100

1000

500

50

10

5

1

5

1

0.5

10

20

θ

j–

a

  (

°

C / W)

0.2

5

1

0.5

0.1

0.05

I

C

  (A)

V

CE

  (V)

3

100

µ

s

1ms

10ms

Single Pulse
Without Heatsink
T

a

=25

°

C

5

10

50

100

NPN Darlington

With built-in flywheel diode

External dimensions

B

 • • • 

SMA

Diode for flyback voltage absorption

Electrical characteristics

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

127

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

100

V

V

GSS

±

20

V

I

D

±

4

A

I

D(

pulse

)

±

8 (

PW

1ms

)

A

E

AS

*

16

mJ

4 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

28 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

W

θ

j–a

31.2 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j–c

4.46 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=1mH, I

D

=5A, unclamped, see Fig. E on page 15.

SMA5101

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

I

DSS

250

µ

A

V

DS

=100V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

1.1

1.7

S

V

DS

=10V, I

D

=4A

R

DS(ON)

0.50

0.60

V

GS

=10V, I

D

=4A

Ciss

180

pF

V

DS

=25V, f=1.0MHz,

Coss

82

pF

V

GS

=0V

t

on

40

ns

I

D

=4A, V

DD

50V, V

GS

=10V,

t

off

40

ns

see Fig. 3 on page 16.

V

SD

1.2

2.0

V

I

SD

=4A, V

GS

=0V

t

rr

250

ns

I

SD

=

±

100mA

P

T

Specification

min

typ

max

1

2

3

5

4

6

8

9

7

12

11

10

0

20

8

7

3

0

6V

7V

V

DS

  (V)

I

D

  (A)

10

6

5

4

2

1

10V

V

GS

=5V

(V

DS

=10V)

25

°

C

125

°

C

0

2

4

6

10

I

D

  (A)

V

GS

  (V)

T

C

=–40

°

C

8

8

7

3

0

6

5

4

2

1

(V

GS

=10V)

0

0

1

2

8

0.2

0.4

0.6

0.8

I

D

  (A)

R

DS  (ON)

 (

)

3

4

5

6

7

0.2

0.05

0.5

1

1

5

(V

DS

=10V)

25

°

C

125

°

C

I

D

  (A)

Re  (yfs) (S)

5

8

0.5

T

C

=–40

°

C

0.1

–40

0

0

50

100

150

0.2

0.8

1.0

1.2

V

GS

=10V

I

D

=4A

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.6

0.4

0

10

20

30

40

50

10

50

100

600

V

GS

=0

f=1MH

z

Ciss

Coss

Crss

V

DS

  (V)

Capacitance  (pF)

5

0

0

1.0

1.5

2

7

8

V

GS

=0V

5V

I

DR

  (A)

V

SD

  (V)

0.5

10V

1

3

4

6

5

0.5

0.1

1

5

10

50

100

1

5

10

(T

C

=25

°

C)

I

D

  (pulse)  max

1ms

100

µ

s

10

ms  (1shot)

R

D

S

  (ON)

I

D

  (A)

V

DS

  (V)

LIMITED

0.5

N-channel

General purpose

25

30

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

128

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SMA5102

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

I

DSS

250

µ

A

V

DS

=100V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

1.1

1.7

S

V

DS

=10V, I

D

=4A

R

DS(

ON

)

0.50

0.60

V

GS

=10V, I

D

=4A

Ciss

180

pF

V

DS

=25V, f=1.0MHz,

Coss

82

pF

V

GS

=0V

t

on

40

ns

I

D

=4A, V

DD

50V, V

GS

=10V,

t

off

40

ns

 see Fig. 3 on page 16.

V

SD

1.2

2.0

V

I

SD

=4A, V

GS

=0V

t

rr

250

ns

I

SD

=

±

100mA

(T

a

=25

°

C)

Symbol

Ratings

Uni

V

DSS

100

V

V

GSS

±

20

V

I

D

±

4

A

I

D(

pulse

)

±

8 (

PW

1ms

)

A

E

AS

*

16

mJ

I

F

4 (

PW

0.5ms, Du

25%

)

A

I

FSM

8 (

PW

10ms, Single pulse

)

A

V

R

120

V

4 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

28 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j–a

31.2 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j–c

4.46 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=1mH, I

D

=5A, unclamped, see Fig. E on page 15.

P

T

Specification

min

typ

max

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.0

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

Specification

min

typ

max

1

2

5

4

6

3

8

9

12

11

10

7

0

20

8

7

3

0

6V

7V

V

DS

  (V)

I

D

  (A)

10

6

5

4

2

1

10V

V

GS

=5V

25

°

C

125

°

C

0

2

4

6

10

I

D

  (A)

V

GS

  (V)

T

C

=–40

°

C

8

8

7

3

0

6

5

4

2

1

(V

DS

=10V)

0

0

1

2

8

0.2

0.4

0.6

0.8

I

D

  (A)

R

DS  (ON)

 (

)

3

4

5

6

7

(V

DS

=10V)

0.2

0.05

0.5

1

1

5

(V

DS

=10V)

25

°

C

125

°

C

I

D

  (A)

Re  (yfs) (S)

5

8

0.5

T

C

=–40

°

C

0.1

–40

0

0

50

100

150

0.2

0.8

1.0

1.2

V    =10V

GS

I

D

=4A

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.6

0.4

0

10

20

30

40

50

10

50

100

600

V

DS

  (V)

Capacitance  (pF)

5

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0

1.0

1.5

2

7

8

I

DR

  (A)

V

SD

  (V)

0.5

1

3

4

6

5

5V

10V

V

GS

=0V

0.5

0.1

1

5

10

50

100

1

5

10

I

D

  (A)

V

DS

  (V)

0.5

(T

C

=25

°

C)

1m

s

10

ms  (1shot)

LIM

IT

E

D

100

µ

s

I

D

  (pulse)  max

R

D

S

  (O

N

)

25

30

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

N-channel

With built-in flywheel diode

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Electrical characteristics

Diode for flyback voltage absorption

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

130

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

SMA5103

12

10

11

1

2

3

7

9
4

6

8

5

Pch

Nch

(T

a

=25

°

C)

Symbol

Unit

V

DSS

60

–60

V

V

GSS

±

20

20

V

I

D

±

5

4

A

I

D(pulse)

±

10 (PW

1ms)

8 (PW

1ms)

A

E

AS

*

2

mJ

4 (Ta=25

°

C, with all circuits operating, without heatsink)

W

28 (Tc=25

°

C,with all circuits operating, with infinite heatsink)

W

θ

j–a

31.2 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j–c

4.46 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=1mH, I

D

=2A, unclamped, see Fig. E on page 15.

P

T

Ratings

N channel

P channel

0

2

10

10

8

2

0

V

DS

  (V)

I

D

  (A)

4

6

8

6

4

V

GS

=4V

7V

6V

10V

6

0

8

10

0

2

4

8

I

D

  (A)

V

GS

  (V)

4

2

6

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

2

4

10

0.05

0.10

0.15

0.20

I

D

  (A)

R

DS  (ON)

 (

)

6

8

(V

GS

=10V)

–40

0

0

50

100

150

0.1

0.2

0.3

R

DS  (ON)

 (

)

T

C

  (

°

C)

I

D

=5A

V

GS

=10V

0

–2

–10

–8

–6

0

V

DS

  (V)

I

D

  (A)

–4

–6

–8

–2

–4

V

GS

=–4V

–7V

–6V

–5V

–10V

I

D

  (A)

V

GS

  (V)

0

–2

–10

–4

–6

–8

–8

–6

0

–2

–4

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

–2

0.2

0.4

0.5

0.6

I

D

  (A)

R

DS  (ON)

 (

)

–4

–6

–8

(V

GS

=–10V)

0.3

0.1

–40

0

0

50

100

150

0.6

0.8

1.0

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.4

0.2

I

D

=–4A

V

GS

=–10V

N-channel + P-channel

H-bridge

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

131

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SMA5103

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

60

V

I

D

=250

µ

A, V

GS

=0V

–60

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

500

nA

V

GS

= 20V

I

DSS

250

µ

A

V

DS

=60V, V

GS

=0V

–250

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

2.2

3.3

S

V

DS

=10V, I

D

=5A

1.6

2.2

S

V

DS

=–10V, I

D

=–4A

R

DS(ON)

0.17

0.22

V

GS

=10V, I

D

=5A

0.38

0.55

V

GS

=–10V, I

D

=–4A

Ciss

300

pF

V

DS

=25V, f=1.0MHz,

270

pF

V

DS

=–25V, f=1.0MHz,

Coss

160

pF

V

GS

=0V

170

pF

V

GS

=0V

t

on

35

ns

I

D

=5A, V

DD

30V, V

GS

=10V,

60

ns

I

D

=–4A, V

DD

–30V, V

GS

=–10V,

t

off

35

ns

 see Fig. 3 on page 16.

60

ns

 see Fig. 4 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

–4.4

–5.5

V

I

SD

=–4A, V

GS

=0V

t

rr

140

ns

I

SD

=

±

100mA

150

ns

I

SD

= 100mA

0.3

0.08

0.5

1

1

5

10

I

D

  (A)

Re(yfs) (S)

5

10

0.5

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

10

20

30

40

50

10

100

1000

V

DS

  (V)

Capacitance  (pF)

500

50

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0

1.0

1.5

2

8

10

I

DR

  (A)

V

SD

  (V)

0.5

4

6

5V

10V

V

GS

=0V

0.5

0.1

1

5

10

50

100

0.5

1

5

10

20

I

D

  (A)

V

DS

  (V)

(T

C

=25

°

C)

1m

s

10

m

s  (1

sh

ot)

10

0

µ

s

LIMITED

R

D

S  (O

N)

I

D

  (pulse)  max

0.3

–0.5

–1

1

5

I

D

  (A)

Re  (yfs) (S)

–5

–8

0.5

–0.1

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

–10

–20

–30

–40

–50

50

100

700

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

–5

I

DR

  (A)

V

SD

  (V)

–1

–8

–6

0

–4

–2

–2

–4

–5V

–10V

V

GS

=0V

–0.5

–0.1

–1

–5

–10

–50

–100

–1

–5

–10

I

D

  (A)

V

DS

  (V)

–0.5

(T

C

=25

°

C)

1m

s

10

m

s  (1shot)

10

0

µ

s

LIM

ITE

D

R

DS  (ON)

I

D

  (pulse)  max

25

30

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

132

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

SMA5104

2

4

3

8

6

5

7

9

11

12

10

1

Pch

Nch

(T

a

=25

°

C)

Symbol

Unit

V

DSS

60

–60

V

V

GSS

±

20

20

V

I

D

±

5

4

A

I

D(pulse)

±

10 (PW

1ms)

8 (PW

1ms)

A

E

AS

*

2

mJ

4 (Ta=25

°

C, with all circuits operating, without heatsink)

W

28 (Tc=25

°

C,with all circuits operating, with infinite heatsink)

W

θ

j-a

31.2 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

4.46 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=1mH, I

D

=2A, unclamped, see Fig. E on page 15.

P

T

Ratings

N channel

P channel

0

2

10

10

8

2

0

V

DS

  (V)

I

D

  (A)

4

6

8

6

4

V

GS

=4V

7V

6V

5V

10V

6

0

8

10

0

2

4

8

I

D

  (A)

V

GS

  (V)

4

2

6

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

2

4

10

0.05

0.10

0.15

0.20

I

D  

(A)

R

DS  (ON)

 (

)

6

8

(V

GS

=10V)

–40

0

0

50

100

150

0.1

0.2

0.3

R

DS  (ON)

 (

)

T

C

  (

°

C)

I

D

=5A

V

GS

=10V

0

–2

–10

–8

–6

0

V

DS

  (V)

I

D

  (A)

–4

–6

–8

–2

–4

V

GS

=–4V

–7V

–6V

–5V

–10V

0

0

–2

0.2

0.4

0.5

0.6

I

D

  (A)

R

DS  (ON)

 (

)

–4

–6

–8

0.3

0.1

(V

GS

=–10V)

–40

0

0

50

100

150

0.6

0.8

1.0

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.4

0.2

I

D

=–4A

V

GS

=–10V

N-channel + P-channel

3-phase motor drive

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

I

D

  (A)

V

GS

  (V)

0

–2

–10

–4

–6

–8

–8

–6

0

–2

–4

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

133

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SMA5104

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

60

V

I

D

=250

µ

A, V

GS

=0V

–60

V

I

D

=–250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

20V

500

nA

V

GS

= 20V

I

DSS

250

µ

A

V

DS

=60V, V

GS

=0V

–250

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

–2.0

–4.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

2.2

3.3

S

V

DS

=10V, I

D

=5A

1.6

2.2

S

V

DS

=–10V, I

D

=–4A

R

DS(ON)

0.17

0.22

V

GS

=10V, I

D

=5A

0.38

0.55

V

GS

=–10V, I

D

=–4A

Ciss

300

pF

V

DS

=25V, f=1.0MHz,

270

pF

V

DS

=–25V, f=1.0MHz,

Coss

160

pF

V

GS

=0V

170

pF

V

GS

=0V

t

on

35

ns

I

D

=5A, V

DD

30V, V

GS

=10V,

60

ns

I

D

=–4A, V

DD

–30V, V

GS

=–10V,

t

off

35

ns

 

see Fig. 3 on page 16.

60

ns

 see Fig. 4 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

–4.4

–5.5

V

I

SD

=–4A, V

GS

=0V

t

rr

140

ns

I

SD

=

±

100mA

150

ns

I

SD

= 100mA

0.3

0.08

0.5

1

1

5

10

I

D

  (A)

Re  (yfs) (S)

5

10

0.5

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

10

20

30

40

50

10

100

1000

V

DS

  (V)

Capacitance  (pF)

500

50

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0

1.0

1.5

2

8

10

I

DR

  (A)

V

SD

  (V)

0.5

4

6

5V

10V

V

GS

=0V

0.5

0.1

1

5

10

50

100

0.5

1

5

10

20

I

D

  (A)

V

DS

  (V)

(T

C

=25

°

C)

1ms

10

ms  (1shot)

100

µ

s

LIMITED

R

DS  (ON)

I

D

  (pulse)  max

0.3

–0.5

–1

1

5

I

D

  (A)

Re  (yfs) (S)

–5

–8

0.5

–0.1

(V

DS

=–10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

–10

–20

–30

–40

–50

50

100

700

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

–3

–5

I

DR

  (A)

V

SD

  (V)

–1

–8

–6

0

–4

–2

–2

–4

–5V

–10V

V

GS

=0V

–0.5

–0.1

–1

–5

–10

–50 –100

–1

–5

–10

I

D

  (A)

V

DS

  (V)

–0.5

(T

C

=25

°

C)

1ms

10

m

s  (1shot)

100

µ

s

LIM

ITED

R

D

S

  (

O

N

)

I

D

  (pulse)  max

25

30

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

W

ith Infinite

 H

ea

tsin

k

Without Heatsink

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

134

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SMA5105

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

10V

I

DSS

250

µ

A

V

DS

=100V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

3.1

4.5

S

V

DS

=10V, I

D

=5A

0.27

0.30

V

GS

=10V, I

D

=2.5A

0.38

0.41

V

GS

=4V, I

D

=2.5A

Ciss

470

pF

V

DS

=25V, f=1.0MHz,

Coss

130

pF

V

GS

=0V

t

on

70

ns

I

D

=5A, V

DD

50V, V

GS

=5V,

t

off

50

ns

 see Fig. 3 on page 16.

V

SD

1.2

2.0

V

I

SD

=5A, V

GS

=0V

t

rr

330

ns

I

SD

=

±

100mA

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

100

V

V

GSS

±

10

V

I

D

±

5

A

I

D(

pulse

)

±

10 (

PW

1ms

)

A

E

AS

*

32

mJ

I

F

5 (

PW

0.5ms, Du

25%

)

A

I

FSM

10 (

PW

10ms, Single pulse

)

A

V

R

120

V

4 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

28 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

W

θ

j–a

31.2 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j–c

4.46 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=2mH, I

D

=5A, unclamped, see Fig. E on page 15.

P

T

Specification

min

typ

max

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.0

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

Specification

min

typ

max

R

DS(ON)

1

2

5

4

6

3

8

9

12

11

10

7

0

2

10

8

6

0

V

DS

  (V)

I

D

  (A)

4

6

8

4

2

10

V

GS

=2.5V

3.5V

4V

3V

10V

0

1

2

3

4

I

D

  (A)

V

GS

  (V)

8

6

0

4

2

10

5

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

0

0

1

2

3

0.1

0.2

0.3

0.4

I

D

  (A)

R

DS  (ON)

 (

)

4

5

6

7

10

8

9

V

GS

=10V

V

GS

=4V

0.3

0.05

0.5

1

1

5

10

I

D

  (A)

Re  (yfs) (S)

5

10

0.5

0.1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

–40

0

0

50

100

150

0.3

0.4

0.5

0.6

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.2

0.1

(I

D

=2.5A)

V

GS

=10V

V

GS

=4V

0

10

20

30

40

50

50

500

2000

V

DS

  (V)

Capacitance  (pF)

1000

10

100

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

1.0

1.5

I

DR

  (A)

V

SD

  (V)

0.5

8

6

0

4

2

10

4V

10V

V

GS

=0V

0.5

0.1

1

5

10

50

100

1

5

20

I

D

  (A)

V

DS

  (V)

0.5

10

(T

C

=25

°

C)

1ms

10

ms  (1shot)

100

µ

s

LIM

ITED

R

DS  (ON)

I

D

  (pulse)  max

25

30

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

W

ith Infinite Heatsink

Without Heatsink

N-channel

With built-in flywheel diode

External dimensions

B

 • • • 

SMA

Equivalent circuit diagram

Absolute maximum ratings

Diode for flyback voltage absorption (1 circuit)

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

135

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SMA5106

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

10V

I

DSS

250

µ

A

V

DS

=100V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

1.1

1.7

S

V

DS

=10V, I

D

=4A

0.47

0.55

V

GS

=10V, I

D

=2A

0.60

0.78

V

GS

=4V, I

D

=2A

Ciss

230

pF

V

DS

=25V, f=1.0MHz,

Coss

60

pF

V

GS

=0V

t

on

60

ns

I

D

=4A, V

DD

50V, V

GS

=10V,

t

off

50

ns

 see Fig. 3 on page 16.

V

SD

1.2

2.0

V

I

SD

=4A, V

GS

=0V

t

rr

250

ns

I

SD

=

±

100mA

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

100

V

V

GSS

±

10

V

I

D

±

4

A

I

D(

pulse

)

±

8 (

PW

1ms

)

A

E

AS

*

16

mJ

I

F

4 (

PW

0.5ms, Du

25%

)

A

I

FSM

8 (

PW

10ms, Single pulse

)

A

V

R

120

V

4 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

28 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j–a

31.2 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j–c

4.46 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=1mH, I

D

=5A, unclamped, see Fig. E on page 15.

P

T

Specification

min

typ

max

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.0

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

Specification

min

typ

max

R

DS(ON)

1

2

5

4

6

3

8

9

12

11

10

7

0

2

10

8

7

6

0

V

DS

  (V)

I

D

  (A)

4

6

8

5

4

3

2

1

V

GS

=3V

4V

4.5V

3.5V

10V

0

0

1

2

3

0.2

0.4

0.6

0.8

I

D

  (A)

R

DS  (ON)

 (

)

4

5

6

7

8

V

GS

=10V

V

GS

=4V

0.3

0.05

0.5

1

1

5

7

I

D

  (A)

Re  (yfs) (S)

5

8

0.5

0.1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

–40

0

0

50

100

150

0.6

0.8

1.0

1.2

R

DS  (ON)

 (

)

T

C

  (

°

C)

0.4

0.2

(I

D

=2A)

V

GS

=10V

V

GS

=4V

0

10

20

30

40

50

5

50

100

700

V

DS

  (V)

Capacitance  (pF)

500

10

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

1.0

1.5

I

DR

  (A)

V

SD

  (V)

0.5

8

7

6

0

5

4

3

2

1

4V

10V

V

GS

=0V

0.5

0.1

1

5

10

50

100

1

5

10

I

D

  (A)

V

DS

  (V)

0.5

(T

C

=25

°

C)

1ms

10

m

s  (1shot)

100

µ

s

LIMITED

R

D

S

  (O

N

)

I

D  

(pulse) max

25

30

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

N-channel

With built-in flywheel diode

External dimensions

B

 • • • 

SMA

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

Diode for flyback voltage absorption

0

2

4

6

8

I

D

  (A)

V

GS

  (V)

8

7

6

0

5

4

3

2

1

(V

DS

=10V)

25

°

C

125

°

C

T

C

=–40

°

C

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

136

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SMA5112

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

250

V

V

GSS

±

20

V

I

D

±

7

A

I

D(

pulse

)

±

15 (

PW

1ms, Du

1%

)

A

E

AS

*

55

mJ

4 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

35 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j-a

31.2 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j-c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=25V, L=2.0mH, I

D

=7A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(

BR)DSS

250

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=250V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=1mA

Re

(

yfs

)

2.5

5.0

S

V

DS

=10V, I

D

=3.5A

R

DS(ON)

0.4

0.5

V

GS

=10V, I

D

=3.5A

Ciss

450

pF

V

DS

=10V, f=1.0MHz,

Coss

280

pF

V

GS

=0V

td

(

on

)

20

ns

I

D

=3.5A,

t

r

30

ns

V

DD

100V,

td

(off)

55

ns

R

L

=28.6

, V

GS

=10V,

t

f

75

ns

 

see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=7A, V

GS

=0V

t

rr

600

ns

I

SD

=

±

100mA

Specification

min

typ

max

2

3

4

8

7

5

6

9

10

12

11

1

0

2

4

6

8

0

3

2

1

4

5

7

6

10

V

DS

  (V)

I

D

  (A)

6V

5.5V

5V

4.5V

V

GS

=4V

10V

0

2

4

6

0

3

4

5

2

1

6

7

8

V

GS

  (V)

I

D

  (A)

(V

DS

=10V)

1

2

5

°

C

T

C

=

40

°

C

2

5

°

C

0

4

3

2

1

5

0

0.3

0.2

0.1

0.4

0.5

6

I

D

  (A)

R

DS  (ON)

 (

)

7

(V

GS

=10V)

0.05

0.5

0.1

0.3

1

0.5

5

10

I

D

  (A)

Re  (yfs) (S)

7

5

1

(V

DS

=10V)

T

C

=–

40

°

C

25

°

C

125

°

C

–40

0

1.0

0.8

0.4

0.6

0.2

T

C

  (

°

C)

R

DS  (ON)

 (

)

150

100

50

0

I

D

=3.5A

V

GS

=10V

0

20

10

30

10

5

2

100

50

500

1000

2000

40

50

V

DS

  (V)

Capacitance  (pF)

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

0

0.5

1.0

1.5

0

4

3

2

1

5

6

7

V

SD

  (V)

I

DR

  (A)

V

GS

=0V

5.10V

10

5

3

500

100

50

0.1

0.05

1

0.5

5

10

20

V

DS

  (V)

I

D

  (A)

1m

s

10

m

s  (1sh

ot)

10

0

µ

s

R

DS (ON)  

LIMITED

I

D

  (pulse)  max

(T

C

=25

°

C)

25

30

35

40

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

W

ith Infinite Heatsink

Without Heatsink

N-channel

3-phase DC motor 100V AC direct drive

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

137

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.0

1.2

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

SMA5114

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

20

V

I

D

±

3

A

I

D(

pulse

)

±

6 (

PW

1ms, Du

1%

)

A

E

AS

*

6.8

mJ

I

AS

3

A

4 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

28 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j–a

31.2 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j–c

4.46 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=20V, L=1mH, I

L

=3A, unclamped, see Fig. E on page 15.

