GaN TECHNOLOGY

GH15 GaN process is optimized for applications up to 40GHz   

for high power, high PAE and high linearity. 
Supported by a thermally dissipative SiC substrate, the power density reaches 

4.2W/mm. This MMIC process includes MIM capacitors, inductors, air 

bridges, metallic resistors, via through the substrate and two metal layers for 

interconnections. 

GH15 is the ideal process  

to design:

•  High power and high PAE amplifiers 

up to 40GHz

• Robust LNA
• High Power switches

Build your own solution with UMS

www.ums-rf.com

0.15µm 

GaN HEMT 

process

>>>

Industrial technologies 

qualified for 

Space

UMS 2024/2025

 - Printed on PEFC paper - Smith Corporate : 01 69 59 1

1 30 - www

.smithcorporate.fr

Contact us:

Worldwide distributor: 
Richardson RFPD
www.richardsonrfpd.com

UMS SAS - EMEA

Ph: +33 1 69 86 32 00
mktsales@ums-rf.com

UMS USA Inc. - America

Ph: +1 781 791 5078
philippe.labasse@ums-rf.com

UMS - Asia 

Ph: +65 9298 8316 
thomas.vacher@ums-rf.com

www.ums-rf.com

Process Design Kits (PDK) will include non-linear electro-thermal models, noise model, diodes  

& switches models, passive models, all with associated library elements.

Applications targeted 

with GH15:

• Pt to Pt radio
• 5G
• Satcom
• Radar
• Broadband amplification
• Hi-Rel products

Element

Typical Value

Vt

-3,2 V

Power Density

4.2W/mm

Ids+

1.45 A/mm

Gm

405 mS/mm

VdsDC

Up to 25V

NF/Gass

1.5dB / 11dB  @ 15GHz

Fmax

> 100 GHz

MIM density

175 pF/mm

2 

(and 355 pF/mm

2

 for GH15-11)

Metallic resistors

30 and 1000 Ohms/sq

Max freq use

40GHz

Process main features

Proven reliability

GH15 is available in four technology versions:

• GH15-10, Space evaluated
•  GH15-11, providing additional options, such as High Density MIM 355pF/mm2 and BCB 

mechanical protection for compatibility with plastic molded packaging.

• GH15-12, providing mechanical and humidity protection
• GH15-13, with thinner substrate specially optimized for Q-band applications