Description
Toshiba 2SC2713-GR-TE85L-F Bipolar Transistors – BJT GP BJT NPN 120V 0.1A 3-Pin TO-236 RoHS
Technical Attributes
Channel Type N
Lead Finish Tin-Silver-Copper
Max Processing Temp 260
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 0.3 1mA 10mA V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Power Dissipation 150 mW
Minimum DC Current Gain 200 2mA 6V
Mounting Surface Mount
Operating Temperature -55 to 125 C
Pin Count 3
Product Dimensions 2.9 x 1.5 x 1.1 mm
Supplier Package S-Mini
Type NPN
Manufacturer:Toshiba
Datasheet:Toshiba/TOSCS51228-1.pdf