P

T

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

10

µ

A

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

V

TH

1.0

2.5

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

1.0

2.3

S

V

DS

=10V, I

D

=1.0A

0.20

0.25

V

GS

=10V, I

D

=1.0A

0.25

0.30

V

GS

=4V, I

D

=1.0A

Ciss

170

pF

V

DS

=10V,

Coss

130

pF

f=1.0MHz,

Crss

20

pF

V

GS

=0V

td

(

on

)

80

ns

I

D

=1A,

t

r

170

ns

V

DD

30V,

td

(off)

330

ns

R

L

=30

, V

GS

=5V,

t

f

150

ns

 

see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=3A, V

GS

=0V

t

rr

80

ns

I

SD

=

±

100mA

Specification

min

typ

max

R

DS(ON)

Specification

min

typ

max

11

10

12

8

5

1

9

4

3

2

7

6

0

2

4

6

8

0

3

2

1

10

V

DS

  (V)

I

D

  (A)

3.4V

3.2V

3V

V

GS

=2.8V

10V

0

1

2

0

1

2

3

3

V

GS

  (V)

I

D

  (A)

4

5

(V

DS

=10V)

T

C

=

40

°

C

25

°

C

125

°

C

0

1

0

0.2

0.1

0.3

0.4

0.5

I

D

  (A)

R

DS  (ON)

 (

)

2

3

V

GS

=4V

10V

0.05

0.1

0.5

0.2

1

0.5

5

10

1

I

D

  (A)

Re  (yfs) (S)

3

(V

DS

=10V)

T

C

=–40

°

C

125

°

C

25

°

C

–40

0

0

0.2

0.1

0.3

0.4

0.5

50

T

C

  (

°

C)

R

DS  (ON)

 (

)

100

150

(I

D

=1A)

V

GS

=4V

10V

0

20

10

30

1

10

5

50

100

500

40

50

V

DS

  (V)

Capacitance  (pF)

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

0

0.5

1.0

1.5

0

1

2

3

V

SD

  (V)

I

DR

  (A)

V

G

S

=0V

5V

1

0.5

5

50

10

0.1

0.05

1

0.5

5

10

100

V

DS

  (V)

I

D

  (A)

10

m

s  (1

sh

ot)

1m

s

10

0

µ

s

R

DS (ON) 

LIMITED

I

D

  (pulse)  max

(T

C

=25

°

C)

25

30

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

N-channel

With built-in flywheel diode

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

B

 • • • 

SMA

Electrical characteristics

Diode for flyback voltage absorption

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

138

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SMA5117

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

250

V

V

GSS

±

20

V

I

D

±

7

A

I

D(

pulse

)

±

15 (

PW

1ms, Du

1%

)

A

E

AS

*

120

mJ

4 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

35 (

Tc=25

°

C, with all circuits operating, with infinite heatsink

)

W

θ

j–a

31.2 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j–c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

Tch

150

°

C

Tstg

–40 to +150

°

C

* : V

DD

=25V, L=4.4mH, I

D

=7A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

250

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=250V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=1mA

Re

(

yfs

)

4.5

6.5

S

V

DS

=10V, I

D

=3.5A

R

DS(ON)

0.2

0.25

V

GS

=10V, I

D

=3.5A

Ciss

850

pF

V

DS

=10V,

Coss

550

pF

f=1.0MHz,

Crss

250

pF

V

GS

=0V

td

(

on

)

20

ns

I

D

=3.5A,

t

r

25

ns

V

DD

100V,

td

(off)

90

ns

R

L

=28.6

, V

GS

=10V,

t

f

70

ns

 

see Fig. 3 on page 16.

V

SD

1.1

1.5

V

I

SD

=7A, V

GS

=0V

t

rr

85

ns

I

SD

=3.5A, V

GS

=0V, di/dt=100A/

µ

s

Specification

min

typ

max

2

3

4

8

7

5

6

9

10

12

11

1

0

2

4

0

3

2

1a

4

5

6

7

6

V

DS

  (V)

I

D

  (A)

8

10

5.5V

5V

4.5V

V

GS

=4V

10V

6V

0

2

4

0

3

2

1

4

7

6

5

6

8

V

GS

  (V)

I

D

  (A)

(V

DS

=10V)

T

C

=–40

°

C

125

°

C

25

°

C

0

0

0.15

0.1

0.05

0.2

0.25

0.3

I

D

  (A)

R

DS  (ON)

 (

)

5

6

7

4

1

2

3

(V

GS

=10V)

0.05

0.5

0.1

0.3

1

0.5

10

5

20

I

D

  (A)

Re  (yfs) (S)

1

7

5

(V

DS

=10V)

125

°

C

25

°

C

Tc=

–40

°

C

–40

0

0

0.2

0.1

0.3

0.4

0.5

T

C

  (

°

C)

R

DS  (ON)

 (

)

100

50

150

I

D

=3.5A

V

GS

=10V

0

20

10

30

10

100

50

500

1000

3000

40

50

V

DS

  (V)

Capacitance  (pF)

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

0

0.5

1.0

1.5

0

3

1

2

4

5

6

7

V

SD

  (V)

I

DR

  (A)

(V

GS

=0V)

1

0.5

10

5

100

50

0.1

0.05

0.01

1

0.5

5

10

30

500

V

DS

  (V)

I

D

  (A)

10m

s  (1shot)

1ms

10

0

µ

s

R

DS  (ON)  

LIMITED

I

D

  (pulse)  max

(T

C

=25

°

C)

25

30

35

40

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

N-channel

3-phase DC motor 100V AC direct drive

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

139

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

Safe Operating Area (SOA)

P

T

-T

a

 Characteristics

Characteristic curves

SMA5118

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

500

V

V

GSS

±

30

V

I

D

±

5

A

I

D(

pulse

)

±

10 (

PW

1ms, Du

1%

)

A

E

AS

*

45

mJ

4 (

Ta=25

°

C, with all circuits operating, without heatsink

)

W

35 (

Tc=25

°

C,with all circuits operating, with infinite heatsink

)

W

θ

j–a

31.2 (

Junction-Air, Ta=25

°

C, with all circuits operating

)

°

C/W

θ

j–c

3.57 (

Junction-Case, Tc=25

°

C, with all circuits operating

)

°

C/W

Tch

150

°

C

Tstg

–40 to +150

°

C

* : V

DD

=30V, L=3.4mH, I

D

=5A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

500

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

30V

I

DSS

100

µ

A

V

DS

=500V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=1mA

Re

(

yfs

)

2.4

4.0

S

V

DS

=10V, I

D

=2.5A

R

DS(ON)

1.05

1.4

V

GS

=10V, I

D

=2.5A

Ciss

770

pF

V

DS

=10V,

Coss

290

pF

f=1.0MHz, V

GS

=0V

td

(

on

)

20

ns

I

D

=2.5A,

t

r

25

ns

V

DD

200V,

td

(off)

70

ns

R

L

=80

, V

GS

=10V,

t

f

65

ns

 

see Fig. 3 on page 16.

V

SD

1.1

1.5

V

I

SD

=5A, V

GS

=0V

t

rr

75

ns

I

SD

=2.5A, di/dt=100A/

µ

s

Specification

min

typ

max

N-channel

3-phase DC motor 200V AC direct drive

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

2

3

4

8

7

5

6

9

10

12

11

1

0

5

10

15

1

0

2

3

4

5

20

V

DS  

(V)

I

D  

(A)

V

GS

=3.5V

4V

4.5V

5

V

1

0

V

0

2

4

0

5

4

3

2

1

6

V

GS  

(V)

I

D  

(A)

(V

DS

=20V)

T

C

=125

°

C

25

°

C

–40

°

C

0

2

1

3

4

0

1.0

0.5

1.5

2.0

5

I

D  

(A)

R

DS  (ON) 

(

)

(V

GS

=10V)

0.05

1

0.1

0.5

0.2

0.5

1

5

10

I

D  

(A)

Re  (yfs) (S)

5

(V

DS

=20V)

12

5

°

C

25

°

C

T

a

=–

40

°

C

–40

0

0

3.0

2.5

2.0

1.5

1.0

0.5

T

C  

(

°

C)

R

DS  (ON) 

(

)

100

50

150

I

D

=2.5A

V

GS

=10V

0

10

20

30

40

50

10

500

100

50

2000

1000

V

DS  

(V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

Ciss

Coss

Crss

0

0.5

1.0

1.5

0

3

2

1

5

4

V

SD  

(V)

I

DR  

(A)

(T

a

=25

°

C)

3

5

10

50

100

600

0.05

0.1

1

0.5

20

10

5

I

D  

(A)

V

DS  

(V)

1m

s

R

D

S (O

N

)

  LIM

ITED      

100

µ

s

I

(pulse) max

(T

C

=25

°

C)

25

30

35

40

20

15

10

5

0

Without Heatsink

With Infinite Heatsink

With Silicon Grease
Natural Cooling
All Circuits Operating

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

140

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

SMA5125

2

4

3

8

6

5

7

9

11

12

10

1

Pch

Nch

(T

a

=25

°

C)

Symbol

Unit

V

DSS

60

–60

V

V

GSS

±

20

±

20

V

I

D

10

–10

A

I

D(pulse)

15 (PW

1ms, duty

25%)

–15 (PW

1ms, duty

25%)

A

4 (Ta=25

°

C, with all circuits operating, without heatsink)

W

30 (Tc=25

°

C,with all circuits operating, with infinite heatsink)

W

θ

j-a

31.25 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

4.166 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

Ratings

N channel

P channel

N-channel + P-channel

3-phase motor drive

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

0

2

4

6

8

10

V

DS  

(V)

2

4

6

8

10

12

14

15

0

I

D  

(A)

3.0V

3.3V

3.5V

10V

4.0V

V

GS

=2.7V

(T

a

=25

°

C)

0

1

3

2

5

I

D  

(A)

V

GS  

(V)

2

4

6

8

10

12

14

15

0

4

(V

DS

=10V)

T

c

=125

°

C

25

°

C

–40

°

C

0

0.04

0.08

0.12

0.16

0.20

0

2

4

6

8

10

12

14 15

I

D  

(A)

R

DS  (ON) 

(

)

T

a

=25

°

C

V

GS

=4V

–40

0

50

0

100

150

0.04

0.08

0.12

0.16

0.20

T

C  

(

°

C)

R

DS  (ON) 

(

)

I

D

=5A

V

GS

=4V

–14

–15

–10

–12

–8

–2

–4

–6

0

0

–2

–4

–6

–8

–10

V

DS  

(V)

I

D  

(A)

V

GS

=–2.7V

–3.0V

–3.3V

–3.5V

–4.0V

1

0

V

(T

a

=25

°

C)

0

–2

–4

–6

–8

–10

–12

–14

–15

0

–1

–3

–2

–5

I

D  

(A)

V

GS  

(V)

–4

25

°

C

–40

°

C

T

c

=40

°

C

(V

DS

=–10V)

0

0.04

0.08

0.12

0.16

0.20

0

–2

–4

–6

–8

–10

–12

–14 –15

I

D  

(A)

R

DS  (ON) 

(

)

T

a

=25

°

C

V

GS

=–10V

–40

0

50

0

100

150

0.04

0.08

0.12

0.16

0.20

T

C  

(

°

C)

R

DS  (ON) 

(

)

I

D

=–5A

V

GS

=–10V

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

141

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

0.0

0.5

1.0

1.5

I

DR  

(A)

V

SD  

(V)

6

8

10

12

14

15

2

4

0

(T

a

=25

°

C)

V

GS

=10V

4V

0V

0.1

0.1

0.05

1

10

1

10

20

I

D  

(A)

Re  (yfs) (S)

20

25

°

C

T

c

=40

°

C

125

°

C

(V

DS

=10V)

0

10

20

30

40

50

V

DS  

(V)

1000

5000

Capacitance  (pF)

100

10

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

Ciss

Coss

Crss

Single Pulse
T

c

=25

°

C

100

10

1

0.1

20

10

1

0.1

I

D  

(A)

V

DS  

(V)

R

D

S

 (

O

N

LIM

IT

E

D

100

µ

s

1ms

10ms

30

35

40

20

25

15

10

5

0

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

Without Heatsink

W

ith In

finite H

ea

tsin

k

All Circuits Operating

0.0

–0.5

–1.0

–1.5

I

DR  

(A)

V

SD  

(V)

–6

–8

–10

–12

–14

–15

–2

0

–4

(T

a

=25

°

C)

V

GS

=–

10V

–4V

0

V

0.1

–0.05 –0.1

–1

–10

1

10

20

I

D  

(A)

Re  (yfs) (S)

–20

(V

DS

=–10V)

25

°

C

T

c

=–40

°

C

125

°

C

0

–10

–20

–30

–40

–50

V

DS  

(V)

1000

5000

Capacitance  (pF)

100

10

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

Ciss

Coss

Crss

–100

–10

–1

–0.1

–20

–10

–1

–0.1

I

D  

(A)

V

DS  

(V)

R

D

S

 (

O

N

)  

LIMITED

100

µ

s

1m

s

10ms

Single Pulse
T

c

=25

°

C

SMA5125

Electrical characteristics

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

–60

V

I

D

=–100

µ

A, V

GS

=0V

I

GSS

±

10

µ

A

V

GS

=

±

20V

±

10

µ

A

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

–100

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

–1.0

–2.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

8.0

S

V

DS

=10V, I

D

=5A

8.7

S

V

DS

=–10V, I

D

=–5A

R

DS(ON)

0.14

V

GS

=4V, I

D

=5A

0.14

V

GS

=–10V, I

D

=–5A

Ciss

460

pF

V

DS

=10V,

1200

pF

V

DS

=–10V,

Coss

225

pF

f=1.0MHz,

440

pF

f=1.0MHz,

Crss

50

pF

V

GS

=0V

120

pF

V

GS

=0V

td 

(on)

25

ns

I

D

=5A, V

DD

20V,

50

ns

I

D

=–5A, V

DD

–20V,

t

r

110

ns

R

L

=4

, V

GS

=5V,

170

ns

R

L

=4

, V

GS

=–5V,

td 

(off)

90

ns

R

G

=50

,

180

ns

R

G

=50

,

t

f

55

ns

see Fig.3 on page 16.

100

ns

see Fig.4 on page 16.

V

SD

1.15

ns

I

SD

=10A, V

GS

=0V

–1.25

V

I

SD

=–10A, V

GS

=0V

t

rr

75

V

I

SD

=5A, di/dt=100A/

µ

s

100

ns

I

SD

=–5A, di/dt=100A/

µ

s

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142

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS

 Characteristics (Typical)

R

DS(ON)

-I

Characteristics (Typical)

R

DS(ON)

-T

Characteristics (Typical)

Characteristic curves

SMA5127

(T

a

=25

°

C)

Symbol

Unit

V

DSS

60

–60

V

V

GSS

±

20

20

V

I

D

4

–4

A

I

D(pulse)

8 (PW

1ms, Duty

1%)

–8 (PW

1ms, Duty

1%)

A

4 (Ta=25

°

C, with all circuits operating, without heatsink)

W

28 (Tc=25

°

C,with all circuits operating, with infinite heatsink)

W

θ

j-a

31.25 (Junction-Air, Ta=25

°

C, with all circuits operating)

°

C/W

θ

j-c

4.46 (Junction-Case, Tc=25

°

C, with all circuits operating)

°

C/W

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

Ratings

N channel

P channel

N-channel + P-channel

3-phase motor drive

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

2

4

3

8

6

5

7

9

11

12

10

1

Pch

Nch

8

6

2

4

0

0

2

4

6

8

10

V

DS  

(V)

I

D  

(A)

3.5V

4.0V

4.5V

10V

V

GS

=3.0V

(T

a

=25

°

C)

0

–10

–8

–6

V

DS  

(V)

I

D  

(A)

–2

–6

–4

–8

–2

0

–4

–3.2V

–3.6V

–4.0V

–4.5V

10V

V

GS

=

–2.7V

(T

a

=25

°

C)

0.5

0.6

0.4

0.3

0.2

0.1

0

0

2

1

6

7

5

4

3

8

I

D  

(A)

R

DS  (ON) 

(

)

(T

a

=25

°

C)

V

GS

=4V

10V

0

0

–2

0.2

0.4

0.5

0.6

I

D  

(A)

R

DS  (ON) 

(

)

–4

–6

–8

0.3

0.1

(T

a

=25

°

C)

V

GS

=

–4V

–10V

–40

0.2

–25

50

25

0

100

125

75

150

0.4

0.3

0.6

0.5

0.8

0.7

T

a  

(

°

C)

I

D

=2A

V

GS

=4V

R

DS  (ON) 

(

)

I

D  

(A)

V

GS  

(V)

0

–7

–2

–1

–3

–4

–5

–6

–8

–6

0

–2

–4

(V

DS

=–10V)

T

c

=

–40

°

C

25

°

C

125

°

C

I

D  

(A)

V

GS  

(V)

0

6

7

3

2

1

4

5

0

1

2

3

4

5

6

7

8

(V

DS

=10V)

25

°

C

125

°

C

T

a

=–40

°

C

–40

0.2

0

0.4

0.6

0.7

0.8

T

a  

(

°

C)

R

DS  (ON) 

(

)

50

100

150

–25

25

75

125

0.5

0.3

I

D

=–2A

V

GS

=–10V

Allegro_Power_Transistor_array_MOSFET_array-html.html
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143

N-ch

P-ch

N-ch

N-ch

P-ch

P-ch

N-ch

P-ch

Re

(yfs)

-I

Characteristics (Typical)

Safe Operating Area (SOA)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Characteristic curves

SMA5127

Electrical characteristics

(T

a

=25

°

C)

N channel

P channel

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

–60

V

I

D

=–100

µ

A, V

GS

=0V

I

GSS

±

10

µ

A

V

GS

=

±

20V

10

µ

A

V

GS

= 20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

–100

µ

A

V

DS

=–60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

–1.0

–2.0

V

V

DS

=–10V, I

D

=–250

µ

A

Re

(yfs)

2.5

S

V

DS

=10V, I

D

=2A

3

S

V

DS

=–10V, I

D

=–2A

R

DS(ON)

0.55

V

GS

=4V, I

D

=2A

0.55

V

GS

=–10V, I

D

=–2A

Ciss

150

pF

V

DS

=10V

320

pF

V

DS

=–10V,

Coss

70

pF

f=1.0MHz

130

pF

f=1.0MHz,

Crss

15

pF

V

GS

=0V

40

pF

V

GS

=0V

td 

(on)

12

ns

I

D

=2A, V

DD

20V,

20

ns

I

D

=–2A, V

DD

–20V,

t

r

40

ns

R

L

=10

, V

GS

=5V,

95

ns

R

L

=10

, V

GS

=–5V,

td 

(off)

40

ns

70

ns

t

f

25

ns

see Fig.3 on page 16.

60

ns

see Fig.4 on page 16.

V

SD

1.2

V

I

SD

=4A, V

GS

=0V

–1.1

V

I

SD

=–4A, V

GS

=0V

t

rr

75

ns

I

SD

=2A, V

GS

=0V,

75

ns

I

SD

=–2A, V

GS

=0V,

di/dt=100A/

µ

s

di/dt=100A/

µ

s

0.1

0.1

1

5

I

D  

(A)

Re  (yfs) (S)

1

8

0.01

25

°

C

125

°

C

T

c

=–40

°

C

(V

DS

=10V)

1

0.1

10

100

1

10

I

D  

(A)

V

DS  

(V)

100

µ

s

1ms

R

DS (on) 

LIMITED

10ms

(Tc=25

°

C)

25

30

20

15

10

5

0

Without Heatsink

W

ith Infinite Heatsink

0

50

100

150

T

a  

(

°

C)

P

T  

(W)

With Silicon Grease
Natural Cooling
All Circuits Operating

–20

V

DS  

(V)

V

GS  

(V)

–2

–5

–4

–3

0

–2

–1

–10

(Ta=25

°

C)

2

10

20

1

0

4

5

V

DS  

(V)

V

GS  

(V)

2

3

I

D

=4A

2A

(T

a

=25

°

C)

–1

–0.1

–10

–100

–1

–10

I

D  

(A)

V

DS  

(V)

100

µ

s

1ms

10ms

R

DS (ON) 

LIMITED

(Tc=25

°

C)

0.1

–0.05

–0.1

–1

1

5

I

D  

(A)

Re  (yfs) (S)

–8

(V

DS

=–10V)

T

a

=–40

°

C

25

°

C

125

°

C

0

–10

–20

–30

–40

–50

10

5

100

1000

V

DS  

(V)

Capacitance  (pF)

V

GS

=80V

f=1MHz

(T

a

=25

°

C)

Ciss

Coss

Crss

0

10

20

30

40

50

5

100

1000

V

DS  

(V)

Capacitance  (pF)

10

Ciss

Coss

Crss

V

GS

=0V

f=1MHz

(T

a

=25

°

C)

NPN

PNP

V

DS

-V

GS

 Characteristics (Typical)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

144

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

SMA6010

R

3

R

4

2

8

9

1

3

4

R

1

7

6

10

11

5

12

R

2

R

1

: 3k

Ω 

typ  R

2

: 200

Ω 

typ  R

3

: 2k

Ω 

typ  R

4

: 150

Ω 

typ

(T

a

=25

°

C)

Symbol

Unit

V

CBO

60

–60

V

V

CEO

60

–60

V

V

EBO

6

–6

V

I

C

4

–4

A

I

CP

6 (PW

1ms, D

u

50%)

–6 (PW

1ms, D

u

50%)

A

I

B

0.5

–0.5

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j–c

 6.25

°

C/W

P

T

W

Ratings

NPN

PNP

6

4

2

0

0

2

4

6

I

C

  (A)

V

CE

  (V)

I

B

=4.0mA

2.0mA

1.2mA

0.8mA

0.6mA

0.5mA

0.4mA

20000

0.03

(V

CE

=4V)

h

FE

I

C

  (A)

10000

5000

1000

500

100

50

0.05 0.1

0.5

1

5 6

typ

20000

0.03

(V

CE

=4V)

h

FE

I

C

  (A)

10000

5000

1000

500

100

50

0.05 0.1

0.5

1

5 6

T

a

=125

°

C

–30

°

C

25

°

C

75

°

C

6

0

0

I

C

  (A)

V

BE 

  (V)

5

4

3

2

1

1

2

3

30

°

C

(V

CE

=4V)

Ta=125

°

C

75

°

C

25

°

C

–6

–4

–2

0

0

–2

–4

–6

I

C

  (A)

V

CE

  (V)

–1.8mA

–1.5mA

–1.2mA

–1.0mA
–0.9mA

–0.8mA

I

B

=–2.2mA

20000

–0.03

(V

CE

=–4V)

h

FE

I

C

  (A)

10000

5000

1000

500

100

50

–0.05 –0.1

–0.5

–1

–5 –6

typ

20000

–0.03

(V

CE

=–4V)

h

FE

I

C

  (A)

10000

5000

1000

500

100

50

–0.05 –0.1

–0.5

–1

–5 –6

T

a

=125

°

C

–30

°

C

75

°

C

25

°

C

–6

0

0

 

I

C

  (A)

V

BE

  (V)

–5

–4

–3

–2

–1

–1

–2

–3

30

°

C

(V

CE

=–4V)

