Description
BFX85 TT Electronics / Semelab Transistor GP BJT NPN 60V 1A 800mW 3-Pin TO-39
Small signal transistor with silicon planar construction.
NPN polarity
Collector emitter breakdown voltage 60V
Collector base breakdown voltage 100V
Collector current 1A
Power 0.8W
70 DC current gain
Transition frequency 50MHz
TO-39 case
Weight 1.08g
Specifications
Transistor Type NPN
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 60 V
Package Type TO-39
Mounting Type Through Hole
Maximum Power Dissipation 5 W
Minimum DC Current Gain 15
Maximum Collector Base Voltage 100 V
Maximum Operating Frequency 185 MHz
Pin Count 3
Number of Elements per Chip 1
Maximum Base Emitter Saturation Voltage 2 V
Diameter 9.4mm
Maximum Operating Temperature +175 °C
Height 6.6mm
Maximum Collector Emitter Saturation Voltage 1.6 V
Dimensions 9.4 (Dia.) x 6.6mm
Manufacturer Part Number: BFX85
