Description
BD439G ON Semiconductor Bipolar Transistors 4A 60V 36W NPN BJT NPN 60V 4A 3MHz 36 W Through Hole TO-225AA RoHS
Specifications
Manufacturer: ON Semiconductor
Product Category: Bipolar Transistors – BJT
Mounting Style: Through Hole
Package / Case: TO-225-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 60 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.8 V
Maximum DC Collector Current: 4 A
Pd – Power Dissipation: 36 W
Gain Bandwidth Product fT: 3 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: BD439
Packaging: Bulk
Height: 11.04 mm
Length: 7.74 mm
Technology: Si
Width: 2.66 mm
Brand: ON Semiconductor
Continuous Collector Current: 4 A
DC Collector/Base Gain hfe Min: 20
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 500
Subcategory: Transistors
Unit Weight: 0.068784 oz
Manufacturer: ON Semiconductor
MFG Part #: BD439G