75

°

C

25

°

C

T

a

=125

°

C

PNP + NPN Darlington

3-phase motor drive

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

145

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

Safe Operating Area (SOA)

Characteristic curves

SMA6010

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=60V

–10

µ

A

V

CB

=–60V

I

EBO

10

mA

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

60

V

I

C

=10mA

–60

V

I

C

=–20mA

h

FE

2000

5000

12000

V

CE

=4V, I

C

=3A

2000

5000

12000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

1.5

V

–1.5

V

V

BE

(sat)

2.0

V

–2.0

V

V

FEC

1.8

V

I

FEC

=1A

–1.8

V

I

FEC

=–1A

t

on

1.0

µ

s

V

CC

30V,

0.4

µ

s

V

CC

–30V,

t

stg

4.0

µ

s

I

C

=3A,

0.8

µ

s

I

C

=–3A,

t

f

1.5

µ

s

I

B1

=–I

B2

=10mA

0.6

µ

s

I

B1

=–I

B2

=–10mA

f

T

75

MHz

V

CE

=12V, I

E

=–0.1A

200

MHz

V

CE

=–12V, I

E

=0.2A

C

ob

50

pF

V

CB

=10V, f=1MHz

75

pF

V

CB

=–10V, f=1MHz

I

C

=3A, I

B

=6mA

I

C

=–3A, I

B

=–6mA

3

0.2

 

V

CE

  (sat) (V)

I

B

  (mA)

2

1

0

0.5

1

5

10

50 100 200

I

C

=4A

I

C

=1A

I

C

=2A

3

0.5

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

2

1

0

1

5

6

T

a

=125

°

C

75

°

C

2

5

°

C

–30

°

C

10

3

 

I

C

  (A)

V

CE

  (V)

5

1

0.5

0.1

0.05

0.03

5

10

50

100

Single Pulse
Without Heatsink
T

a

=25

°

C

1m

s

10

m

s

–3

–0.3

V

CE

  (sat) (V)

I

B

  (mA)

–2

–1

0

–0.5 –1

–5

–10

–50 –100 –200

I

C

=–4A

I

C

=–2A

I

C

=–1A

–3

–0.5

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

–2

–1

0

–1

–5 –6

125

°

C

25

°

C

75

°

C

T

a

=–30

°

C

–10

–3

I

C

  (A)

–5

–1

–0.5

–0.1

–0.05

–0.03

–5

–10

–50

–100

Single Pulse
Without Heatsink
T

a

=25

°

C

1ms

10m

s

V

CE

  (V)

20

10

5

1

0.5

1

5

10

50 100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

20

15

10

5

0
–40

0

50

100

150

P

T

  (W)

T

a

  (

°

C)

With Infinite Heatsink

Without Heatsink

Electrical characteristics

P

T

-T

a

 Characteristics

θ

j-a

-PW Characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
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146

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

SMA6014

R

1

: 4k

Ω 

typ  R

2

: 100

Ω 

typ  R

3

: 3k

Ω 

typ

2

R

1

R

2

4

R

3

8

6

9

11

10

1

3

7

5

12

(T

a

=25

°

C)

Symbol

Unit

V

CBO

60

–60

V

V

CEO

60

–60

V

V

EBO

6

–6

V

I

C

2

–2

A

I

CP

3 (PW

1ms, D

u

50%)

–3 (PW

1ms, D

u

50%)

A

I

B

0.5

–0.5

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j–c

 6.25

°

C/W

P

T

W

Ratings

NPN

PNP

6

4

2

0

0

2

4

6

I

B

=4.0mA

1.0mA

0.6mA

0.4mA

0.3mA

2.0m

A

I

C

  (A)

V

CE

  (V)

0.03 0.05

0.1

0.5

1

3

100

500

1000

5000

20000

10000

(V

CE

=4V)

 I

C

  (A)

h

FE

typ

0.03 0.05

0.1

0.5

1

3

100

500

1000

5000

10000

20000

(V

CE

=4V)

I

C

  (A)

h

FE

T

a

=125

°

C

75

°

C

25

°

C

–3

0

°

C

3

2

1

0

0

1

2

(V

CE

=4V)

V

BE

  (V)

I

C

  (A)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

0

0

–1

–2

–4

–3

–1

–2

–3

V

CE

  (V)

I

C

  (A)

–5

–4

–6

I

B

=

1

0

.0

m

A

–5.0m

A

–2.0mA

–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.5mA

–0.4mA

–0.3mA

–0.02

–0.05

–0.1

–0.5

–1

–3

50

100

500

1000

5000

 I

C

  (A)

 

h

FE

(V

CE

=–4V)

typ

–0.02

–0.05

–0.1

–0.5

–1

–3

50

100

500

1000

5000

10000

(V

CE

=–4V)

I

C

  (A)

h

FE

Ta=125

°

C

–30

°

C

25

°

C

75

°

C

–3

–2

–1

0

0

–1

–2

–3

(V

CE

=–4V)

V

BE

  (V)

I

C

  (A)

T

a

=

125

°

C

75

°

C

25

°

C

30

°

C

PNP + NPN Darlington

3-phase motor drive

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

147

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

Safe Operating Area (SOA)

Characteristic curves

SMA6014

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=60V

–10

µ

A

V

CB

=–60V

I

EBO

10

µ

A

V

EB

=6V

–5

mA

V

EB

=–6V

V

CEO

60

V

I

C

=10mA

–60

V

I

C

=–10mA

h

FE

1500

4000

10000

V

CE

=4V, I

C

=1A

2000

4000

10000

V

CE

=–4V, I

C

=–1A

V

CE

(sat)

1.5

V

–1.5

V

V

BE

(sat)

2.2

V

–2.2

V

V

FEC

V

–1.8

V

I

FEC

=–1A

t

rr

µ

s

3.0

µ

s

I

FEC

=

±

100mA

t

on

0.7

µ

s

V

CC

30V,

0.4

µ

s

V

CC

–30V,

t

stg

5.0

µ

s

I

C

=1A,

1.0

µ

s

I

C

=–1A,

t

f

3.0

µ

s

I

B1

=–I

B2

=2mA

0.4

µ

s

I

B1

=–I

B2

=–2mA

f

T

20

MHz

V

CE

=12V, I

E

=–1A

100

MHz

V

CE

=–12V, I

E

=0.1A

C

ob

45

pF

V

CB

=10V, f=1MHz

30

pF

V

CB

=–10V, f=1MHz

I

C

=1A, I

B

=2mA

I

C

=–1A, I

B

=–2mA

2

1

0

0.1

0.5

1

5

10

I

C

=2A

I

C

=1A

V

CE

  (sat) (V)

I

B

  (mA)

2

1

0

0.5

1

3

(I

C

 / I

B

=1000)

I

C

  (A)

V

CE

  (sat) (V)

25

°

C

T

a

=125

°

C

–30

°

C

75

°

C

5

1

0.5

0.1

0.05

0.03

3

5

10

50

100

V

CE

  (V)

I

C

  (A)

1

0

m

s

100

µ

s

1ms

Single Pulse
Without Heatsink
T

a

=25

°

C

20

10

5

1

0.5

1

5

10

50 100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

20

15

10

5

0
–40

0

50

100

150

P

T

  (W)

T

a

  (

°

C)

With Infinite Heatsink

Without Heatsink

–3

–2

–1

0

–0.1

–0.5

–1

–3

V

CE

  (sat) (V)

I

B

  (mA)

(I

C

=–1A)

Ta=125

°

C

75

°

C

25

°

C

30

°

C

–3

–2

–1

0

–0.2

–0.5

–1

–3

V

CE

  (sat) (V)

I

C

  (A)

(I

C

 / I

B

=1000)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

–5

–1

–0.5

–0.1

–0.05

–0.03

–3

–5

–10

–50

–100

V

CE

  (V)

I

C

  (A)

10

m

s

100

µ

s

1ms

Single Pulse
Without Heatsink
T

a

=25

°

C

PW  (mS)

0.5

100

1000

500

50

10

5

1

5

0.5

1

10

20

θ

j–

a

  (

°

C / W)

0.2

Electrical characteristics

P

T

-T

a

 Characteristics

θ

j-a

-PW Characteristics

PNP

NPN

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

148

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

(T

a

=25

°

C)

Symbol

Unit

V

CBO

100

±

15

–60

V

V

CEO

100

±

15

–60

V

V

EBO

6

–6

V

I

CP

1.5

–3

A

I

B

0.5

–0.5

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

–40 to +150

°

C

Ratings

NPN

PNP

SMA6511

R

1

: 4k

Ω 

typ  R

2

: 150

Ω 

typ  R

3

: 4k

Ω 

typ  R

4

: 100

Ω 

typ

8

9

6

7

3

4

1

2

5

10

12

11

R

3

R

1

R

2

R

4

P

T

W

I

C

  (A)

0

1

2

4

5

6

V

CE

  (V)

3

1

2

3

0.5mA

1mA

2mA

5mA

0.3mA

0.2mA

20000

10000

5000

1000

500

100

0.03

I

C

  (A)

h

FE

50

0.1

0.5

1

3

0.05

typ

(V

CE

=4V)

(V

CE

=4V)

0.03

I

C

  (A)

0.1

0.5

1

3

0.05

20000

10000

5000

1000

500

100

50

h

FE

T

a

=125

°

C

–30

°

C

75

°

C

25

°

C

I

C

  (A)

0

1

2

3

V

BE

  (V)

1

2

3

(V

CE

=4V)

0

T

a

=125

°

C

3

0

°

C

75

°

C

25

°

C

0

0

–1

–2

–3

–1

–2

–3

V

CE

  (V)

I

C

  (A)

–5

–4

–6

I

B

=

10.0mA –

5.0m

A

–2.0m

A

–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.5mA

–0.4mA

–0.3mA

typ

–0.02

–0.05

–0.1

–0.5

–1

–3

50

100

500

1000

5000

I

C

  (A)

h

FE

(V

CE

=–4V)

(V

CE

=–4V)

10000

5000

1000

500

100

50

–0.02

–0.05

–0.1

–0.5

–1

–3

I

C

  (A)

h

FE

T

a

=125

°

C

–30

°

C

75

°

C

25

°

C

0

0

–3

–1

–2

–2

–1

–3

I

C

  (A)

V

BE

  (V)

(V

CE

=–4V)

30

°

C

2

5

°

C

75

°

C

T

a

=

1

25

°

C

PNP + NPN Darlington

Stepper motor driver with
dual supply voltage switch

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

149

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

Safe Operating Area (SOA)

Characteristic curves

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=85V

–10

µ

A

V

CB

=–60V

I

EBO

5

mA

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

85

100

115

V

I

C

=10mA

–60

V

I

C

=–10mA

h

FE

2000

V

CE

=4V, I

C

=1A

2000

V

CE

=–4V, I

C

=–1A

V

CE

(sat)

1.5

V

I

C

=1A, I

B

=2mA

–1.5

V

I

C

=–1A, I

B

=–2mA

SMA6511

0.1

I

B  (

mA)

V

CE

  (sat) (V)

0

1

2

3

0.5

1

5

10

50 100

I

C

=2A

I

C

=1A

0.3

I

C

  (A)

0.5

1

3

 V

CE  (sat)

 (V)

0

1

2

3

125

°

C

75

°

C

25

°

C

T

a

=–30

°

C

(I

C

 / I

B

=1000)

1.5

I

C

  (A)

3

0.03

5

10

V

CE

  (V)

1

0.5

0.1

0.05

50

100

200

Single Pulse
Without Heatsink
T

a

=25

°

1ms

10ms

1

0

0

µ

s

5

0

µ

s

PW  (mS)

100

50

1000

500

5

10

5

1

10

20

θ

j–

a

  (

°

C / W)

1

20

15

10

5

0
–40

0

50

100

150

P

T

  (W)

T

a

  (

°

C)

With Infinite Heatsink

Without Heatsink

–0.1

I

B

  (mA)

–5

–1

–0.5

0

–1

–3

–2

V

CE

  (sat) (V)

(I

C

=–1A)

T

a

=125

°

C

3

0

°

C

75

°

C

2

5

°

C

–0.2

0

–1

–2

–0.5

–1

–3

–3

125

°

C

T

a

=–30

°

C

75

°

C

V

CE

  (sat) (V)

I

C

  (A)

(I

C

 / I

B

=1000)

25

°

C

–5

–0.1

–0.5

–1

–10

–50

–100

–3

–5

–3

V

CE

  (V)

I

C

  (A)

Single Pulse
Without Heatsink
T

a

=25

°

C

1m

s

10m

s

10

0

µ

s

PW  (mS)

0.5

100

1000

500

50

10

5

1

5

0.5

1

10

20

θ

j–

a

  (

°

C / W)

0.2

Electrical characteristics

P

T

-T

a

 Characteristics

θ

j-a

-PW Characteristics

PNP

NPN

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

150

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

SMA6512

R

1

: 3.5k

Ω 

typ  R

2

: 200

Ω 

typ  R

3

: 4k

Ω 

typ  R

4

: 100

Ω 

typ

8

9

6

7

3

4

1

2

5

10

12

11

R

3

R

1

R

2

R

4

(T

a

=25

°

C)

Symbol

Unit

V

CBO

60

±

10

–60

V

V

CEO

60

±

10

–60

V

V

EBO

6

–6

V

I

CP

1.5

–3

A

I

B

0.5

–0.5

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

P

T

W

Ratings

NPN

PNP

0

0

1

2

3

1

2

3

V

CE

  (V)

I

C

  (A)

5

4

6

I

B

=

1

0

.0

m

A

5.0mA 2.0mA

1.0m

A

0.6mA

0.4mA

0.3m

A

0.02

I

C

  (A)

0.1

0.05

1

0.5

3

30

50

1000

100

500

20000

10000

5000

h

FE

(V

CE

=4V)

typ

(V

CE

=4V)

20000

10000

5000

1000

500

100

50

30

0.02

0.05

0.1

0.5

1

3

 I

C

  (A)

 h

FE

T

a

=1

25

°

C

–30

°

C

75

°

C

25

°

C

0

V

BE

  (V)

2

1

3

0

3

2

1

I

C

  (A)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

0

0

–1

–2

–3

–1

–2

–3

V

CE

  (V)

I

C

  (A)

–5

–4

–6

I

B

=

10.0m

A

5

.0

m

A

–2.0

mA

–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.5mA

–0.4mA

–0.3mA

typ

–0.02

–0.05

–0.1

–0.5

–1

–3

50

100

500

1000

5000

I

C

  (A)

h

FE

(V

CE

=–4V)

(V

CE

=–4V)

10000

5000

1000

500

100

50

–0.02

–0.05

–0.1

–0.5

–1

–3

I

C

  (A)

h

FE

–3

0

°

C

75

°

C

25

°

C

T

a

=125

°

C

0

0

–3

–1

–2

–2

–1

–3

I

C

  (A)

V

BE

  (V)

(V

CE

=–4V)

30

°

C

25

°

C

75

°

C

Ta=125

°

C

PNP + NPN Darlington

Stepper motor driver with
dual supply voltage switch

External dimensions

B

 • • • 

SMA

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

151

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

Safe Operating Area (SOA)

Characteristic curves

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=50V

–10

µ

A

V

CB

=–60V

I

EBO

5

mA

V

EB

=6V

–5

mA

V

EB

=–6V

V

CEO

50

60

70

V

I

C

=10mA

–60

V

I

C

=–10mA

h

FE

2000

V

CE

=4V, I

C

=1A

2000

V

CE

=–4V, I

C

=–1A

V

CE

(sat)

1.5

V

I

C

=1A, I

B

=2mA

–1.5

V

I

C

=–1A, I

B

=–2mA

0.1

I

B

  (mA)

5

1

0.5

0

1

3

2

V

CE

  (sat) (V)

(I

C

=1A)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

(I

C

 / I

B

=1000)

3

2

0
0.2

0.5

1

I

C

  (A)

V

CE

  (sat) (V

)

1

3

75

°

C

25

°

C

30

°

C

T

a

=125

°

C

1.5

1

0.5

0.1

0.05

3

5

10

50

100

V

CE

 

  (V)

I

C

   (A

)

Single Pulse
Without Heatsink
T

a

=25

°

C

1m

s

10ms

100

µ

s

PW  (mS)

0.5

100

1000

500

50

10

5

1

5

1

0.5

10

30

θ

j–

a

  (

°

C / W)

0.2

20

15

10

5

0
–40

0

50

100

150

P

T

  (W)

T

a

  (

°

C)

W

ith

 In

fin

ite

 H

e

a

ts

in

k

Without Heatsink

–0.1

I

B

  (mA)

–5

–1

–0.5

0

–1

–3

–2

V

CE

  (sat) (V)

(I

C

=–1A)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

–0.2

0

–1

–2

–0.5

–1

–3

–3

V

CE

  (sat) (V)

 I

C

  (A)

(I

C

 / I

B

=1000)

125

°

C

75

°

C

25

°

C

T

a

=–30

°

C

–5

–0.1

–0.5

–1

–10

–50

–100

–3

–5

–3

Single Pulse
Without Heatsink
T

a

=25

°

V

CE

  (V)

I

C

  (A)

1

m

s

1

0

m

s

10

0

µ

s

PW  (mS)

0.5

100

1000

500

50

10

5

1

5

0.5

1

10

20

θ

j–

a

  (

°

C / W)

0.2

SMA6512

P

T

-T

a

 Characteristics

θ

j-a

-PW Characteristics

PNP

NPN

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

152

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

60

±

10

V

V

CEO

60

±

10

V

V

EBO

6

V

I

C

4

A

I

CP

8 (PW

10ms, D

u

50%)

A

3 (T

a

=25

°

C)

15 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

100

µ

A

V

CB

=50V

I

EBO

10

mA

V

EB

=6V

V

CEO

50

60

70

V

I

C

=10mA

h

FE

1000

V

CE

=4V, I

C

=3A

V

CE

(sat)

2.0

V

I

C

=3A, I

B

=10mA

t

on

1.0

µ

s

V

CC

30V,

t

stg

4.0

µ

s

I

C

=3A,

t

f

1.5

µ

s

I

B1

=–I

B2

=10mA

Specification

min

typ

max

P

T

W

STA301A

5

4

3

2

1

0

0

1

2

3

4

1.0mA

0.8mA

0.6mA

0.5mA

0.4mA

0.3mA

I

B

=2.0mA

V

CE

  (V)

I

C

  (A)

20000

0.05

0.1

1

4

I

C

  (A)

10000

5000

1000

500

100

50

0.5

h

FE

(V

CE

=4V)

typ

20000

10000

5000

1000

500

100

0.05

0.1

0.5

1

4

25

°

C

h

FE

I

C

  (A)

(V

CE

=4V)

–30

°

C

T

a

=1

25

°

C

0.1

2

1

0

0.5

1

4

I

C

  (A)

 V

CE

  (sat) (V)

T

a

=–30

°

C

25

°

C

125

°

C

(I

C

 / I

B

=1000)

3

2

1

0

0.2

0.5

1

5 10

50 100

V

CE

  (sat) (V)

I

B

  (mA)

I

C

=4A

I

C

=3A

I

C

=2A

I

C

=1A

30

10

5

1.0

0.5

1

5

10

50 100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

50

100

150

0

P

T

  (W)

T

a

  (

°

C)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

2

4

6

8

10

12

14

16

With Infinite Heatsink

Without Heatsink

25

×

50

×

2

50

×

50

×

2

10

5

1

0.5

0.1

3

5

10

50

100

I

C

  (A)

V

CE

  (V)

0.05

10ms

1ms

Single Pulse
Without Heatsink
T

a

=25

°

C

2

1

3

R

1

R

2

4

5

6

7

8

R

1

: 3k

Ω 

typ  R

2

: 150

Ω 

typ

NPN Darlington

With built-in avalanche diode

4

3

2

1

0

0

1

2

I

C

  (A)

V

BE

  (V)

(V

CE

=4V)

T

a

=

12

5

°

C

7

5

°

C

25

°

C

30

°

C

Absolute maximum ratings

Equivalent circuit diagram

External dimensions

C

 • • • 

STA (8-pin)

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

153

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–50

V

V

CEO

–50

V

V

EBO

–6

V

I

C

–4

A

I

CP

–8 (PW

10ms, D

u

50%)

A

3 (T

a

=25

°

C)

15 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–100

µ

A

V

CB

=–50V

I

EBO

–10

mA

V

EB

=–6V

V

CEO

–50

V

I

C

=–10mA

h

FE

1000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

–2.0

V

I

C

=–3A, I

B

=–10mA

t

on

0.4

µ

s

V

CC

–30V,

t

stg

0.8

µ

s

I

C

=–3A,

t

f

0.6

µ

s

I

B1

=–I

B2

=–10mA

Specification

min

typ

max

P

T

W

STA302A

–3

–2

–1

0

0

–1

–2

–3

–4

–5

–6

–0.8mA

–1.0mA

–1.2m

A

–1.5m

A

–1.8mA

I

B

=

2.3mA

I

C  

(A)

V

CE

   (V)

–0.9mA

–0.03

10000

5000

1000

500

100

50

20

–0.05 –0.1

–0.5

–1

–5 –6

(V

CE

=–4V)

h

FE

I

C

  (A)

typ

10000

5000

1000

500

100

–0.02

–0.1

–0.5

–1

–4

h

FE

I

C

  (A)

(V

CE

=–4V)

–0.05

50

20

T

a

=125

°

C

25

°

C

–3

0

°

C

–0.7

–1

0

–4

 I

C

  (A)

V

CE

  (sat) (V)

–1

–2

25

°

C

125

°

C

T

a

=–30

°

C

(I

C

 / I

B

=500)

I

C

=–4A

I

C

=–2A

I

C

=–1A

–3

–0.2

–0.5

–1

–5

–10

–50

–2

–1

0

–100

V

CE

  (sat) (V)

I

B

  (mA)

–6

–4

–2

0

0

–1

–2

–3

–1

–3

–5

30

°

C

Ta=125

°

C

75

°

C

25

°

C

(V

CE

=–4V)

I

C

  (A)

V

BE

  (V)

20

10

5

10

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

50

100

150

0

P

T

  (W)

T

a

  (

°

C)

2

4

6

8

10

12

14

16

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

Without Heatsink

25

×

50

×

2

50

×

50

×

2

–10

–5

–1

–0.5

–0.1

–3

–5

–10

–50

I

C

  (A)

V

CE

  (V)

–0.03

–0.05

–100

Single Pulse
Without Heatsink
T

a

=25

°

C

1m

s

10m

s

2

1

3

R

1

R

2

4

5

6

7

8

R

1

: 2k

Ω 

typ  R

2

: 150

Ω 

typ

PNP Darlington

General purpose/3-phase motor drive

External dimensions

C

 • • • 

STA (8-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

154

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

120

V

V

CEO

100

V

V

EBO

6

V

I

C

4

A

I

CP

8 (PW

10ms, D

u

50%)

A

3 (T

a

=25

°

C)

15 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

100

µ

A

V

CB

=120V

I

EBO

10

mA

V

EB

=6V

V

CEO

100

V

I

C

=10mA

h

FE

1000

V

CE

=4V, I

C

=2A

V

CE

(sat)

2.0

V

I

C

=2A, I

B

=10mA

t

on

0.8

µ

s

V

CC

40V,

t

stg

5.0

µ

s

I

C

=2A,

t

f

2.0

µ

s

I

B1

=–I

B2

=10mA

Specification

min

typ

max

P

T

W

STA303A

4

3

2

1

0

1

0

2

3

4

5

I

B

=1m

A

0.8mA

0.6mA

0.5m

A

0.4m

A

0.3mA

I

C

  (A)

