Description
2SK3683-01MRSC-P Fuji Electric Fuji Power MOSFET SuperFAP-G series Target Specification / Trans MOSFET N-CH Si 500V 19A 3-Pin(3+Tab) TO-220F RoHS
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
Type Designator: 2SK3683-01MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 97 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 19 A
Maximum Junction Temperature (Tj): 150C
Total Gate Charge (Qg): 34 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 230 pF
Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm
Package: TO220F
Manufacturer:Renesas
Datasheet:2SK3683.pdf
