Description
55GN01CA-TB-E ON Semiconductor RF Bipolar Transistor RF BJT NPN 10V 0.07A 200mW 3-Pin SC-59 T/R RoHS
Specifications
Manufacturer: onsemi
Product Category: RF Bipolar Transistors
Series: 55GN01CA
Transistor Type: Bipolar Power
Technology: Si
Transistor Polarity: NPN
Operating Frequency: 5.5 GHz
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 10 V
Emitter- Base Voltage VEBO: 3 V
Continuous Collector Current: 5 mA
Minimum Operating Temperature: + 25 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Mounting Style: SMD/SMT
Package / Case: CP-3
Packaging: Cut Tape
Packaging: Reel
Collector- Base Voltage VCBO: 20 V
DC Current Gain hFE Max: 180
Height: 1.1 mm
Length: 2.9 mm
Operating Temperature Range: + 25 C to + 150 C
Type: RF Bipolar Power
Width: 1.5 mm
Brand: onsemi
Gain Bandwidth Product fT: 4.5 GHz
Maximum DC Collector Current: 70 mA
Pd – Power Dissipation: 200 mW
Product Type: RF Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 0.000416 oz
Manufacturer: ON Semiconductor
MFG Part #: 55GN01CA-TB-E