V

CE

  (V)

20000

10000

5000

1000

500

100

50

(V

CE

=4V)

typ

0.02

0.05

0.1

0.5

1

4

h

FE

I

C

  (A)

20000

10000

5000

500

100

0.02

0.05

0.5

1

4

h

FE

I

C

  (A)

1000

50

0.1

T

a

=125

°

C

25

°

C

–30

°

C

(V

CE

=4V)

0.2

3

1

0

0.5

1

4

I

C

  (A)

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

2

T

a

=–30

°

C

25

°

C

125

°

C

3

2

1

0

0.2

0.5

1

5

10

50

100

I

B

  (mA)

V

CE

  (sat) (V)

I

C

=4A

I

C

=3A

I

C

=2A

I

C

=1A

4

3

2

1

0

1

2

I

C

  (A)

V

BE

  (V)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

20

10

5

1.0

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

50

100

150

0

P

T

  (W)

T

a

  (

°

C)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

2

4

6

8

10

12

14

16

W

ith

 In

fin

ite

 H

e

a

ts

in

k

Without Heatsink

25

×

50

×

2

50

×

50

×

2

10

5

1

0.5

0.1

3

5

10

50

I

C

  (A)

 

V

CE

  (V)

0.05

100

200

10ms

1ms

0.03

Single Pulse
Without Heatsink
T

a

=25

°

C

2

1

3

R

1

R

2

4

5

6

7

8

R

1

: 3k

Ω 

typ  R

2

: 500

Ω 

typ

NPN Darlington

General purpose/3-phase motor drive

Absolute maximum ratings

External dimensions

C

 • • • 

STA (8-pin)

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

155

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

550

V

V

CEO

550

V

V

EBO

6

V

I

C

1

A

I

CP

2 (PW

1ms, D

u

25%)

A

I

B

0.5

A

3 (T

a

=25

°

C)

15 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

100

µ

A

V

CB

=550V

I

EBO

75

150

mA

V

EB

=6V

V

CEO

550

V

I

C

=100

µ

A

h

FE

200

400

1000

V

CE

=4V, I

C

=500mA

V

CE

(sat)

1.0

1.5

V

V

BE

(sat)

1.5

2.2

V

V

FEC

1.1

1.5

V

I

FEC

=1A

t

on

0.5

µ

s

V

CC

200V,

t

stg

3.5

µ

s

I

C

=500mA,

t

f

0.7

µ

s

I

B1

=–I

B2

=10mA

f

T

15

MHz

V

CE

=12V, I

E

=–0.2A

C

ob

35

pF

V

CB

=10V, f=1MHz

Specification

min

typ

max

P

T

W

STA304A

I

C

=500mA, I

B

=10mA

R

1

: 500

Ω 

typ  R

2

: 70

Ω 

typ

2

1

3

R

1

R

2

4

5

6

7

8

1.0

0.8

0.6

0.4

0.2

0

0

1

2

3

4

5

6

I

C

  (A)

V

CE

  (V)

I

B

=20mA

10m

A

5mA

2mA

1.5mA

1000

h

FE 100

50

10

I

C

  (A)

0.03

0.1

0.05

1

0.5

2

(V

CE

=4V)

typ

500

1000

h

FE

100

50

10

I

C

  (A)

0.03

0.1

0.05

1

0.5

2

(V

CE

=4V)

500

T

a

=125

°

C

25

°

C

75

°

C

–3

0

°

C

3

2

1

0

(I

C

 / I

B

=100)

0.2

0.5

1

2

V

CE

  (sat) (V)

I

C

  (A)

T

a

=–30

°

C

25

°

C

75

°

C

125

°

C

3

2

1

0

1

V

CE

  (sat) (V)

I

B

  (mA)

5

50

500

10

100

I

C

=1A

I

C

=0.5A

2.0

I

C

  (A)

V

BE

  (V)

0

(V

CE

=4V)

1.5

1.0

0.5

0

1

2

3

T

a

=

1

2

5

°

C

7

5

°

C

25

°

C

30

°

C

20

10

5

1.0

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

50

100

150

0

P

T

  (W)

T

a

  (

°

C)

2

4

6

8

10

12

14

16

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

W

ith

 In

fin

ite

 H

e

a

ts

in

k

Without Heatsink

25

×

50

×

2

50

×

50

×

2

0.1

0.05

1

0.5

0.01

0.005

0.003

5

 V

CE

  (V)

 I

C

  (A)

3

5

10

50

100

600

500

10ms

1ms

100

µ

s

Single Pulse
Without Heatsink
T

a

=25

°

C

NPN Darlington

3-phase motor drive

External dimensions

C

 • • • 

STA (8-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

156

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–550

V

V

CEO

–550

V

V

EBO

–6

V

I

C

–1

A

I

CP

–2 (PW

1ms, D

u

25%)

A

I

B

–0.5

A

3 (T

a

=25

°

C)

15 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–100

µ

A

V

CB

=–550V

I

EBO

–10

–20

mA

V

EB

=–6V

V

CEO

–550

V

I

C

=–100

µ

A

h

FE

200

400

1000

V

CE

=–4V, I

C

=–500mA

V

CE

(sat)

–1.0

–1.5

V

V

BE

(sat)

–1.6

–2.2

V

t

on

0.7

µ

s

V

CC

–200V,

t

stg

13.0

µ

s

I

C

=–500mA,

t

f

2.5

µ

s

I

B1

=–I

B2

=–10mA

f

T

15

MHz

V

CE

=–12V, I

E

=0.2A

C

ob

48

pF

V

CB

=–10V, f=1MHz

Specification

min

typ

max

P

T

W

STA305A

I

C

=–500mA, I

B

=–10mA

R

1

: 500

Ω 

typ  R

2

: 70

Ω 

typ

2

1

3

R

1

R

2

4

5

6

7

8

–1.0

–0.8

–0.6

–0.4

–0.2

0

–1

0

–2

–3

–4

–5

–6

I

C

  (A)

V

CE

  (V)

–5

m

A

–2mA

I

B

=–20mA

–10mA

–1.5mA

1000

h

FE 100

50

10

I

C

  (A)

–0.03 –0.05

–0.1

–1

–0.5

–2

(V

CE

=–4V)

typ

500

1000

h

FE

100

50

10

I

C

  (A)

–0.03 –0.05

–0.1

–1

–0.5

–2

(V

CE

=–4V)

500

T

a

=125

°

C

25

°

C

75

°

C

–30

°

C

–3

–2

–1

0

–0.2

–0.5

–1

–2

(I

C

 / I

B

=100)

V

CE

  (sat) (V)

I

C

  (A)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

–3

–2

–1

0

–1

V

CE

  (sat) (V)

I

B

  (mA)

–5

–50

–500

–10

–100

I

C

=1A

I

C

=0.5A

–2.0

I

C

  (A)

V

BE

  (V)

0

(V

CE

=–4V)

–1.5

–1.0

–0.5

0

–1

–2

–3

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

20

10

5

1.0

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

50

100

150

0

P

T

  (W)

T

a

  (

°

C)

2

4

6

8

10

12

14

16

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

W

ith

 In

fin

ite

 H

e

a

ts

in

k

Without Heatsink

25

×

50

×

2

50

×

50

×

2

–0.1

–0.05

–1

–0.5

–0.01

–0.005

–0.003

–5

V

CE

  (V)

I

C

  (A)

–3

–5

–10

–50

–100

–600

–500

10

m

s

1m

s

100

µ

s

Single Pulse
Without Heatsink
T

a

=25

°

C

PNP Darlington

3-phase motor drive

External dimensions

C

 • • • 

STA (8-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

157

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–120

V

V

CEO

–120

V

V

EBO

–6

V

I

C

–4

A

I

B

–1

A

3 (T

a

=25

°

C)

15 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–10

µ

A

V

CB

=–120V

I

EBO

–10

mA

V

EB

=–6V

V

CEO

–120

V

I

C

=–10mA

h

FE

2000

V

CE

=–4V, I

C

=–2A

V

CE

(sat)

–1.5

V

V

BE

(sat)

–2.5

V

Specification

min

typ

max

P

T

W

STA308A

I

C

=–2A, I

B

=–4mA

–4

–3

–2

–1

0

0

–1

–2

–3

–4

–5

–6

I

C

  (A)

V

CE

  (V)

I

B

=–5mA

–2mA

–1.5mA

–1.0mA

–0.7mA

–0.5mA

–0.3mA

10000

5000

1000

500

100

50

h

FE

(V

CE

=–4V)

–0.03 –0.05

–0.1

–0.5

–1

–4

I

C

  (A)

typ

10000

5000

1000

500

100

50

–0.03 –0.05

–0.1

–0.5

–1

–4

h

FE

I

C

  (A)

(V

CE

=–4V)

75

°

C

25

°

C

T

a

=125

°

C

–30

°

C

(I

C

 / I

B

=1000)

–3

–0.2

V

CE

  (sat) (V)

I

C

  (A)

–2

–1

0

–0.5

–1

–4

125

°

C

75

°

C

25

°

C

T

a

=–30

°

C

–3

–2

–1

0

–0.1

–0.5

–1

–10

–5

–50 –100

I

B

  (mA)

V

CE

  (sat) (V)

I

C

=–4A

I

C

=–2A

I

C

=–1A

(V

CE

=–4V)

–4

–3

–2

–1

0

I

C

  (A)

0

–1

–2

–3

V

BE

  (V)

T

a

=125

°

C

75

°

C

25

°

C

3

0

°

C

20

10

5

1

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

P

T

  (W)

T

a

  (

°

C)

2

4

6

8

10

12

14

16

With Silicone Grease
Single Pulse
Without Heatsink
T

a

=25

°

C

in mm

0

50

100

150

W

ith

 In

fin

ite

 H

e

a

ts

in

k

Without Heatsink

25

×

50

×

2

50

×

50

×

2

–10

–3

 I

C

  (A)

V

CE

  (V)

–5

–1

–0.5

–0.1

–0.05

–0.03

–5

–10

–50

–100 –200

10ms

1ms

100

µ

s

Single Pulse
Without Heatsink
T

a

=25

°

C

2

1

3

R

1

R

2

4

5

6

7

8

R

1

: 5k

Ω 

typ  R

2

: 100

Ω 

typ

PNP Darlington

General purpose

External dimensions

C

 • • • 

STA (8-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

158

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

60

V

V

CEO

60

V

V

EBO

6

V

I

C

3

A

I

CP

6 (PW

10ms, D

u

50%)

A

3 (T

a

=25

°

C)

15 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

100

µ

A

V

CB

=60V

I

EBO

100

µ

A

V

EB

=6V

V

CEO

60

V

I

C

=25mA

h

FE

300

V

CE

=4V, I

C

=0.5A

V

CE

(sat)

1.0

V

I

C

=1A, I

B

=10mA

t

on

0.8

µ

s

V

CC

20V,

t

stg

3.0

µ

s

I

C

=1A,

t

f

1.2

µ

s

I

B1

=15mA, I

B2

=–30mA

Specification

min

typ

max

P

T

W

STA312A

3

2

1

0

I

C

  (A)

0

1

2

3

4

5

6

V

CE

  (V)

I

B

=12mA

8mA

5mA

3mA

2mA

1mA

0.5mA

2000

1000

500

100

0.01

0.05

0.1

0.5

1

3

typ

h

FE

I

C

  (A)

(V

CE

=4V)

2000

1000

500

100

h

FE

0.01

0.05

0.1

0.5

1

3

I

C

  (A)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

1.5

1.0

0.5

0

V

BE

  (sat)

V

CE

  (sat)

(I

C

 / I

B

=20)

V

CE

 (sat), V

BE

 (sat) (V)

0.01

0.1

1

5

0.5

0.05

I

C

  (A)

1.5

1.0

0.5

0

I

C

= 3A

I

C

=2A

I

C

=1A

0.001

0.005 0.01

0.05 0.1

0.5

1

V

CE

  (sat) (V)

I

B

  (A)

3

2

1

0

0

0.5

1.0

1.5

I

C

  (A)

V

BE

  (V)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

20

10

5

1

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

P

T

  (W)

2

4

6

8

10

12

14

16

0

50

100

150

T

a

  (

°

C)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

W

ith Infinite H

eatsink

Without Heatsink

25

×

50

×

2

50

×

50

×

2

10

5

1

0.5

0.1

0.05

3

5

10

50

100

I

C

  (A)

V

CE

  (V)

10

m

s

1ms

Single Pulse
Without Heatsink
T

a

=25

°

C

2

1

3

8

4

5

6

7

NPN

General purpose

External dimensions

C

 • • • 

STA (8-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat), V

BE

(sat)-I

C

 Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

159

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–50

V

V

CEO

–50

V

V

EBO

–5

V

I

C

–3

A

I

CP

–5 (PW

1ms, D

u

50%)

A

I

B

–1

A

3 (T

a

=25

°

C)

15 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–10

µ

A

V

CB

=–50V

I

EBO

–10

µ

A

V

EB

=–8V

V

CEO

–50

V

I

C

=–25mA

h

FE

100

350

V

CE

=–4V, I

C

=–1A

V

CE

(sat)

–1.0

V

V

BE

(sat)

–1.5

V

Specification

min

typ

max

P

T

W

STA322A

I

C

=–2A, I

B

=–40mA

2

1

3

4

5

6

7

8

–5

 I

C

  (A)

–4

–3

–2

–1

0

0

–1

–2

–3

–4

–5

–6

V

CE

  (V)

–50mA

–40mA

–30mA

–20mA

–10mA

I

B

=

80mA

–60

mA

–5mA

1000

500

100

50

30

(V

CE

=–4V)

–0.01

–0.05 –0.1

–0.5

–1

–5

I

C

  (A)

h

FE

typ

500

100

–0.01

–0.1

–0.5

–1

–5

h

FE

I

C

  (A)

(V

CE

=–4V)

–0.05

30

50

T

a

=125

°

C

25

°

C

–30

°

C

1000

–0.01

–1.0

0

I

C

  (A)

(I

C

 / I

B

=50)

V

CE

  (sat) (V)

–0.5

–0.05 –0.1

–0.5

–1

–5

25

°

C

T

a

=125

°

C

30

°

C

–2

–1

0

–0.002 –0.005 –0.01

–0.05 –0.1

–0.5

–1

I

C

=–2A

I

C

=–1A

I

C

=–0.5A

V

CE

  (sat) (V)

I

B

  (A)

–3

–2

–1

0

(V

CE

=–4V)

0

–0.5

–1.0

–1.5

I

C

  (A)

V

BE

  (V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

30

10

5

1

0.5

0.1

0.1

0.5 1

5 10

50 100

5001000

5000

PW  (mS)

θ

j–

a

  (

°

C / W)

–40

0

P

T

  (W)

2

4

6

8

10

12

14

16

0

50

100

150

T

a

  (

°

C)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

W

ith

 In

fin

ite

 H

e

a

ts

in

k

Without Heatsink

25

×

50

×

2

50

×

50

×

2

–10

–5

–1

–0.5

–0.1

–0.05

–0.5

I

C

  (A)

–1

–5

–10

 

V

CE

  (V)

–50

10ms

5ms

1ms

Single Pulse
Without Heatsink
T

a

=25

°

C

PNP

General purpose

Equivalent circuit diagram

External dimensions

C

 • • • 

STA (8-pin)

Absolute maximum ratings

Electrical characteristics

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

160

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

60

±

10

V

V

CEO

60

±

10

V

V

EBO

6

V

I

C

2

A

I

CP

4 (PW

1ms, D

u

25%)

A

I

B

0.5

A

3 (T

a

=25

°

C)

15 (T

c

=25

°

C)

T

j

150

°

C

T

stg

–40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=50V

I

EBO

5

mA

V

EB

=6V

V

CEO

50

60

70

V

I

C

=10mA

h

FE

2000

5000

12000

V

CE

=4V, I

C

=1A

V

CE

(sat)

1.1

1.5

V

V

BE

(sat)

1.8

2.2

V

V

FEC

1.3

1.8

V

I

FEC

=1A

t

on

0.5

µ

s

V

CC

30V,

t

stg

4.0

µ

s

I

C

=1A,

t

f

1.0

µ

s

I

B1

=–I

B2

=2mA

f

T

50

MHz

V

CE

=12V, I

E

=–0.1A

C

ob

25

pF

V

CB

=10V, f=1MHz

Specification

min

typ

max

P

T

W

STA371A

I

C

=1A, I

B

=2mA

R

1

: 3.5k

 typ  R

2

: 200

 typ

2

1

3

R

1

R

2

4

5

6

7

8

0

1

2

3

4

I

C

  (A)

0

1

2

3

V

CE

  (V)

5

4

6

0.3mA

0.4mA

0.6mA

2.0mA

5.0mA

1.0m

A

I

B

=10.0mA

0.02

I

C

  (A)

0.1

0.05

1

0.5

4

30

50

1000

100

500

10000

5000

h

FE

(V

CE

=4V)

Typ

(V

CE

=4V)

20000

10000

5000

1000

500

100

50

30

0.02

0.05

0.1

0.5

1

4

 I

C

  (A)

 h

FE

75

°

C

25

°

C

–30

°

C

T

a

=125

°

C

(I

C

 / I

B

=1000)

3

2

0
0.2

0.5

1

I

C

  (A)

V

CE

  (sat) (V

)

1

4

75

°

C

25

°

C

30

°

C

T

a

=125

°

C

0.1

I

B

  (mA)

3

1

0.5

0

1

3

2

V

CE

  (sat) (V)

(I

C

=1A)

T

a

=125

°

C

3

0

°

C

75

°

C

25

°

C

V

BE

  (V)

0

2

1

3

0

3

2

1

4

I

C

  (A)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

PW  (mS)

0.5

100

1000

500

50

10

5

1

5

1

0.5

10

30

θ

j–

a

  (

°

C / W)

0.2

–40

0

P

T

  (W)

2

4

6

8

10

12

14

16

0

50

100

150

T

a

  (

°

C)

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

Without Heatsink

25

×

50

×

2

50

×

50

×

2

5

1

0.5

0.1

0.05

3

5

10

50

100

V

CE

 

  (V)

I

C

  (A)

Single Pulse
Without Heatsink
T

a

=25

°

C

1m

s

10

m

s

100

µ

s

NPN Darlington

With built-in avalanche diode

External dimensions

C

 • • • 

STA (8-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

161

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

STA401A

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

60

±

10

V

V

CEO

60

±

10

V

V

EBO

6

V

I

C

4

A

I

CP

8 (PW

10ms, D

u

50%)

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

–40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

100

µ

A

V

CB

=50V

I

EBO

10

mA

V

EB

=6V

V

CEO

50

60

70

V

I

C

=10mA

h

FE

1000

V

CE

=4V, I

C

=3A

V

CE

(sat)

2.0

V

I

C

=3A, I

B

=10mA

t

on

1.0

µ

s

V

CC

30V,

t

stg

4.0

µ

s

I

C

=3A,

t

f

1.5

µ

s

I

B1

=–I

B2

=10mA

5

4

3

2

1

0

0

1

2

3

4

1.0mA

0.8mA

0.6mA

0.5mA

0.4mA

0.3mA

I

B

=2.0mA

V

CE

  (V)

I

C

 

  (A)

20000

0.05

0.1

1

4

I

C

  (A)

10000

5000

1000

500

100

50

0.5

 

h

FE

(V

CE

=4V)

typ

20000

10000

5000

1000

500

100

0.05

0.1

0.5

1

4

T

a

=125

°

C

25

°

C

–30

°

C

h

FE

I

C

  (A)

(V

CE

=4V)

0.1

2

1

0

0.5

1

4

I

C

  (A)

V

CE

  (sat) (V)

T

a

=–30

°

C

25

°

C

125

°

C

(I

C

 / I

B

=1000)

3

2

1

0

0.2

0.5

1

5

10

50

100

V

CE

  (sat) (V)

I

B

  (mA)

I

C

=4A

I

C

=2A

I

C

=3A

I

C

=1A

20

10

5

1.0

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

10

5

1

0.5

0.1

3

5

10

50

I

C

  (A)

V

CE

  (V)

0.05

100

10ms

1ms

Single Pulse
Without Heatsink
T

a

=25

°

C

2

1

3

R

1

R

2

4

5

6

7

8

9

10

R

1

: 3k

Ω 

typ  R

2

: 150

Ω 

typ

NPN Darlington

With built-in avalanche diode

0

1

V

BE

  (V)

2

3

4

2

1

0

I

C

  (A)

(V

CE

=–4V)

T

a

=

1

2

5

°

C

75

°

C

25

°

C

3

0

°

C

Absolute maximum ratings

P

T

W

Equivalent circuit diagram

Specification

min

typ

max

Electrical characteristics

External dimensions

D

 • • • 

STA (10-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

162

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–50

V

V

CEO

–50

V

V

EBO

–6

V

I

C

–4

A

I

CP

–8 (PW

10ms, D

u

50%)

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–100

µ

A

V

CB

=–50V

I

EBO

–10

mA

V

EB

=–6V

V

CEO

–50

V

I

C

=–10mA

h

FE

1000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

–2.0

V

I

C

=–3A, I

B

=–10mA

t

on

0.4

µ

s

V

CC

–30V,

t

stg

0.8

µ

s

I

C

=–3A,

t

f

0.6

µ

s

I

B1

=–I

B2

=–10mA

Specification

min

typ

max

P

T

W

STA402A

R

1

: 2k

Ω 

typ  R

2

: 150

Ω 

typ

1

R

1

R

2

2

3

4

5

6

7

8

9

10

–6

–5

–4

–3

–2

–1

0

0

–1

–2

–3

–4

–5

–6

–1.5mA

–1.2mA

–1.0mA

–0.8mA

I

C

  (A)

V

CE

  (V)

I

B

=

2.3m

A

–1.8mA

10000

5000

1000

500

100

50

20

(V

CE

=–4V)

typ

–0.02

–0.05

–0.1

–0.5

–1

–4

h

FE

I

C

  (A)

10000

5000

1000

500

100

–0.02

h

FE

I

C

  (A)

(V

CE

=–4V)

50

20

–0.05 –0.1

–0.5

–1

–4

T

a

=125

°

C

25

°

C

–30

°

C

–0.7

–2

–1

0

–4

 I

C

  (A)

 V

CE

  (sat) (V)

T

a

=–30

°

C

25

°

C

125

°

C

(I

C

 / I

B

=500)

–1

–3

–2

–1

0

–0.5

–0.1

–5

–10

–50

I

C

=–4A

I

C

=–2A

I

C

=–1A

I

B

  (mA)

V

CE

  (sat) (V)

–4

–3

–2

–1

0

0

–1

–2

–3

I

C

  (A)

V

BE

  (V)

(V

CE

=–4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

20

10

5

10

0.5

1

5

10

50 100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

–10

–5

–1

–0.5

–0.1

–3

–5

–10

–50

I

C

  (A)

 V

CE

  (V)

–0.05

–100

10

m

s

1ms

–0.03

Single Pulse
Without Heatsink
T

a

=25

°

C

PNP Darlington

General purpose

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

163

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

120

V

V

CEO

100

V

V

EBO

6

V

I

C

4

A

I

CP

8 (PW

10ms, D

u

50%)

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

100

µ

A

V

CB

=120V

I

EBO

10

mA

V

EB

=6V

V

CEO

100

V

I

C

=10mA

h

FE

1000

V

CE

=4V, I

C

=2A

V

CE

(sat)

