Description
BC80725E6327 Infineon General Purpose PNP BJT Transistor 45V 0.5A 0.33W SMT / SMD 3-Pin SOT-23
For general AF applications High collector current High current gain Low collector-emitter saturation voltage Comlementary types: BC817, BC818 (NPN)
Specifications
Dimensions 1 x 2.9 x 1.3mm
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 200 MHz
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 0.33 W
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1
Package Type SOT-23
Pin Count 3
Width 1.3mm
Maximum Base Emitter Saturation Voltage 1.2 V
Maximum Collector Emitter Saturation Voltage 0.7 V
Minimum DC Current Gain 40
Transistor Type PNP
Height 1mm
Length 2.9mm
Mounting Type Surface Mount
Manufacturer:Infineon Technologies
Datasheet:Infineon/BC807-25E6327.pdf
