Description
BSC190N15NS3G Infineon Technologies OptiMOS 3 Power MOSFET N-Channel 150 V 50A 125W Surface Mount PG-TDSON-8-1 RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 150 V
Id – Continuous Drain Current: 50 A
Rds On – Drain-Source Resistance: 16 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 31 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 125 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Reel
Packaging: Cut Tape
Brand: Infineon Technologies
Configuration: Single
Fall Time: 6 ns
Forward Transconductance – Min: 29 S
Height: 1.27 mm
Length: 5.9 mm
Product Type: MOSFET
Rise Time: 53 ns
Series: OptiMOS 3
Reel Quantity:5000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: OptiMOS 3 Power-Transistor
Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 15 ns
Width: 5.15 mm
Part # Aliases: SP000416636 BSC19N15NS3GXT BSC190N15NS3GATMA1
Unit Weight: 0.003527 oz
Manufacturer: Infineon Technologies
MFG Part #: BSC190N15NS3G