2.0

V

I

C

=2A, I

B

=10mA

t

on

0.6

µ

s

V

CC

40V,

t

stg

5.0

µ

s

I

C

=2A,

t

f

2.0

µ

s

I

B1

=–I

B2

=10mA

Specification

min

typ

max

P

T

W

STA403A

R

1

: 3k

Ω 

typ  R

2

: 500

Ω 

typ

2

1

3

R

1

R

2

4

5

6

7

8

9

10

4

3

2

1

0

1

0

2

3

4

5

I

B

=1

mA

0.8mA

0.6m

A

0.5mA

0.4mA

0.3mA

I

C

  (A)

V

CE

  (V)

20000

10000

5000

1000

500

100

50

(V

CE

=4V)

typ

0.02

0.05

0.1

0.5

1

4

h

FE

I

C

  (A)

20000

10000

5000

500

100

0.02

0.05

0.5

1

4

h

FE

I

C

  (A)

1000

50

0.1

T

a

=125

°

C

25

°

C

–30

°

C

(V

CE

=4V)

0.2

3

1

0

0.5

1

4

I

C

  (A)

V

CE

  (sat) (V)

2

T

a

=–30

°

C

25

°

C

125

°

C

(I

C

 / I

B

=1000)

3

2

1

0

0.2

0.5

1

5

10

50

100

I

B

  (mA)

V

CE

  (sat) (V)

I

C

=1A

I

C

=2A

I

C

=3A

I

C

=4A

4

3

2

1

0

1

2

I

C

  (A)

V

BE

  (V)

(V

CE

=4V)

T

a

=

1

2

5

°

C

7

5

°

C

2

5

°

C

3

0

°

C

20

10

5

1.0

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

10

5

1

0.5

0.1

3

5

10

50

I

C

  (A)

 

V

CE

  (V)

0.05

100

10m

s

1ms

0.03

Single Pulse
Without Heatsink
T

a

=25

°

C

NPN Darlington

General purpose

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

164

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

200

V

V

CEO

200

V

V

EBO

6

V

I

C

3

A

I

CP

6 (PW

10ms, D

u

50%)

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

100

µ

A

V

CB

=200V

I

EBO

10

mA

V

EB

=6V

V

CEO

200

V

I

C

=10mA

h

FE

1000

V

CE

=4V, I

C

=1A

V

CE

(sat)

2.0

V

I

C

=1A, I

B

=1.5mA

Specification

min

typ

max

P

T

W

STA404A

6

5

4

3

2

1

0

I

C

  (A)

0

1

2

3

4

5

6

V

CE

  (V)

I

B

=200mA

100mA

30mA

10mA

3mA

1mA

(V

CE

=4V)

5000

1000

500

100

50

30

0.03 0.05

0.1

0.5

1

5 6

h

FE

I

C

  (A)

5000

1000

500

100

50

30

0.03 0.05

0.1

0.5

5 6

(V

CE

=4V)

h

FE

I

C

  (A)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

3

2

1

0

V

CE

  (sat) (V)

I

C

=3A

I

C

=1.5A

I

C

=1A

0.5

1

5

10

50

100

200

I

B

  (mA)

6

5

4

3

2

1

0

0

1

2

3

I

C

  (A)

V

BE

  (V)

(V

CE

=4V)

30

°

C

75

°

C

25

°

C

T

a

=125

°

C

3

2

1

0

V

CE

  (sat) (V)

0.2

0.5

1

5

6

I

C

  (A)

(I

C

 / I

B

=100)

–30

°

C

75

°

C

25

°

C

Ta=125

°

C

20

10

5

1

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

1mS

1

µ

S

10

m

S

10

5

1

0.5

0.1

0.05

0.03

5

10

50

100

200

I

C

  (A)

V

CE

  (V)

Single Pulse
Without Heatsink
T

a

=25

°

C

2

1

3

R

1

R

2

4

5

6

7

8

9

10

R

1

: 2k

Ω 

typ  R

2

: 200

Ω 

typ

NPN Darlington

General purpose

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

165

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

60

±

10

V

V

CEO

60

±

10

V

V

EBO

6

V

I

C

6

A

I

B

1

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=50V

I

EBO

10

mA

V

EB

=6V

V

CEO

50

60

70

V

I

C

=50mA

h

FE

2000

15000

V

CE

=2V, I

C

=3A

V

CE

(sat)

1.5

V

V

BE

(sat)

2.0

V

E

S/B

200

mJ

V

CC

20V, L=10mH, I

C

=6.4A

Specification

min

typ

max

P

T

W

STA406A

I

C

=3A, I

B

=10mA

R

1

: 3k

Ω 

typ  R

2

: 150

Ω 

typ

2

1

3

R

1

R

2

4

5

6

7

8

9

10

6

0

1

2

3

4

5

0

1

2

3

4

5

6

V

CE

  (V)

1mA

0.8mA

0.6mA

0.4mA

1.5mA

I

B

=10mA

I

C

  (A)

20000

 h

FE

10000

5000

1000

500

100

50

30

0.03 0.05

0.1

0.5

1

5 6

typ

I

C

  (A)

(V

CE

=2V)

h

FE

500

100

50

30

0.03 0.05

0.1

0.5

1

5 6

I

C

  (A)

(V

CE

=2V)

T

a

=1

25

°

C

75

°

C

25

°

C

–3

0

°

C

1000

5000

10000

20000

3

2

1

0

0.3

0.5

1

5 6

I

C

  (A)

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

125

°

C

T

a

=–30

°

C

25

°

C

75

°

C

3

2

1

0

0.1

0.5

1

5

10

50

100

I

C

=6A

I

C

=3A

I

C

=1A

V

CE

  (sat) (V)

I

B

  (mA)

I

C

  (A)

6

1

2

3

4

5

0

1

2

3

V

BE

  (V)

0

(V

CE

=2V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

20

10

5

1

0.5

θ

j–

a

  (

°

C / W)

PW  (mS)

1

5

10

50

100

500 1000

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

I

C

  (A)

20

0.05

0.1

0.5

1

5

10

3

5

10

50

100

1m

s

10ms

V

CE

  (V)

100

µ

s

Single Pulse
Without Heatsink
T

a

=25

°

C

NPN Darlington

With built-in avalanche diode

Absolute maximum ratings

External dimensions

D

 • • • 

STA (10-pin)

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

166

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–120

V

V

CEO

–120

V

V

EBO

–6

V

I

C

–4

A

I

B

–1

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–10

µ

A

V

CB

=–120V

I

EBO

–10

mA

V

EB

=–6V

V

CEO

–120

V

I

C

=–10mA

h

FE

2000

V

CE

=–4V, I

C

=–2A

V

CE

(sat)

–1.5

V

V

BE

(sat)

–2.5

V

Specification

min

typ

max

P

T

W

STA408A

I

C

=–2A, I

B

=–4mA

R

1

: 5k

Ω 

typ  R

2

: 100

Ω 

typ

1

3

R

1

R

2

2

5

4

7

6

9

8

10

–4

–3

–2

–1

0

0

–1

–2

–3

–4

–5

–6

I

C

  (A)

V

CE

  (V)

I

B

=–5mA

–2mA

–1.5mA

–1.0mA

–0.7mA

–0.5mA

–0.3mA

10000

5000

1000

500

100

50

h

FE

typ

(V

CE

=–4V)

–0.03 –0.05

–0.1

–0.5

–1

–4

I

C

  (A)

10000

5000

1000

500

100

50

–0.03

–0.05 –0.1

–0.5

–1

–4

h

FE

T

a

=125

°

C

I

C

  (A)

–30

°

C

75

°

C

(V

CE

=–4V)

25

°

C

(I

C

 / I

B

=1000)

–3

–0.2

V

CE

  (sat) (V)

I

C

  (A)

–2

–1

0

–0.5

–1

–4

125

°

C

75

°

C

25

°

C

T

a

=–30

°

C

–3

–2

–1

0

–0.1

–0.5 –1

–10

–5

–50 –100

I

B

  (mA)

V

CE

  (sat) (V)

I

C

=–4A

I

C

=–2A

I

C

=–1A

(V

CE

=–4V)

–4

–3

–2

–1

0

I

C

  (A)

0

–1

–2

–3

V

BE

  (V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

20

10

5

1

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

–10

–3

 I

C

  (A)

V

CE

  (V)

–5

–1

–0.5

–0.1

–0.05

–0.03

–5

–10

–50

–100

–200

Single Pulse
Without Heatsink
T

a

=25

°

C

10m

s

1ms

100

µ

s

PNP Darlington

General purpose

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

167

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

60

V

V

CEO

60

V

V

EBO

6

V

I

C

3

A

I

CP

6 (PW

10ms, D

u

50%)

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

100

µ

A

V

CB

=60V

I

EBO

100

µ

A

V

EB

=6V

V

CEO

60

V

I

C

=25mA

h

FE

300

V

CE

=4V, I

C

=0.5A

V

CE

(sat)

1.0

V

I

C

=1A, I

B

=10mA

t

on

0.8

µ

s

V

CC

20V,

t

stg

3.0

µ

s

I

C

=1A,

t

f

1.2

µ

s

I

B1

=15mA, I

B2

=–30mA

Specification

min

typ

max

P

T

W

STA412A

3

2

1

0

I

C

  (A)

0

1

2

3

4

5

6

V

CE

  (V)

I

B

=12mA

8mA

5mA

3mA

2mA

1mA

0.5mA

2000

1000

500

100

0.01

0.05

0.1

0.5

1

3

typ

h

FE

I

C

  (A)

(V

CE

=4V)

2000

1000

500

100

h

FE

0.01

0.05 0.1

0.5

1

3

I

C

  (A)

(V

CE

=4V)

Ta=125

°

C

75

°

–30

°

C

25

°

C

1.5

1.0

0.5

0

V

BE

  (sat)

V

CE

  (sat)

(I

C

 / I

B

=20)

V

CE

 (sat), V

BE

 (sat) (V)

0.01

0.1

1

5

0.5

0.05

I

C

  (A)

1.5

1.0

0.5

0

I

C

=3A

I

C

=2A

I

C

=1A

0.001

0.005 0.01

0.05 0.1

0.5

1

V

CE

  (sat) (V)

I

B

  (A)

3

2

1

0

0

0.5

1.0

1.5

I

C

  (A)

V

BE

  (V)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

20

10

5

1

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

10

5

1

0.5

0.1

0.05

3

5

10

50

100

I

C

  (A)

V

CE

  (V)

Single Pulse
Without Heatsink
T

a

=25

°

C

1m

s

10

m

s

2

3

4

5

6

7

8

9

10

1

NPN

General purpose

Absolute maximum ratings

External dimensions

D

 • • • 

STA (10-pin)

Equivalent circuit diagram

Electrical characteristics

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat), V

BE

(sat)-I

C

 Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

168

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

35

±

5

V

V

CEO

35

±

5

V

V

EBO

6

V

I

C

3

A

I

B

1

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=30V

I

EBO

10

µ

A

V

EB

=6V

V

CEO

30

40

V

I

C

=25mA

h

FE

500

V

CE

=4V, I

C

=0.5A

V

CE

(sat)

0.5

V

I

C

=1A, I

B

=5mA

Specification

min

typ

max

P

T

W

STA413A

2

3

10

1

4

5

6

7

8

9

3.0

2.0

1.0

0

0

1.0

2.0

3.0

I

C

  (A)

V

CE

  (V)

6mA

8mA

10mA

15mA

5mA

4mA

3mA

2mA

I

B

=1mA

5000

1000

500

100

(V

CE

=4V)

0.01

0.05

0.1

0.5

1

3

Ta=125

°

C

–55

°

C

25

°

C

h

FE

I

C

  (A)

75

°

C

1.2

0.01

V

CE

  (sat) (V)

I

C

  (A)

0.05

0.1

0.5

1

0.5

I

C

 / I

B

=

50

0

3

1.0

0

100

20

1.2

1

V

CE

  (sat) (V)

I

B

  (mA)

0.5

I

C

=3A

1.0

0

5

10

50 100

500 1000

2A

1A

0.5A

4.0

3.0

2.0

1.0

0

0

0.5

1.0

1.5

(V

CE

=4V)

I

C

  (A)

V

BE

  (V)

Ta=125

°

C

75

°

C

25

°

C

55

°

C

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

10.0

I

C

  (A)

 

V

CE

  (V)

5.0

1.0

0.5

0.2

5

2

10

50

10

m

s

1ms

100ms

DC  (T

C

=25

°

C)

Single Pulse
Without Heatsink
T

a

=25

°

C

5000

0.01

h

FE 

I

C

  (A)

1000

typ

0.05

0.1

0.5

1

3

500

100

(V

CE

=4V)

20.0

10.0

5.0

1.0

0.5

0.1

θ

j–

a

  (

°

C / W)

0.1

0.5 1.0

5.0 10

50100

5001000

5000

PW  (mS)

NPN

With built-in avalanche diode

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

169

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–60

V

V

CEO

–60

V

V

EBO

–6

V

I

C

–3

A

I

CP

–6 (PW

10ms, D

u

50%)

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–100

µ

A

V

CB

=–60V

I

EBO

–100

µ

A

V

EB

=–6V

V

CEO

–60

V

I

C

=–25mA

h

FE

40

V

CE

=–4V, I

C

=–1A

V

CE

(sat)

–1.0

V

I

C

=–2A, I

B

=–0.2A

t

on

0.25

µ

s

V

CC

–12V,

t

stg

0.75

µ

s

I

C

=–2A,

t

f

0.25

µ

s

I

B1

=–I

B2

=–0.2A

Specification

min

typ

max

P

T

W

STA421A

–6

0

–1

–2

0

–1

–2

–3

–4

–3

V

CE

  (V)

I

C

  (A)

–4

–5

I

B

=–

80

m

A

–60mA

–50m

A

–40mA

–30mA

–20mA

–10mA

–5mA

–0.01

I

C

  (A)

(V

CE

=–4V)

–0.1

–1

–4

–0.5

–0.05

typ

20

100

50

500

h

FE

–0.01

I

C

  (A)

–0.1

–1

–4

–0.5

–0.05

20

100

50

500

h

FE

(V

CE

=–4V)

Ta=125

°

C

75

°

C

25

°

C

–30

°

C

–1.0

–0.05

I

C

  (A)

–0.1

–0.5

–1

0

–3

–0.5

V

CE

 (sat), V

BE

 (sat) (V)

V

BE

 (sat)

V

CE

 (sat)

(I

C

 / I

B

=10)

–0.01

I

B

  (A)

–0.1

–1

–0.5

–0.05

0

–1.0

–0.5

–1.5

V

CE

  (sat)

I

C

=–3A

–2A

–1A

0

V

BE

  (V)

–0.5

(V

CE

=–4V)

–1.5

–1.0

0

–2

–3

–1

–4

I

C

  (A)

T

a

=

1

2

5

°

C

7

5

°

C

2

5

°

C

3

0

°

C

1

PW  (mS)

5

1000

500

100

50

10

5

1.0

10

0.5

20

θ

j–

a

  (

°

C / W)

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

–3

–5

V

CE

  (V)

–10

–50

–100

–1

–5

–0.05

–0.1

–0.5

–10

I

C

  (A)

1ms

10ms

Single Pulse
Without Heatsink
T

a

=25

°

C

2

8

9

10

1

6

7

4

5

3

PNP

General purpose

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat), V

BE

(sat)-I

C

 Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

External dimensions

D

 • • • 

STA (10-pin)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

170

Characteristic curves

(T

a

=25

°

C)

Symbol

Unit

V

CBO

60

–60

V

V

CEO

60

–60

V

V

EBO

6

–6

V

I

C

3

–3

A

I

CP

6 (PW

10ms, D

u

50%)

–6 (PW

10ms, D

u

50%)

A

P

T

4 (T

a

=25

°

C)

W

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

–40 to +150

°

C

STA431A

Ratings

NPN

PNP

0

0

1

2

4

3

1

2

3

V

CE

  (V)

I

C

  (A)

5

4

6

I

B

=7

0m

A

60mA

50mA

40mA

30mA

20mA

10mA

5mA

0.01

I

C

  (A)

0.1

1

4

0.5

0.05

20

100

50

500

h

FE

(V

CE

=4V)

typ

0

V

BE

  (V)

0.5

1.5

1.0

0

2

3

1

4

I

C

  (A)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

0

–1

–2

0

–1

–2

–3

–4

–3

V

CE

  (V)

I

C

  (A)

–4

–5

–6

I

B

=–

80mA

–60mA

–50

mA

–40mA

–30mA

–20mA

–10mA

–5mA

–0.01

I

C

  (A)

–0.1

typ

–1

–4

–0.5

–0.05

20

100

50

500

h

FE

(V

CE

=–4V)

0

V

BE

  (V)

–0.5

–1.5

–1.0

0

–2

–3

–1

–4

I

C

  (A)

(V

CE

=–4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

6

10

7

9

8

3

5

2

4

1

PNP + NPN

H-bridge

0.01

I

C

  (A)

0.1

1

0.5

4

0.05

20

100

50

500

h

FE

(V

CE

=4V)

Ta=125

°

C

75

°

C

25

°

C

–30

°

C

–0.01

I

C

  (A)

0.1

–1

–4

–0.5

–0.05

20

100

50

500

h

FE

(V

CE

=–4V)

Ta=125

°

C

75

°

C

25

°

C

–30

°

C

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Equivalent circuit diagram

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

171

Characteristic curves

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

100

µ

A

V

CB

=60V

–100

µ

A

V

CB

=–60V

I

EBO

100

µ

A

V

EB

=6V

–100

µ

A

V

EB

=–6V

V

CEO

60

V

I

C

=25mA

–60

V

I

C

=–25mA

h

FE

40

V

CE

=4V, I

C

=1A

40

V

CE

=–4V, I

C

=–1A

V

CE

(sat)

1.0

V

I

C

=2A, I

B

=0.2A

–1.0

V

I

C

=–2A, I

B

=–0.2A

t

on

0.2

µ

s

V

CC

12V,

0.25

µ

s

V

CC

–12V,

t

stg

1.0

µ

s

I

C

=2A,

0.75

µ

s

I

C

=–2A,

t

f

0.3

µ

s

I

B1

=–I

B2

=0.2A

0.25

µ

s

I

B1

=–I

B2

=–0.2A

0.005

I

B

  (A)

0.1

1

0.5

0.05

0.01

0

1.0

0.5

1.5

V

CE

  (sat) (V)

I

C

=3A

2A

1A

5

V

CE

  (V)

10

50

100

1

5

0.05

0.1

0.5

10

I

C

  (A)

3

1ms

10ms

Single Pulse
Without Heatsink
T

a

=25

°

C

1

PW  (mS)

5

1000

500

100

50

10

5

1.0

10

0.5

20

θ

j–

a

  (

°

C / W)

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

–0.005

I

B

  (A)

–0.1

–1

–0.5

–0.05

–0.01

0

–1.0

–0.5

–1.5

V

CE

  (sat) (V)

I

C

=3A

2A

1A

–5

V

CE

  (V)

–10

–50

–100

–1

–5

–0.05

–0.1

–0.5

–10

I

C

  (A)

–3

1ms

10ms

Single Pulse
Without Heatsink
T

a

=25

°

C

1.0

0.05

 I

C

  (A)

0.5

0

0.1

0.5

1

V

CE

 (sat) 

• V

BE

 (sat) (V)

3

V

CE

 (sat)

V

BE

 (sat)

(I

C

 / I

B

=10)

–1.0

–0.05

–0.5

0

–0.1

–0.5

–1

 V

CE

 (sat) 

• V

BE

 (sat) (V)

–3

I

C

  (A)

(I

C

 / I

B

=10)

V

BE

 (sat)

V

CE

 (sat)

STA431A

P

T

-T

a

 Characteristics

θ

j-a

-PW Characteristics

Electrical characteristics

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

V

CE

(sat), V

BE

(sat)-I

C

 Characteristics (Typical)

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

172

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

STA434A

R

1

: 2k

Ω 

typ  R

2

: 150

Ω 

typ  R

3

: 3k

Ω 

typ  R

4

: 200

Ω 

typ

3

2

7

5

9

6

R

1

R

2

1

4

8

10

R

3

R

4

(T

a

=25

°

C)

Symbol

Unit

V

CBO

80

–60

V

V

CEO

60

–60

V

V

EBO

6

–6

V

I

C

4

–4

A

I

CP

8 (PW

10ms, D

u

50%)

–8 (PW

10ms, D

u

50%)

A

P

T

4 (T

a

=25

°

C)

W

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

–40 to +150

°

C

Ratings

NPN

PNP

0

2

0

2

4

6

V

CE

  (V)

I

C

  (A)

4

6

I

B

=4.0mA

2.0m

A

1.2m

A

0.8m

A

0.6mA

0.5mA

0.4mA

0.03

0.1

0.05

I

C

  (A)

4

0.5

1

30

50

100

10000

5000

500

1000

20000

h

FE

typ

(V

CE

=4V)

20000

10000

5000

1000

500

0.05

0.1

0.5

1

4

h

FE

I

C

  (A)

100

50

30

T

a

=125

°

C

(V

CE

=4V constant)

25

°

C

–30

°

C

0

V

BE

  (V)

1

2

0

2

3

1

4

I

C

  (A)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

–6

–5

–4

–3

–2

–1

0

0

–1

–2

–3

–4

–5

–6

I

C

  (A)

V

CE

  (V)

I

B

=

–2.3mA

–1

.8m

A

–1.5m

A

–1.2m

A

–1.0m

A

–0.8m

A

10000

5000

1000

500

100

50

20

(V

CE

=–4V)

typ

–0.02

–0.05

–0.1

–0.5

–1

–4

h

FE

I

C

  (A)

–0.02

I

C

  (A)

–0.05

–0.5

–4

h

FE

10000

–0.1

–1

5000

1000

500

100

50

20

T

a

=125

°

C

25

°

C

–30

°

C

(V

CE

=4V constant)

–4

–3

–2

–1

0

0

–1

–2

–3

I

C

  (A)

V

BE

  (V)

(V

CE

=–4V)

Ta=125

°

C

75

°

C

25

°

C

30

°

C

PNP + NPN Darlington

H-bridge

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

173

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

Safe Operating Area (SOA)

Characteristic curves

STA434A

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

100

µ

A

V

CB

=80V

–100

µ

A

V

CB

=–60V

I

EBO

10

mA

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

60

V

I

C

=10mA

–60

V

I

C

=–10mA

h

FE

1000

V

CE

=4V, I

C

=3A

1000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

2.0

V

I

C

=3A, I

B

=10mA

–2.0

V

I

C

=–2A, I

B

=–10mA

t

on

1.0

µ

s

V

CC

30V,

0.4

µ

s

V

CC

–30V,

t

stg

4.0

µ

s

I

C

=3A,

0.8

µ

s

I

C

=–3A,

t

f

1.5

µ

s

I

B1

=–I

B2

=10mA

0.6

µ

s

I

B1

=–I

B2

=–10mA

0.5

0.2

I

B

  (mA)

10

100

50

5

1

0

2

1

3

V

CE

  (sat) (V)

I

C

=4A

3A

2A

1A

1

PW  (mS)

5

1000

500

100

50

10

5

1.0

10

0.5

20

θ

j–

a

  (

°

C / W)

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

Without Heatsink

100

×

100

×

2

25

×

50

×

2

–10

–3

V

CE

  (V)

–10

–50

 I

C

  (A)

–5

–1

–0.5

–0.1

–100

–5

1ms

10ms

Single Pulse
Without Heatsink
T

a

=25

°

C

–3

–2

–1

0

–0.5

–0.1

–5

–10

–50

I

C

=–4A

I

C

=–2A

I

C

=–1A

I

B

  (mA)

