X-BAND AESA CHIPSET

GaN & GaAs 

solutions for 

Multipurpose 

Phased Array 

Radar

Field proven performance 

n

 High efficiency

n

 High accuracy (on module & phase)

n

  Single and multichip solutions

Reliable technologies 

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 European source

n

 Qualified package technology

n

 In-house technologies qualified for Space

Build your own solution with UMS

www.ums-rf.com

Defense

Air traffic

Satellites

UMS 2023/2024

 - Printed on PEFC paper - Smith Corporate : 01 69 59 1

1 30 - www

.smithcorporate.fr

Full chipset for T/R modules

Full chipset for T/R modules

Contact us:

Worldwide distributor: Richardson RFPD - www.richardsonrfpd.com

UMS SAS – EMEA,

Ph: +33 1 69 86 32 00

mktsales@ums-rf.com

UMS USA, Inc. - America,

Ph: +1 781 791 5078

philippe.labasse@ums-rf.com

UMS - Asia, 

Ph: +65 9298 8316

thomas.vacher@ums-rf.com

www.ums-rf.com

Part Number

Freq (GHz)

Gain (dB)

NF (dB)

P1dB (dBm)

Power supply

CHA1010-99F

7-11

32

1

5.5

30mA @ 5V

CHA2110-QDG (2)

7-12

19

1.2

10

45mA @ 4V

CHA2063a99F

7-13

19

2

8

40mA @ 4V

Part Number

Operating Frequency (GHz)

Glin (dB)@Freq (GHz)

Saturated Power (W)

PAE (%) @ Freq (GHz

Power supply

CHK9014-99F

Up to 13

13 @ 12

60

50 @ 12

0.7A @ 30V

CHK8015-99F

Up to 18

12 @ 15

20

50 @ 15

0.2A @ 30V

Part Number

Freq (GHz)

Gain (dB)

Psat (dBm)

PAE (%)

Power supply

CHA6105-99F

8-12

30

31.5

-

700mA @  8V

CHA5115-QDG (2)

8-12

24

29

30

190mA @ 8V

CHA6005-QEG (2)

8-12

19.5

32

35

420mA @ 8V

CHA5014-99F

8.5-11

20

30

-

230mA @ 8.5V

Part Number

Freq (GHz)

Loss (dB)

P-1dB IN(dBm)

Isolation (dB)

Control voltage

CHS7012-99F

DC-12

1.4

40.5

35

-25/0

CHS5100-99F

DC-20

2.1

20

30

-6/0

CHS8618-99F

6-18

1.3

42

34

-25/0

Part Number

Freq (GHz)

Gain (dB)

Psat (dBm)

PAE (%)

Power supply

CHA8054-99F

7.7-8.6

27

43.6

50 (@7dBc)

900mA @ 28V

CHA8612-QDB

7.9-11

26

42.5

40 (@ Psat)

680mA @ 30V

CHA6710-FAB

8-12.75

22.5

37

35 (@ Psat)

200mA @ 25V

CHA6710-99F

8-12.75

23.5

37.4

36 (@ Psat)

200mA @ 25V

CHA8710a99F

8.5-10.5

28.5

44

44 (@ Psat)

750mA @ 25V

CHA8610-99F

8.5-11

24

42

40 (@ Psat)

680mA @ 30V

CHA8611-99F

8.5-11

24

42.5

43 (@ Psat)

800mA @ 25V

CHA7114-99F

8.5-11.5

20

39.8

40 (@ 4dBc)

2A @ 8V

CHA7115-99F

8.5-11.5

27.5

39

37 (@ 4dBc)

2.2A @ 8V

CHA7215-99F

8.5-11.5

28

39.5

34 (@ 4dBc)

2.3A @ 8V

CHA8100-99F (1)

9-10.5

18

41

40 (@3dBc)

2.1A @ 9V

Part Number

Freq (GHz)

Gain Rx-Tx

(dB)

Rx NF

(dB)

Rx P1dB

(dBm)

Tx Psat

(dBm)

nb of bit

RMS phase

Error (°)

RMS Att

Error (°)

CHC3014-99F(*)(1)

8-12

13.5-25

5.8

16.5

20

6

2

0.3

Part Number

Freq (GHz)

Number 

of bits

Amplitude

Control (dB)

Insertion 

Loss (dB)

Att. Error

(dB)

P-1dB IN

(dBm)

Control 

Voltage (V)

CHT3029-QEG (1)(2)

DC-30

4

15

5

+/-0.5

20

0/3.3 or 5

CHT4016-QEG (1)(2)

4-14

6

31.5

7

+/-0.8

23

-5/0

Part Number

Freq (GHz)

Number 

of bits

Phase 

range (°)

Insertion 

Loss (dB)

Phase error 

(°p-p)

P-1dB IN

(dBm)

Control 

Voltage (V)

CHP3015-QDG (1)(2)

8.5-10.5

6

360

8

-2/+8

23.5

3.3 or 5

LOW NOISE AMPLIFIERS

GaN HEMT TRANSISTOR DIE

DRIVER AMPLIFIERS

REFLECTIVE SPDT SWITCHES

HIGH POWER AMPLIFIERS

CORE CHIP

ATTENUATORS

PHASE SHIFTERS

(*) A 6-bit phase shifter, a 6-bit attenuator, an additional 2-bit attenuator for tuning, buffer amplifiers and switches.

(1) Including TTL compatible interfaces  -  (2) Also available in bare die