2SA2097(TE16L1,NQ) Toshiba PNP Bipolar Transistor 5A 50V 3-Pin DPAK

2SA2097(TE16L1,NQ) Toshiba Power transistor for high-speed switching applications GP BJT PNP 50V 5A 3-Pin(2+Tab) New PW-Mold RoHS

SKU: 2SA2097(TE16L1,NQ) Categories: , , Tag: Brand:

Description

2SA2097(TE16L1,NQ) Toshiba Transistor GP BJT PNP 50V 5A 3-Pin(2+Tab) New PW-Mold RoHS

Feature High hFE
Application Scope High current switching
Polarity PNP
Complementary Product 2SC5886
RoHS Compatible Product(s) (#) Available
Assembly bases Japan
Package Information

Toshiba Package Name New PW-Mold
Package Image New PW-Mold
Pins 3
Mounting Surface Mount
WidthLengthHeight
(mm) 6.59.52.3
Specifications

Transistor Type PNP
Maximum DC Collector Current 5 A
Maximum Collector Emitter Voltage 50 V
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Maximum Power Dissipation 20 W
Minimum DC Current Gain 100
Transistor Configuration Single
Maximum Collector Base Voltage -50 V
Maximum Emitter Base Voltage -7 V
Pin Count 3
Number of Elements per Chip 1
Length 6.5mm
Dimensions 6.5 x 5.5 x 2.3mm
Width 5.5mm
Maximum Base Emitter Saturation Voltage -1.1 V
Maximum Operating Temperature 150C
Height 2.3mm
Maximum Collector Emitter Saturation Voltage -0.27 V
Manufacturer:Toshiba
Datasheet:Toshiba/2SA2097.pdf

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