V

CE

  (sat) (V)

–10

–3

V

CE

  (V)

–10

–50

I

C

  (A)

–5

–1

–0.5

–0.1

–100

–5

–0.07

1ms

10ms

Single Pulse
Without Heatsink
T

a

=25

°

C

2.0

I

C

  (A)

1.0

0

0.1

0.5

1

V

CE

  (sat) (V)

4

125

°

C

75

°

C

25

°

C

T

a

=–30

°

C

(I

C

 / I

B

=1000)

–2

–0.5

 I

C

  (A)

–1

0

–1

V

CE

  (sat) (V)

–4

T

a

=–30

°

C

125

°

C

25

°

C

(I

C

 / I

B

=1000)

Electrical characteristics

P

T

-T

a

 Characteristics

θ

j-a

-PW Characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

174

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

65

±

15

V

V

CEO

65

±

15

V

V

EBO

6

V

I

C

4

A

I

CP

8 (PW

10ms, D

u

50%)

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

100

µ

A

V

CB

=50V

I

EBO

10

mA

V

EB

=6V

V

CEO

50

65

80

V

I

C

=10mA

h

FE

1000

V

CE

=4V, I

C

=3A

V

CE

(sat)

2.0

V

I

C

=3A, I

B

=10mA

t

on

1.0

µ

s

V

CC

30V,

t

stg

4.0

µ

s

I

C

=3A,

t

f

1.5

µ

s

I

B1

=–I

B2

=10mA

Specification

min

typ

max

P

T

W

STA435A

5

4

3

2

1

0

0

1

2

3

4

1.0mA

0.8mA

0.6mA

0.5mA

0.4mA

0.3mA

I

B

=2

.0m

A

V

CE

  (V)

I

C

  (A)

20000

0.05

0.1

1

4

I

C

  (A)

10000

5000

1000

500

100

50

0.5

 

h

FE

(V

CE

=4V)

typ

20000

10000

5000

1000

500

0.05

0.1

0.5

1

4

h

FE

I

C

  (A)

100

(V

CE

=4V)

25

°

C

–30

°

C

T

a

=125

°

C

2

I

C

  (A)

1

0

0.1

0.5

1

V

CE

  (sat) (V)

4

125˚C

T

a

=–30

°

C

25˚C

(I

C

 / I

B

=1000)

3

2

1

0

0.2

0.5

1

5

10

50

100

V

CE

  (sat) (V)

I

B

  (mA)

I

C

=4A

3A

2A

1A

30

10

5

1.0

0.5

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (ms)

5

1

0.5

0.1

0.05

3

5

10

50

100

V

CE

  (

V)

I

C

   (A)

100

µ

s

1ms

10

m

s

Single Pulse
Without Heatsink
T

a

=25

°

C

3

2

1

R

1

R

2

5

4

7

6

10

9

8

R

1

: 3k

Ω 

typ  R

2

: 150

Ω 

typ

NPN Darlington

With built-in avalanche diode

0

1

V

BE

  (V)

2

3

4

2

1

0

I

C

  (A)

(V

CE

=–4V)

T

a

=125

°

C

7

5

°

C

25

°

C

30

°

C

–40

0

40 50

80

120

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

Without Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

176

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

STA457C

R

1

: 3k

Ω 

typ  R

2

: 200

Ω 

typ  R

3

: 2k

Ω 

typ  R

4

: 150

Ω  

typ

3

1

2

R

1

R

2

5

4

7

6

9

10

8

R

3

R

4

(T

a

=25

°

C)

Symbol

Unit

V

CBO

60

–60

V

V

CEO

60

–60

V

V

EBO

6

–6

V

I

C

4

–4

A

I

CP

8 (PW

10ms, D

u

50%)

–8 (PW

10ms, D

u

50%)

A

P

T

4 (T

a

=25

°

C)

W

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

–40 to +150

°

C

Ratings

NPN

PNP

0

2

0

2

4

6

V

CE

  (V)

I

C

  (A)

4

6

I

B

=4.0mA

2.0m

A

1.2mA

0.8mA

0.6mA

0.5mA

0.4mA

0.03

0.1

0.05

I

C

  (A)

4

0.5

1

30

50

100

10000

5000

500

1000

20000

h

FE

typ

(V

CE

=4V)

20000

10000

5000

1000

500

0.05

0.1

0.5

1

4

 h

FE

 

I

C

  (A)

100

T

a

=125

°

C

25

°

C

–30

°

C

(V

CE

=4V)

0

V

BE

  (V)

1

2

0

2

3

1

4

I

C

  (A)

(V

CE

=4V)

T

a

=125

°

C

7

5

°

C

2

5

°

C

3

0

°

C

–6

–5

–4

–3

–2

–1

0

0

–1

–2

–3

–4

–5

–6

I

C

  (A)

V

CE

  (V)

I

B

=–

2.3m

A

–1.8mA

–1.5mA

–1.2mA

–1.0mA

–0.8mA

10000

5000

1000

500

100

50

20

(V

CE

=–4V)

typ

–0.02

–0.05

–0.1

–0.5

–1

–4

h

FE

I

C

  (A)

–0.02

 I

C

  (A)

–0.05

–0.5

–4

h

FE

10000

–0.1

–1

5000

1000

500

100

50

20

T

a

=125

°

C

25

°

C

–30

°

C

(V

CE

=4V)

–4

–3

–2

–1

0

0

–1

–2

–3

I

C

  (A)

V

BE

  (V)

(V

CE

=–4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

PNP + NPN Darlington

H-bridge

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

177

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

Safe Operating Area (SOA)

Characteristic curves

STA457C

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=60V

–10

µ

A

V

CB

=–60V

I

EBO

10

mA

V

EB

=6V

–10

mA

V

EB

=–6V

V

CEO

60

V

I

C

=10mA

–60

V

I

C

=–10mA

h

FE

2000

V

CE

=4V, I

C

=2A

2000

V

CE

=–4V, I

C

=–2A

V

CE

(sat)

1.5

V

I

C

=2A, I

B

=4mA

–1.5

V

I

C

=–2A, I

B

=–4mA

V

BE

(sat)

2.0

V

–2.0

V

V

FEC

1.6

V

I

FEC

=2A

–1.6

V

I

FEC

=–2A

0.5

0.2

I

B

  (mA)

10

100

50

5

1

0

2

1

3

V

CE

  (sat) (V)

I

C

=4A

3A

2A

1A

1

PW  (mS)

5

1000

500

100

50

10

5

1.0

10

0.5

20

θ

j–

a

  (

°

C / W)

–10

–3

 V

CE

  (V)

–10

–50

I

C

  (A)

–5

–1

–0.5

–0.1

–100

–5

1m

s

10ms

Single Pulse
Without Heatsink
T

a

=25

°

C

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

–3

–2

–1

0

–0.5

–0.1

–5

–10

–50

I

C

=–4A

I

C

=–2A

I

C

=–1A

I

B

  (mA)

V

CE

  (sat) (V)

–10

–3

V

CE

  (V)

–10

–50

I

C

  (A)

–5

–1

–0.5

–0.1

–100

–5

1

m

s

10ms

Single Pulse
Without Heatsink
T

a

=25

°

C

2.0

I

C

  (A)

1.0

0

0.1

0.5

1

V

CE

  (sat) (V)

4

125

°

C

75

°

C

25

°

C

Ta=–30

°

C

(I

C

 / I

B

=1000)

–2

–0.5

 I

C

  (A)

–1

0

–1

V

CE

  (sat) (V)

–4

25

°

C

125

°

C

T

a

=–30

°

C

(I

C

 / I

B

=1000)

P

T

-T

a

 Characteristics

θ

j-a

-PW Characteristics

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

178

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

STA458C

(T

a

=25

°

C)

Symbol

Unit

V

CBO

50

–50

V

V

CEO

30

–30

V

V

EBO

6

–6

V

I

C

5

–5

A

I

CP

10(PW

10ms, D

u

50%)

–10(PW

10ms, D

u

50%)

A

I

B

1

–1

A

P

T

4 (T

a

=25

°

C)

W

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

–40 to +50

°

C

T

FSM

20 (Single half-cycle sinewave)

A

Ratings

NPN

PNP

0

0

2.0

4.0

8.0

6.0

1.0

3.0

2.0

V

CE

  (V)

I

C

  (A)

I

B

=150mA

90mA

70mA

50m

A

30mA

10mA

0.02

I

C

  (A)

1

10

5

0.5

0.1

0.5

20

100

50

500

h

FE

(V

CE

=1V)

typ

0.05

I

C

  (A)

0.5

1

10

5

0.1

20

100

50

500

h

FE

(V

CE

=1V)

75

°

C

25

°

C

–40

°

C

Ta=150

°

C

0

V

BE

  (V)

1.0

0.5

1.5

0

5.0

10.0

I

C

  (A)

(V

CE

=1V)

T

a

=150

°

C

75

°

C

4

0

°

C

25

°

C

0

0

–2.0

–4.0

–8.0

–6.0

–1.0

–3.0

–2.0

V

CE

  (V)

I

C

  (A)

I

B

=

150mA

–90mA

–70mA

–50mA

–30mA

–10mA

–0.02 –0.05

I

C

  (A)

–5

–10

–1

–0.5

–0.1

20

100

50

500

h

FE

(V

CE

=–1V)

typ

(V

CE

=–1V)

–0.05

I

C

  (A)

–0.5

–10

–5

–1

–0.1

20

100

50

500

h

FE

T

a

=150

°

C

75

°

C

25

°

C

–40

°

C

0

V

BE

  (V)

–0.5

–1.0

–1.5

0

–10.0

–5.0

I

C

  (A)

(V

CE

=–1V)

T

a

=150

°

C

75

°

C

25

°

C

40

°

C

R: 600

Ω 

Typ

1

R

4

3

2

7

8

6

9

10

5

PNP+NPN

H-bridge

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

179

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

Safe Operating Area (SOA)

Characteristic curves

STA458C

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=50V

–10

µ

A

V

CB

=–50V

I

EBO

20

mA

V

EB

=6V

–20

mA

V

EB

=–6V

V

CEO

30

V

I

C

=25mA

–30

V

I

C

=–25mA

h

FE

70

V

CE

=1V, I

C

=1A

70

V

CE

=–1V, I

C

=–1A

40

V

CE

=1V, I

C

=4A

40

V

CE

=–1V, I

C

=–4A

V

CE

(sat)

0.5

V

I

C

=3A, I

B

=0.1A

–0.5

V

I

C

=–3A, I

B

=–0.1A

t

on

0.3

µ

s

V

CC

12V,

0.3

µ

s

V

CC

–12V,

t

stg

0.5

µ

s

I

C

=3A,

0.5

µ

s

I

C

=–3A,

t

f

0.1

µ

s

I

B1

=–I

B2

=100mA

0.1

µ

s

I

B1

=–I

B2

=–100mA

t

rr

2.0

µ

s

I

F

=I

R

=100mA

2.0

µ

s

I

F

=I

R

=100mA

0.005

I

B

  (A)

0.05

1

0.5

0.1

0.001

0

1

2

V

CE

  (sat)

I

C

=5A

3A

2A

1A

1

PW  (mS)

5

1000

500

100

50

10

5

1.0

10

0.5

20

θ

j–

a

  (

°

C / W)

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

5

V

CE

  (V)

10

30

50

5

0.2

1

0.5

10

I

C

  (A)

2

1mSec

10mSec

Single Pulse
Without Heatsink
T

a

=25

°

C

–0.005

I

B

  (A)

–0.1

–1

–0.5

–0.05

–0.01

0

–1

–2

V

CE

  (sat) (V)

I

C

=–5A

–3A

–2A

–1A

–5

V

CE

  (V)

–10

–30

–50

–1

–5

–0.2

–0.5

–10

I

C

  (A)

–2

1

m

S

e

c

1

0

m

S

e

c

Single Pulse
Without Heatsink
T

a

=25

°

C

0.02

I

C

  (A)

1

0.5

20

10

5

0.1

0.05

0

1.0

0.5

1.5

V

CE

  (sat) (V)

(I

C

 / I

B

=20)

T

a

=150

°

C

75

°

C

25

°

C

–40

°

C

–0.02

I

C

  (A)

–1

–0.5

–20

–10

–5

–0.1

–0.05

0

–1.0

–0.5

–1.5

V

CE

  (sat) (V)

(I

C

 / I

B

=20)

Ta=150

°

C

75

°

C

25

°

C

–40

°

C

P

T

-T

a

 Characteristics

θ

j-a

-PW Characteristics

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

180

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

60

±

10

V

V

CEO

60

±

10

V

V

EBO

6

V

I

C

±

6

A

I

CP

±

10 (PW

1ms, D

u

50%)

A

3.2 (T

a

=25

°

C)

18 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Ratings

Unit

I

CBO

10

µ

A

V

CB

=50V

I

EBO

10

µ

A

V

EB

=6V

V

CEO

50

60

70

V

I

C

=50mA

h

FE

700

1500

3000

V

CE

=1V, I

C

=1A

V

CE

(sat)

0.09

0.15

V

I

C

=1.5A, I

B

=15mA

V

FEC

1.25

1.5

V

I

FEC

=6A

E

S/B

200

mJ

L=10mH, Single pulse

Specification

min

typ

max

P

T

W

STA460C

3

2

4

8

7

9

V

CE

  (V)

I

C

  (A)

1

2

3

4

5

0

20m

A

10m

A

5mA

3mA

1mA

I

B

=30mA

1

0

2

3

4

5

6

9

10

7

8

(V

CE

=1V)

I

C

  (A)

5000

1000

500

100

50

30

0.01

0.05 0.1

0.5

1

5

10

typ

h

FE

 

(V

CE

=1V)

I

C

  (A)

h

FE

5000

1000

500

100

50

30

0.01

0.05 0.1

0.5

1

5

10

T

a

=125

°

C

–55

°

C

25

°

C

75

°

C

(I

C

 / I

B

=100)

I

C

  (A)

V

CE

  (sat) (V)

0.75

0.5

0.25

0

0.01

0.05 0.1

0.5

1

5

10

T

a

=–55˚C

25˚C

75˚C

125˚C

I

B

  (mA)

V

CE

  (sat) (V)

0.75

0.5

0.25

0

1

5

10

50

100

500

I

C

=3A

1.5A

0.5A

(V

CE

=1V)

V

BE

  (V)

I

C

  (A)

6

4

0

0

0.5

1.0

1.5

5

3

2

1

55

°

C

2

5

°

C

75

°

C

T

a

=125

°

C

PW  (mS)

0.5

1000 2000

500

10

100

50

5

1

0.5

1

0.1

5

0.05

20

10

θ

j–

a

  (

°

C / W)

0.1

–55

T

a

  (

°

C)

0

50

150

100

0

20

15

10

5

P

T

  (W)

With Silicone Grease
Natural Cooling

W

ith In

finite H

eatsink

Without Heatsink

V

CE

  (V)

20

5

0.05

0.5

1

10

50

10

1

0.5

0.1

I

C

  (A)

5

100

0

.5

m

s

1

m

s

1

0

m

s

Single Pulse
Without Heatsink
T

a

=25

°

C

NPN Darlington

With built-in avalanche diode

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

181

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 

 

Temperature Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

60

±

10

V

V

CEO

60

±

10

V

V

EBO

6

V

I

C

2

A

I

CP

4 (PW

1ms, D

u

25%)

A

I

B

0.5

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=50V

I

EBO

5

mA

V

EB

=6V

V

CEO

50

60

70

V

I

C

=10mA

h

FE

2000

5000

10000

V

CE

=4V, I

C

=1A

V

CE

(sat)

1.1

1.5

V

V

BE

(sat)

1.8

2.2

V

V

FEC

1.3

1.8

V

I

FEC

=1A

t

on

0.5

µ

s

V

CC

30V,

t

stg

4.0

µ

s

I

C

=1A,

t

f

1.0

µ

s

I

B1

=–I

B2

=2mA

f

T

50

MHz

V

CE

=12V, I

E

=–0.1A

C

ob

25

pF

V

CB

=10V, f=1MHz

P

T

W

STA471A

I

C

=1A, I

B

=2mA

R

1

: 3.5k

 typ  R

2

: 200

 typ

2

1

3

R

1

R

2

4

5

6

7

8

9

10

Specification

min

typ

max

0

1

2

3

4

I

C

  (A)

0

1

2

3

V

CE

  (V)

5

4

6

0.3mA

0.4mA

0.6mA

2.0m

A

5.0mA

1.0m

A

I

B

=10.0mA

0.02

I

C

  (A)

0.1

0.05

1

0.5

4

30

50

1000

100

500

10000

5000

h

FE

(V

CE

=4V)

Typ

(V

CE

=4V)

0.02

0.05

0.1

0.5

1

4

 I

C

  (A)

10000

5000

1000

500

100

50

30

 h

FE

T

a

=125

°

C

75

°

C

–3

0

°

C

25

°

C

(I

C

 / I

B

=1000)

3

2

0
0.2

0.5

1

I

C

  (A)

V

CE

  (sat) (V

)

1

3

75

°

C

25

°

C

30

°

C

Ta=125

°

C

0.1

I

B

  (mA)

3

1

0.5

0

1

3

2

V

CE

  (sat) (V)

(I

C

=1A)

T

a

=125

°

C

30

°

C

75

°

C

25

°

C

V

BE

  (V)

0

0

3

2

1

4

I

C

  (A)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

3

2

1

5

1

0.5

0.1

0.05

3

5

10

50

100

V

CE

  (

V)

I

C

  (A)

Single Pulse
Without Heatsink
T

a

=25

°

C

1

0

0

µ

s

1m

s

10ms

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

PW  (mS)

0.5

100

1000

500

50

10

5

1

5

1

0.5

10

30

θ

j–

a

  (

°

C / W)

0.2

NPN Darlington

With built-in avalanche diode

Absolute maximum ratings

External dimensions

D

 • • • 

STA (10-pin)

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

182

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–60

V

V

CEO

–60

V

V

EBO

–6

V

I

C

–2

A

I

CP

–4 (PW

1ms, D

u

25%)

A

I

B

–0.5

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–10

µ

A

V

CB

=–60V

I

EBO

–5

mA

V

EB

=–6V

V

CEO

–60

V

I

C

=–10mA

h

FE

2000

4000

10000

V

CE

=–4V, I

C

=–1A

V

CE

(sat)

–1.2

–1.5

V

V

BE

(sat)

–1.9

–2.2

V

V

FEC

–1.3

–1.8

V

I

FEC

=–1A

t

on

0.4

µ

s

V

CC

–30V,

t

stg

1.0

µ

s

I

C

=–1A,

t

f

0.4

µ

s

I

B1

=–I

B2

=–2mA

f

T

100

MHz

V

CE

=12V, I

E

=–0.1A

C

ob

30

pF

V

CB

=10V, f=1MHz

Specification

min

typ

max

P

T

W

STA472A

I

C

=–1A, I

B

=–2mA

R

1

: 4k

 typ  R

2

: 100

 typ

1

R

1

R

2

2

3

4

5

6

7

8

9

10

0

0

–1

–2

–4

–3

–1

–2

–3

V

CE

  (V)

I

C

  (A)

–5

–4

–6

I

B

=

10.0mA

–5.0mA

–2.0mA

–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.5mA

–0.4mA

–0.3mA

–0.02

I

C

  (A)

–0.1

–0.05

–1

–0.5

–4

50

1000

100

500

10000

5000

h

FE

(V

CE

=–4V)

typ

(V

CE

=–4V)

10000

5000

1000

500

100

50
–0.02

–0.05

–0.1

–0.5

–1

–4

I

C

  (A)

h

FE

–30

°

C

T

a

=125

°

C

75

°

C

25

°

C

(I

C

 / I

B

=1000)

–3

–2

0

–0.2

–0.5

–1

 

I

C

  (A)

V

CE

  (sat) (V)

–1

–4

75

°

C

25

°

C

T

a

=–30

°

C

125

°

C

–0.1

I

B

  (mA)

–5

–1

–0.5

0

–1

–3

–2

V

CE

  (sat) (V)

(I

C

=–1A)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

0

V

BE

  (V)

–2

–1

–3

0

–3

–2

–1

–4

I

C

  (A)

(V

CE

=–4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

PW  (mS)

0.5

100

1000

500

50

10

5

1

5

0.5

1

10

20

θ

j–

a

  (

°

C / W)

0.2

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

–5

–1

–0.5

–0.1

–0.05

–0.03

–3

–5

–10

–50

–100

V

CE

  (V)

I

C

  (A)

10

0

µ

s

1m

s

10ms

Single Pulse
Without Heatsink
T

a

=25

°

C

PNP Darlington

General purpose

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

183

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

120

V

V

CEO

100

V

V

EBO

6

V

I

C

2

A

I

CP

4 (PW

1ms, D

u

25%)

A

I

B

0.5

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=120V

I

EBO

5

mA

V

EB

=6V

V

CEO

100

V

I

C

=10mA

h

FE

2000

5000

12000

V

CE

=4V, I

C

=1A

V

CE

(sat)

1.1

1.5

V

V

BE

(sat)

1.8

2.2

V

V

FEC

1.3

1.8

V

I

FEC

=1A

t

on

0.5

µ

s

V

CC

30V,

t

stg

4.5

µ

s

I

C

=1A,

t

f

1.2

µ

s

I

B1

=–I

B2

=2mA

f

T

50

MHz

V

CE

=12V, I

E

=–0.1A

C

ob

20

pF

V

CB

=10V, f=1MHz

P

T

W

STA473A

I

C

=1A, I

B

=2mA

Specification

min

typ

max

0

0

1

2

4

3

1

2

3

V

CE

  (V)

I

C

  (A)

5

4

6

I

B

-10.0mA

4.0m

A

2.0m

A

1.2m

A

0.6mA

0.4mA

0.3mA

0.02

I

C

  (A)

(V

CE

=4V)

0.1

0.05

1

0.5

4

30

50

1000

100

500

20000

10000

5000

h

FE

typ

(V

CE

=4V)

20000

10000

5000

1000

500

100

50

30

0.02

0.05

0.1

0.5

1

4

I

C

  (A)

h

FE

–30

°

C

T

a

=125

°

C

75

°

C

25

°

C

(I

C

 / I

B

=1000)

3

2

0
0.2

0.5

1

I

C

  (A)

V

CE

  (sat) (V)

1

4

75

°

C

25

°

C

30

°

C

Ta=125

°

C

0.1

I

B

  (mA)

5

1

0.5

0

2

1

3

V

CE

  (sat) (V)

(I

C

=1A)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

0

V

BE

  (V)

2

1

3

0

3

2

1

4

I

C

  (A)

(V

CE

=4V)

T

a

=

1

2

5

°

C

7

5

°

C

2

5

°

C

3

0

°

C

PW  (mS)

0.5

100

1000

500

50

10

5

1

5

1

0.5

10

20

θ

j–

a

  (

°

C / W)

0.2

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

5

1

0.5

0.1

0.05

0.03

3

5

10

50

100

V

CE

  (V)

I

C

  (A)

100

µ

s

1m

s

10ms

200

Single Pulse
Without Heatsink
T

a

=25

°

C

2

1

3

R

1

R

2

4

5

6

7

8

9

10

R

1

: 4k

Ω 

Typ  R

2

: 150

Ω 

Typ

NPN Darlington

General purpose

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

184

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

100

±

15

V

V

CEO

100

±

15

V

V

EBO

6

V

I

C

2

A

I

CP

4 (PW

1ms, D

u

25%)

