Description
BSO201SPHXUMA1 Infineon Technologies MOSFET P-Channel 20V 12A (Ta) 1.6W (Ta) Surface Mount PG-DSO-8
Infineon highly innovative OptiMOS
families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Specifications
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds – Drain-Source Breakdown Voltage: 20 V
Id – Continuous Drain Current: 14.9 A
Rds On – Drain-Source Resistance: 6.7 mOhms
Vgs th – Gate-Source Threshold Voltage: 1.2 V
Vgs – Gate-Source Voltage: 12 V
Qg – Gate Charge: – 88 nC
Minimum Operating Temperature: – 55C 150C
Pd – Power Dissipation: 2.5 W
Configuration: Single
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Height: 1.75 mm
Length: 4.9 mm
Series: BSO201
Transistor Type: 1 P-Channel
Width: 3.9 mm
Brand: Infineon Technologies
Moisture Sensitive: Yes
Product Type: MOSFET
Rise Time: 99 ns
Factory Pack Quantity: 2500
Typical Turn-Off Delay Time: 99 ns
Typical Turn-On Delay Time: 21 ns
Part # Aliases: BSO201SP BSO21SPHXT H SP000613828
Unit Weight: 0.019048 oz
Compared to traditional transistors, BSO201SPHXUMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1600 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
Manufacturer Part Number: BSO201SPHXUMA1
Infineon Technologies
