ENABLE YOUR PROJECTS 

WITH UMS

GaN 

 

High Power Amplifiers

up to 50W in  

hermetic package

Build your own solution with UMS

www.ums-rf.com

Performance

High level of performance 

in short pulsed mode:

n

 50W in X-Band / 35% PAE

n

 30W in Ku Band / 25% PAE

RF ports matched to 50 ohms 

Technology

n

 0.25µm GaN on SiC

n

 Proprietary technology

n

 European source

n

  Hermetic package

n

  Internal assembly line:  

- Eutectic die attach 

- Micro-wire bondings 

- Package sealing and  

  leak testing

Design Know How

n

  Control interfaces for HPA 

fast switching times (<10ns)

n

  3D simulation for optimum 

integration 

n

  RF transitions optimized up 

to 18GHz

n

 Thermally optimized

Innovative product solutions

UMS 2017 - Printed on PEFC paper - Smith Corporate : 01 69 59 1

1 30 - www

.smithcorporate.fr

Parts description

Parts description

Contact us:

Worldwide distributor: 

Richardson RFPD

www.richardsonrfpd.com

UMS SAS – EMEA,

Ph: +33 1 69 86 32 00

mktsales@ums-rf.com

UMS USA, Inc. - America,

Ph: +1 781 791 5078

philippe.labasse@ums-rf.com

UMS - Asia, 

Ph: +86 21 6103 1703 

xavier.taltasse@ums-rf.com

www.ums-rf.com

Main Features  

for X Band HPA

n

 Psat: 47.5dBm @Pin=28dBm

n

 PAE: 35% @Pin=28dBm

n

 Power Gain: 19dB

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 Small Signal Gain: 27dB

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  Bias: Vd=30V, Idq=2.2A, Idsat=5A,  

Vg#-3.2V

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 Short Vg pulses thru control interfaces

Main Features  

for Ku Band HPA

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 Psat: 45dBm @Pin=33dBm

n

 PAE: 25% @Pin=33dBm

n

 Power Gain: 12dB

n

 Small Signal Gain: 20dB

n

  Bias: Vd=30V, Idq=2.2A, Idsat=4.5A, 

Vg#-3.2V

n

 Short Vg pulses thru control interfaces

Package thermal management performed on Cu-Mo-Cu base.
Ceramic-metal Flangeless package dimensions: 17.4 x 17.9 x 4.5 mm.