A

I

B

0.5

A

4 (T

a

=25

°

C)

20 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=85V

I

EBO

5

mA

V

EB

=6V

V

CEO

85

100

115

V

I

C

=10mA

h

FE

2000

5000

12000

V

CE

=4V, I

C

=1A

V

CE

(sat)

1.5

V

V

BE

(sat)

2.2

V

V

FEC

1.8

V

I

FEC

=1A

t

on

0.6

µ

s

V

CC

30V,

t

stg

3.0

µ

s

I

C

=1A,

t

f

1.0

µ

s

I

B1

=–I

B2

=2mA

P

T

W

STA475A

I

C

=1A, I

B

=2mA

Specification

min

typ

max

R

1

: 4k

Ω 

typ  R

2

: 150

Ω 

typ

2

1

3

R

1

R

2

4

5

6

7

8

9

10

1

0

2

4

5

6

V

CE

  (V)

3

4

I

C

  (A)

1

0

2

3

0.2mA

0.3mA

0.5mA

1mA

2mA

5mA

I

B

=10m

A

(V

CE

=4V)

0.03

I

C

  (A)

0.1

0.5

1

4

0.05

20000

10000

5000

1000

500

100

50

h

FE

T

a

=125

°

C

–30

°

C

75

°

C

25

°

C

 V

CE  (sat)

 (V)

(I

C

 / I

B

=1000)

0.3

I

C

  (A)

0.5

1

4

0

1

2

3

125˚C

75

°

C

25

°

C

T

a

=–30

°

C

0.1

I

B

  (mA)

V

CE

  (sat) (V)

0

1

2

3

0.5

1

5

10

50 100

I

C

=4A

I

C

=2A

I

C

=1A

4

I

C

  (

A)

0

1

2

3

V

BE

  (V)

1

2

3

(V

CE

=4V)

0

3

0

°

C

2

5

°

C

75

°

C

T

a

=125

°

C

PW  (mS)

100

50

1000

500

5

10

5

1

10

20

θ

j–

a

  (

°

C / W)

1

–40

0

50

100

150

20

16

12

8.0

4.0

0

 

P

T

  (W)

 

T

a

  (

°

C)

24

With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm

With Infinite Heatsink

100

×

100

×

2

50

×

50

×

2

25

×

50

×

2

Without Heatsink

NPN Darlington

With built-in avalanche diode

5

I

C

  (A)

3

0.03

5

10

V

CE

  (V)

1

0.5

0.1

0.05

50

100

200

Single Pulse
Without Heatsink
T

a

=25

°

C

10m

s

100

µ

s

1ms

50

µ

s

20000

10000

5000

1000

500

100

0.03

I

C

  (A)

h

FE

50

0.1

0.5

1

4

0.05

Typ

(V

CE

=4V)

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

185

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

60

±

10

V

V

CEO

60

±

10

V

V

EBO

6

V

I

C

1

A

I

CP

2.5 (PW

1ms, D

u

25%)

A

I

B

0.5

A

4 (T

a

=25

°

C)

16 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=50V

I

EBO

3

mA

V

EB

=6V

V

CEO

50

60

70

V

I

C

=1mA

h

FE

2000

5000

10000

V

CE

=4V, I

C

=0.5A

V

CE

(sat)

1.0

1.5

V

V

BE

(sat)

1.6

2.2

V

V

FEC

1.4

1.8

V

I

FEC

=0.5A

t

on

0.5

µ

s

V

CC

30V,

t

stg

2.5

µ

s

I

C

=0.5A,

t

f

1.0

µ

s

I

B1

=–I

B2

=1mA

f

T

50

MHz

V

CE

=12V, I

E

=–0.1A

C

ob

14

pF

V

CB

=10V, f=1MHz

Specification

min

typ

max

P

T

W

STA481A

I

C

=0.5A, I

B

=1mA

R

1

: 6k

Ω 

typ  R

2

: 400

Ω 

typ

2

1

3

R

1

R

2

4

5

6

7

8

9

10

2.5

I

C

  (A)

V

CE

  (V)

0

1

2

3

2

1.5

1

0.5

4

5

6

0

I

B

=50m

A

10m

A

5m

A

2m

A

1m

A

0.5mA

0.3mA

10000

h

FE

I

C

  (A)

0.01

0.1

1

2.5

1000

100

30

typ

(V

CE

=4V)

10000

h

FE

I

C

  (A)

0.01

0.1

1

(V

CE

=4V)

1000

100

30

2.5

125

°

C

75

°

C

25

°

C

–30

°

C

3

2

1

0

0.01

0.1

1

5

(I

B

=2mA)

I

C

  (A)

V

CE

  (sat) (V)

125

°

C

75

°

C

25

°

C

–30

°

C

3

2

1

0

0.05 0.1

1

100

10

(I

C

=0.5A)

I

B

  (mA)

V

CE

  (

sat) (V)

125

°

C

75

°

C

25

°

C

–30

°

C

2.5

I

C

  (A)

V

BE

  (V)

0

1

2

3

(V

CE

=4V)

2

1.5

1

0.5

0

125

°

C

75

°

C

2

5

°

C

30

°

C

PW  (mS)

1000

10

100

1

10

5

30

θ

j–

a

  (

°

C / W)

1

20

P

T

  (W)

Ta  (

°

C)

–40

0

50

150

15

10

5

0

100

With Silicone Grease
Natural Cooling
Heatsink: Aluminum

With Infinite Heatsink

Without Heatsink

5

I

C

  (A)

V

CE

  (V)

1

10

100

1

0.1

0.01

100

µ

S

1mS

10mS

Single Pulse
Without Heatsink
T

a

=25

°

C

NPN Darlington

With built-in avalanche diode

Absolute maximum ratings

External dimensions

D

 • • • 

STA (10-pin)

Equivalent circuit diagram

Electrical characteristics

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

186

Characteristic curves

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

100

±

15

V

V

CEO

100

±

15

V

V

EBO

6

V

I

C

1

A

I

CP

2.5 (PW

1ms, D

u

25%)

A

I

B

0.5

A

4 (T

a

=25

°

C)

16 (T

c

=25

°

C)

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

ymbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=85V

I

EBO

3

mA

V

EB

=6V

V

CEO

85

100

115

V

I

C

=1mA

h

FE

2000

5000

10000

V

CE

=4V, I

C

=0.5A

V

CE

(sat)

1.0

1.5

V

V

BE

(sat)

1.6

2.2

V

V

FEC

1.4

1.8

V

I

FEC

=0.5A

t

on

0.5

µ

s

V

CC

30V,

t

stg

2.5

µ

s

I

C

=0.5A,

t

f

1.0

µ

s

I

B1

=–I

B2

=1mA

f

T

50

MHz

V

CE

=12V, I

E

=–0.1A

C

ob

14

pF

V

CE

=10V, f=1MHz

P

T

W

STA485A

I

C

=0.5A, I

B

=1mA

Specification

min

typ

max

R

1

: 5k

Ω 

typ  R

2

: 400

Ω 

typ

2

1

3

R

1

R

2

4

5

6

7

8

9

10

2.5

I

C

  (A)

V

CE

  (V)

0

1

2

3

2

1.5

1

0.5

4

5

6

0

I

B

=

5m

A

2mA

1mA

0.5mA

0.3m

A

0.2m

A

10000

h

FE

I

C

  (A)

0.01

0.1

1

2.5

(V

CE

=4V)

1000

5000

100

500

20

50

typ

20000

10000

h

FE

I

C

  (A)

0.01

0.1

1

2.5

(V

CE

=4V)

1000

100

30

125

°

C

75

°

C

25

°

C

–30

°

C

3

2

1

0

0.01

0.1

1

5

(I

B

=2mA)

I

C

  (A)

V

CE

  (sat) (V)

125

°

C

75

°

C

25

°

C

–30

°

C

3

2

1

0

0.05 0.1

1

100

10

(I

C

=0.5A)

I

B

  (mA)

V

CE

  (sat) (V)

125

°

C

75

°

C

25

°

C

–30

°

C

2.5

I

C

  (A)

V

BE

  (V)

0

1

2

3

(V

CE

=4V)

2

1.5

1

0.5

0

125

°

C

75

°

C

25

°

C

30

°

C

PW  (mS)

1000

500

100

50

10

5

2

10

5

30

θ

j–

a

  (

°

C / W)

1

5

I

C

  (A)

V

CE

  (V)

1

10

200

1

0.1

0.01

100

µ

S

1mS

10mS

100

Single Pulse
Without Heatsink
T

a

=25

°

C

20

P

T

  (W)

Ta  (

°

C)

–40

0

50

150

15

10

5

0

100

With Silicone Grease
Natural Cooling
Heatsink: Aluminum

With Infinite Heatsink

Without Heatsink

NPN Darlington

With built-in avalanche diode

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

187

Characteristic curves

STA501A

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

10

V

I

D

±

5

A

I

D(

pulse

)

±

20 (PW

100

µ

s, D

u

1%)

A

4 (Ta=25

°

C)

W

20 (Tc=25

°

C)

W

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

10V

I

DSS

250

µ

A

V

DS

=60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

2.0

S

V

DS

=10V, I

D

=2.5A

0.15

0.20

V

GS

=10V, I

D

=2.5A

0.23

0.28

V

GS

=4V, I

D

=2.5A

Ciss

400

pF

V

DS

=25V,

Coss

160

pF

f=1.0MHz,

Crss

35

pF

V

GS

=0V

td

(

on

)

20

ns

I

D

=2.5A,

t

r

25

ns

V

DD

30V,

td

(

off

)

40

ns

R

L

=12

,

t

f

20

ns

V

GS

=5V, see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=5A, V

GS

=0V

t

rr

150

ns

I

SD

=

±

100mA

Specification

min

typ

max

R

DS(ON)

2

3

1

4

5

6

7

8

9

10

N-channel

General purpose

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Characteristic curves

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

188

Characteristic curves

STA504A

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

20

V

I

D

±

4

A

I

D(

pulse

)

±

8 (PW

100

µ

s, D

u

1%)

A

4 (Ta=25

°

C)

W

20 (Tc=25

°

C)

W

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=60V, V

GS

=0V

V

TH

2.0

4.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

1.2

S

V

DS

=10V, I

D

=2A

R

DS(ON)

0.33

0.45

V

GS

=10V, I

D

=2A

Ciss

120

pF

V

DS

=25V,

Coss

60

pF

f=1.0MHz,

Crss

14

pF

V

GS

=0V

V

SD

1.1

1.5

V

I

SD

=4A, V

GS

=0V

t

rr

100

ns

I

SD

=

±

100mA

Specification

min

typ

max

2

3

1

4

5

6

7

8

9

10

N-channel

General purpose

External dimensions

D

 • • • 

STA (10-pin)

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

189

Characteristic curves

STA505A

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

100

V

V

GSS

±

20

V

I

D

±

3

A

I

D(

pulse

)

±

12 (PW

100

µ

s, D

u

1%)

A

4 (Ta=25

°

C)

W

20 (Tc=25

°

C)

W

Tch

150

°

C

Tstg

 –40 to +150

°

C

P

T

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=100V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

2.0

3.0

S

V

DS

=10V, I

D

=1.5A

R

DS(ON)

0.35

0.50

V

GS

=10V, I

D

=1.5A

0.40

0.60

V

GS

=4V, I

D

=1.5A

Ciss

240

pF

V

DS

=25V,

Coss

60

pF

f=1.0MHz,

Crss

12

pF

V

GS

=0V

V

SD

1.0

1.5

V

I

SD

=3A, V

GS

=0V

t

rr

150

ns

I

SD

=

±

100mA

Specification

min

typ

max

2

3

1

4

5

6

7

8

9

10

N-channel

General purpose

Absolute maximum ratings

External dimensions

D

 • • • 

STA (10-pin)

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

190

Characteristic curves

STA506A

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

100

V

V

GSS

±

20

V

I

D

±

2

A

I

D(

pulse

)

±

5 (PW

100

µ

s, D

u

1%)

A

E

AS

*

5.6

mJ

4 (Ta=25

°

C)

W

20 (Tc=25

°

C)

W

Tch

150

°

C

Tstg

 –40 to +150

°

C

* : V

DD

=25V, L=2.2mH, I

L

=2A, unclamped, R

G

=50

, see Fig. E on page 15.

P

T

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=100V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

1.5

2.0

S

V

DS

=10V, I

D

=1A

0.55

0.80

V

GS

=10V, I

D

=1A

0.70

0.95

V

GS

=4V, I

D

=1A

Ciss

150

pF

V

DS

=25V,

Coss

45

pF

f=1.0MHz,

Crss

9

pF

V

GS

=0V

td

(

on

)

15

ns

I

D

=1A,

t

r

30

ns

V

DD

50V,

td

(

off

)

40

ns

R

L

=50

,

t

f

30

ns

V

GS

=5V, see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=2A, V

GS

=0V

t

rr

160

ns

I

SD

=

±

100mA

Specification

min

typ

max

R

DS(ON)

5

7

9

2

4

3

6

8

1

10

5

7

9

2

4

3

6

8

1

10

0

10

1

0

V

DS

  (V)

I

D

  (A)

5

4

2

3

2

4

6

8

4V

10V

V

GS

=3V

3.5V

5V

0

5

4

3

2

1

(V

DS

=10V)

25

°

C

125

°

C

0

2

6

4

T

C

=–40

°

C

V

GS

  (V)

I

D

  (A)

V

GS

=10V

V

GS

=4V

0

0

4

5

0.2

0.6

0.4

0.8

I

D

  (A)

R

DS  (ON)

 (

)

1

2

3

0.05

0.3

0.5

0.1

0.5

1

1

I

D

  (A)

Re  (yfs) (S)

5

5

T

C

=–40

°

C

(V

DS

=10V)

25

°

C

125

°

C

–40

0

0

50

100

150

1.0

0.5

1.5

R

DS  (ON)

  (

)

T

C

  (

°

C)

(I

D

=1A)

V

GS

=10V

V

GS

=4V

0

10

20

30

40

50

5

10

50

500

100

V

DS

  (V)

Capacitance  (pF)

V

GS

=0V

f=1MHz

Ciss

Crss

Coss

0

0

0.5

1.0

1.5

5

4

3

I

DR

  (A)

V

SD

  (V)

2

1

10V

4V

V

GS

=0V

0.5

1

5

10

50

100

0.1

0.5

1

5

10

 I    (A)

D

V      (V)

DS

D

I   (pulse) max

1ms

10

ms  (1shot)

D

S

   (

O

N

)

R

LIMITED      

100

µ

s

25

30

20

15

10

5

0

With Silicone Grease
Natural Cooling
Heatsink: Aluminum

0

50

100

150

T

a

  (

°

C)

P

T

  (W)

With Infinite Heatsink

Without Heatsink

N-channel

General purpose

External dimensions

D

 • • • 

STA (10-pin)

Equivalent circuit diagram

Absolute maximum ratings

Electrical characteristics

I

D

-V

DS

 Characteristics (Typical)

I

D

-V

GS 

Characteristics (Typical)

R

DS(ON)

-I

 Characteristics (Typical)

Re

(yfs)

-I

D

 Characteristics (Typical)

R

DS(ON)

-T

C

 Characteristics (Typical)

Capacitance-V

DS

 Characteristics (Typical)

I

DR

-V

SD

 Characteristics (Typical)

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

191

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SDA01

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–60

V

V

CEO

–60

V

V

EBO

–6

V

I

C

–1.5

A

I

CP

–2.5 (PW

1ms, D

u

10%)

A

I

B

–0.1

A

P

T

3 (T

a

=25

°

C)

W

T

j

150

°

C

T

stg

 –40 to +150

°

C

θ

j–a

 41.6

°

C/W

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–10

µ

A

V

CB

=–60V

I

EBO

–3

mA

V

EB

=–6V

V

CEO

–60

V

I

C

=–10mA

h

FE

2000

12000

V

CE

=–4V, I

C

=–1A

V

CE

(sat)

–1.4

V

V

BE

(sat)

–2.2

V

Specification

min

typ

max

I

C

=–1A, I

B

=–2mA

2

4

6

8

1

15,16

13,14

11,12

9,10

3

5

7

R

1

R

2

–6

–5

–4

–3

–2

–1

0

0

–0.5

–2.5

–2.0

–1.5

–1.0

V

CE

  (V)

I

C

  (A)

I

B

=–5mA

–2mA

–1.2mA

–1.0mA

–0.8m

A

–0.6mA

–0.5mA

–0.4mA

–0.3mA

10000

(V

CE

=–4V)

5000

1000

500

100

50

–0.03 –0.05

–0.1

–0.5

–1

–2.5

I

C

  (A)

h

FE

typ

10000

(V

CE

=–4V)

5000

1000

500

100

50

–0.03

–0.1

–0.5

–1

–2.5

I

C

  (A)

h

FE

–0.05

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

–3

–2

–1

0

I

C

  (A)

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

–0.2

–0.5

–1

–2.5

Ta=125

°

C

75

°

C

25

°

C

–30

°

C

–3

–2

–1

0

–0.1

–0.5

–1

–5

–10

–50

V

CE

  (sat) (V)

I

B

  (mA)

I

C

=–2A

I

C

=–1A

I

C

=–0.5A

–2.5

–2.0

–1.5

–1.0

–0.5

0

0

–1

–2

–3

V

BE

  (V)

I

C

  (A)

(V

CE

=–4V)

T

a

=

125

°

C

7

5

°

C

25

°

C

3

0

°

C

50

10

5

1

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

3

2

1

0

0

4

3

2

1

50

100

150

1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation

P

T

  (W)

Ta  (

°

C)

–5

–1

–0.5

–0.1

–0.05

–3

–5

–10

–50

–100

V

CE

  (V)

I

C

  (A)

Single Pulse
Without Heatsink
T

a

=25

°

C

100

µ

s

1ms

10ms

PNP Darlington

General purpose

R

1

: 4k

Ω 

typ  R

2

: 100

Ω 

typ

Absolute maximum ratings

External dimensions

E

 • • • 

SD

Electrical characteristics

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

192

SDA05

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

–60

V

V

CEO

–60

V

V

EBO

–6

V

I

C

–4

A

I

CP

–6 (PW

1ms, D

u

50%)

A

I

B

–0.5

A

P

T

2.6 (T

a

=25

°

C)

W

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

–10

µ

A

V

CB

=–60V

I

EBO

–10

mA

V

EB

=–6V

V

CEO

–60

V

I

C

=–10mA

h

FE

2000

12000

V

CE

=–4V, I

C

=–3A

V

CE

(sat)

–1.5

V

V

BE

(sat)

–2.0

V

V

FEC

1.8

V

I

FEC

=1A

t

on

0.4

µ

s

V

CC

–30V,

t

stg

0.8

µ

s

I

C

=–3A,

t

f

0.6

µ

s

I

B1

=–I

B2

=–10mA

f

T

200

MHz

V

CE

=–12V, I

E

=0.2A

C

ob

75

pF

V

CB

=–10V, f=1MHz

Specification

min

typ

max

I

C

=–3A, I

B

=–6mA

R

1

: 2k

Ω 

typ  R

2

: 150

Ω 

typ    *Pins 5, 6, 11, 12 : NC

2

15,16

1

R

1

R

2

4

13,14

3

8

9,10

7

–6

–4

–2

0

0

–2

–4

–6

I

C

  (A)

V

CE

  (V)

I

B

=

2.2mA

–1.8m

A

–1.5mA

–1.2mA

–1.0mA

–0.9mA

–0.8mA

–0.03

(V

CE

=–4V)

h

FE

I

C

  (A)

10000

5000

1000

500

100

50

–0.05 –0.1

–0.5

–1

–5 –6

typ

–0.03

(V

CE

=–4V)

h

FE

I

C

  (A)

10000

5000

1000

500

100

50

–0.05 –0.1

–0.5

–1

–5 –6

T

a

=125

°

C

–30

°

C

75

°

C

25

°

C

–3

–0.5

(I

C

 / I

B

=1000)

V

CE

  (sat)  (V)

I

C

  (A)

–2

–1

0

–1

–5 –6

125

°

C

25

°

C

75

°

C

T

a

=–30

°

C

–3

–0.3

V

CE

  (sat) (V)

I

B

  (mA)

–2

–1

0

–0.5

–1

–5

–10

–50 –100 –200

I

C

=–4A

I

C

=–2A

I

C

=–1A

–6

0

0

 

I

C

  (A)

V

BE

  (V)

–5

–4

–3

–2

–1

–1

–2

–3

30

°

C

(V

CE

=–4V)

75

°

C

25

°

C

T

a

=125

°

C

20

10

5

1

0.5

1

5

10

50

100

500

1000

θ

j–

a

  (

°

C / W)

PW  (mS)

3

2

3

2

1

1

0

0

50

100

150

P

T

  (W)

Ta  (

°

C)

1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation

–10

–3

I

C

  (A)

–5

–1

–0.5

–0.1

–0.05

–0.03

–5

–10

–50

–100

Single Pulse
Without Heatsink
T

a

=25

°

C

1m

s

10m

s

V

CE

  (V)

PNP Darlington

3-phase motor drive

External dimensions

E

 • • • 

SD

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

193

SDC01

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

80

V

V

CEO

50

V

V

EBO

6

V

I

C

2

A

I

CP

3 (PW

1ms, D

u

10%)

A

I

B

0.5

A

P

T

3 (T

a

=25

°

C)

W

T

j

150

°

C

T

stg

 –40 to +150

°

C

θ

j–a

 41.6

°

C/W

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=80V

I

CES

100

µ

A

V

CES

=50V

I

EBO

10

µ

A

V

EB

=6V

V

CEO

50

V

I

C

=10mA

h

FE

500

2000

V

CE

=4V, I

C

=0.5A

V

CE

(sat)

0.4

V

V

BE

(sat)

1.1

V

f

T

40

MHz

V

CE

=12V, I

E

=–0.1A

I

C

=0.5A, I

B

=5mA

Specification

min

typ

max

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

1

0

2

3

4

5

6

V

CE

  (V)

I

C

  (A)

I

B

=100mA

30m

A

1

0

m

A

5mA

3m

A

2mA

1mA

2000

1000

500

100

50

0.01

0.1

1

3

I

C

  (A)

(V

CE

=4V)

h

FE

2000

1000

500

100

50

0.01

0.1

1

3

(V

CE

=4V)

h

FE

I

C

  (A)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

1.5

1.0

0.5

0

0.05

0.1

0.5

1

I

C

  (A)

V

CE

  (sat) (V)

(I

C

 / I

B

=500)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

(I

C

=0.5A)

1.5

1.0

0.5

0

0.5

1

10

100

V

CE

  (sat) (V)

I

B

  (mA)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0

0.5

1.0

1.5

V

BE

  (V)

(V

CE

=4V)

I

C

  (A)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

50

10

1

0.5

0.1

1

10

100

1000

θ

j–

a

  (

°

C / W)

PW  (mS)

3

2

1

0

0

4

3

2

1

50

100

150

1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation

P

T

  (W)

Ta  (

°

C)

5

1

0.1

0.05

100

10

1

V

CE

  (V)

I

C

  (A)

Single Pulse
Without Heatsink
T

a

=25

°

C

100

µ

s

1ms

10ms

9,10

11,12

13,14

15,16

8

6

4

2

1

3

5

7

NPN

General purpose

External dimensions

E

 • • • 

SD

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

194

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SDC03

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

60

±

10

V

V

CEO

60

±

10

V

V

EBO

6

V

I

C

1.5

A

I

CP

2.5 (PW

1ms, D

u

10%)

