Description
BSC028N06NSATMA1 Infineon Technologies MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 100 A
Rds On – Drain-Source Resistance: 2.5 mOhms
Vgs th – Gate-Source Threshold Voltage: 2.1 V
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 49 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 83 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Height: 1.27 mm
Length: 5.9 mm
Product: OptiMOS Power
Series: OptiMOS 5
Transistor Type: 1 N-Channel
Type: OptiMOS Power Transistor
Width: 5.15 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 50 S
Fall Time: 8 ns
Product Type: MOSFET
Rise Time: 38 ns
Factory Pack Quantity: 5000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 11 ns
Part # Aliases: BSC028N06NS BSC28N6NSXT SP000917416
Manufacturer Part Number: BSC028N06NSATMA1
Infineon Technologies
