Description
BSC010NE2LSATMA1 Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS N-CH 25V 39A 8-Pin TDSON EP T/R RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 25 V
Id – Continuous Drain Current: 100 A
Rds On – Drain-Source Resistance: 800 uOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1.2 V
Qg – Gate Charge: 85 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 96 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Height: 1.27 mm
Length: 5.9 mm
Transistor Type: 1 N-Channel
Width: 5.15 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 85 S
Fall Time: 4.4 ns
Product Type: MOSFET
Rise Time: 6 ns
Factory Pack Quantity: 5000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 34 ns
Typical Turn-On Delay Time: 6.7 ns
Part # Aliases: BSC010NE2LS SP000776124
Unit Weight: 0.003880 oz
Manufacturer: Infineon Technologies
MFG Part #: BSC010NE2LSATMA1