A

I

B

0.1

A

P

T

3 (T

a

=25

°

C)

W

T

j

150

°

C

T

stg

 –40 to +150

°

C

θ

j–a

 41.6

°

C/W

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=50V

I

EBO

1.1

3.5

mA

V

EB

=6V

V

CEO

50

60

70

V

I

C

=10mA

h

FE

2000

5000

12000

V

CE

=4V, I

C

=1A

V

CE

(sat)

1.2

1.4

V

V

BE

(sat)

1.8

2.2

V

V

FEC

1.3

1.8

V

I

FEC

=1A

t

on

0.5

µ

s

V

CC

30V,

t

stg

4.0

µ

s

I

C

=1A,

t

f

1.0

µ

s

I

B1

=–I

B2

=2mA

f

T

50

MHz

V

CE

=12V, I

E

=–0.1A

C

ob

25

pF

V

CB

=10V, f=1MHz

I

C

=1A, I

B

=2mA

Specification

min

typ

max

2.5

2.0

1.5

1.0

0.5

0

0

1

2

3

4

5

6

I

C

  (A)

V

CE

  (V)

I

B

=10mA

2mA

1m

A

0.6mA

0.4m

A

0.3mA

(V

CE

=4V)

10000

5000

1000

500

100

50

0.03 0.05

0.1

0.5

1

2.5

h

FE

I

C

  (A)

typ

10000

5000

1000

500

100

50

0.03 0.05

0.1

0.5

1

2.5

h

FE

I

C

  (A)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

(I

C

 / I

B

=1000)

3

2

1

0

0.2

0.5

1

2.5

V

CE

  (sat) (V)

I

C

  (A)

Ta=125

°

C

75

°

C

25

°

C

–30

°

C

3

2

1

0

0.1

0.5

1

5

10

50

100

I

B

  (mA)

V

CE

  (sat) (A)

I

C

=2A

1A

0.5A

2.5

2.0

1.5

1.0

0.5

0

0

1

2

3

I

C

  (A)

V

BE

  (V)

(V

CE

=4V)

T

a

=

1

2

5

°

C

7

5

°

C

25

°

C

30

°

C

50

10

5

1

1000

500

100

50

10

5

1

θ

j–

a

  (

°

C / W)

PW  (mS)

3

2

1

0

0

4

3

2

1

50

100

150

1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation

P

T

  (W)

Ta  (

°

C)

5

1

0.5

0.1

0.05

3

5

10

50

100

V

CE

  (V)

I

C

  (A)

100

µ

S

1

m

S

10m

S

Single Pulse
Without Heatsink
T

a

=25

°

C

2

R

1

R

2

15,16

1

4

13,14

3

6

11,12

5

8

9,10

7

NPN Darlington

With built-in avalanche diode

R

1

: 3.5k

Ω 

typ  R

2

: 200

Ω 

typ

External dimensions

E

 • • • 

SD

Absolute maximum ratings

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

195

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SDC04

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

100

±

15

V

V

CEO

100

±

15

V

V

EBO

6

V

I

C

1.5

A

I

CP

2.5 (PW

1ms, D

u

10%)

A

I

B

0.1

A

P

T

3 (T

a

=25

°

C)

W

T

j

150

°

C

T

stg

 –40 to +150

°

C

θ

j–a

 41.6

°

C/W

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=85V

I

EBO

1

3

mA

V

EB

=6V

V

CEO

85

100

115

V

I

C

=10mA

h

FE

2000

5000

12000

V

CE

=4V, I

C

=1A

V

CE

(sat)

1.0

1.3

V

V

BE

(sat)

1.7

2.2

V

V

FEC

1.2

1.8

V

I

FEC

=1A

t

on

0.6

µ

s

V

CC

30V,

t

stg

3.0

µ

s

I

C

=1A,

t

f

1.0

µ

s

I

B1

=–I

B2

=2mA

f

T

30

MHz

V

CE

=12V, I

E

=–0.1A

C

ob

20

pF

V

CB

=10V, f=1MHz

I

C

=1A, I

B

=2mA

Specification

min

typ

max

2.5

2.0

1.5

1.0

0.5

0

0

1

2

3

4

5

6

I

C

  (A)

V

CE

  (V)

I

B

=5mA

1mA

0.5m

A

0.3mA

0.2mA

20000

10000

5000

1000

500

100

50

0.03

0.05

0.1

0.5

1

2.5

(V

CE

=4V)

typ

h

FE

I

C

  (A)

20000

10000

5000

1000

500

100

50

0.03 0.05

0.1

0.5

1

2.5

h

FE

I

C

  (A)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

2

1

0

0.3

0.5

1

2.5

V

CE

  (sat) (V)

I

C

  (A)

(I

C

 / I

B

=1000)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

3

2

1

0

0.1

0.5

1

5

10

50

100

V

CE

  (sat) (V)

I

B

  (mA)

I

C

=4A

I

C

=2A

I

C

-1A

2.5

2.0

1.5

1.0

0.5

0

0

1

2

3

V

BE

  (V)

(V

CE

=4V)

I

C

  (A)

T

a

=

1

2

5

°

C

75

°

C

2

5

°

C

30

°

C

50

10

5

1

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

3

2

1

0

0

4

3

2

1

50

100

150

1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation

P

T

  (W)

Ta  (

°

C)

5

1

0.5

0.1

0.05

0.03

3

5

10

50

100

I

C

  (A)

V

CE

  (V)

Single Pulse
Without Heatsink
T

a

=25

°

C

100

µ

s

1m

s

10m

s

2

R

1

R

2

15,16

1

4

13,14

3

6

11,12

5

8

9,10

7

R

1

: 4k

Ω 

typ  R

2

: 150

Ω 

typ

NPN Darlington

With built-in avalanche diode

External dimensions

E

 • • • 

SD

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

196

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SDC06

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

30 to 45

V

V

CEO

30 to 45

V

V

EBO

6

V

I

C

2

A

I

CP

3 (PW

1ms, D

u

10%)

A

I

B

30

mA

P

T

3 (T

a

=25

°

C)

W

T

j

150

°

C

T

stg

 –40 to +150

°

C

θ

j–a

 41.6

°

C/W

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=30V

I

EBO

1.2

2.8

mA

V

EB

=6V

V

CEO

30

45

V

I

C

=10mA

h

FE

400

700

2000

V

CE

=4V, I

C

=0.5A

V

CE

(sat)

0.2

V

I

C

=0.5A, I

B

=5mA

0.6

V

I

C

=1A, I

B

=5mA

V

FEC

2.0

V

I

FEC

=1A

t

on

1.2

µ

s

V

CC

10V,

t

stg

18.0

µ

s

I

C

=0.5A,

t

f

3.6

µ

s

I

B1

=5mA, I

B2

=0A

f

T

20

MHz

V

CE

=12V, I

E

=–0.2A

C

ob

50

pF

V

CB

=10V, f=1MHz

E

S/B

40

mJ

L=10mH, Single pulse

Specification

min

typ

max

R

B

: 800

 typ    R

BE

: 2k

 typ

3

2

1

0

0

1

2

3

4

5

6

I

C

  (A)

V

CE

  (V)

I

B

=30mA

1mA

2mA

3mA

5mA

8mA

12mA

1000

500

100

0.03 0.05

0.1

0.5

1

3

typ

(V

CE

=4V)

I

C

  (A)

h

FE

1000

500

100

0.03 0.05

0.1

0.5

1

3

I

C

  (A)

(V

CE

=4V)

h

FE

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

3

2

1

0

0.2

0.5

1

3

(I

C

 / I

B

=100)

V

CE

  (sat) (V)

I

C

  (A)

Ta=125

°

C

75

°

C

25

°

C

–30

°

C

1

0

1

5

10

30

I

B

  (mA)

V

CE

  (sat) (V)

I

C

=1A

I

C

=0.5A

3

2

1

0

0

4

3

2

1

50

100

150

1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation

P

T

  (W)

Ta  (

°

C)

5

1

0.5

0.1

5

10

50

I

C

  (A)

Single Pulse
Without Heatsink
T

a

=25

°

C

V

CE

(V)

1mS

50

10

5

1

1

5

10

50

100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

2

15,16

1

R

B

R

BE

4

13,14

3

R

B

R

BE

6

11,12

5

R

B

R

BE

8

9,10

7

R

B

R

BE

NPN

With built-in avalanche diode

Absolute maximum ratings

Electrical characteristics

External dimensions

E

 • • • 

SD

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

197

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SDC07

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

60

V

V

CEO

60

V

V

EBO

6

V

I

C

4

A

I

CP

6 (PW

1ms, D

u

50%)

A

I

B

0.5

A

P

T

2.6 (T

a

=25

°

C)

W

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=60V

I

EBO

10

mA

V

EB

=6V

V

CEO

60

V

I

C

=10mA

h

FE

2000

12000

V

CE

=4V, I

C

=3A

V

CE

(sat)

1.5

V

V

BE

(sat)

2.0

V

V

FEC

1.8

V

I

FEC

=1A

t

on

1.0

µ

s

V

CC

30V,

t

stg

4.0

µ

s

I

C

=3A,

t

f

1.5

µ

s

I

B1

=–I

B2

=10mA

f

T

75

MHz

V

CE

=12V, I

E

=–0.1A

C

ob

50

pF

V

CB

=10V, f=1MHz

Specification

min

typ

max

I

C

=3A, I

B

=6mA

R

1

: 3k

Ω 

typ  R

2

: 200

Ω 

typ     *Pins 5, 6, 11, 12 : NC

6

4

2

0

0

2

4

6

I

C

  (A)

V

CE

  (V)

I

B

=4.0mA

2.0mA

1.2mA

0.8mA

0.6mA

0.5mA

0.4mA

20000

0.03

(V

CE

=4V)

h

FE

I

C

  (A)

10000

5000

1000

500

100

50

0.05

0.1

0.5

1

5 6

Typ

20000

0.03

(V

CE

=4V)

h

FE

I

C

  (A)

10000

5000

1000

500

100

50

0.05

0.1

0.5

1

5 6

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

3

0.5

1

5

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

2

1

0

6

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

3

0.2

 

V

CE

  (sat) (V)

I

B

  (mA)

2

1

0

0.5

1

5

10

50

100 200

I

C

=4A

I

C

=1A

I

C

=2A

6

0

0

I

C

  (A)

V

BE

  (V)

5

4

3

2

1

1

2

3

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

3

2

3

2

1

1

0

0

50

100

150

P

T

  (W)

Ta  (

°

C)

1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation

10

3

 

I

C

  (A)

V

CE

  (V)

5

1

0.5

0.1

0.05

0.03

5

10

50

100

Single Pulse
Without Heatsink
T

a

=25

°

C

1m

s

10ms

2

R

1

R

2

15,16

1

4

13,14

3

8

9,10

7

NPN Darlington

3-phase motor drive

20

10

5

1

0.5

1

5

10

50 100

500 1000

θ

j–

a

  (

°

C / W)

PW  (mS)

Absolute maximum ratings

Electrical characteristics

Equivalent circuit diagram

External dimensions

E

 • • • 

SD

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

198

Characteristic curves

I

C

-V

CE

 Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

V

CE

(sat)-I

B

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

θ

j-a

-PW Characteristics

P

T

-T

a

 Characteristics

Safe Operating Area (SOA)

SDH02

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

CBO

120

V

V

CEO

100

V

V

EBO

6

V

I

C

1.5

A

I

CP

2.5 (PW

1ms, D

u

10%)

A

I

B

0.2

A

I

F

1.5

A

I

FSM

2.5 (PW

0.5ms, D

u

10%)

A

V

R

120

V

P

T

3 (T

a

=25

°

C)

W

T

j

150

°

C

T

stg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

I

CBO

10

µ

A

V

CB

=120V

I

EBO

3

mA

V

EB

=6V

V

CEO

100

V

I

C

=10mA

h

FE

2000

6000

12000

V

CE

=4V, I

C

=1A

V

CE

(sat)

1.1

1.3

V

V

BE

(sat)

1.7

2.2

V

t

on

0.5

µ

s

V

CC

30V,

t

stg

4.5

µ

s

I

C

=1A,

t

f

1.2

µ

s

I

B1

=–I

B2

=2mA

f

T

50

MHz

V

CE

=12V, I

E

=–0.1A

C

ob

20

pF

V

CB

=10V, f=1MHz

I

C

=1A, I

B

=2mA

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.6

V

I

F

=1A

I

R

10

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

Specification

min

typ

max

Specification

min

typ

max

2.5

2.0

1.5

1.0

0.5

0

1

2

3

4

5

6

V

CE

  (V)

I

C

  (A)

I

B

=10mA

2mA

4m

A

1.2

mA

0.6mA

0.4mA

0.3mA

10000

5000

1000

500

100

0.03 0.05

0.1

0.5

1

2.5

h

FE

(V

CE

=4V)

I

C

  (A)

typ

(V

CE

=4V)

10000

5000

1000

500

100

0.03 0.05

0.1

0.5

1

2.5

h

FE

I

C

  (A)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

3

2

1

0

0.2

0.5

1

2.5

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

Ta=125

°

C

75

°

C

25

°

C

–30

°

C

3

2

1

0

0.1

0.5

1

5

10

50

100

I

C

=2A

I

C

=1A

I

C

=0.5A

V

CE

  (sat) (V)

I

B

  (mA)

2.5

2.0

1.5

1.0

0.5

0

0

1

2

3

I

C

  (A)

V

BE

  (V)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

50

10

5

1

5

1

10

100

500 1000

50

θ

j–

a

  (

°

C / W)

PW  (mS)

3

2

1

0

0

4

3

2

1

50

100

150

P

T

  (W)

Ta  (

°

C) 

1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation

5

1

0.5

0.1

0.05

0.03

3

5

10

50

100

V

CE

  (V)

I

C

  (A)

Single Pulse
Without Heatsink
T

a

=25

°

C

100

µ

s

1m

s

10ms

2

16 15

R

1

R

2

1

4

14 13

3

6

12 11

5

8

10 9

7

NPN Darlington

With built-in flywheel diode

R

1

: 2.5k

Ω 

typ  R

2

: 200

Ω 

typ

External dimensions

E

 • • • 

SD

Absolute maximum ratings

Diode for flyback voltage absorption

Equivalent circuit diagram

Electrical characteristics

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

200

NPN

PNP

NPN

NPN

PNP

PNP

NPN

PNP

I

C

-V

CE

 Characteristics (Typical)

I

C

-V

BE 

Temperature Characteristics (Typical)

h

FE

-I

Characteristics (Typical)

h

FE

-I

Temperature Characteristics (Typical)

Characteristic curves

SDH03

(T

a

=25

°

C)

Symbol

Unit

V

CBO

100

–60

V

V

CEO

100

–60

V

V

EBO

6

–6

V

I

C

1.5

–1.5

A

I

CP

2.5 (PW

1ms, D

u

100%)

–2.5 (PW

1ms, D

u

10%)

A

I

B

0.1

–0.1

A

P

T

3 (T

a

=25

°

C)

W

T

j

150

°

C

T

stg

–40 to +150

°

C

θ

j–a

41.6

°

C/W

Ratings

NPN

PNP

2.5

2.0

1.5

1.0

0.5

0

1

2

3

4

5

6

V

CE

  (V)

I

C

  (A)

I

B

=10mA

2mA

4mA

1.2mA

0.6mA

0.4mA

0.3mA

2

6

15

16

11

12

13

3

7

4

8

14

9

10

1

5

R

3

R

1

R

2

R

4

10000

5000

1000

500

100

0.03 0.05

0.1

0.5

1

2.5

h

FE

(V

CE

=4V)

I

C

  (A)

typ

2.5

2.0

1.5

1.0

0.5

0

0

1

2

3

I

C

  (A)

V

BE

  (V)

(V

CE

=4V)

T

a

=125

°

C

75

°

C

25

°

C

30

°

C

–6

–5

–4

–3

–2

–1

0

0

–0.5

–2.5

–2.0

–1.5

–1.0

V

CE

  (V)

I

C

  (A)

I

B

=

5

m

A

–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.5mA

–0.4mA

–0.3mA

2

m

A

10000

(V

CE

=–4V)

5000

1000

500

100

50

30

–0.03

–0.05

–0.1

–0.5

–1

–2.5

I

C

  (A)

h

FE

Typ

–2.5

–2.0

–1.5

–1.0

–0.5

0

0

–1

–2

–3

V

BE

  (V)

I

C

  (A)

(V

CE

=–4V)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

PNP + NPN Darlington

H-bridge

R

3

: 4k

Ω 

typ

R

4

: 100

Ω 

typ

R

1

: 4k

Ω 

typ

R

2

: 200

Ω 

typ

(V

CE

=4V)

10000

5000

1000

500

100

0.03 0.05

0.1

0.5

1

2.5

h

FE

I

C

  (A)

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

10000

(V

CE

=–4V)

5000

1000

500

100

50

–0.03

–0.1

–0.5

–1

–2.5

I

C

  (A)

h

FE

–0.05

T

a

=125

°

C

75

°

C

25

°

C

–30

°

C

External dimensions

E

 • • • 

SD

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

201

NPN

PNP

NPN

PNP

NPN

PNP

V

CE

(sat)-I

Characteristics (Typical)

V

CE

(sat)-I

Temperature Characteristics (Typical)

Safe Operating Area (SOA)

Characteristic curves

SDH03

(T

a

=25

°

C)

NPN

PNP

Symbol

Specification

Unit

Conditions

Specification

Unit

Conditions

min

typ

max

min

typ

max

I

CBO

10

µ

A

V

CB

=100V

–10

µ

A

V

CB

=–60V

I

EBO

3

mA

V

EB

=6V

–3

mA

V

EB

=–6V

V

CEO

100

V

I

C

=10mA

–60

V

I

C

=–10mA

h

FE

2000

12000

V

CE

=4V, I

C

=1A

2000

12000

V

CE

=–4V, I

C

=–1A

V

CE

(sat)

1.3

V

I

C

=1A, I

B

=2mA

–1.4

V

I

C

=–1A, I

B

=–2mA

V

BE

(sat)

2.2

V

–2.2

V

3

2

1

0

0.1

0.5

1

5

10

50

100

I

C

=2A

I

C

=1A

I

C

=0.5A

V

CE

  (sat) (V)

I

B

  (mA)

50

10

5

1

5

1

10

100

500 1000

50

θ

j–

a

  (

°

C / W)

PW  (mS)

5

1

0.5

0.1

0.05

0.03

3

5

10

50

100

V

CE

  (V)

I

C

  (A)

Single Pulse
Without Heatsink
T

a

=25

°

C

10

0

µ

s

1ms

10ms

3

2

1

0

0

4

3

2

1

50

100

150

P

T

  (W)

Ta  (

°

C)

1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation

–3

–2

–1

0

–0.1

–0.5

–1

–5

–10

–50

V

CE

  (sat) (V)

I

B

  (mA)

I

C

=–2A

I

C

=–1A

I

C

=–0.5A

–5

–1

–0.5

–0.1

–0.05

–3

–5

–10

–50

–100

V

CE

  (V)

I

C

  (A)

1m

s

10

m

s

10

0

µ

s

Single Pulse
Without Heatsink
T

a

=25

°

C

50

10

5

1

1

5

10

50

100

500

1000

θ

j–

a

  (

°

C / W)

PW  (mS)

3

2

1

0

0.2

0.5

1

2.5

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

I

C

  (A)

Ta=125

°

C

75

°

C

25

°

C

–30

°

C

–3

–2

–1

0

I

C

  (A)

(I

C

 / I

B

=1000)

V

CE

  (sat) (V)

–0.2

–0.5

–1

–2.5

T

a

=–30

°

C

25

°

C

75

°

C

125

°

C

Electrical characteristics

P

T

-T

a

 Characteristics

θ

j-a

-PW Characteristics

NPN

PNP

Allegro_Power_Transistor_array_MOSFET_array-html.html
background image

202

Characteristic curves

SDK02

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

60

V

V

GSS

±

10

V

I

D

±

2

A

I

D(

pulse

)

±

3 (PW

100

µ

s, D

u

1%)

A

I

F

1.5

A

I

FSM

2.5 (PW

0.5ms, D

u

10%)

A

V

R

120

V

P

T

3 (Ta=25

°

C, 4-circuit operation)

W

Tch

150

°

C

Tstg

 –40 to +150

°

C

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

60

V

I

D

=250

µ

A, V

GS

=0V

I

GSS

±

500

nA

V

GS

=

±

10V

I

DSS

250

µ

A

V

DS

=60V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

1.2

S

V

DS

=10V, I

D

=1.0A

0.19

0.24

V

GS

=10V, I

D

=1.0A

0.25

0.30

V

GS

=4V, I

D

=1.0A

Ciss

400

pF

V

DS

=25V,

Coss

160

pF

f=1.0MHz,

Crss

35

pF

V

GS

=0V

V

SD

1.0

1.5

V

I

SD

=2A, V

GS

=0V

t

rr

150

ns

I

SD

=

±

100mA

Symbol

Unit

Conditions

V

R

120

V

I

R

=10

µ

A

V

F

1.6

V

I

F

=1A

I

R

100

µ

A

V

R

=120V

t

rr

100

ns

I

F

=

±

100mA

Specification

min

typ

max

Specification

min

typ

max

R

DS(ON)

1

16

2

15

3

14

4

13

5

12

6

11

7

10

8

9

N-channel

With built-in flywheel diode

External dimensions

E

 • • • 

SD

Absolute maximum ratings

Electrical characteristics

Diode for flyback voltage absorption

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
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203

Characteristic curves

SDK04

(T

a

=25

°

C)

Symbol

Ratings

Unit

V

DSS

100

V

V

GSS

±

20

V

I

D

±

2

A

I

D(

pulse

)

±

5 (PW

100

µ

s, D

u

1%)

A

E

AS

*

2.7

mJ

P

T

3 (Ta=25

°

C,  4-circuit operation)

W

Tch

150

°

C

Tstg

–40 to +150

°

C

* : V

DD

=25V, L=1mH, I

L

=2A, unclamped, R

G

=50

, see Fig. E on page 15.

(T

a

=25

°

C)

Symbol

Unit

Conditions

V

(BR)DSS

100

V

I

D

=100

µ

A, V

GS

=0V

I

GSS

±

100

nA

V

GS

=

±

20V

I

DSS

100

µ

A

V

DS

=100V, V

GS

=0V

V

TH

1.0

2.0

V

V

DS

=10V, I

D

=250

µ

A

Re

(

yfs

)

1.5

S

V

DS

=10V, I

D

=1.0A

0.60

0.80

V

GS

=10V, I

D

=1.0A

0.75

0.95

V

GS

=4V, I

D

=1.0A

Ciss

160

pF

V

DS

=25V,

Coss

40

pF

f=1.0MHz,

Crss

10

pF

V

GS

=0V

t

d

(

on

)

7

ns

I

D

=1A, V

DD

50V,

t

r

20

ns

R

L

=50

,

t

d

(

off

)

35

ns

V

GS

=10V,

t

f

30

ns

see Fig. 3 on page 16.

V

SD

1.0

1.5

V

I

SD

=2A, V

GS

=0V

t

rr

140

ns

I

SD

=

±

100mA

Specification

min

typ

max

R

DS(ON)

1

15,16

2

3

13,14

4

5

11,12

6

7

9,10

8

N-channel

General purpose

External dimensions

E

 • • • 

SD

Absolute maximum ratings

Equivalent circuit diagram

Allegro_Power_Transistor_array_MOSFET_array-html.html
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